[MOSIS-BBOARD] To send mail to this file, use the net-address MOSIS-BBOARD@MOSIS.EDU -- Message from file: MOSIS_DATA:[UMOSIS.CC.MOSIS-BBOARD]MAIL.TXT.1 -- Wednesday, May 3, 1989 01:06:18-PDT N 40 1-May XMOSIS@Cheeta.I NEW MOSIS DOCUMENTS (2834 chars) N 39 15-Apr XMOSIS@Cheeta.I GaAs IC design teacher's course (3326 chars) N 38 1-Apr XMOSIS@Cheeta.I ELECTRODE DESIGN RULES (1657 chars) N 37 31-Mar XMOSIS@cheeta.i NEW MOSIS DOCUMENTS (3989 chars) N 36 30-Mar XMOSIS@cheeta.i CHANGE IN 3 MICRON RUN SCHEDULING (11770 chars) N 35 28-Mar XMOSIS@Cheeta.I CHANGE IN 3 MICRON RUN SCHEDULING (10236 chars) N 34 9-Mar XMOSIS@Cheeta.I New VTI Metallization (1261 chars) N 33 28-Feb XMOSIS@Cheeta.I NEW MOSIS DOCUMENTS (1849 chars) N 32 4-Feb XMOSIS@cheeta.i NEW MOSIS DOCUMENTS (2185 chars) N 31 3-Feb XMOSIS@cheeta.i Laser Direct Write Deposition and (2785 chars) N 30 15-Jan XMOSIS@cheeta.i SECOND POLY DESIGN RULE REVISIONS (25986 chars) N 29 11-Jan XMOSIS@cheeta.i NEW MOSIS DOCUMENTS (1959 chars) N 28 6-Jan XMOSIS@cheeta.i THREE MICRON RUN DELAYED (1592 chars) N 27 15-Dec XMOSIS@cheeta.i CHANGE IN SUBSTRATE POLICY (1687 chars) N 26 9-Dec MOSIS AGENT NEW PRICE SCHEDULES (11839 chars) N 25 8-Dec MOSIS AGENT NEW FABRICATION SCHEDULE (8570 chars) N 24 7-Dec XMOSIS@CHEETA.I NEW MOSIS DOCUMENTS (2078 chars) N 23 23-Nov MOSIS AGENT MOSIS 1.6 AND 1.2 MICRON RUNS (4279 chars) N 22 22-Nov MOSIS AGENT NEW MOSIS DOCUMENTS (2675 chars) N 21 12-Nov MOSIS AGENT MOSIS SECOND-POLY INFORMATION (22486 chars) 20 1-Nov MOSIS AGENT NSF ANNOUNCEMENT (1443 chars) 19 27-Oct MOSIS AGENT MOSIS ANNOUNCEMENTS (1535 chars) 18 24-Oct MOSIS AGENT MOSIS ANNOUNCEMENTS (1533 chars) 17 22-Oct MOSIS AGENT MOSIS ANNOUNCEES DOUBLE POLY RUNS (3105 chars) 16 6-Sep Gershon Kedem VPNR: Standard Cells placement an (2557 chars) 15 22-Jul MOSIS AGENT NEW MOSIS PRICES (10343 chars) 14 20-Jul MOSIS AGENT MOSIS DOUBLE POLY RUNS (3668 chars) 13 9-Jul MOSIS AGENT MOSIS 2 MICRON CMOS NWELL RUNS (3887 chars) 12 23-Jun Paul Losleben VLSI Education Conference & Expos (1960 chars) 11 16-Jun MOSIS AGENT MOSIS for Advanced Classes (4994 chars) 10 28-May MOSIS AGENT 2 Micron TinyChips (1531 chars) 9 21-May MOSIS AGENT MOSIS CLASS ACCOUNTS (2047 chars) 8 5-May MOSIS AGENT NEW MOSIS SCHEDULE (673 chars) 7 26-Apr MOSIS AGENT NEW MOSIS PARAMETER - QUANTITY:n (2547 chars) 6 22-Apr Kevin Karplus Query about transistor density on (1506 chars) 5 30-Mar To: MOSIS_LIAIS Information Update (1249 chars) 4 25-Mar MOSIS AGENT Standard Cell Library and Scalabl (2215 chars) 3 12-Mar MOSIS AGENT MOSIS SUPPORT FOR ADVANCED EDUCAT (2596 chars) 2 10-Mar delatorr@vlsi-c Recent attention messages (5447 chars) 1 11-Feb DELATORRE@Cheet Recent Announcement messages (3545 chars) Message 40 -- ************************ 1-May-89 11:08:48-PDT,2834;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Mon, 1 May 89 11:08:06 PDT Posted-Date: 1-MAY-1989 10:42:13 Message-Id: <8905011801.AA00388@vlsif.isi.edu> Received: from cheeta.isi.edu by vlsif.isi.edu (5.61/5.61) id AA00388; Mon, 1 May 89 11:01:23 -0700 Date: 1-MAY-1989 10:42:13 From: XMOSIS@Cheeta.ISI.Edu Subject: NEW MOSIS DOCUMENTS Reply-To: vlsi.attn@a.isi.edu Monday, May 1, 1989 Files created in the past 30 days: ANNOUNCEMENTS.INF 195343 19-Apr-89 3:20:55 CHAPT1.DOC 6114 14-Apr-89 9:57:29 CHAPT11.DOC 3658 24-Apr-89 10:24:11 CHAPT2.DOC 6540 14-Apr-89 10:00:19 CHAPT3.DOC 12076 14-Apr-89 10:10:11 CHAPT4.DOC 14076 14-Apr-89 11:04:37 CHAPT5.DOC 13206 14-Apr-89 11:08:10 CHAPT6.DOC 14798 18-Apr-89 12:39:35 CHAPT7.DOC 12274 18-Apr-89 12:43:30 CHAPT8.DOC 8350 18-Apr-89 12:46:01 CHAPT9.DOC 29324 18-Apr-89 14:22:53 CHIP_SZES_QUANTS.INF 2774 5-Apr-89 14:28:42 CMOSBK.INF 12746 11-Apr-89 11:46:38 CMOSN.TECH 53746 12-Apr-89 11:34:06 FUSION.INF 3128 11-Apr-89 16:02:39 GDSII_CIF.INF 13190 3-Apr-89 9:34:20 GETTING_STARTED.INF 6540 20-Apr-89 14:56:16 LIBINF.DOC 17128 3-Apr-89 17:19:59 M8CC.PRM 7736 6-Apr-89 18:13:41 M92M.STS 826 3-Apr-89 11:14:27 M92N.STS 790 19-Apr-89 11:40:14 M92O.STS 822 19-Apr-89 11:51:23 M92P.PRM 7828 5-Apr-89 7:25:38 M92P.STS 858 10-Apr-89 13:05:40 M92Q.PRM 7820 13-Apr-89 8:14:41 M92Q.STS 856 19-Apr-89 12:08:42 M93S.STS 856 14-Apr-89 14:51:14 M93T.STS 872 26-Apr-89 16:22:26 M93U.STS 878 27-Apr-89 7:59:32 M94V.STS 856 13-Apr-89 13:29:58 M94W.STS 876 21-Apr-89 8:19:19 M94X.STS 852 24-Apr-89 9:01:04 M94Y.STS 892 26-Apr-89 16:35:29 MAGIC.INF 1250 18-Apr-89 15:48:25 MINFO.OLD 84752 11-Apr-89 15:58:43 MOSIS_PACKAGING.INF 2351 19-Apr-89 10:26:03 PACK_BOND.INF 28060 27-Apr-89 12:31:27 PRICE_SCHED.INF 11576 1-May-89 9:04:16 PROCESS_MONITOR.INF 3980 12-Apr-89 11:11:13 SCMOS.TECH 86038 17-Apr-89 8:33:17 SCN20_VTI_SPECS.INF 5742 20-Apr-89 17:11:53 SCRULES_ELEC_COVER.CIF 5580 24-Apr-89 17:15:10 SPECIAL_REQUESTS.INF 3130 11-Apr-89 15:50:01 TOPICS.INF 7074 19-Apr-89 11:16:50 VLSICAD_TOOLS.INF 8444 3-Apr-89 16:10:28 [] Message 39 -- ************************ 15-Apr-89 00:40:11-PDT,3326;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Sat, 15 Apr 89 00:37:48 PDT Posted-Date: 15-APR-1989 00:10:03 Message-Id: <8904150733.AA18569@vlsif.isi.edu> Received: from cheeta.isi.edu by vlsif.isi.edu (5.61/5.51) id AA18569; Sat, 15 Apr 89 00:33:41 -0700 Date: 15-APR-1989 00:10:03 From: XMOSIS@Cheeta.ISI.Edu Subject: GaAs IC design teacher's course Reply-To: vlsi.attn@a.isi.edu University of California, Santa Barbara Monday, 7/24/89 through Wed. 8/2/89 A DARPA sponsored GaAs IC design course will be held at UCSB. The purpose of the course is to provide an intensive introduction to the design of GaAs digital ICs using the foundry services which will be made available through MOSIS/ISI. Those who presently teach or are planning to teach GaAs IC courses are the intended audience, however, GaAs IC users are also welcome. No prior experience with GaAs devices or circuits is required, however NMOS or CMOS IC design experience will be needed due to the fast pace of the course. The attendance will be limited to a maximum enrollment of 40 with priority given to instructors. The main instructors for the course will be Prof. Stephen Long (UCSB) and Dr. John Johnson (UCSB). A brief introduction to the sem-custom design tools developed for gate arrays and standard cells at Mayo Foundation and Univ. of Utah may also be given by Dr. Barry Gilbert and Prof. Kent Smith. The course will emphasize full custom design of GaAs digital ICs. The MAGIC layout editor, SPICE, and associated verification tools will be utilized for the design projects. The course will cover the following topics: 1. Introduction to GaAs devices and models. 2. Logic design principles and examples 3. Interconnection design rules 4. Test procedures for GaAs digital ICs 5. Layout and simulation tools 6. Layout design rules and the MOSIS interface 7. A design project will be included. The projects will be submitted for fabrication to MOSIS and made available for testing in packaged form in the fall. The class will use a new textbook, GaAs Digital IC Design, by S. Long and S. Butner, which will be in print by McGraw-Hill by the end of 1989. You should contact Steve Long (long@hub.ucsb.edu) if you need further information regarding the course description or contents. Local Arrangements: Arrangements for housing in the UCSB Santa Rosa Hall have been made for as many as 40 participants. The facility has been recently remodeled and is quite nice (for a dorm!). It should be fairly quiet as well as it is being shared with a cardiology conference during the 10 day period. The accommodations include a single room, all meals, and room service for $54.10 per day. We must have a commitment by those planning to stay in the dorms BY JUNE 24. There will also be a registration charge (to be determined) to cover course materials, breaks, and computer charges which must be paid by the attendees. UCSB is conveniently located 5 minutes from the Santa Barbara airport, so local transportation would not be required for those attending the course. Please contact Kathy Kramer (805) 961-2149 or kk@xanadu.ucsb.edu for reservations and information on local arrangements. Message 38 -- ************************ 1-Apr-89 03:52:30-PST,1657;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Sat, 1 Apr 89 03:52:15 PST Posted-Date: 1-APR-1989 00:09:00 Message-Id: <8904011142.AA02154@vlsif.isi.edu> Received: from cheeta.isi.edu by vlsif.isi.edu (5.61/5.51) id AA02154; Sat, 1 Apr 89 03:42:11 -0800 Date: 1-APR-1989 00:09:00 From: XMOSIS@Cheeta.ISI.Edu Subject: ELECTRODE DESIGN RULES Reply-To: DELATORRE@VLSI-CAD.ISI.EDU Dear MOSIS Users, The poly2 (electrode) design rules for use with SCPE, SCEE or SCGE technologies in 2 micron processes will continue to be preliminary until we have finished assessing 1.5 micron processes and determined whether or not we have to make changes. Since the rest of the Scalable CMOS Rev 6 design rule set will remain unchanged, MOSIS has decided to separate the electrode design rules from the Rev 6 design rules. The division has resulted in changes in the way that the plotable CIF design rule files are obtained from the Online Documentation Service. MOSIS has made other significant updates in the files available through the Online Documentation and Library Services. Particularly noteworthy are additional pads available through the Library Service and updated electrical specifications and parameters available through the Online Documentation Service. The electrode design rules and introductory files concerning the Online Documentation and Library Services can be obtained by sending a message to MOSIS@MOSIS.EDU containing the following text. REQUEST: INFORMATION TOPIC: SCRULES_ELECTRODE, TOPICS, LIBRARY REQUEST: END The MOSIS Service Message 37 -- ************************ 31-Mar-89 11:28:56-PST,3989;000000000000 Return-path: Received: from venera.isi.edu by Cheeta.ISI.Edu with INTERNET ; Fri, 31 Mar 89 11:27:51 PST Received: from vlsif.isi.edu by venera.isi.edu (5.54/5.51) id AA02926; Fri, 31 Mar 89 11:28:37 PST Posted-Date: 31-MAR-1989 06:54:02 Message-Id: <8903311542.AA20446@vlsif.isi.edu> Received: from cheeta.isi.edu by vlsif.isi.edu (5.61/5.51) id AA20446; Fri, 31 Mar 89 07:42:15 -0800 Date: 31-MAR-1989 06:54:02 From: XMOSIS@cheeta.isi.edu Subject: NEW MOSIS DOCUMENTS Reply-To: vlsi.attn@a.isi.edu Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Friday, March 31, 1989 Files created in the past 30 days: 28PC23X34.CIF 19670 28-Mar-89 17:12:01 ANNOUNCEMENTS.INF 190038 28-Mar-89 3:19:01 ANS. 550 13-Mar-89 14:49:39 CMOS_G.TECH 31314 30-Mar-89 10:50:41 GEN.INF 5828 27-Mar-89 15:48:07 GETTING_STARTED.INF 6156 27-Mar-89 15:59:00 LIBINF.DOC 14800 29-Mar-89 15:07:40 M91I.PRM 4940 3-Mar-89 17:17:35 M91I.STS 840 8-Mar-89 13:12:48 M91J.PRM 7698 3-Mar-89 17:19:07 M91J.STS 858 10-Mar-89 15:58:16 M91K.PRM 7694 10-Mar-89 12:01:29 M91K.STS 858 20-Mar-89 10:00:43 M91L.PRM 5454 21-Mar-89 9:22:18 M91L.STS 830 27-Mar-89 9:48:42 M92M.PRM 5034 27-Mar-89 8:39:19 M92M.STS 842 23-Mar-89 9:42:04 M92N.STS 740 21-Mar-89 9:56:23 M92O.STS 858 28-Mar-89 10:57:41 M92P.STS 874 28-Mar-89 18:35:35 M92Q.STS 884 14-Mar-89 18:09:05 M92R.STS 884 9-Mar-89 16:31:20 M93S.STS 856 28-Mar-89 11:00:17 M93T.STS 884 24-Mar-89 9:02:43 M93U.STS 894 28-Mar-89 16:11:15 PROJ_SUB.INF 12024 27-Mar-89 16:00:55 SCHED.INF 8164 27-Mar-89 12:20:12 SCN20_VTI_2UMSPICE.INF 2414 13-Mar-89 10:14:22 SCRULES_ELEC_CAP.CIF 21360 8-Mar-89 11:37:20 SCRULES_ELEC_CONT.CIF 19942 8-Mar-89 12:04:54 SCRULES_ELEC_GATE.CIF 22860 8-Mar-89 12:04:21 SCRULES_HISTORY.INF 4514 27-Mar-89 11:49:41 TOPICS.INF 7024 29-Mar-89 15:34:45 VENDOR_BSIM.INF 956 9-Mar-89 15:56:26 VENDOR_PRM.INF 2396 24-Mar-89 10:03:02 VENDOR_SPECS.INF 470 2-Mar-89 9:19:47 VENDOR_SPICE.INF 642 9-Mar-89 15:55:32 [] Message 36 -- ************************ 30-Mar-89 14:00:07-PST,11770;000000000000 Return-path: Received: from venera.isi.edu by Cheeta.ISI.Edu with INTERNET ; Thu, 30 Mar 89 13:59:35 PST Received: from vlsif.isi.edu by venera.isi.edu (5.54/5.51) id AA25455; Thu, 30 Mar 89 13:26:01 PST Posted-Date: 28-MAR-1989 00:09:45 Message-Id: <8903281405.AA22123@vlsif.isi.edu> Received: from cheeta.isi.edu by vlsif.isi.edu (5.61/5.51) id AA22123; Tue, 28 Mar 89 06:05:45 -0800 Date: 28-MAR-1989 00:09:45 From: XMOSIS@cheeta.isi.edu Subject: CHANGE IN 3 MICRON RUN SCHEDULING Reply-To: DELATORRE@vlsi-cad.isi.edu Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Apparently-To: Dear MOSIS Users: MOSIS has decided to schedule 3 micron runs with decreasing frequency since many of our designers have transitioned to 2 microns resulting in decreased demand