Topic: MOSIS_2UMSPICE

 [ ATTENTION  ALL MOSIS LIAISONS AND USERS:
 Effective October 1, 1989 the CIF-CHECKSUM parameter must be provided
 to MOSIS before designs will be put into the fabrication queue.  This
 change is being made to protect the data integrity of your design files.
 Please see information TOPIC: CHKSUM for more information. ]


                     CMOS 2um WORST CASE SPICE PARAMETERS

The  worst  case  parameters  are  based  upon  our  published process targets,
however, the parameters were not generated using the optimizer.  No  MOSIS  run
has  ever  reached  worst case limits.  We have no physical devices that can be
measured to refine the worst case parameters.  When (or if) such devices become
available, we will optimize the worst case parameter set.

The following SPICE level=2 parameters define the minimum drain current
case for the MOSIS 2um runs.
*
* Slow corner model.
*
* N_Channel Transisor
*
.MODEL CMOSN NMOS LEVEL=2 LD=0.25U TOX=450E-10
+NSUB=3.0E+16 VTO=1.0 UO=600 UEXP=.13 UCRIT=0.7E5
+DELTA=1.5 VMAX=5.0E4 XJ=0.2U NEFF=3.0
+RSH=40 CGDO=3.0E-10 CGSO=3.0E-10 
+CJ=3.07E-04 MJ=0.65 CJSW=5.4E-10 MJSW=0.3 PB=0.7
*
* P_Channel Transistor
*
.MODEL CMOSP PMOS LEVEL=2 LD=0.25U TOX=450E-10       
+NSUB=7.0E+15 VTO=-1.0 UO=220 UEXP=0.35 UCRIT=0.9E5
+DELTA=1.0 VMAX=3.0E4 XJ=0.1U NEFF=1.5
+RSH=150 CGDO=3.0E-10 CGSO=3.0E-10 
+CJ=3.5E-04 MJ=0.5 CJSW=5.0E-10 MJSW=0.3 PB=0.7 



The following SPICE level=2 parameters define the maximum drain current
case for the MOSIS 2um runs.
*
*
* Fast corner model.
*
* N_Channel Transistor
*
.MODEL CMOSN NMOS LEVEL=2 LD=0.25U TOX=350E-10
+NSUB=7.0E+15 VTO=0.6 UO=700 UEXP=.13 UCRIT=0.7E5
+DELTA=1.5 VMAX=5.0E4 XJ=0.2U NEFF=3.0
+RSH=28 CGDO=1.5E-10 CGSO=1.5E-10 
+CJ=1.75E-04 MJ=0.65 CJSW=4.0E-10 MJSW=0.3 PB=0.7
*
* P_Channel Transistor
*
.MODEL CMOSP PMOS LEVEL=2 LD=0.25U TOX=350E-10       
+NSUB=5.0E+15 VTO=-0.6 UO=270 UEXP=0.35 UCRIT=0.9E5
+DELTA=1.0 VMAX=3.0E4 XJ=0.1U NEFF=1.5
+RSH=92 CGDO=1.3E-10 CGSO=1.3E-10 
+CJ=2.25E-04 MJ=0.5 CJSW=3.0E-10 MJSW=0.3 PB=0.7 
*