for 3 micron projects. Starting immediately and through July 1989, 3 micron runs will be held once every two months. After July 1989 they will be held once every three months. After a year 3 micron runs may be phased out completely. PLEASE NOTE that the immediate effect of the scheduling change is that the 3 micron run previously scheduled for April 13th has been canceled. The next 3 micron run will be held on May 11th. It's a good time to design in 2 micron CMOS. - 2 micron runs are available in CMOS N-Well and CMOS P-Well; the CMOS P-Well is available in both single and double poly, - The quality of 2 micron fabrication has been excellent. - Since August, average 2 micron turnaround has been 7.4 weeks. - TinyChips are available on all 2 micron runs. - Analog and digital stuffed and unstuffed frames are available for 2 micron N-Well and P-Well projects. MOSIS welcomes your comments and encourages you to contact us if we can be of assistance with your transition from 3 to 2 microns. Please address your inquiries to MOSIS@MOSIS.EDU with "REQUEST: ATTENTION" as your first line of text. Messages addressed in this fashion are interpreted by MOSIS software and forwarded to a mailbox that is monitored by MOSIS staff. Please do not use any other colon's in the text of your message since they are used as command terminators and may confuse the software. Appended below is new fabrication schedule valid through Nov. 1989. The MOSIS Service Fabrication Schedule (April, 1988 - November, 1989) ======================================================================== DATE CLOSED CODE FEATURE SIZE TECHNOLOGY ======================================================================== THU: APR 6 C 2.0u CMOS P-WELL DOUBLE POLY THU: APR 13 THU: APR 20 D 2.0u CMOS N-WELL THU: APR 27 ------------------------------------------------------------------------ THU: MAY 4 C 2.0u CMOS P-WELL DOUBLE POLY THU: MAY 11 A 3.0u CMOS P-WELL THU: MAY 18 D 2.0u CMOS N-WELL THU: MAY 25 ------------------------------------------------------------------------ THU: JUN 1 C 2.0u CMOS P-WELL DOUBLE POLY THU: JUN 8 THU: JUN 15 D 2.0u CMOS N-WELL THU: JUN 22 THU: JUN 29 C 2.0u CMOS P-WELL DOUBLE POLY ------------------------------------------------------------------------ THU: JUL 6 THU: JUL 13 D 2.0u CMOS N-WELL THU: JUL 20 A 3.0u CMOS P-WELL THU: JUL 27 C 2.0u CMOS P-WELL DOUBLE POLY ------------------------------------------------------------------------ THU: AUG 3 THU: AUG 10 D 2.0u CMOS N-WELL THU: AUG 17 THU: AUG 24 C 2.0u CMOS P-WELL DOUBLE POLY THU: AUG 31 ------------------------------------------------------------------------ THU: SEP 7 D 2.0u CMOS N-WELL THU: SEP 14 THU: SEP 21 C 2.0u CMOS P-WELL DOUBLE POLY THU: SEP 28 ------------------------------------------------------------------------ THU: OCT 5 D 2.0u CMOS N-WELL THU: OCT 12 A 3.0u CMOS P-WELL THU: OCT 19 C 2.0u CMOS P-WELL DOUBLE POLY THU: OCT 26 ------------------------------------------------------------------------ THU: NOV 2 D 2.0u CMOS N-WELL THU: NOV 9 THU: NOV 16 C 2.0u CMOS P-WELL DOUBLE POLY THU: NOV 23 THU: NOV 30 D 2.0u CMOS N-WELL ------------------------------------------------------------------------ PLEASE NOTE: TINYCHIPS may be submitted to all runs on this schedule. 2.0 MICRON DOUBLE POLY RUNS support both double and single poly designs. SCHEDULE CHANGES: MOSIS will make every attempt to keep this schedule, however, changes may be unavoidable. For schedule confirmation, send a message to MOSIS@MOSIS.EDU with the following text: REQUEST: INFORMATION TOPIC: SCHEDULE REQUEST: END TO PARTICIPATE IN ON-DEMAND 1.6 and 1.2 RETICLE-BASED RUNS: MOSIS 1.2 micron N-well (lambda=0.6 microns) and 1.6 micron N-well runs (lambda=0.8 microns) are initiated on-demand, which means that MOSIS will start a run only after enough projects have been received to fill the run. The following rules make it possible for MOSIS to combine designs of different sizes, from different organizations onto a 5X reticle set which defines a 14 x 14 mm die. 1. SPACE ON 1.2U AND 1.6U RUNS MUST BE RESERVED. This can be done by sending a note to Terri Lewis in an ATTENTION message. The message should indicate: A. your desire to get on either a 1.6 or 1.2 micron run; B. the width and height in millimeters of the space you would like to reserve; C. an estimate of the date you will submit your project. 2. MOSIS WILL SCHEDULE YOUR RUN when enough reservations have been received. We will contact you at that time to confirm your project size and give you the run closing date. 3. MOSIS WILL CHARGE YOU OR YOUR SPONSOR when the run is scheduled. There will be no refunds once the final negotiations are complete and your run has been scheduled. PRODUCTION ORDERS: To place an order for an entire wafer lot of a single die type, contact Cesar Pina at (213) 822-1511, or via an ATTENTION message. If you are sending a message, be sure to include all specifications since these jobs will be quoted on an individual basis. PROJECT SUBMISSION: Geometry sent via electronic mail must be received and accepted by MOSIS before 7:00 a.m. on the day the run closes. Geometry on magnetic tape must be received and accepted by MOSIS at least 48 hours before the run closes. Please allow plenty of time when you submit a project; MOSIS cannot delay a run to wait for late designs. ONLINE USERS: Please check the following 'TABLE OF TECHNOLOGY CODES' for the MOSIS technologies that are acceptable on a given run. For TinyChip submissions, you MUST use a "TINY" technology, e.g., "TINY-SCP". You must also put in a 'STD-FRAME' request for the MOSIS 28PC23x34 Standard Frame (for 3.0um TinyChip), or 40PC22X22 (for 2.0um TinyChip). Standard Frames, which have bonding pads at specific locations, are required if you desire TinyChip packaged parts. To request unpackaged parts, make sure to include the parameter 'PADS: 0' in your new project request. TABLE OF TECHNOLOGY CODES ======================================================== CODE MOSIS DESIGN TECHNOLOGIES LAMBDA ======================================================== A CBPM none SCP 1.5u SCG 1.5u SCE 1.5u --------------------------------------------------- B CBPE none (none scheduled) CBP none --------------------------------------------------- C SCP 1.0u SCG 1.0u SCE 1.0u SCPE 1.0u SCGE 1.0u SCEE 1.0u --------------------------------------------------- D SCN 1.0u SCG 1.0u SCE 1.0u -------------------------------------------------- E SCN 0.8u (on-demand) SCG 0.8u SCE 0.8u -------------------------------------------------- F SCN 0.6u (on-demand) SCG 0.6u SCE 0.6u ======================================================== TECHNOLOGY DESCRIPTIONS 3 Micron CMOS ------------------------------------------------------------------------- CBPM: CMOS/Bulk P-well (double metal) FEATURE SIZE: 3 microns only LAMBDA: none REFERENCES: MOSIS 3 Micron P-well CMOS Design Rules, November 1985 (Revision 2) CMOS3 Cell Library, May 1986, (Release 6.1); NOTE: The CMOS3 Cell Library is for CBPM only. Scalable CMOS -------------------------------------------------------------------------- SCP: Scalable CMOS, P-well SCN: Scalable CMOS, N-well SCG: Scalable CMOS, Generic Well SCE: Scalable CMOS, Either Well SCPE: Scalable CMOS, P-well double poly SCNE: Scalable CMOS, N-well double poly SCGE: Scalable CMOS, Generic Well, double poly SCEE: Scalable CMOS, Either Well, double poly FEATURE SIZE: 1.2 to 3.0 microns LAMBDA: .6 to 1.5 microns REFERENCE: MOSIS Scalable and Generic CMOS Design Rules, February, 1988 (Revision 6) CMOSN Cell Library Scalable 2.0 and 1.2 Micron CMOS/Bulk Cell Library (Release 1.0) FS112988 Message 35 -- ************************ 28-Mar-89 06:25:34-PST,10236;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Tue, 28 Mar 89 06:25:13 PST Posted-Date: 28-MAR-1989 00:09:45 Message-Id: <8903281405.AA22123@vlsif.isi.edu> Received: from cheeta.isi.edu by vlsif.isi.edu (5.61/5.51) id AA22123; Tue, 28 Mar 89 06:05:45 -0800 Date: 28-MAR-1989 00:09:45 From: XMOSIS@Cheeta.ISI.Edu Subject: CHANGE IN 3 MICRON RUN SCHEDULING Reply-To: DELATORRE@VLSI-CAD.ISI.EDU Dear MOSIS Users: MOSIS has decided to schedule 3 micron runs with decreasing frequency since many of our designers have transitioned to 2 microns resulting in decreased demand for 3 micron projects. Starting immediately and through July 1989, 3 micron runs will be held once every two months. After July 1989 they will be held once every three months. After a year 3 micron runs may be phased out completely. PLEASE NOTE that the immediate effect of the scheduling change is that the 3 micron run previously scheduled for April 13th has been canceled. The next 3 micron run will be held on May 11th. It's a good time to design in 2 micron CMOS. - 2 micron runs are available in CMOS N-Well and CMOS P-Well; the CMOS P-Well is available in both single and double poly, - The quality of 2 micron fabrication has been excellent. - Since August, average 2 micron turnaround has been 7.4 weeks. - TinyChips are available on all 2 micron runs. - Analog and digital stuffed and unstuffed frames are available for 2 micron N-Well and P-Well projects. MOSIS welcomes your comments and encourages you to contact us if we can be of assistance with your transition from 3 to 2 microns. Please address your inquiries to MOSIS@MOSIS.EDU with "REQUEST: ATTENTION" as your first line of text. Messages addressed in this fashion are interpreted by MOSIS software and forwarded to a mailbox that is monitored by MOSIS staff. Please do not use any other colon's in the text of your message since they are used as command terminators and may confuse the software. Appended below is new fabrication schedule valid through Nov. 1989. The MOSIS Service The MOSIS Service Fabrication Schedule (April, 1988 - November, 1989) ======================================================================== DATE CLOSED CODE FEATURE SIZE TECHNOLOGY ======================================================================== THU: APR 6 C 2.0u CMOS P-WELL DOUBLE POLY THU: APR 13 THU: APR 20 D 2.0u CMOS N-WELL THU: APR 27 ------------------------------------------------------------------------ THU: MAY 4 C 2.0u CMOS P-WELL DOUBLE POLY THU: MAY 11 A 3.0u CMOS P-WELL THU: MAY 18 D 2.0u CMOS N-WELL THU: MAY 25 ------------------------------------------------------------------------ THU: JUN 1 C 2.0u CMOS P-WELL DOUBLE POLY THU: JUN 8 THU: JUN 15 D 2.0u CMOS N-WELL THU: JUN 22 THU: JUN 29 C 2.0u CMOS P-WELL DOUBLE POLY ------------------------------------------------------------------------ THU: JUL 6 THU: JUL 13 D 2.0u CMOS N-WELL THU: JUL 20 A 3.0u CMOS P-WELL THU: JUL 27 C 2.0u CMOS P-WELL DOUBLE POLY ------------------------------------------------------------------------ THU: AUG 3 THU: AUG 10 D 2.0u CMOS N-WELL THU: AUG 17 THU: AUG 24 C 2.0u CMOS P-WELL DOUBLE POLY THU: AUG 31 ------------------------------------------------------------------------ THU: SEP 7 D 2.0u CMOS N-WELL THU: SEP 14 THU: SEP 21 C 2.0u CMOS P-WELL DOUBLE POLY THU: SEP 28 ------------------------------------------------------------------------ THU: OCT 5 D 2.0u CMOS N-WELL THU: OCT 12 A 3.0u CMOS P-WELL THU: OCT 19 C 2.0u CMOS P-WELL DOUBLE POLY THU: OCT 26 ------------------------------------------------------------------------ THU: NOV 2 D 2.0u CMOS N-WELL THU: NOV 9 THU: NOV 16 C 2.0u CMOS P-WELL DOUBLE POLY THU: NOV 23 THU: NOV 30 D 2.0u CMOS N-WELL ------------------------------------------------------------------------ PLEASE NOTE: TINYCHIPS may be submitted to all runs on this schedule. 2.0 MICRON DOUBLE POLY RUNS support both double and single poly designs. SCHEDULE CHANGES: MOSIS will make every attempt to keep this schedule, however, changes may be unavoidable. For schedule confirmation, send a message to MOSIS@MOSIS.EDU with the following text: REQUEST: INFORMATION TOPIC: SCHEDULE REQUEST: END TO PARTICIPATE IN ON-DEMAND 1.6 and 1.2 RETICLE-BASED RUNS: MOSIS 1.2 micron N-well (lambda=0.6 microns) and 1.6 micron N-well runs (lambda=0.8 microns) are initiated on-demand, which means that MOSIS will start a run only after enough projects have been received to fill the run. The following rules make it possible for MOSIS to combine designs of different sizes, from different organizations onto a 5X reticle set which defines a 14 x 14 mm die. 1. SPACE ON 1.2U AND 1.6U RUNS MUST BE RESERVED. This can be done by sending a note to Terri Lewis in an ATTENTION message. The message should indicate: A. your desire to get on either a 1.6 or 1.2 micron run; B. the width and height in millimeters of the space you would like to reserve; C. an estimate of the date you will submit your project. 2. MOSIS WILL SCHEDULE YOUR RUN when enough reservations have been received. We will contact you at that time to confirm your project size and give you the run closing date. 3. MOSIS WILL CHARGE YOU OR YOUR SPONSOR when the run is scheduled. There will be no refunds once the final negotiations are complete and your run has been scheduled. PRODUCTION ORDERS: To place an order for an entire wafer lot of a single die type, contact Cesar Pina at (213) 822-1511, or via an ATTENTION message. If you are sending a message, be sure to include all specifications since these jobs will be quoted on an individual basis. PROJECT SUBMISSION: Geometry sent via electronic mail must be received and accepted by MOSIS before 7:00 a.m. on the day the run closes. Geometry on magnetic tape must be received and accepted by MOSIS at least 48 hours before the run closes. Please allow plenty of time when you submit a project; MOSIS cannot delay a run to wait for late designs. ONLINE USERS: Please check the following 'TABLE OF TECHNOLOGY CODES' for the MOSIS technologies that are acceptable on a given run. For TinyChip submissions, you MUST use a "TINY" technology, e.g., "TINY-SCP". You must also put in a 'STD-FRAME' request for the MOSIS 28PC23x34 Standard Frame (for 3.0um TinyChip), or 40PC22X22 (for 2.0um TinyChip). Standard Frames, which have bonding pads at specific locations, are required if you desire TinyChip packaged parts. To request unpackaged parts, make sure to include the parameter 'PADS: 0' in your new project request. TABLE OF TECHNOLOGY CODES ======================================================== CODE MOSIS DESIGN TECHNOLOGIES LAMBDA ======================================================== A CBPM none SCP 1.5u SCG 1.5u SCE 1.5u --------------------------------------------------- B CBPE none (none scheduled) CBP none --------------------------------------------------- C SCP 1.0u SCG 1.0u SCE 1.0u SCPE 1.0u SCGE 1.0u SCEE 1.0u --------------------------------------------------- D SCN 1.0u SCG 1.0u SCE 1.0u -------------------------------------------------- E SCN 0.8u (on-demand) SCG 0.8u SCE 0.8u -------------------------------------------------- F SCN 0.6u (on-demand) SCG 0.6u SCE 0.6u ======================================================== TECHNOLOGY DESCRIPTIONS 3 Micron CMOS ------------------------------------------------------------------------- CBPM: CMOS/Bulk P-well (double metal) FEATURE SIZE: 3 microns only LAMBDA: none REFERENCES: MOSIS 3 Micron P-well CMOS Design Rules, November 1985 (Revision 2) CMOS3 Cell Library, May 1986, (Release 6.1); NOTE: The CMOS3 Cell Library is for CBPM only. Scalable CMOS -------------------------------------------------------------------------- SCP: Scalable CMOS, P-well SCN: Scalable CMOS, N-well SCG: Scalable CMOS, Generic Well SCE: Scalable CMOS, Either Well SCPE: Scalable CMOS, P-well double poly SCNE: Scalable CMOS, N-well double poly SCGE: Scalable CMOS, Generic Well, double poly SCEE: Scalable CMOS, Either Well, double poly FEATURE SIZE: 1.2 to 3.0 microns LAMBDA: .6 to 1.5 microns REFERENCE: MOSIS Scalable and Generic CMOS Design Rules, February, 1988 (Revision 6) CMOSN Cell Library Scalable 2.0 and 1.2 Micron CMOS/Bulk Cell Library (Release 1.0) FS112988 Message 34 -- ************************ 9-Mar-89 19:16:59-PST,1261;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Thu, 9 Mar 89 19:16:41 PST Posted-Date: 9-MAR-1989 18:32:44 Message-Id: <8903100301.AA09883@vlsif.isi.edu> Received: from cheeta.isi.edu by vlsif.isi.edu (5.61/5.51) id AA09883; Thu, 9 Mar 89 19:01:47 -0800 Date: 9-MAR-1989 18:32:44 From: XMOSIS@Cheeta.ISI.Edu Subject: New VTI Metallization Reply-To: vlsi.attn@a.isi.edu Gentlepersons, VLSI Technology has informed us that they have completed transfer of the metallization scheme used in their 1.5 micron process to their 2.0 micron process. The benefit is a significant improvement in yield. The penalty, if it can be called that, is an increase in sheet resistance of metal1 and metal2 by approximately a factor of 2. The sheet resistance of metal1 will go from less than 50 millihoms per square to 80-120 millihoms per square. The sheet resistance of metal2 will go from less than 40 millihoms per square to 80-120 millihoms per square. MOSIS will be switching over to the new metallization scheme starting on the run scheduled for April 20. If you have any serious difficulties with this, please send an ATTENTION message to MOSIS@MOSIS.EDU. Cheers, Ms. MOSIS Message 33 -- ************************ 28-Feb-89 19:18:03-PST,1849;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Tue, 28 Feb 89 19:17:34 PST Posted-Date: 28-FEB-1989 17:56:42 Message-Id: <8903010306.AA27790@vlsif.isi.edu> Received: from cheeta.isi.edu by vlsif.isi.edu (5.61/5.51) id AA27790; Tue, 28 Feb 89 19:06:41 -0800 Date: 28-FEB-1989 17:56:42 From: XMOSIS@Cheeta.ISI.Edu Subject: NEW MOSIS DOCUMENTS Reply-To: vlsi.attn@a.isi.edu Tuesday, February 28, 1989 Files created in the past 30 days: ANNOUNCEMENTS.INF 179375 4-Feb-89 3:20:10 BOND.INF 10564 30-Jan-89 11:26:44 LIBINF.DOC 9300 13-Feb-89 8:21:06 M8BA.STS 790 31-Jan-89 9:18:42 M8CC.STS 858 31-Jan-89 9:21:48 M8CD.STS 840 31-Jan-89 9:27:56 M8CF.BSIM_PRM 2622 9-Feb-89 16:18:16 M8CF.PRM 7722 9-Feb-89 16:18:14 M8CF.STS 858 19-Feb-89 17:45:31 M8CG.BSIM_PRM 2612 16-Feb-89 17:30:42 M8CG.PRM 5358 17-Feb-89 8:38:25 M8CG.STS 842 23-Feb-89 11:22:55 M8CH.BSIM_PRM 2613 21-Feb-89 7:34:42 M8CH.PRM 7700 21-Feb-89 7:34:40 M8CH.STS 858 23-Feb-89 17:20:30 M91I.STS 856 23-Feb-89 11:28:37 M91J.STS 874 24-Feb-89 16:24:55 M91K.STS 894 31-Jan-89 9:48:55 M91L.STS 872 22-Feb-89 9:55:57 M92M.STS 890 6-Feb-89 15:42:36 M92O.STS 872 24-Feb-89 8:14:01 M92P.STS 886 24-Feb-89 16:29:56 SCN16_HP_BSIM.INF 560 17-Feb-89 8:53:04 SCRULES_HISTORY.INF 4424 15-Feb-89 16:49:07 TEMPLATES.INF 17550 30-Jan-89 10:05:09 TINYCHIP.INF 6422 8-Feb-89 15:44:07 [] Message 32 -- ************************ 4-Feb-89 05:43:19-PST,2185;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Sat, 4 Feb 89 05:43:10 PST Posted-Date: 3-FEB-1989 12:38:54 Message-Id: <8902041342.AA09496@vlsif.isi.edu> Received: by vlsif.isi.edu (5.54/5.51) id AA09496; Sat, 4 Feb 89 05:42:51 Date: 3-FEB-1989 12:38:54 From: XMOSIS@cheeta.isi.edu Subject: NEW MOSIS DOCUMENTS To: mosis-bboard@cheeta.isi.edu Reply-To: vlsi.attn@a.isi.edu Friday, February 3, 1989 Files created in the past 30 days: ANNOUNCEMENTS.INF 176523 13-Jan-89 11:50:50 BOND.INF 10564 30-Jan-89 11:26:44 CHAPT13.DOC 90382 12-Jan-89 11:32:30 LIBINF.DOC 9118 17-Jan-89 14:08:35 M88I.BSIM_PRM 2742 18-Jan-89 17:02:29 M88I.PRM 7758 18-Jan-89 17:02:26 M8AX.BSIM_PRM 2730 9-Jan-89 13:40:42 M8AX.PRM 5458 9-Jan-89 13:40:41 M8AX.STS 842 9-Jan-89 21:39:26 M8BA.STS 790 31-Jan-89 9:18:42 M8BB.BSIM_PRM 2740 17-Jan-89 11:16:54 M8BB.PRM 7724 17-Jan-89 11:16:53 M8BB.STS 858 23-Jan-89 9:58:20 M8CC.BSIM_PRM 2740 26-Jan-89 11:59:10 M8CC.PRM 7712 26-Jan-89 11:59:08 M8CC.STS 858 31-Jan-89 9:21:48 M8CD.PRM 5038 25-Jan-89 8:54:47 M8CD.STS 840 31-Jan-89 9:27:56 M8CF.STS 874 2-Feb-89 8:54:23 M8CG.STS 892 5-Jan-89 8:04:03 M8CH.STS 886 31-Jan-89 9:40:35 M91I.STS 872 20-Jan-89 11:14:34 M91J.STS 886 26-Jan-89 9:23:56 M91K.STS 894 31-Jan-89 9:48:55 M91L.STS 876 1-Feb-89 10:26:06 SCMOS.TECH 81860 20-Jan-89 10:29:42 SCN16_HP_BSIM.INF 544 6-Jan-89 12:33:43 SCPE20_ORBIT_SPECS.INF 7882 27-Jan-89 14:29:23 SCRULES6_20.CIF 10204 25-Jan-89 15:45:47 SCRULES6_21.CIF 13036 25-Jan-89 15:47:35 TEMPLATES.INF 17550 30-Jan-89 10:05:09 TINYCHIP.INF 6386 23-Jan-89 16:12:14 [] Message 31 -- ************************ 3-Feb-89 15:38:48-PST,2785;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Fri, 3 Feb 89 15:38:34 PST Posted-Date: 3-FEB-1989 01:26:09 Message-Id: <8902032338.AA23505@vlsif.isi.edu> Received: by vlsif.isi.edu (5.54/5.51) id AA23505; Fri, 3 Feb 89 15:38:14 Date: 3-FEB-1989 01:26:09 From: XMOSIS@cheeta.isi.edu Subject: Laser Direct Write Deposition and Etching To: mosis-bboard@cheeta.isi.edu Reply-To: BLACK%MICRO@ll-vlsi.arpa Dear MOSIS Users, The following text is forwarded from Dan Ehrlich and Jerry Black of Lincoln Labs. We have developed a series of laser-direct-write deposition and etching techniques for rerouting of CMOS and GaAs digital circuits. These methods are distinct from other laser linking techniques (e.g., wafer-scale systems) in that they are designed to make arbitrary modifications to chips which have no design provisions for laser processing. Thus far we have performed several successful repair/restructuring sequences (including adding new conductors) on Lincoln Laboratory MOSIS chips which had minor, but fatal design flaws. These would have ordinarily required a resubmission to the foundry to obtain a testable chip. Polysilicon, first and second metal lines were cut and rewired, accelerating debugging to several-hour turnaround times and bypassing unnecessary iterations through the MOSIS processing cycle. Internal probing points were opened in the circuits, also aiding the debugging work. It is believed that many members of the DARPA/ISTO community would benefit from a rapid fix of a small number of design flaws as a means of speeding complex system development. We would be interested, on a trial basis, in broadening our experience with one or two such projects using our established facility and expertise. On our present equipment, we have found the following, approximately stated, constraints on the laser repair of MOSIS chips: Preparation of contact openings (instant vias) to poly or metal layers: Opening size variable from 4 x 4 micrometers, to 100 x 100 micrometers. 2-micrometer lateral separation to nearest circuit feature Poly or metal cuts: Size of cut variable from 4 x 4 micrometers, to 100 x 100 micrometers. 5-micrometer lateral separation to nearest circuit feature Directly-written interconnections: 5 to 10 micrometers wide, 200 Ohms/mm resistance, 15 micrometer minimum pitch. Contact resistance <1 ohm. For further information please contact Jerry Black or Dan Ehrlich at black%micro@LL-VLSI.ARPA or ehrlich%micro@LL-VLSI.ARPA. Message 30 -- ************************ 15-Jan-89 15:00:32-PST,25986;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Sun, 15 Jan 89 15:00:13 PST Posted-Date: 13-JAN-1989 04:38:00 Message-Id: <8901152258.AA02010@vlsif.isi.edu> Received: by vlsif.isi.edu (5.54/5.51) id AA02010; Sun, 15 Jan 89 14:58:01 Date: 13-JAN-1989 04:38:00 From: XMOSIS@cheeta.isi.edu Subject: SECOND POLY DESIGN RULE REVISIONS To: mosis-bboard@cheeta.isi.edu Reply-To: DELATORRE@vlsi-cad.isi.edu Dear MOSIS users, MOSIS has modified the preliminary poly2 (electrode) design rules for use with SCPE, SCEE or SCGE technologies. The minimum spacing between electrode and contact to poly must be 3 lambda. This was implied in the previously distributed CIF plot but not explicitly called out in the design rules. The Minimum spacing between electrode and contact to active is also 3 lambda. The previous CIF plot incorrectly depicted the separation as 3 lambda in the vertical direction but only 2 lambda in the horizontal. The separation should be 3 lambda in both directions. A new SCMOS.TECH Magic technology file which incorporates the latest revisions is online. Cheers, Ms. MOSIS SECOND POLY RULES MIN VALUE IN LAMBDA LAYER CONTACT TO ELECTRODE 1. One size only 2x2 2. Space to contact to electrode 2 3. Electrode overlap of contact to electrode ON capacitor plate 3 4. Electrode overlap of contact to electrode NOT on capacitor plate 2 5. Space to poly 3 6. Space to active 3 ELECTRODE LAYER IN A PRECISION CAPACITOR 1. Poly overlaps electrode by 2 2. Inner plate space to active or well edge 2 3. Space to contact to poly 3 4. Pselect and nselect may not cross capacitor plates. This prevents different oxide thicknesses and plate sheet resistivities across the capacitor ELECTRODE AS GATE AND INTERCONNECT 1. Overlap of active 2 2. Space to active 1 3. Min width 2 4. Min space to electrode 3 5. Min space to or overlap by poly 2 6. Min space to contact to active 3 7. Min space to contact to poly 3 The following CIF file can be plotted to show the use of the poly2 layer as a upper electrode for precision capacitors: DS1 100/10; C2 ; DF; DS2 100/10; C3 ; C4 T-115 282 ; C4 T318 282 ; C4 T-115 -105 ; C4 T318 -105 ; C5 T-114 254 ; C6 T-102 254 ; C7 T-92 254 ; C6 T-81 254 ; C5 T-70 254 ; C8 T-59 254 ; C9 T-51 254 ; C10 T-40 254 ; C11 T-29 254 ; C12 T-6 254 ; C13 T5 254 ; C6 T16 254 ; C14 T27 254 ; C7 T38 254 ; C15 T49 254 ; C12 T60 254 ; C16 T83 254 ; C8 T94 254 ; C9 T102 254 ; C17 T112 254 ; C15 T136 254 ; C6 T147 254 ; C14 T157 254 ; C18 T168 254 ; C19 T179 254 ; C6 T190 254 ; C10 T213 254 ; C20 T225 254 ; C12 T235 254 ; C14 T259 254 ; C8 T270 254 ; C5 T277 254 ; C11 T288 254 ; C10 T299 254 ; C20 T310 254 ; DF; DS4 100/10; LCPG; B20 20 0 0; DF; DS20 100/10; LCPG; P8 13 8 -1 6 -1 1 9 1 -1 -1 -1 -1 12 0 13 6 3 6 13; DF; DS19 100/10; LCPG; P-1 1 5 1 6 2 6 10 5 11 1 11 1 -1 -1 -1 -1 13 5 13 8 10 8 1 5 -1 -1 -1; DF; DS18 100/10; LCPG; P-1 8 5 8 6 9 6 10 5 11 1 11 1 -1 -1 -1 -1 13 5 13 8 10 8 8 5 6 -1 6; P-1 1 5 1 6 2 6 5 4 7 5 8 8 5 8 1 5 -1 -1 -1; DF; DS17 100/10; LCPG; P1 13 1 -1 -1 -1 -1 13; P8 13 8 -1 6 -1 6 13; P8 6 -1 6 -1 8 8 8; DF; DS16 100/10; LCPG; P8 13 8 -1 6 -1 3 5 0 -1 -1 -1 -1 13 1 13 1 4 3 8 4 8 6 4 6 13; DF; DS15 100/10; LCPG; P1 13 1 1 8 1 8 -1 -1 -1 -1 13; DF; DS14 100/10; LCPG; P6 -1 6 8 4 4 3 4 1 8 1 -1 -1 -1 -1 12 0 13 3 7 6 13 8 12 8 -1; DF; DS13 100/10; LCPG; P8 12 0 -1 -1 0 6 13; P6 -1 -1 12 0 13 8 0; DF; DS12 100/10; LCPG; P8 11 1 11 1 1 8 1 8 -1 -1 -1 -1 13 8 13; P6 6 -1 6 -1 8 6 8; DF; DS11 100/10; LCPG; P-1 8 5 8 6 9 6 10 5 11 1 11 1 -1 -1 -1 -1 13 5 13 8 10 8 8 5 6 -1 6; P6 -1 6 5 4 7 5 8 8 5 8 -1; DF; DS10 100/10; LCPG; P0 3 2 1 5 1 6 2 6 10 5 11 2 11 1 10 1 1 -1 1 -1 10 1 13 5 13 8 10 8 1 5 -1 1 -1 -1 2; DF; DS9 100/10; LCPG; P4 13 4 -1 3 -1 3 13; P8 11 -1 11 -1 13 8 13; DF; DS8 100/10; LCPG; P4 -1 -1 -1 -1 1 4 1; P3 13 3 -1 1 -1 1 13; P4 11 -1 11 -1 13 4 13; DF; DS7 100/10; LCPG; P-1 8 5 8 6 9 6 10 5 11 1 11 1 -1 -1 -1 -1 13 5 13 8 10 8 8 5 6 -1 6; DF; DS6 100/10; LCPG; P6 -1 6 10 5 11 2 11 1 10 1 -1 -1 -1 -1 10 1 13 5 13 8 10 8 -1; P-1 6 8 6 8 4 -1 4; DF; DS5 100/10; LCPG; P8 2 5 -1 1 -1 -1 1 -1 10 1 13 5 13 8 10 7 9 5 11 2 11 1 10 1 2 2 1 5 1 7 3; DF; DS3 100/10; LCPG; B160 120 80 60; LCEL; B80 80 60 60; LCCE; B20 20 60 60; LCCP; B20 20 140 60; LCWP; B140 120 190 60; LCMF; B100 40 30 60; B120 40 180 60; C21 T91 -18 ; C22 T98 -18 ; C23 T105 -18 ; C24 T113 -18 ; C25 T120 -18 ; C21 T127 -18 ; C24 T134 -18 ; C24 T150 -18 ; C22 T157 -18 ; C26 T173 -18 ; C22 T180 -18 ; C27 T188 -18 ; C28 T195 -18 ; C29 T110 133 ; C30 T116 133 ; C31 T122 133 ; C32 T127 133 ; C33 T132 133 ; C29 T138 133 ; C32 T143 133 ; C32 T155 133 ; C30 T161 133 ; C34 T172 133 ; C35 T178 133 ; C34 T183 133 ; C29 T189 133 ; C32 T194 133 ; C36 T200 133 ; C30 T205 133 ; C37 T211 133 ; C34 T216 133 ; C38 T41 107 ; C39 T48 107 ; C40 T56 107 ; C41 T64 107 ; C42 T30 28 ; C43 T36 28 ; C42 T42 28 ; C44 T47 28 ; C45 T53 28 ; C46 T59 28 ; C47 T65 28 ; C48 T70 28 ; C42 T76 28 ; C49 T191 107 ; C50 T199 107 ; C51 T207 107 ; C51 T214 107 ; LCOG; P60 60 110 60 110 130 110 60 60 60; P140 60 140 -10 140 60; C52 T100 45 ; C52 MX T130 45 ; C53 T112 41 ; C54 T100 10 ; C54 MX T120 10 ; C55 T108 7 ; C56 R0 10000 T10 100 ; C56 MX R0 10000 T10 120 ; C55 T8 107 ; C57 R0 10000 T40 50 ; C57 MX R0 10000 T40 70 ; C55 T38 57 ; C58 R0 10000 T60 70 ; C58 MX R0 10000 T60 100 ; C53 T57 81 ; C59 ; C60 ; DF; DS58 100/10; LCPG; P-6 0 0 0 0 -4 0 4 0 0 -3 -2 -2 0 -3 2 0 0 -6 0; DF; DS57 100/10; LCPG; P-4 0 0 0 0 -3 0 3 0 0 -2 -1 -2 0 -2 1 0 0 -4 0; DF; DS56 100/10; LCPG; P-4 0 0 0 0 -3 0 3 0 0 -2 -1 -2 0 -2 1 0 0 -4 0; DF; DS54 100/10; LCPG; P-4 0 0 0 0 -3 0 3 0 0 -2 -1 -2 0 -2 1 0 0 -4 0; DF; DS52 100/10; LCPG; P-6 0 0 0 0 -4 0 4 0 0 -3 -2 -2 0 -3 2 0 0 -6 0; DF; DS60 100/10; C61 T-7 -104 ; C62 T-3 -104 ; C62 T1 -104 ; C62 T4 -104 ; C63 T-114 -3 ; C64 T-109 -3 ; C64 T-103 -3 ; C64 T-97 -3 ; C65 T-114 97 ; C66 T-108 97 ; C67 T-102 97 ; C66 T-98 97 ; DF; DS67 100/10; LCPG; P2 0 0 0 2 0; P-1 5 1 7 1 0 0 0 0 5; DF; DS66 100/10; LCPG; P4 6 0 -1 -1 0 3 7; P4 6 4 1 3 0 1 0 0 1 0 6 1 7 3 7 4 5 3 6 1 6 0 5 0 1 1 0 3 0 3 1 3 6; DF; DS65 100/10; LCPG; P2 5 2 0 1 0 1 5; P4 2 0 2 0 3 4 3; DF; DS64 100/10; LCPG; P4 6 0 -1 -1 0 3 6; P4 5 4 1 3 0 1 0 0 1 0 5 1 6 3 6 4 5 3 4 2 5 1 5 0 5 0 1 1 0 2 0 3 1 3 5; DF; DS63 100/10; LCPG; P2 5 2 0 1 0 1 5; P4 2 0 2 0 3 4 3; DF; DS62 100/10; LCPG; P3 4 0 0 2 4; P2 4 2 0 0 0 0 3 0 4 2 4 3 3 2 3 2 4 1 4 0 3 0 1 1 0 2 0 2 1 2 4; DF; DS61 100/10; LCPG; P1 3 1 0 1 3; P2 1 0 1 0 2 2 2; DF; DS59 100/10; C68 T-10 -60 ; C68 T-10 179 ; C69 T0 -60 ; C69 T0 179 ; C70 T10 -60 ; C70 T10 179 ; C71 T20 -60 ; C71 T20 179 ; C72 T30 -60 ; C72 T30 179 ; C73 T40 -60 ; C73 T40 179 ; C74 T50 -60 ; C74 T50 179 ; C75 T60 -60 ; C75 T60 179 ; C76 T70 -60 ; C76 T70 179 ; C77 T80 -60 ; C77 T80 179 ; C78 T90 -60 ; C78 T90 179 ; C79 T100 -60 ; C79 T100 179 ; C80 T110 -60 ; C80 T110 179 ; C81 T120 -60 ; C81 T120 179 ; C82 T130 -60 ; C82 T130 179 ; C83 T140 -60 ; C83 T140 179 ; C84 T150 -60 ; C84 T150 179 ; C85 T160 -60 ; C85 T160 179 ; C86 T170 -60 ; C86 T170 179 ; C87 T180 -60 ; C87 T180 179 ; C88 T190 -60 ; C88 T190 179 ; C89 T200 -60 ; C89 T200 179 ; C90 T210 -60 ; C90 T210 179 ; C91 T220 -60 ; C91 T220 179 ; C92 T230 -60 ; C92 T230 179 ; C93 T240 -60 ; C93 T240 179 ; C94 T250 -60 ; C94 T250 179 ; C95 T-62 0 ; C95 T302 0 ; C96 T-62 10 ; C96 T302 10 ; C97 T-62 20 ; C97 T302 20 ; C98 T-62 30 ; C98 T302 30 ; C99 T-62 40 ; C99 T302 40 ; C100 T-62 50 ; C100 T302 50 ; C101 T-62 60 ; C101 T302 60 ; C102 T-62 70 ; C102 T302 70 ; C103 T-62 80 ; C103 T302 80 ; C104 T-62 90 ; C104 T302 90 ; C105 T-62 100 ; C105 T302 100 ; C106 T-62 110 ; C106 T302 110 ; C107 T-62 120 ; C107 T302 120 ; C108 T-62 130 ; C108 T302 130 ; DF; DS108 100/10; LCPG; P11 0 -11 0 11 0; DF; DS107 100/10; LCPG; P11 0 -11 0 11 0; DF; DS106 100/10; LCPG; P11 0 -11 0 11 0; DF; DS105 100/10; LCPG; P16 0 -16 0 16 0; DF; DS104 100/10; LCPG; P11 0 -11 0 11 0; DF; DS103 100/10; LCPG; P11 0 -11 0 11 0; DF; DS102 100/10; LCPG; P11 0 -11 0 11 0; DF; DS101 100/10; LCPG; P11 0 -11 0 11 0; DF; DS100 100/10; LCPG; P11 0 -11 0 11 0; DF; DS99 100/10; LCPG; P11 0 -11 0 11 0; DF; DS98 100/10; LCPG; P11 0 -11 0 11 0; DF; DS97 100/10; LCPG; P11 0 -11 0 11 0; DF; DS96 100/10; LCPG; P11 0 -11 0 11 0; DF; DS95 100/10; LCPG; P16 0 -16 0 16 0; DF; DS94 100/10; LCPG; P0 11 0 -11 0 11; DF; DS93 100/10; LCPG; P0 11 0 -11 0 11; DF; DS92 100/10; LCPG; P0 11 0 -11 0 11; DF; DS91 100/10; LCPG; P0 11 0 -11 0 11; DF; DS90 100/10; LCPG; P0 11 0 -11 0 11; DF; DS89 100/10; LCPG; P0 16 0 -16 0 16; DF; DS88 100/10; LCPG; P0 11 0 -11 0 11; DF; DS87 100/10; LCPG; P0 11 0 -11 0 11; DF; DS86 100/10; LCPG; P0 11 0 -11 0 11; DF; DS85 100/10; LCPG; P0 11 0 -11 0 11; DF; DS84 100/10; LCPG; P0 11 0 -11 0 11; DF; DS83 100/10; LCPG; P0 11 0 -11 0 11; DF; DS82 100/10; LCPG; P0 11 0 -11 0 11; DF; DS81 100/10; LCPG; P0 11 0 -11 0 11; DF; DS80 100/10; LCPG; P0 11 0 -11 0 11; DF; DS79 100/10; LCPG; P0 16 0 -16 0 16; DF; DS78 100/10; LCPG; P0 11 0 -11 0 11; DF; DS77 100/10; LCPG; P0 11 0 -11 0 11; DF; DS76 100/10; LCPG; P0 11 0 -11 0 11; DF; DS75 100/10; LCPG; P0 11 0 -11 0 11; DF; DS74 100/10; LCPG; P0 11 0 -11 0 11; DF; DS73 100/10; LCPG; P0 11 0 -11 0 11; DF; DS72 100/10; LCPG; P0 11 0 -11 0 11; DF; DS71 100/10; LCPG; P0 11 0 -11 0 11; DF; DS70 100/10; LCPG; P0 11 0 -11 0 11; DF; DS69 100/10; LCPG; P0 16 0 -16 0 16; DF; DS68 100/10; LCPG; P0 11 0 -11 0 11; DF; DS55 100/10; LCPG; P5 0 -1 0 -1 1 4 3 4 4 3 5 1 5 0 4 -1 5 1 6 4 6 5 5 5 3 1 1 1 0 5 0; DF; DS53 100/10; LCPG; P1 5 6 5 8 4 8 1 6 -1 1 -1 -1 1 0 2 2 1 5 1 6 1 6 3 5 4 1 4; P-1 7 1 8 6 8 8 7 8 5 5 4 4 5 6 6 6 7 5 7 2 7 0 6; DF; DS51 100/10; LCOG; P1 6 1 1 6 1 6 -1 -1 -1 -1 6; DF; DS50 100/10; LCOG; P6 5 1 5 1 1 6 1 6 -1 -1 -1 -1 6 6 6; P4 3 -1 3 -1 4 4 4; DF; DS49 100/10; LCOG; P6 6 6 0 5 -1 2 2 0 -1 -1 0 -1 6 1 6 1 2 2 4 3 4 4 2 4 6; DF; DS48 100/10; LCOG; P0 0 2 0 3 1 3 3 2 4 0 4 0 0 0 4 3 4 4 4 4 0 3 0 0 0; DF; DS47 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 4 1 4 0 3 0 0 0 4 1 4 3 4 4 4 4 0 3 0 1 0 -1 0; DF; DS46 100/10; LCOG; P0 3 2 3 3 3 2 4 0 4 0 0 0 4 3 4 4 4 4 3 3 2 0 2; P3 0 3 1 2 2 2 3 4 2 4 0; DF; DS45 100/10; LCOG; P2 4 2 0 1 0 1 4; P4 4 0 4 4 4; DF; DS44 100/10; LCOG; P4 0 3 0 1 0 0 0 0 4 1 4 3 4 4 4 4 3 2 4 1 4 0 3 0 1 1 0 2 0 4 1; DF; DS43 100/10; LCOG; P0 4 0 0 4 0 0 0 0 4; DF; DS42 100/10; LCOG; P4 4 0 4 0 0 4 0 0 0 0 4 4 4; P3 2 0 2 0 3 3 3; DF; DS41 100/10; LCOG; P0 6 3 3 3 -1 2 -1 2 3 -1 6; P6 6 2 2 2 3 5 6; DF; DS40 100/10; LCOG; P1 6 1 1 5 1 5 -1 -1 -1 -1 6; DF; DS39 100/10; LCOG; P0 2 1 1 3 1 4 1 4 4 3 5 1 5 1 4 1 0 -1 0 -1 5 1 6 4 6 5 5 5 0 4 -1 1 -1 -1 1; DF; DS38 100/10; LCOG; P-1 4 3 4 4 4 3 5 1 5 1 -1 -1 -1 -1 6 4 6 5 5 5 4 4 3 -1 3; DF; DS37 100/10; LCOG; P0 0 2 0 3 1 3 3 2 3 0 3 0 0 0 4 3 4 4 4 4 0 3 0 0 0; DF; DS36 100/10; LCOG; P0 3 2 3 3 3 2 3 0 3 0 0 0 4 3 4 4 4 4 3 3 2 0 2; P3 0 3 1 2 2 2 3 4 2 4 0; DF; DS35 100/10; LCOG; P0 4 0 0 4 0 0 0 0 4; DF; DS34 100/10; LCOG; P4 3 0 3 0 0 4 0 0 0 0 4 4 4; P3 2 0 2 0 3 3 3; DF; DS33 100/10; LCOG; P3 0 3 3 2 3 1 3 0 3 0 0 0 4 1 4 3 4 4 4 4 0; P0 2 4 2 4 1 0 1; DF; DS32 100/10; LCOG; P2 4 2 0 1 0 1 4; P4 3 0 3 0 4 4 4; DF; DS31 100/10; LCOG; P4 4 4 0 3 -1 0 3 0 0 0 4 3 1 3 4; DF; DS30 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 3 1 3 0 3 0 0 0 4 1 4 3 4 4 4 4 0 3 0 1 0 -1 0; DF; DS29 100/10; LCOG; P4 0 3 0 1 0 0 0 0 4 1 4 3 4 4 3 3 3 2 3 1 3 0 3 0 1 1 0 2 0 3 1; DF; DS28 100/10; LCOG; P0 6 3 3 3 -1 2 -1 2 3 -1 5; P5 5 2 2 1 3 4 6; DF; DS27 100/10; LCOG; P1 6 1 1 5 1 5 -1 -1 -1 -1 6; DF; DS26 100/10; LCOG; P-1 3 3 3 4 4 3 5 1 5 1 -1 -1 -1 -1 6 3 6 5 5 5 3 3 2 -1 2; DF; DS25 100/10; LCOG; P4 -1 4 4 3 5 1 5 1 4 1 -1 -1 -1 -1 5 1 6 3 6 5 5 5 -1; P-1 3 5 3 5 2 -1 2; DF; DS24 100/10; LCOG; P3 6 3 -1 2 -1 2 6; P5 5 -1 5 -1 6 5 6; DF; DS23 100/10; LCOG; P5 6 5 0 4 -1 1 4 1 -1 -1 -1 -1 5 0 6 4 1 4 6; DF; DS22 100/10; LCOG; P0 2 1 1 3 1 4 1 4 4 3 5 1 5 1 4 1 0 -1 0 -1 5 1 6 3 6 5 5 5 0 3 -1 1 -1 -1 1; DF; DS21 100/10; LCOG; P5 1 3 -1 1 -1 -1 0 -1 5 1 6 3 6 5 5 5 4 3 5 1 5 1 4 1 1 3 1 5 2; DF; C1 ; E This CIF file can be plotted to show the use of the poly2 layer as a gate for transistors: DS1 100/10; C2 ; DF; DS2 100/10; C3 ; C4 T-110 322 ; C4 T375 322 ; C4 T-110 -124 ; C4 T375 -124 ; C5 T-109 292 ; C6 T-98 292 ; C5 T-88 292 ; C7 T-77 292 ; C8 T-66 292 ; C9 T-55 292 ; C10 T-45 292 ; C11 T-34 292 ; C5 T-23 292 ; C12 T0 292 ; C13 T12 292 ; C8 T23 292 ; C5 T33 292 ; C5 T56 292 ; C14 T67 292 ; C13 T78 292 ; C15 T89 292 ; C16 T100 292 ; C6 T110 292 ; C5 T121 292 ; C17 T144 292 ; C18 T155 292 ; C8 T162 292 ; C19 T173 292 ; C6 T196 292 ; C13 T206 292 ; C15 T217 292 ; C20 T228 292 ; C11 T238 292 ; C13 T249 292 ; C10 T272 292 ; C21 T283 292 ; C5 T294 292 ; C15 T317 292 ; C18 T327 292 ; C7 T335 292 ; C9 T346 292 ; C10 T356 292 ; C21 T367 292 ; DF; DS4 100/10; LCPG; B20 20 0 0; DF; DS21 100/10; LCPG; P7 12 7 -1 6 -1 1 8 1 -1 -1 -1 -1 12 0 12 6 3 6 12; DF; DS20 100/10; LCPG; P-1 7 5 7 6 9 6 10 5 11 1 11 1 -1 -1 -1 -1 12 5 12 7 10 7 8 5 6 -1 6; P-1 1 5 1 6 2 6 5 4 7 5 8 7 5 7 1 5 -1 -1 -1; DF; DS19 100/10; LCPG; P1 12 1 -1 -1 -1 -1 12; P7 12 7 -1 6 -1 6 12; P7 6 -1 6 -1 7 7 7; DF; DS18 100/10; LCPG; P4 -1 -1 -1 -1 1 4 1; P2 12 2 -1 1 -1 1 12; P4 11 -1 11 -1 12 4 12; DF; DS17 100/10; LCPG; P7 12 7 -1 6 -1 3 5 0 -1 -1 -1 -1 12 1 12 1 3 3 7 4 7 6 3 6 12; DF; DS16 100/10; LCPG; P-1 7 5 7 6 9 6 10 5 11 1 11 1 -1 -1 -1 -1 12 5 12 7 10 7 8 5 6 -1 6; DF; DS15 100/10; LCPG; P6 -1 6 8 4 4 3 4 1 8 1 -1 -1 -1 -1 12 0 12 3 7 6 12 7 12 7 -1; DF; DS14 100/10; LCPG; P8 12 0 -1 -1 0 6 13; P6 -1 -1 12 0 13 8 0; DF; DS13 100/10; LCPG; P6 -1 6 10 5 11 2 11 1 10 1 -1 -1 -1 -1 10 1 12 5 12 7 10 7 -1; P-1 6 7 6 7 4 -1 4; DF; DS12 100/10; LCPG; P7 9 5 11 2 11 1 10 1 2 2 1 5 1 6 2 6 6 7 6 7 1 5 -1 1 -1 -1 1 -1 10 1 12 5 12 8 10; P9 4 4 4 4 6 9 6; DF; DS11 100/10; LCPG; P-1 1 5 1 6 2 6 10 5 11 1 11 1 -1 -1 -1 -1 12 5 12 7 10 7 1 5 -1 -1 -1; DF; DS10 100/10; LCPG; P0 3 2 1 5 1 6 2 6 10 5 11 2 11 1 10 1 1 -1 1 -1 10 1 12 5 12 7 10 7 1 5 -1 1 -1 -1 2; DF; DS9 100/10; LCPG; P-1 7 5 7 6 9 6 10 5 11 1 11 1 -1 -1 -1 -1 12 5 12 7 10 7 8 5 6 -1 6; P6 -1 6 5 4 7 5 8 7 5 7 -1; DF; DS8 100/10; LCPG; P4 12 4 -1 2 -1 2 12; P7 11 -1 11 -1 12 7 12; DF; DS7 100/10; LCPG; P8 2 5 -1 1 -1 -1 1 -1 10 1 12 5 12 8 10 7 9 5 11 2 11 1 10 1 2 2 1 5 1 7 3; DF; DS6 100/10; LCPG; P1 12 1 1 7 1 7 -1 -1 -1 -1 12; DF; DS5 100/10; LCPG; P7 11 1 11 1 1 7 1 7 -1 -1 -1 -1 12 7 12; P6 6 -1 6 -1 7 6 7; DF; DS3 100/10; LCEL; B20 100 10 50; P50 0 50 60 120 60 120 90 210 90 210 50 150 50 150 0; LCPG; P140 70 140 110 270 110 270 70; LCAA; P160 -10 160 160 200 160 200 120 190 120 190 30 210 30 210 -10; C22 T190 10 ; C22 T180 140 ; LCCP; B20 20 250 90; C23 T80 30 ; C23 T120 30 ; C24 T70 103 ; C25 T75 103 ; C24 T81 103 ; C26 T86 103 ; C27 T91 103 ; C28 T96 103 ; C29 T101 103 ; C30 T106 103 ; C24 T111 103 ; C31 T100 143 ; C32 T107 143 ; C33 T113 143 ; C34 T120 143 ; C35 T124 143 ; C36 T131 143 ; C37 T220 133 ; C38 T226 133 ; C39 T231 133 ; C40 T236 133 ; LCOG; P230 130 230 100 230 130; P165 145 140 145 165 145; P90 100 90 50 90 100; P90 80 10 80 90 80; C41 T50 -26 ; C42 T54 -26 ; C43 T58 -26 ; C44 T62 -26 ; C45 T66 -26 ; C41 T70 -26 ; C44 T74 -26 ; C44 T83 -26 ; C42 T87 -26 ; C46 T95 -26 ; C47 T99 -26 ; C46 T103 -26 ; C41 T107 -26 ; C44 T111 -26 ; C48 T115 -26 ; C42 T119 -26 ; C49 T123 -26 ; C46 T127 -26 ; C50 T230 8 ; C51 T235 8 ; C52 T240 8 ; C53 T245 8 ; C54 T250 8 ; C50 T254 8 ; C53 T259 8 ; C53 T269 8 ; C51 T274 8 ; C54 T284 8 ; C50 T289 8 ; C53 T294 8 ; C55 T299 8 ; C56 T302 8 ; C57 T307 8 ; C58 T220 33 ; C59 T226 33 ; C60 T231 33 ; C61 T236 33 ; C62 T242 33 ; C58 T247 33 ; C61 T252 33 ; C61 T264 33 ; C59 T269 33 ; C63 T280 33 ; C59 T286 33 ; C64 T291 33 ; C65 T296 33 ; P80 30 80 -20 80 30; P120 30 120 -20 120 30; P225 10 190 10 225 10; P250 90 250 40 250 90; C66 T20 30 ; C66 MX T50 30 ; C67 T32 26 ; C68 T90 30 ; C68 MX T110 30 ; C69 T98 27 ; C70 T50 50 ; C70 MX T70 50 ; C69 T58 47 ; C71 T190 80 ; C71 MX T210 80 ; C69 T198 77 ; C72 T0 110 ; C72 MX T20 110 ; C69 T8 107 ; C73 T110 50 ; C73 MX T130 50 ; C69 T118 47 ; C74 T120 80 ; C74 MX T140 80 ; C69 T128 77 ; C75 T210 90 ; C75 MX T240 90 ; C67 T222 86 ; C76 T150 10 ; C76 MX T180 10 ; C67 T162 6 ; C77 R0 10000 T150 90 ; C77 MX R0 10000 T150 110 ; C69 T148 97 ; C78 R0 10000 T170 20 ; C78 MX R0 10000 T170 50 ; C67 T167 31 ; C79 ; C80 ; DF; DS78 100/10; LCPG; P-6 0 0 0 0 -4 0 4 0 0 -3 -2 -2 0 -3 2 0 0 -6 0; DF; DS77 100/10; LCPG; P-4 0 0 0 0 -3 0 3 0 0 -2 -1 -2 0 -2 1 0 0 -4 0; DF; DS76 100/10; LCPG; P-6 0 0 0 0 -4 0 4 0 0 -3 -2 -2 0 -3 2 0 0 -6 0; DF; DS75 100/10; LCPG; P-6 0 0 0 0 -4 0 4 0 0 -3 -2 -2 0 -3 2 0 0 -6 0; DF; DS74 100/10; LCPG; P-4 0 0 0 0 -3 0 3 0 0 -2 -1 -2 0 -2 1 0 0 -4 0; DF; DS73 100/10; LCPG; P-4 0 0 0 0 -3 0 3 0 0 -2 -1 -2 0 -2 1 0 0 -4 0; DF; DS72 100/10; LCPG; P-4 0 0 0 0 -3 0 3 0 0 -2 -1 -2 0 -2 1 0 0 -4 0; DF; DS71 100/10; LCPG; P-4 0 0 0 0 -3 0 3 0 0 -2 -1 -2 0 -2 1 0 0 -4 0; DF; DS70 100/10; LCPG; P-4 0 0 0 0 -3 0 3 0 0 -2 -1 -2 0 -2 1 0 0 -4 0; DF; DS68 100/10; LCPG; P-4 0 0 0 0 -3 0 3 0 0 -2 -1 -2 0 -2 1 0 0 -4 0; DF; DS66 100/10; LCPG; P-6 0 0 0 0 -4 0 4 0 0 -3 -2 -2 0 -3 2 0 0 -6 0; DF; DS23 100/10; LCCE; B20 20 0 0; DF; DS22 100/10; LCCA; B20 20 0 0; DF; DS80 100/10; C81 T292 -123 ; C82 T296 -123 ; C83 T301 -123 ; C82 T305 -123 ; C84 T-110 -3 ; C85 T-104 -3 ; C85 T-97 -3 ; C85 T-91 -3 ; C86 T-109 96 ; C87 T-103 96 ; C88 T-96 96 ; C87 T-91 96 ; DF; DS88 100/10; LCPG; P3 -1 -1 -1 -1 1 3 1; P-1 6 1 8 2 8 2 -1 1 -1 1 6 0 5; DF; DS87 100/10; LCPG; P5 7 0 -1 -1 0 4 8; P5 7 5 1 3 -1 1 -1 -1 1 -1 6 1 8 3 8 5 6 4 5 3 7 1 7 1 6 1 1 3 1 4 1 4 7; DF; DS86 100/10; LCPG; P3 6 3 1 2 1 2 6; P5 3 -1 3 -1 4 5 4; DF; DS85 100/10; LCPG; P4 7 0 -1 -1 0 4 7; P4 6 4 1 3 0 1 0 0 1 0 6 1 7 3 7 4 6 4 5 3 6 1 6 0 5 0 1 1 0 3 0 3 1 3 6; DF; DS84 100/10; LCPG; P2 5 2 0 1 0 1 5; P4 2 0 2 0 3 4 3; DF; DS83 100/10; LCPG; P0 3 2 3 3 2 3 0 2 0 0 0 0 1 1 0 2 0 2 1 2 2 0 2; P0 4 0 5 2 5 3 4 3 3 2 2 1 2 2 3 2 4 1 4 0 3; DF; DS82 100/10; LCPG; P3 4 0 0 2 5; P3 4 3 0 2 0 0 0 0 4 0 5 2 5 3 4 2 3 2 4 1 4 0 4 0 1 1 0 2 0 2 1 2 4; DF; DS81 100/10; LCPG; P2 3 2 0 1 0 1 3; P3 2 0 2 3 2; DF; DS79 100/10; C89 T10 -74 ; C89 T10 207 ; C90 T20 -74 ; C90 T20 207 ; C91 T30 -74 ; C91 T30 207 ; C92 T40 -74 ; C92 T40 207 ; C93 T50 -74 ; C93 T50 207 ; C94 T60 -74 ; C94 T60 207 ; C95 T70 -74 ; C95 T70 207 ; C96 T80 -74 ; C96 T80 207 ; C97 T90 -74 ; C97 T90 207 ; C98 T100 -74 ; C98 T100 207 ; C99 T110 -74 ; C99 T110 207 ; C100 T120 -74 ; C100 T120 207 ; C101 T130 -74 ; C101 T130 207 ; C102 T140 -74 ; C102 T140 207 ; C103 T150 -74 ; C103 T150 207 ; C104 T160 -74 ; C104 T160 207 ; C105 T170 -74 ; C105 T170 207 ; C106 T180 -74 ; C106 T180 207 ; C107 T190 -74 ; C107 T190 207 ; C108 T200 -74 ; C108 T200 207 ; C109 T210 -74 ; C109 T210 207 ; C110 T220 -74 ; C110 T220 207 ; C111 T230 -74 ; C111 T230 207 ; C112 T240 -74 ; C112 T240 207 ; C113 T250 -74 ; C113 T250 207 ; C114 T260 -74 ; C114 T260 207 ; C115 T270 -74 ; C115 T270 207 ; C116 T280 -74 ; C116 T280 207 ; C117 T290 -74 ; C117 T290 207 ; C118 T300 -74 ; C118 T300 207 ; C119 T-51 -10 ; C119 T357 -10 ; C120 T-51 0 ; C120 T357 0 ; C121 T-51 10 ; C121 T357 10 ; C122 T-51 20 ; C122 T357 20 ; C123 T-51 30 ; C123 T357 30 ; C124 T-51 40 ; C124 T357 40 ; C125 T-51 50 ; C125 T357 50 ; C126 T-51 60 ; C126 T357 60 ; C127 T-51 70 ; C127 T357 70 ; C128 T-51 80 ; C128 T357 80 ; C129 T-51 90 ; C129 T357 90 ; C130 T-51 100 ; C130 T357 100 ; C131 T-51 110 ; C131 T357 110 ; C132 T-51 120 ; C132 T357 120 ; C133 T-51 130 ; C133 T357 130 ; C134 T-51 140 ; C134 T357 140 ; C135 T-51 150 ; C135 T357 150 ; DF; DS135 100/10; LCPG; P12 0 -12 0 12 0; DF; DS134 100/10; LCPG; P12 0 -12 0 12 0; DF; DS133 100/10; LCPG; P12 0 -12 0 12 0; DF; DS132 100/10; LCPG; P12 0 -12 0 12 0; DF; DS131 100/10; LCPG; P12 0 -12 0 12 0; DF; DS130 100/10; LCPG; P18 0 -18 0 18 0; DF; DS129 100/10; LCPG; P12 0 -12 0 12 0; DF; DS128 100/10; LCPG; P12 0 -12 0 12 0; DF; DS127 100/10; LCPG; P12 0 -12 0 12 0; DF; DS126 100/10; LCPG; P12 0 -12 0 12 0; DF; DS125 100/10; LCPG; P12 0 -12 0 12 0; DF; DS124 100/10; LCPG; P12 0 -12 0 12 0; DF; DS123 100/10; LCPG; P12 0 -12 0 12 0; DF; DS122 100/10; LCPG; P12 0 -12 0 12 0; DF; DS121 100/10; LCPG; P12 0 -12 0 12 0; DF; DS120 100/10; LCPG; P18 0 -18 0 18 0; DF; DS119 100/10; LCPG; P12 0 -12 0 12 0; DF; DS118 100/10; LCPG; P0 18 0 -18 0 18; DF; DS117 100/10; LCPG; P0 12 0 -12 0 12; DF; DS116 100/10; LCPG; P0 12 0 -12 0 12; DF; DS115 100/10; LCPG; P0 12 0 -12 0 12; DF; DS114 100/10; LCPG; P0 12 0 -12 0 12; DF; DS113 100/10; LCPG; P0 12 0 -12 0 12; DF; DS112 100/10; LCPG; P0 12 0 -12 0 12; DF; DS111 100/10; LCPG; P0 12 0 -12 0 12; DF; DS110 100/10; LCPG; P0 12 0 -12 0 12; DF; DS109 100/10; LCPG; P0 12 0 -12 0 12; DF; DS108 100/10; LCPG; P0 18 0 -18 0 18; DF; DS107 100/10; LCPG; P0 12 0 -12 0 12; DF; DS106 100/10; LCPG; P0 12 0 -12 0 12; DF; DS105 100/10; LCPG; P0 12 0 -12 0 12; DF; DS104 100/10; LCPG; P0 12 0 -12 0 12; DF; DS103 100/10; LCPG; P0 12 0 -12 0 12; DF; DS102 100/10; LCPG; P0 12 0 -12 0 12; DF; DS101 100/10; LCPG; P0 12 0 -12 0 12; DF; DS100 100/10; LCPG; P0 12 0 -12 0 12; DF; DS99 100/10; LCPG; P0 12 0 -12 0 12; DF; DS98 100/10; LCPG; P0 18 0 -18 0 18; DF; DS97 100/10; LCPG; P0 12 0 -12 0 12; DF; DS96 100/10; LCPG; P0 12 0 -12 0 12; DF; DS95 100/10; LCPG; P0 12 0 -12 0 12; DF; DS94 100/10; LCPG; P0 12 0 -12 0 12; DF; DS93 100/10; LCPG; P0 12 0 -12 0 12; DF; DS92 100/10; LCPG; P0 12 0 -12 0 12; DF; DS91 100/10; LCPG; P0 12 0 -12 0 12; DF; DS90 100/10; LCPG; P0 12 0 -12 0 12; DF; DS89 100/10; LCPG; P0 12 0 -12 0 12; DF; DS69 100/10; LCPG; P5 0 -1 0 -1 1 4 3 4 4 3 5 1 5 0 4 -1 5 1 6 4 6 5 5 5 3 1 1 1 0 5 0; DF; DS67 100/10; LCPG; P1 5 6 5 8 4 8 1 6 -1 1 -1 -1 1 0 2 2 1 5 1 6 1 6 3 5 4 1 4; P-1 7 1 8 6 8 8 7 8 5 5 4 4 5 6 6 6 7 5 7 2 7 0 6; DF; DS65 100/10; LCOG; P0 4 2 2 2 0 1 0 1 2 -1 4; P4 4 2 2 1 2 3 4; DF; DS64 100/10; LCOG; P0 4 0 0 4 0 0 0 0 4; DF; DS63 100/10; LCOG; P0 3 2 3 3 3 2 3 0 3 0 0 0 4 3 4 4 3 4 2 3 2 0 2; DF; DS62 100/10; LCOG; P3 0 3 3 2 3 1 3 0 3 0 0 0 3 1 4 3 4 4 3 4 0; P0 2 4 2 4 1 0 1; DF; DS61 100/10; LCOG; P2 4 2 0 1 0 1 4; P4 3 0 3 0 4 4 4; DF; DS60 100/10; LCOG; P4 4 4 0 3 0 0 3 0 0 0 4 3 1 3 4; DF; DS59 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 3 1 3 0 3 0 0 0 3 1 4 3 4 4 3 4 0 3 0 1 0 -1 0; DF; DS58 100/10; LCOG; P4 0 3 0 1 0 0 0 0 3 1 4 3 4 4 3 3 3 2 3 1 3 0 3 0 1 1 0 2 0 3 1; DF; DS57 100/10; LCOG; P3 3 0 3 0 0 3 0 0 0 0 4 3 4; P3 2 0 2 3 2; DF; DS56 100/10; LCOG; P3 4 2 0 1 0 0 4 1 1 3 4; DF; DS55 100/10; LCOG; P2 0 0 0 2 0; P1 4 1 0 0 0 0 4; P2 3 0 3 0 4 2 4; DF; DS54 100/10; LCOG; P3 0 3 3 2 3 1 3 0 3 0 0 0 3 1 4 2 4 3 3 3 0; P0 2 3 2 3 1 0 1; DF; DS53 100/10; LCOG; P2 4 2 0 1 0 1 4; P3 3 0 3 0 4 3 4; DF; DS52 100/10; LCOG; P3 4 3 0 0 2 0 0 0 4 3 1 3 4; DF; DS51 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 3 1 3 0 3 0 0 0 3 1 4 2 4 3 3 3 0 2 0 1 0 -1 0; DF; DS50 100/10; LCOG; P3 0 2 0 1 0 0 0 0 3 1 4 2 4 3 3 3 2 2 3 1 3 0 3 0 1 1 0 2 0 3 1; DF; DS49 100/10; LCOG; P0 0 2 0 2 1 2 2 2 3 0 3 0 0 0 3 2 3 3 3 3 0 2 0 0 0; DF; DS48 100/10; LCOG; P0 2 2 2 2 3 0 3 0 0 0 3 2 3 3 3 3 2 2 1 0 1; P2 0 2 1 1 2 2 2 3 1 3 0; DF; DS47 100/10; LCOG; P0 3 0 0 3 0 0 0 0 3; DF; DS46 100/10; LCOG; P3 3 0 3 0 0 3 0 0 0 0 3 3 3; P2 1 0 1 0 2 2 2; DF; DS45 100/10; LCOG; P2 0 2 2 2 3 1 3 0 2 0 0 0 3 1 3 2 3 3 3 3 0; P0 2 3 2 3 1 0 1; DF; DS44 100/10; LCOG; P2 3 2 0 1 0 1 3; P3 3 0 3 3 3; DF; DS43 100/10; LCOG; P3 3 3 0 2 0 0 2 0 0 0 3 2 1 2 3; DF; DS42 100/10; LCOG; P0 1 1 0 2 0 2 1 2 2 2 3 1 3 0 2 0 0 0 3 1 3 2 3 3 3 3 0 2 0 1 0 0 0; DF; DS41 100/10; LCOG; P3 0 2 0 1 0 0 0 0 3 1 3 2 3 3 2 2 3 1 3 0 2 0 1 1 0 2 0 3 1; DF; DS40 100/10; LCOG; P0 4 2 2 2 0 1 0 1 2 -1 4; P4 4 2 2 1 2 3 4; DF; DS39 100/10; LCOG; P0 4 0 0 4 0 0 0 0 4; DF; DS38 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 3 1 3 0 3 0 0 0 3 1 4 3 4 4 3 4 0 3 0 1 0 -1 0; DF; DS37 100/10; LCOG; P0 3 2 3 3 3 2 3 0 3 0 0 0 4 3 4 4 3 4 2 3 2 0 2; DF; DS36 100/10; LCOG; P4 4 0 4 0 0 4 0 0 0 0 5 4 5; P3 2 0 2 0 3 3 3; DF; DS35 100/10; LCOG; P5 5 2 0 -1 5 0 5 2 1 4 5; DF; DS34 100/10; LCOG; P2 0 0 0 2 0; P1 5 1 0 0 0 0 5; P2 4 0 4 0 5 2 5; DF; DS33 100/10; LCOG; P2 5 2 0 1 0 1 5; P4 4 0 4 0 5 4 5; DF; DS32 100/10; LCOG; P5 1 3 0 1 0 0 0 0 4 1 5 3 5 5 4 4 3 3 4 1 4 0 4 0 1 1 0 3 0 4 1; DF; DS31 100/10; LCOG; P3 0 3 4 1 4 0 4 0 0 0 4 1 5 3 5 4 4 4 0; P0 2 4 2 4 1 0 1; DF; DS30 100/10; LCOG; P0 0 2 0 3 1 3 3 2 3 0 3 0 0 0 4 2 4 4 3 4 0 2 0 0 0; DF; DS29 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 3 1 3 0 3 0 0 0 3 1 4 2 4 4 3 4 0 2 0 1 0 -1 0; DF; DS28 100/10; LCOG; P0 2 2 2 3 3 2 3 0 3 0 0 0 4 2 4 4 3 4 2 2 2 0 2; P3 0 3 1 2 2 2 3 4 2 4 0; DF; DS27 100/10; LCOG; P2 4 2 0 1 0 1 4; P4 3 0 3 0 4 4 4; DF; DS26 100/10; LCOG; P4 0 2 0 1 0 0 0 0 3 1 4 2 4 4 3 3 3 2 3 1 3 0 3 0 1 1 0 2 0 3 1; DF; DS25 100/10; LCOG; P0 4 0 0 4 0 0 0 0 4; DF; DS24 100/10; LCOG; P4 3 0 3 0 0 4 0 0 0 0 4 4 4; P3 2 0 2 3 2; DF; C1 ; E Message 29 -- ************************ 11-Jan-89 04:39:47-PST,1959;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Wed, 11 Jan 89 04:39:38 PST Posted-Date: 10-JAN-1989 19:30:11 Message-Id: <8901111238.AA21062@vlsif.isi.edu> Received: by vlsif.isi.edu (5.54/5.51) id AA21062; Wed, 11 Jan 89 04:38:41 Date: 10-JAN-1989 19:30:11 From: XMOSIS@cheeta.isi.edu Subject: NEW MOSIS DOCUMENTS To: mosis-bboard@cheeta.isi.edu Reply-To: vlsi.attn@a.isi.edu Tuesday, January 10, 1989 Files created in the past 30 days: ANNOUNCEMENTS.INF 199868 5-Jan-89 15:32:32 CHAPT13.DOC 115412 3-Jan-89 7:55:15 M89S.BSIM_PRM 2732 19-Dec-88 15:42:02 M89S.PRM 5544 19-Dec-88 15:42:01 M89S.STS 842 20-Dec-88 11:05:37 M89T.STS 856 15-Dec-88 14:24:32 M8AW.BSIM_PRM 2746 21-Dec-88 7:14:26 M8AW.PRM 7852 21-Dec-88 7:14:25 M8AW.STS 860 28-Dec-88 9:17:23 M8AX.BSIM_PRM 2730 9-Jan-89 13:40:42 M8AX.PRM 5458 9-Jan-89 13:40:41 M8AX.STS 842 9-Jan-89 21:39:26 M8BA.STS 888 13-Dec-88 17:54:00 M8BB.STS 874 9-Jan-89 21:38:10 M8BY.BSIM_PRM 2738 20-Dec-88 15:25:25 M8BY.PRM 7804 20-Dec-88 15:25:24 M8BY.STS 856 23-Dec-88 10:30:46 M8BZ.PRM 5048 3-Jan-89 8:59:41 M8BZ.STS 840 3-Jan-89 17:17:12 M8CC.STS 888 28-Dec-88 9:25:28 M8CD.STS 868 28-Dec-88 11:45:29 M8CF.STS 886 5-Jan-89 16:07:16 M8CG.STS 892 5-Jan-89 8:04:03 M8CH.STS 896 3-Jan-89 17:40:38 PRICE_SCHED.INF 11580 15-Dec-88 11:12:06 SCN16_HP_BSIM.INF 544 6-Jan-89 12:33:43 TEMPLATES.INF 17550 3-Jan-89 7:51:03 TINYCHIP.INF 6292 15-Dec-88 10:40:14 [] Message 28 -- ************************ 6-Jan-89 09:56:40-PST,1592;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Fri, 6 Jan 89 09:55:50 PST Posted-Date: 5-JAN-1989 18:15:45 Message-Id: <8901061754.AA11166@vlsif.isi.edu> Received: by vlsif.isi.edu (5.54/5.51) id AA11166; Fri, 6 Jan 89 09:54:48 Date: 5-JAN-1989 18:15:45 From: XMOSIS@cheeta.isi.edu Subject: THREE MICRON RUN DELAYED To: mosis-bboard@cheeta.isi.edu Reply-To: FRY@cheeta.isi.edu Dear MOSIS Users: MOSIS is postponing the 3 micron CMOS run scheduled for January 5 (today) because of the small number of projects in the fabrication queue. We're hoping more designs will come in over the next few days. The run is now scheduled for Tuesday, January 10 at 7:00 a.m. We will accept projects that are received AND PROCESSED BY MOSIS before then. Because more of our designers are transitioning from 3 to 2 microns, we will be scheduling 3 micron runs farther apart in the future and possibly phasing them out completely. It's a good time to consider designing in 2 micron CMOS. - The quality of 2 micron fabrication has been very good - Average 2 micron turnaround since July has been 7.9 weeks - TinyChips are available on all 2 micron runs - Stuff and unstuffed frames are available for 2 micron N-well projects (they will be available for P-well projects within six months) We want to hear from you! If phasing out 3 micron CMOS would cause you serious problems please send a network message to Kathie Fry at within the next two weeks. Message 27 -- ************************ 15-Dec-88 03:46:06-PST,1687;000000000000 Return-path: Received: from vlsif.isi.edu by Cheeta.ISI.Edu with INTERNET ; Thu, 15 Dec 88 03:45:59 PST Posted-Date: 14-DEC-1988 22:22:49 Message-Id: <8812151146.AA14968@vlsif.isi.edu> Received: by vlsif.isi.edu (5.54/5.51) id AA14968; Thu, 15 Dec 88 03:46:26 Date: 14-DEC-1988 22:22:49 From: XMOSIS@cheeta.isi.edu Subject: CHANGE IN SUBSTRATE POLICY To: mosis-bboard@cheeta.isi.edu Reply-To: vas@vlsi-cad.isi.edu CHANGE IN SUBSTRATE POLICY EFFECTIVE JANUARY 1, 1989: To facilitate use of the SCE technology, NO SUBSTRATE will be the default for projects which use MOSIS Standard Frames. The ONLY EXCEPTION is that all projects using 84PGA's have substrate connections at pin #10. The substrate on 84PGA's is internal to the package and cannot be changed. Substrates may be requested for NON-TinyChip projects by including "OPTION: SUBSTRATE" in your NEW-PROJECT request. When you include the "OPTION: SUBSTRATE" option, MOSIS will place the substrate at pin #1. Please recall that the "OPTION: SUBSTRATE" parameter does not apply to 84PGA's or TinyChips. The MOSIS Service December, 1988 Message 26 -- ************************ 9-Dec-88 02:30:24-PST,11839;000000000000 Return-path: Date: Fri 9 Dec 88 00:10:25-PDT From: MOSIS AGENT Subject: NEW PRICE SCHEDULES To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vas@vlsi-cad.isi.edu Message-ID: <597658225.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: Dear MOSIS User: Here are the MOSIS prices for July 1, 1988 through June 30, 1989. PRICE SCHEDULE A: To be used if your organization is submitting a purchase order to MOSIS. PRICE SCHEDULE B: To be used if your account is sponsored by DARPA or NSF (no purchase order involved). If you have any questions about these prices please contact Kathleen Fry at or (213) 822-1511. Please Note: The information after Price Schedule B pertains to BOTH price schedules and contains information on project size, assembly, additional parts and production orders. PRICE SCHEDULE A FOR ORGANIZATIONS SUBMITTING PURCHASE ORDERS TO MOSIS (prices valid through June 30, 1989.) (REGULARLY-SCHEDULED RUNS)* ------------------------------------------------------------------------------ | TECHNOLOGY MAXIMUM PROJECT MINIMUM TOTAL ADDITIONAL | | SIZE (MM) QUANTITIES PRICE PARTS | ------------------------------------------------------------------------------ | PRICED PER PROJECT: | | | | CMOS 2.3 x 3.4** 4 $ 400 N/A | | 3.0um 4.6 x 6.8 12 $ 2,200 $ 960 (6 parts)| | 6.9 x 6.8 18 $ 5,000 $ 1,440 | | 7.9 x 9.2 24 $ 10,000 $ 2,160 | | | | CMOS 2.22 x 2.25** 4 $ 400 N/A | | 2.0um 4.6 x 6.8 12 $ 2,500 $ 1,440 (8 parts)| | 6.9 x 6.8 24 $ 5,900 $ 1,760 | | 7.9 x 9.2 32 $ 11,800 $ 2,560 | ------------------------------------------------------------------------------ (ON-DEMAND RUNS)* ------------------------------------------------------------------------------ | PRICE PER MINIMUM PACKAGING PACKAGING | | TECHNOLOGY SQ MM LOT COST / LOT COST / PART| ------------------------------------------------------------------------------ | PRICED PER SQUARE MILLIMETER: | | | | CMOS | | 1.6um $ 520 50 $2,000 $40 | | | | 1.2um $ 750 50 $2,000 $40 | | | | PLEASE DO YOUR 1.6UM AND 1.2UM PROJECT AREA CALCULATON IN MICRONS, | | converting the result into square millimeters which you have carried out | | to three decimal places. The price should be rounded to the nearest | | dollar. | | | | Sample cost calculation for purchasing 50 packaged 1.6 micron parts: | | | | (4286um) * (2189um) = 9.382 sq mm; [(9.382 sq mm) * ($520/sq mm)] + | | $2,000 = $6,879. | | | | A TINYCHIP PAD FRAME with preset pad locations is available for the 1.6 | | micron TinyChip die size; the 1.2 micron size is in development. The | | TinyChip die size for both 1.6 and 1.2 micron is 2.24 x 2.25 millimeters. | | | ------------------------------------------------------------------------------ *See Fabrication Schedule **These are TinyChips and certain restrictions apply. See Fabrication Schedule for Details. PLACING AN ORDER: (Price Schedule A) The first time you place an order with MOSIS, please fill out two copies of our customer agreement (copies available from MOSIS). BOTH copies of the agreement should be signed by your authorized representative and returned to us. We will sign them and return one signed original to you. MOSIS must have a purchase order before proceeding with fabrication. Please send the purchase order to: KATHLEEN FRY, THE MOSIS SERVICE, USC/ INFORMATION SCIENCES INSTITUTE, 4676 ADMIRALTY WAY, MARINA DEL REY, CA 90292-6695. Tapes should also be sent to this address. Payment terms are net 30 days. Pricing includes shipping costs but not sales tax. Parts will be sent to the shipping address listed on the purchase order so please make sure this address is correct. A 20% price discount is available to educational institutions. This discount is also available if your project is part of work performed under a current government contract. To receive the government contract discount, please include the following information on your purchase order: 1) Contract Number, 2) Funding Agency, 3) Program Manager, 4) Contract Expiration Date. PLEASE NOTE: DISCOUNTS ARE NOT AVAILABLE FOR TINYCHIPs, 1.6 OR 1.2 MICRON TECHNOLOGIES. MOSIS accepts designs in CIF, GDS II and MEBES format. You may send your layout geometry by electronic mail (instructions are outlined in the MOSIS User Manual) or on a magnetic tape via regular mail. Magnetic tapes must be accompanied by a completed MOSIS Project Submission Form (available from MOSIS). TAPES AND ACCOMPANYING PAPERWORK MUST BE SENT TO KATHLEEN FRY. PRICE SCHEDULE B TO BE USED FOR NSF AND DARPA SPONSORED ACCOUNTS IF NO PURCHASE ORDER IS INVOLVED (prices valid through June 30, 1989) (REGULARLY-SCHEDULED RUNS)* ------------------------------------------------------------------------------ | TECHNOLOGY MAXIMUM PROJECT MINIMUM TOTAL ADDITIONAL | | SIZE (MM) QUANTITIES PRICE PARTS | -----------------------------------------------------------------------------| | PRICED PER-PROJECT: | | | | CMOS 2.3 x 3.4** 4 $ 400 N/A | | 3.0um 4.6 x 6.8 12 $ 1,400 $ 720 (6 parts)| | 6.9 x 6.8 18 $ 3,000 $ 1,020 | | 7.9 x 9.2 24 $ 6,000 $ 1,500 | | | | CMOS 2.22 x 2.25** 4 $ 400 N/A | | 2.0um 4.6 x 6.8 12 $ 1,600 $ 1,120 (8 parts)| | 6.9 x 6.8 24 $ 3,800 $ 1,280 | | 7.9 x 9.2 32 $ 7,600 $ 1,920 | ------------------------------------------------------------------------------ (ON-DEMAND RUNS)* ------------------------------------------------------------------------------ | PRICE PER MINIMUM PACKAGING PACKAGING | | TECHNOLOGY SQ MM LOT COST / LOT COST / PART| ------------------------------------------------------------------------------ | PRICED PER-SQUARE MILLIMETER: | | | | CMOS | | 1.6um $ 450 50 $2,000 $40 | | | | 1.2um $ 720 50 $2,000 $40 | | | | PLEASE DO YOUR 1.6UM AND 1.2UM PROJECT AREA CALCULATON IN MICRONS, | | converting the result into square millimeters which you have carried out | | to three decimal places. The price should be rounded to the nearest dollar.| | | | Sample cost calculation for purchasing 50 1.6 micron packaged parts: | | | | (4286um) * (2189um) = 9.382 sq mm; [(9.382 sq mm) * ($520/sq mm)] + | | $2,000 = $6,879. | | A TINYCHIP PAD FRAME with preset pad locations is available for the 1.6 | | micron TinyChip die size; the 1.2 micron size is in development. The | | TinyChip die size for both 1.6 and 1.2 micron is 2.24 x 2.25 millimeters. | | | ------------------------------------------------------------------------------ **These are TinyChips and certain restrictions apply. See Fabrication Schedule for details. PLACING AN ORDER: (Price Schedule B) If your MOSIS account is sponsored by DARPA or NSF your designs must be sent to MOSIS over electronic mail. If you wish to send tapes this must be authorized in advance by DARPA or NSF. Tapes must be accompanied by a completed MOSIS Project Submission Form (available from MOSIS). TAPES AND ACCOMPANYING PAPERWORK ARE TO BE SENT TO KATHLEEN FRY. THIS INFORMATION APPLIES TO BOTH PRICE SCHEDULES PROJECT SIZE: MOSIS will add scribe lanes and other overhead to the submitted geometry for all technologies. The maximum project sizes listed for 2.0 and 3.0 micron CMOS TinyChip refer to actual design area. ASSEMBLY: Circuits will either be bonded per your instructions or MOSIS will provide a diagram showing how bonding was done. Lids will be taped unless you request hermetic sealing. 3.0 AND 2.0 MICRON TECHNOLOGIES: The total price for these projects includes packaging. You may request unpackaged parts or provide your own packages, however the price does not change for these options. 1.6 and 1.2 MICRON TECHNOLOGIES: The price per square millimeter for these projects does NOT include packaging. Packaging is available at $40 per packaged part. If you supply your own packages, there is a charge of $25 per packaged part and you must provide MOSIS with package lids and a bonding diagram. These must be received prior to fabrication. SPECIAL PACKAGING FOR 1.6 and 1.2 MICRON PROJECTS: If the pin count or performance of the packages stocked by MOSIS is inadequate for your application, please send a note to Wes Hansford in an ATTENTION message. This note should specify your special requirements. Our 1.6/1.2 micron fabricator stocks a large variety of characterized packages for their internal high performance and high pin-out applications. ADDITIONAL PARTS AND PRODUCTION ORDERS: If you wish to order more than the minimum quantity of 2.0 or 3.0 micron CMOS parts, please request the desired additional parts in your initial order. These extra parts must be ordered, and are priced, in increments of six (for CMOS 3.0um) and eight (for CMOS 2.0um). To place an order for an entire wafer lot of a single die type, send a note to Cesar Pina in an ATTENTION message. Be sure to include all specifications since these jobs will be quoted an individual basis. ADDITIONAL INFORMATION: For further information, contact the following MOSIS staff at (213) 822-1511 or by network mail. Order Information: Kathleen Fry FRY@MOSIS.EDU General Information: Sam Delatorre DELATORRE@MOSIS.EDU Documentation Requests: Christine Tomovich TOMOVICH@MOSIS.EDU ------- Message 25 -- ************************ 8-Dec-88 13:48:09-PST,8570;000000000000 Return-path: Date: Thu 8 Dec 88 09:59:07-PDT From: MOSIS AGENT Subject: NEW FABRICATION SCHEDULE To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vas@vlsi-cad.isi.edu Message-ID: <597607147.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: The MOSIS Service Fabrication Schedule (February, 1988 - June, 1989) ======================================================================== DATE CLOSED CODE FEATURE SIZE TECHNOLOGY ======================================================================== ------------------------------------------------------------------------ THU: DEC 1 D 2.0u CMOS N-WELL THU: DEC 8 A 3.0u CMOS P-WELL THU: DEC 15 C 2.0u CMOS P-WELL DOUBLE POLY THU: DEC 22 THU: DEC 29 D 2.0u CMOS N-WELL ------------------------------------------------------------------------ THU: JAN 5 A 3.0u CMOS P-WELL THU: JAN 12 C 2.0u CMOS P-WELL DOUBLE POLY THU: JAN 19 THU: JAN 26 D 2.0u CMOS N-WELL ------------------------------------------------------------------------ THU: FEB 2 A 3.0u CMOS P-WELL THU: FEB 9 C 2.0u CMOS P-WELL DOUBLE POLY THU: FEB 16 THU: FEB 23 D 2.0u CMOS N-WELL ------------------------------------------------------------------------ THU: MAR 2 A 3.0u CMOS P-WELL THU: MAR 9 C 2.0u CMOS P-WELL DOUBLE POLY THU: MAR 16 THU: MAR 23 D 2.0u CMOS N-WELL THU: MAR 30 ------------------------------------------------------------------------ THU: APR 6 C 2.0u CMOS P-WELL DOUBLE POLY THU: APR 13 A 3.0u CMOS P-WELL THU: APR 20 D 2.0u CMOS N-WELL THU: APR 27 ------------------------------------------------------------------------ THU: MAY 4 C 2.0u CMOS P-WELL DOUBLE POLY THU: MAY 11 A 3.0u CMOS P-WELL THU: MAY 18 D 2.0u CMOS N-WELL THU: MAY 25 ------------------------------------------------------------------------ THU: JUN 1 C 2.0u CMOS P-WELL DOUBLE POLY THU: JUN 8 THU: JUN 15 D 2.0u CMOS N-WELL THU: JUN 22 A 3.0u CMOS P-WELL THU: JUN 29 C 2.0u CMOS P-WELL DOUBLE POLY ------------------------------------------------------------------------ PLEASE NOTE: TINYCHIPS may be submitted to all runs on this schedule. 2.0 MICRON DOUBLE POLY RUNS support both double and single poly designs. SCHEDULE CHANGES: MOSIS will make every attempt to keep this schedule, however, changes may be unavoidable. For schedule confirmation, send a message to MOSIS@MOSIS.EDU with the following text: REQUEST: INFORMATION TOPIC: SCHEDULE REQUEST: END TO PARTICIPATE IN ON-DEMAND 1.6 and 1.2 RETICLE-BASED RUNS: MOSIS 1.2 micron N-well (lambda=0.6 microns) and 1.6 micron N-well runs (lambda=0.8 microns) are initiated on-demand, which means that MOSIS will start a run only after enough projects have been received to fill the run. The following rules make it possible for MOSIS to combine designs of different sizes, from different organizations onto a 5X reticle set which defines a 14 x 14 mm die. 1. SPACE ON 1.2U AND 1.6U RUNS MUST BE RESERVED. This can be done by sending a note to Terri Lewis in an ATTENTION message. The message should indicate: A. your desire to get on either a 1.6 or 1.2 micron run; B. the width and height in millimeters of the space you would like to reserve; C. an estimate of the date you will submit your project. 2. MOSIS WILL SCHEDULE YOUR RUN when enough reservations have been received. We will contact you at that time to confirm your project size and give you the run closing date. 3. MOSIS WILL CHARGE YOU OR YOUR SPONSOR when the run is scheduled. There will be no refunds once the final negotiations are complete and your run has been scheduled. PRODUCTION ORDERS: To place an order for an entire wafer lot of a single die type, contact Cesar Pina at (213) 822-1511, or via an ATTENTION message. If you are sending a message, be sure to include all specifications since these jobs will be quoted on an individual basis. PROJECT SUBMISSION: Geometry sent via electronic mail must be received and accepted by MOSIS before 7:00 a.m. on the day the run closes. Geometry on magnetic tape must be received and accepted by MOSIS at least 48 hours before the run closes. Please allow plenty of time when you submit a project; MOSIS cannot delay a run to wait for late designs. ONLINE USERS: Please check the following 'TABLE OF TECHNOLOGY CODES' for the MOSIS technologies that are acceptable on a given run. For TinyChip submissions, you MUST use a "TINY" technology, e.g., "TINY-SCP". You must also put in a 'STD-FRAME' request for the MOSIS 28PC23x34 Standard Frame (for 3.0um TinyChip), or 40PC22X22 (for 2.0um TinyChip). Standard Frames, which have bonding pads at specific locations, are required if you desire TinyChip packaged parts. To request unpackaged parts, make sure to include the parameter 'PADS: 0' in your new project request. TABLE OF TECHNOLOGY CODES ======================================================== CODE MOSIS DESIGN TECHNOLOGIES LAMBDA ======================================================== A CBPM none SCP 1.5u SCG 1.5u SCE 1.5u --------------------------------------------------- B CBPE none (none scheduled) CBP none --------------------------------------------------- C SCP 1.0u SCG 1.0u SCE 1.0u SCPE 1.0u SCGE 1.0u SCEE 1.0u --------------------------------------------------- D SCN 1.0u SCG 1.0u SCE 1.0u -------------------------------------------------- E SCN 0.8u (on-demand) SCG 0.8u SCE 0.8u -------------------------------------------------- F SCN 0.6u (on-demand) SCG 0.6u SCE 0.6u ======================================================== TECHNOLOGY DESCRIPTIONS 3 Micron CMOS ------------------------------------------------------------------------- CBPM: CMOS/Bulk P-well (double metal) FEATURE SIZE: 3 microns only LAMBDA: none REFERENCES: MOSIS 3 Micron P-well CMOS Design Rules, November 1985 (Revision 2) CMOS3 Cell Library, May 1986, (Release 6.1); NOTE: The CMOS3 Cell Library is for CBPM only. Scalable CMOS -------------------------------------------------------------------------- SCP: Scalable CMOS, P-well SCN: Scalable CMOS, N-well SCG: Scalable CMOS, Generic Well SCE: Scalable CMOS, Either Well SCPE: Scalable CMOS, P-well double poly SCNE: Scalable CMOS, N-well double poly SCGE: Scalable CMOS, Generic Well, double poly SCEE: Scalable CMOS, Either Well, double poly FEATURE SIZE: 1.2 to 3.0 microns LAMBDA: .6 to 1.5 microns REFERENCE: MOSIS Scalable and Generic CMOS Design Rules, February, 1988 (Revision 6) CMOSN Cell Library Scalable 2.0 and 1.2 Micron CMOS/Bulk Cell Library (Release 1.0) FS112988 ------- Message 24 -- ************************ 7-Dec-88 16:26:16-PST,2078;000000000000 Return-path: Date: 6-DEC-1988 14:02:51 From: XMOSIS@CHEETA.ISI.EDU Subject: NEW MOSIS DOCUMENTS To: MOSIS-ANNOUNCEMENTS-LIST:; To: mosis-bboard@CHEETA.ISI.EDU Tuesday, December 6, 1988 Files created in the past 30 days: ERROR.STS 0 21-Nov-88 13:59:20 LIBINF.DOC 8854 22-Nov-88 21:44:17 M88G.PRM 7892 5-Dec-88 15:58:33 M88H.STS 860 7-Nov-88 8:59:19 M88K.STS 856 9-Nov-88 9:56:47 M88L.BSIM_PRM 2614 8-Nov-88 8:23:26 M88L.PRM 6556 8-Nov-88 8:23:25 M88L.STS 860 30-Nov-88 8:52:57 M88N.BSIM_PRM 2609 11-Nov-88 13:34:03 M88N.PRM 6542 11-Nov-88 13:34:02 M88N.STS 842 23-Nov-88 14:57:03 M89O.PRM 5036 8-Nov-88 8:24:16 M89O.STS 858 28-Nov-88 10:35:23 M89R.BSIM_PRM 2623 9-Nov-88 10:27:09 M89R.PRM 7334 9-Nov-88 10:27:08 M89R.STS 860 30-Nov-88 8:54:20 M89S.STS 870 14-Nov-88 11:13:13 M89T.BSIM_PRM 2616 22-Nov-88 7:32:58 M89T.PRM 6558 22-Nov-88 8:14:29 M89T.STS 856 1-Dec-88 9:05:38 M8AU.BSIM_PRM 2624 22-Nov-88 7:32:04 M8AU.PRM 7810 22-Nov-88 7:32:03 M8AU.STS 856 1-Dec-88 9:08:18 M8AV.PRM 5040 5-Dec-88 9:53:30 M8AV.STS 856 29-Nov-88 11:16:52 M8AW.STS 896 7-Nov-88 9:17:47 M8AX.STS 874 21-Nov-88 13:45:34 M8BA.STS 896 23-Nov-88 17:21:16 M8BB.STS 888 5-Dec-88 9:24:27 M8BY.STS 892 9-Nov-88 11:17:31 M8BZ.STS 872 14-Nov-88 11:47:25 SCMOS.TECH 86298 11-Nov-88 13:00:27 SCN20_VTI_SPECS.INF 5682 15-Nov-88 11:45:51 SCPE20_ORBIT_SPICE.INF 1180 5-Dec-88 15:52:51 VENDOR_SPICE.INF 792 10-Nov-88 20:19:47 [] Message 23 -- ************************ 23-Nov-88 00:11:38-PST,4279;000000000000 Return-path: Date: Wed 23 Nov 88 00:10:48-PDT From: MOSIS AGENT Subject: MOSIS 1.6 AND 1.2 MICRON RUNS To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <596275848.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: N E W S F R O M M O S I S -------------------------------------------------------------------- - 1.2 MICRON RUNS ARE NOW AVAILABLE - 1.6 MICRON RUNS ARE NOW ON-DEMAND - TINYCHIP STUFFED FRAME IS AVAILABLE FOR 1.6 MICRON PROJECTS - SPECIAL PACKAGING IS AVAILABLE FOR 1.6 AND 1.2 MICRON PROJECTS -------------------------------------------------------------------- 1.2 MICRON RUNS ARE NOW AVAILABLE: MOSIS is pleased to announce the availability of 1.2 micron runs on a regular basis. The technology is 5X reticle-based N-well, where lambda = 0.6 microns. Two 1.2 micron runs have been completed with excellent results. MOSIS' 31 stage ring oscillator ran at approximately 75 MHZ. Contrast that to 55, 35, and 15 MHZ typically observed in MOSIS' 1.6, 2.0 and 3.0 micron runs respectively. These runs will be initiated ON-DEMAND rather than according to a published schedule. This means that MOSIS will initiate a run only after enough projects have been received to fill the run. Prices are $720 per square millimeter for NSF- and DARPA-sponsored users and $750 per square millimeter for users sending a purchase order directly to MOSIS. 1.6u RUNS ARE NOW ON-DEMAND 1.6u runs (lambda=0.8u) are now available ON-DEMAND rather than according to a published schedule. Note that MOSIS has now completed 29 1.6 micron runs. Some of these runs supported the successful Berkeley development of their 11.5 x 11.5 mm SPUR chip set. HOW TO PARTICIPATE IN ON-DEMAND RUNS The following rules apply ONLY to those designers who wish to share reticle and silicon space (and cost) with other MOSIS designers. These rules will make it possible for MOSIS to combine designs of different sizes, from different organizations onto a reticle set which defines a 14 x 14 mm die. 1. SPACE ON 1.2U AND 1.6U RUNS MUST BE RESERVED. This can be done by sending a note to Terri Lewis in an ATTENTION message. The message should indicate: A. your desire to get on either a 1.6 or 1.2 micron run; B. the width and height in millimeters of the space you would like to reserve; C. an estimate of the date you will submit your project. 2. MOSIS WILL SCHEDULE YOUR RUN when enough reservations have been received. We will contact you at that time to confirm your project size and give you the run closing date. 3. MOSIS WILL CHARGE YOU OR YOUR SPONSOR when the run is scheduled. There will be no refunds once the final negotiations are complete and your run has been scheduled. Designers who wish to purchase an entire 1.6 or 1.2 micron run should send a note to Cesar Pina in an ATTENTION message. The ATTENTION message should include all specifications because these jobs will be priced on an individual basis. TINYCHIP STUFFED FRAMES AVAILABLE FOR 1.6u RUNS Stuffed TinyChip frames for 1.6 micron projects are now available from from MOSIS. The project size for this frame is 2.22 x 2.25 millimeters. The internal design size (excluding pads) is 1.83 x 1.8 millimeters. Note that all 1.6 micron projects, including projects that use this frame, are priced by the square millimeter. You can get the geometry for this frame by sending the following message to MOSIS@MOSIS.EDU: REQUEST: LIBRARY LIBRARY: TINY_SCN16U_PADS FILE: TINY_SCN16U_PADS.DOC, 40PC22X22_STUFFED.CIF REQUEST: END SPECIAL PACKAGING FOR 1.6 AND 1.2 MICRON PROJECTS If the pin count or performance of the packages stocked by MOSIS is inadequate for your application, please send a note to Wes Hansford in an ATTENTION message. This note should specify your special requirements. Our 1.6/1.2 micron fabricator stocks a large variety of characterized packages for their internal high performance and high pin-out applications. ------- Message 22 -- ************************ 22-Nov-88 00:10:41-PST,2675;000000000000 Return-path: Date: Tue 22 Nov 88 00:10:05-PDT From: MOSIS AGENT Subject: NEW MOSIS DOCUMENTS To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <596189405.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: Monday, November 21, 1988 Files created in the past 30 days: ANNOUNCEMENTS.INF 150081 2-Nov-88 14:53:30 M88G.STS 856 28-Oct-88 9:12:12 M88H.BSIM_PRM 2626 28-Oct-88 16:41:29 M88H.PRM 7824 28-Oct-88 16:41:27 M88H.STS 860 7-Nov-88 8:59:19 M88I.STS 856 28-Oct-88 9:08:10 M88J.STS 860 24-Oct-88 11:37:03 M88K.BSIM_PRM 2627 28-Oct-88 9:52:19 M88K.PRM 7830 28-Oct-88 9:52:17 M88K.STS 856 9-Nov-88 9:56:47 M88L.BSIM_PRM 2614 8-Nov-88 8:23:26 M88L.PRM 6556 8-Nov-88 8:23:25 M88L.STS 868 16-Nov-88 16:04:34 M88M.STS 856 24-Oct-88 11:45:34 M88N.BSIM_PRM 2609 11-Nov-88 13:34:03 M88N.PRM 6542 11-Nov-88 13:34:02 M88N.STS 850 15-Nov-88 14:11:58 M89O.PRM 5036 8-Nov-88 8:24:16 M89O.STS 858 17-Nov-88 10:32:31 M89P.BSIM_PRM 2622 27-Oct-88 9:00:46 M89P.PRM 7814 27-Oct-88 9:00:45 M89P.STS 856 31-Oct-88 10:00:12 M89R.BSIM_PRM 2623 9-Nov-88 10:27:09 M89R.PRM 7334 9-Nov-88 10:27:08 M89R.STS 868 16-Nov-88 16:09:04 M89S.STS 870 14-Nov-88 11:13:13 M89T.STS 872 17-Nov-88 10:39:44 M8AU.STS 872 18-Nov-88 16:17:59 M8AV.STS 854 15-Nov-88 14:57:04 M8AW.STS 896 7-Nov-88 9:17:47 M8AX.STS 874 15-Nov-88 11:50:04 M8BB.STS 896 18-Nov-88 16:52:39 M8BY.STS 892 9-Nov-88 11:17:31 M8BZ.STS 872 14-Nov-88 11:47:25 PACK_BOND.INF 28458 4-Nov-88 16:38:09 PWCRULES2_LIST.INF 594 26-Oct-88 8:26:21 SCHED.INF 8068 3-Nov-88 14:04:11 SCMOS.TECH 86298 11-Nov-88 13:00:27 SCN20_VTI_SPECS.INF 5682 15-Nov-88 11:45:51 SCP20_ORBIT_BSIM.INF 160 28-Oct-88 10:09:18 SCP20_ORBIT_SPICE.INF 2216 28-Oct-88 10:10:39 TOPICS.INF 6942 27-Oct-88 10:28:08 VENDOR_BSIM.INF 1106 25-Oct-88 10:42:16 VENDOR_SPICE.INF 792 10-Nov-88 20:19:47 [] ------- Message 21 -- ************************ 12-Nov-88 01:41:16-PST,22486;000000000000 Return-path: Date: Sat 12 Nov 88 00:10:30-PDT From: MOSIS AGENT Subject: MOSIS SECOND-POLY INFORMATION To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <595325430.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: Dear MOSIS users, The following are further details on the preliminary poly2 (electrode) design rules for use with SCPE, SCEE or SCGE technologies. The poly2 layer can be used for precision capacitor applications or as a gate for transistors and as interconnect. The latest SCMOS.TECH Magic technology file covers these rules. Revision 7 of the SCMOS rules will be available by the end of the month. Cheers, Ms. MOSIS SECOND POLY RULES MIN VALUE IN LAMBDA LAYER CONTACT TO ELECTRODE 1. One size only 2x2 2. Space to contact to electrode 2 3. Electrode overlap of contact to electrode ON capacitor plate 3 4. Electrode overlap of contact to electrode NOT on capacitor plate 2 5. Space to poly 3 6. Space to active 3 ELECTRODE LAYER IN A PRECISION CAPACITOR 1. Poly overlaps electrode by 2 2. Inner plate space to active or well edge 2 3. Space to contact to poly 3 4. Pselect and nselect may not cross capacitor plates. This prevents different oxide thicknesses and plate sheet resistivities across the capacitor ELECTRODE AS GATE AND INTERCONNECT 1. Overlap of active 2 2. Space to active 1 3. Min width 2 4. Min space to electrode 3 5. Min space to or overlap by poly 2 The following CIF file can be plotted to show the use of the poly2 layer as a upper electrode for precision capacitors: DS1 100/10; C2 ; DF; DS2 100/10; C3 ; C4 T-115 282 ; C4 T318 282 ; C4 T-115 -105 ; C4 T318 -105 ; C5 T-114 254 ; C6 T-102 254 ; C7 T-91 254 ; C6 T-80 254 ; C5 T-69 254 ; C8 T-57 254 ; C9 T-49 254 ; C10 T-38 254 ; C11 T-27 254 ; C12 T-5 254 ; C13 T6 254 ; C6 T18 254 ; C14 T29 254 ; C7 T40 254 ; C15 T51 254 ; C12 T62 254 ; C16 T84 254 ; C8 T95 254 ; C9 T103 254 ; C17 T114 254 ; C15 T135 254 ; C6 T147 254 ; C14 T158 254 ; C18 T169 254 ; C19 T180 254 ; C6 T191 254 ; C10 T213 254 ; C20 T224 254 ; C12 T235 254 ; C14 T257 254 ; C8 T268 254 ; C5 T276 254 ; C11 T287 254 ; C10 T299 254 ; C20 T310 254 ; DF; DS4 100/10; LCPG; B20 20 0 0; DF; DS20 100/10; LCPG; P8 13 8 -1 6 -1 1 9 1 -1 -1 -1 -1 13 0 13 6 3 6 13; DF; DS19 100/10; LCPG; P-1 1 5 1 6 2 6 10 5 11 1 11 1 -1 -1 -1 -1 13 6 13 8 11 8 1 6 -1 -1 -1; DF; DS18 100/10; LCPG; P-1 8 5 8 6 9 6 10 5 11 1 11 1 -1 -1 -1 -1 13 6 13 8 11 8 8 6 6 -1 6; P-1 1 5 1 6 2 6 5 4 7 5 8 8 6 8 1 6 -1 -1 -1; DF; DS17 100/10; LCPG; P1 13 1 -1 -1 -1 -1 13; P8 13 8 -1 6 -1 6 13; P8 6 -1 6 -1 8 8 8; DF; DS16 100/10; LCPG; P8 13 8 -1 6 -1 3 5 0 -1 -1 -1 -1 13 1 13 1 4 3 8 4 8 6 4 6 13; DF; DS15 100/10; LCPG; P1 13 1 1 8 1 8 -1 -1 -1 -1 13; DF; DS14 100/10; LCPG; P6 -1 6 8 4 4 3 4 1 8 1 -1 -1 -1 -1 13 0 13 3 7 6 13 8 13 8 -1; DF; DS13 100/10; LCPG; P8 12 0 -1 -1 0 7 13; P7 -1 -1 12 0 13 8 0; DF; DS12 100/10; LCPG; P8 11 1 11 1 1 8 1 8 -1 -1 -1 -1 13 8 13; P6 6 -1 6 -1 8 6 8; DF; DS11 100/10; LCPG; P-1 8 5 8 6 9 6 10 5 11 1 11 1 -1 -1 -1 -1 13 6 13 8 11 8 8 6 6 -1 6; P6 -1 6 5 4 7 5 8 8 6 8 -1; DF; DS10 100/10; LCPG; P0 3 2 1 5 1 6 2 6 10 5 11 2 11 1 10 1 1 -1 1 -1 11 1 13 6 13 8 11 8 1 6 -1 1 -1 -1 2; DF; DS9 100/10; LCPG; P4 13 4 -1 3 -1 3 13; P8 11 -1 11 -1 13 8 13; DF; DS8 100/10; LCPG; P4 -1 -1 -1 -1 1 4 1; P3 13 3 -1 1 -1 1 13; P4 11 -1 11 -1 13 4 13; DF; DS7 100/10; LCPG; P-1 8 5 8 6 9 6 10 5 11 1 11 1 -1 -1 -1 -1 13 6 13 8 11 8 8 6 6 -1 6; DF; DS6 100/10; LCPG; P6 -1 6 10 5 11 2 11 1 10 1 -1 -1 -1 -1 11 1 13 6 13 8 11 8 -1; P-1 6 8 6 8 4 -1 4; DF; DS5 100/10; LCPG; P8 2 6 -1 1 -1 -1 1 -1 11 1 13 6 13 8 10 7 9 5 11 2 11 1 10 1 2 2 1 5 1 7 3; DF; DS3 100/10; LCPG; B160 120 80 60; LCEL; B80 80 60 60; LCCE; B20 20 60 60; LCCP; B20 20 140 60; LCWP; B140 120 190 60; LCMF; B100 40 30 60; B120 40 180 60; C21 T91 -18 ; C22 T98 -18 ; C23 T106 -18 ; C24 T113 -18 ; C25 T121 -18 ; C21 T128 -18 ; C24 T136 -18 ; C24 T150 -18 ; C22 T158 -18 ; C26 T172 -18 ; C22 T180 -18 ; C27 T187 -18 ; C28 T195 -18 ; C29 T110 133 ; C30 T116 133 ; C31 T122 133 ; C32 T127 133 ; C33 T133 133 ; C29 T139 133 ; C32 T144 133 ; C32 T155 133 ; C30 T161 133 ; C34 T171 133 ; C35 T177 133 ; C34 T182 133 ; C29 T188 133 ; C32 T194 133 ; C36 T199 133 ; C30 T205 133 ; C37 T211 133 ; C34 T216 133 ; C38 T41 107 ; C39 T48 107 ; C40 T56 107 ; C41 T64 107 ; C42 T30 28 ; C43 T36 28 ; C42 T42 28 ; C44 T47 28 ; C45 T53 28 ; C46 T59 28 ; C47 T65 28 ; C48 T70 28 ; C42 T76 28 ; C49 T191 107 ; C50 T199 107 ; C51 T207 107 ; C51 T214 107 ; LCOG; P60 60 110 60 110 130 110 60 60 60; P140 60 140 -10 140 60; C52 ; C53 ; DF; DS53 100/10; C54 T-7 -104 ; C55 T-3 -104 ; C55 T1 -104 ; C55 T4 -104 ; C56 T-114 -3 ; C57 T-109 -3 ; C57 T-103 -3 ; C57 T-97 -3 ; C58 T-114 97 ; C59 T-108 97 ; C60 T-102 97 ; C59 T-98 97 ; DF; DS60 100/10; LCPG; P2 0 0 0 2 0; P-1 5 1 7 1 0 0 0 0 5; DF; DS59 100/10; LCPG; P4 6 0 -1 -1 0 3 7; P4 6 4 1 3 0 1 0 0 1 0 6 1 7 3 7 4 5 3 6 1 6 0 5 0 1 1 0 3 0 3 1 3 6; DF; DS58 100/10; LCPG; P2 5 2 0 1 0 1 5; P4 2 0 2 0 3 4 3; DF; DS57 100/10; LCPG; P4 6 0 -1 -1 0 3 6; P4 5 4 1 3 0 1 0 0 1 0 5 1 6 3 6 4 5 3 4 2 5 1 5 0 5 0 1 1 0 2 0 3 1 3 5; DF; DS56 100/10; LCPG; P2 5 2 0 1 0 1 5; P4 2 0 2 0 3 4 3; DF; DS55 100/10; LCPG; P3 4 0 0 2 4; P2 4 2 0 0 0 0 3 0 4 2 4 3 3 2 3 2 4 1 4 0 3 0 1 1 0 2 0 2 1 2 4; DF; DS54 100/10; LCPG; P1 3 1 0 1 3; P2 1 0 1 0 2 2 2; DF; DS52 100/10; C61 T-10 -60 ; C61 T-10 179 ; C62 T0 -60 ; C62 T0 179 ; C63 T10 -60 ; C63 T10 179 ; C64 T20 -60 ; C64 T20 179 ; C65 T30 -60 ; C65 T30 179 ; C66 T40 -60 ; C66 T40 179 ; C67 T50 -60 ; C67 T50 179 ; C68 T60 -60 ; C68 T60 179 ; C69 T70 -60 ; C69 T70 179 ; C70 T80 -60 ; C70 T80 179 ; C71 T90 -60 ; C71 T90 179 ; C72 T100 -60 ; C72 T100 179 ; C73 T110 -60 ; C73 T110 179 ; C74 T120 -60 ; C74 T120 179 ; C75 T130 -60 ; C75 T130 179 ; C76 T140 -60 ; C76 T140 179 ; C77 T150 -60 ; C77 T150 179 ; C78 T160 -60 ; C78 T160 179 ; C79 T170 -60 ; C79 T170 179 ; C80 T180 -60 ; C80 T180 179 ; C81 T190 -60 ; C81 T190 179 ; C82 T200 -60 ; C82 T200 179 ; C83 T210 -60 ; C83 T210 179 ; C84 T220 -60 ; C84 T220 179 ; C85 T230 -60 ; C85 T230 179 ; C86 T240 -60 ; C86 T240 179 ; C87 T250 -60 ; C87 T250 179 ; C88 T-62 0 ; C88 T302 0 ; C89 T-62 10 ; C89 T302 10 ; C90 T-62 20 ; C90 T302 20 ; C91 T-62 30 ; C91 T302 30 ; C92 T-62 40 ; C92 T302 40 ; C93 T-62 50 ; C93 T302 50 ; C94 T-62 60 ; C94 T302 60 ; C95 T-62 70 ; C95 T302 70 ; C96 T-62 80 ; C96 T302 80 ; C97 T-62 90 ; C97 T302 90 ; C98 T-62 100 ; C98 T302 100 ; C99 T-62 110 ; C99 T302 110 ; C100 T-62 120 ; C100 T302 120 ; C101 T-62 130 ; C101 T302 130 ; DF; DS101 100/10; LCPG; P11 0 -11 0 11 0; DF; DS100 100/10; LCPG; P11 0 -11 0 11 0; DF; DS99 100/10; LCPG; P11 0 -11 0 11 0; DF; DS98 100/10; LCPG; P16 0 -16 0 16 0; DF; DS97 100/10; LCPG; P11 0 -11 0 11 0; DF; DS96 100/10; LCPG; P11 0 -11 0 11 0; DF; DS95 100/10; LCPG; P11 0 -11 0 11 0; DF; DS94 100/10; LCPG; P11 0 -11 0 11 0; DF; DS93 100/10; LCPG; P11 0 -11 0 11 0; DF; DS92 100/10; LCPG; P11 0 -11 0 11 0; DF; DS91 100/10; LCPG; P11 0 -11 0 11 0; DF; DS90 100/10; LCPG; P11 0 -11 0 11 0; DF; DS89 100/10; LCPG; P11 0 -11 0 11 0; DF; DS88 100/10; LCPG; P16 0 -16 0 16 0; DF; DS87 100/10; LCPG; P0 11 0 -11 0 11; DF; DS86 100/10; LCPG; P0 11 0 -11 0 11; DF; DS85 100/10; LCPG; P0 11 0 -11 0 11; DF; DS84 100/10; LCPG; P0 11 0 -11 0 11; DF; DS83 100/10; LCPG; P0 11 0 -11 0 11; DF; DS82 100/10; LCPG; P0 16 0 -16 0 16; DF; DS81 100/10; LCPG; P0 11 0 -11 0 11; DF; DS80 100/10; LCPG; P0 11 0 -11 0 11; DF; DS79 100/10; LCPG; P0 11 0 -11 0 11; DF; DS78 100/10; LCPG; P0 11 0 -11 0 11; DF; DS77 100/10; LCPG; P0 11 0 -11 0 11; DF; DS76 100/10; LCPG; P0 11 0 -11 0 11; DF; DS75 100/10; LCPG; P0 11 0 -11 0 11; DF; DS74 100/10; LCPG; P0 11 0 -11 0 11; DF; DS73 100/10; LCPG; P0 11 0 -11 0 11; DF; DS72 100/10; LCPG; P0 16 0 -16 0 16; DF; DS71 100/10; LCPG; P0 11 0 -11 0 11; DF; DS70 100/10; LCPG; P0 11 0 -11 0 11; DF; DS69 100/10; LCPG; P0 11 0 -11 0 11; DF; DS68 100/10; LCPG; P0 11 0 -11 0 11; DF; DS67 100/10; LCPG; P0 11 0 -11 0 11; DF; DS66 100/10; LCPG; P0 11 0 -11 0 11; DF; DS65 100/10; LCPG; P0 11 0 -11 0 11; DF; DS64 100/10; LCPG; P0 11 0 -11 0 11; DF; DS63 100/10; LCPG; P0 11 0 -11 0 11; DF; DS62 100/10; LCPG; P0 16 0 -16 0 16; DF; DS61 100/10; LCPG; P0 11 0 -11 0 11; DF; DS51 100/10; LCOG; P1 6 1 1 6 1 6 -1 -1 -1 -1 6; DF; DS50 100/10; LCOG; P6 5 1 5 1 1 6 1 6 -1 -1 -1 -1 6 6 6; P4 3 -1 3 -1 4 4 4; DF; DS49 100/10; LCOG; P6 6 6 0 5 -1 2 2 0 -1 -1 0 -1 6 1 6 1 2 2 4 3 4 4 2 4 6; DF; DS48 100/10; LCOG; P0 0 2 0 3 1 3 3 2 4 0 4 0 0 0 4 3 4 4 4 4 0 3 0 0 0; DF; DS47 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 4 1 4 0 3 0 0 0 4 1 4 3 4 4 4 4 0 3 0 1 0 -1 0; DF; DS46 100/10; LCOG; P0 3 2 3 3 3 2 4 0 4 0 0 0 4 3 4 4 4 4 3 3 2 0 2; P3 0 3 1 2 2 2 3 4 2 4 0; DF; DS45 100/10; LCOG; P2 4 2 0 1 0 1 4; P4 4 0 4 4 4; DF; DS44 100/10; LCOG; P4 0 3 0 1 0 0 0 0 4 1 4 3 4 4 4 4 3 2 4 1 4 0 3 0 1 1 0 2 0 4 1; DF; DS43 100/10; LCOG; P0 4 0 0 4 0 0 0 0 4; DF; DS42 100/10; LCOG; P4 4 0 4 0 0 4 0 0 0 0 4 4 4; P3 2 0 2 0 3 3 3; DF; DS41 100/10; LCOG; P0 6 3 3 3 -1 2 -1 2 3 -1 6; P6 6 2 2 2 3 5 6; DF; DS40 100/10; LCOG; P1 6 1 1 5 1 5 -1 -1 -1 -1 6; DF; DS39 100/10; LCOG; P0 2 1 1 3 1 4 1 4 4 3 5 1 5 1 4 1 0 -1 0 -1 5 1 6 4 6 5 5 5 0 4 -1 1 -1 -1 1; DF; DS38 100/10; LCOG; P-1 4 3 4 4 4 3 5 1 5 1 -1 -1 -1 -1 6 4 6 5 5 5 4 4 3 -1 3; DF; DS37 100/10; LCOG; P0 0 2 0 3 1 3 3 2 4 0 4 0 0 0 4 3 4 4 4 4 0 3 0 0 0; DF; DS36 100/10; LCOG; P0 3 2 3 3 3 2 4 0 4 0 0 0 4 3 4 4 4 4 3 3 2 0 2; P3 0 3 1 2 2 2 3 4 2 4 0; DF; DS35 100/10; LCOG; P0 4 0 0 4 0 0 0 0 4; DF; DS34 100/10; LCOG; P4 4 0 4 0 0 4 0 0 0 0 4 4 4; P3 2 0 2 0 3 3 3; DF; DS33 100/10; LCOG; P3 0 3 3 2 4 1 4 0 3 0 0 0 4 1 4 3 4 4 4 4 0; P0 2 4 2 4 1 0 1; DF; DS32 100/10; LCOG; P2 4 2 0 1 0 1 4; P4 4 0 4 4 4; DF; DS31 100/10; LCOG; P4 4 4 0 3 -1 0 3 0 0 0 4 3 1 3 4; DF; DS30 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 4 1 4 0 3 0 0 0 4 1 4 3 4 4 4 4 0 3 0 1 0 -1 0; DF; DS29 100/10; LCOG; P4 0 3 0 1 0 0 0 0 4 1 4 3 4 4 4 4 3 2 4 1 4 0 3 0 1 1 0 2 0 4 1; DF; DS28 100/10; LCOG; P0 6 3 3 3 -1 2 -1 2 3 -1 5; P5 5 2 2 1 3 5 6; DF; DS27 100/10; LCOG; P1 6 1 1 5 1 5 -1 -1 -1 -1 6; DF; DS26 100/10; LCOG; P-1 4 3 4 4 4 3 5 1 5 1 -1 -1 -1 -1 6 4 6 5 5 5 3 4 2 -1 2; DF; DS25 100/10; LCOG; P4 -1 4 4 3 5 1 5 1 4 1 -1 -1 -1 -1 5 1 6 4 6 5 5 5 -1; P-1 3 5 3 5 2 -1 2; DF; DS24 100/10; LCOG; P3 6 3 -1 2 -1 2 6; P5 5 -1 5 -1 6 5 6; DF; DS23 100/10; LCOG; P5 6 5 0 4 -1 1 4 1 -1 -1 -1 -1 6 0 6 4 2 4 6; DF; DS22 100/10; LCOG; P0 2 1 1 3 1 4 1 4 4 3 5 1 5 1 4 1 0 -1 0 -1 5 1 6 4 6 5 5 5 0 4 -1 1 -1 -1 1; DF; DS21 100/10; LCOG; P5 1 4 -1 1 -1 -1 0 -1 5 1 6 4 6 5 5 5 4 3 5 1 5 1 4 1 1 3 1 5 2; DF; C1 ; E This CIF file can be plotted to show the use of the poly2 layer as a gate for transistors: DS1 100/10; C2 ; DF; DS2 100/10; C3 ; C4 T-101 315 ; C4 T362 315 ; C4 T-101 -89 ; C4 T362 -89 ; C5 T-100 286 ; C6 T-90 286 ; C5 T-79 286 ; C7 T-69 286 ; C8 T-58 286 ; C9 T-48 286 ; C10 T-37 286 ; C11 T-26 286 ; C5 T-16 286 ; C12 T5 286 ; C13 T17 286 ; C8 T27 286 ; C5 T38 286 ; C5 T58 286 ; C14 T68 286 ; C13 T80 286 ; C15 T90 286 ; C16 T101 286 ; C6 T111 286 ; C5 T122 286 ; C17 T142 286 ; C18 T152 286 ; C8 T160 286 ; C19 T170 286 ; C6 T190 286 ; C13 T201 286 ; C15 T211 286 ; C20 T222 286 ; C11 T232 286 ; C13 T243 286 ; C10 T263 286 ; C21 T274 286 ; C5 T284 286 ; C15 T305 286 ; C18 T315 286 ; C7 T322 286 ; C9 T333 286 ; C10 T344 286 ; C21 T355 286 ; DF; DS4 100/10; LCPG; B20 20 0 0; DF; DS21 100/10; LCPG; P7 12 7 -1 6 -1 1 8 1 -1 -1 -1 -1 12 0 12 6 3 6 12; DF; DS20 100/10; LCPG; P-1 7 5 7 6 8 6 9 5 11 1 11 1 -1 -1 -1 -1 12 5 12 7 10 7 8 5 6 -1 6; P-1 1 5 1 6 2 6 5 4 6 5 8 7 5 7 1 5 -1 -1 -1; DF; DS19 100/10; LCPG; P1 12 1 -1 -1 -1 -1 12; P7 12 7 -1 6 -1 6 12; P7 6 -1 6 -1 7 7 7; DF; DS18 100/10; LCPG; P4 -1 -1 -1 -1 1 4 1; P2 12 2 -1 1 -1 1 12; P4 11 -1 11 -1 12 4 12; DF; DS17 100/10; LCPG; P7 12 7 -1 6 -1 3 5 0 -1 -1 -1 -1 12 1 12 1 3 3 7 4 7 6 3 6 12; DF; DS16 100/10; LCPG; P-1 7 5 7 6 8 6 9 5 11 1 11 1 -1 -1 -1 -1 12 5 12 7 10 7 8 5 6 -1 6; DF; DS15 100/10; LCPG; P6 -1 6 8 4 4 3 4 1 8 1 -1 -1 -1 -1 12 0 12 3 7 6 12 7 12 7 -1; DF; DS14 100/10; LCPG; P8 12 0 -1 -1 0 6 12; P6 -1 -1 12 0 12 8 0; DF; DS13 100/10; LCPG; P6 -1 6 9 5 11 2 11 1 9 1 -1 -1 -1 -1 10 1 12 5 12 7 10 7 -1; P-1 6 7 6 7 4 -1 4; DF; DS12 100/10; LCPG; P6 9 5 11 2 11 1 9 1 2 2 1 5 1 6 2 6 6 7 6 7 1 5 -1 1 -1 -1 1 -1 10 1 12 5 12 8 10; P9 4 4 4 4 6 9 6; DF; DS11 100/10; LCPG; P-1 1 5 1 6 2 6 9 5 11 1 11 1 -1 -1 -1 -1 12 5 12 7 10 7 1 5 -1 -1 -1; DF; DS10 100/10; LCPG; P0 3 2 1 5 1 6 2 6 9 5 11 2 11 1 9 1 1 -1 1 -1 10 1 12 5 12 7 10 7 1 5 -1 1 -1 -1 2; DF; DS9 100/10; LCPG; P-1 7 5 7 6 8 6 9 5 11 1 11 1 -1 -1 -1 -1 12 5 12 7 10 7 8 5 6 -1 6; P6 -1 6 5 4 6 5 8 7 5 7 -1; DF; DS8 100/10; LCPG; P4 12 4 -1 2 -1 2 12; P7 11 -1 11 -1 12 7 12; DF; DS7 100/10; LCPG; P8 2 5 -1 1 -1 -1 1 -1 10 1 12 5 12 8 10 6 9 5 11 2 11 1 9 1 2 2 1 5 1 6 3; DF; DS6 100/10; LCPG; P1 12 1 1 7 1 7 -1 -1 -1 -1 12; DF; DS5 100/10; LCPG; P7 11 1 11 1 1 7 1 7 -1 -1 -1 -1 12 7 12; P6 6 -1 6 -1 7 6 7; DF; DS3 100/10; LCEL; B20 100 10 50; P50 0 50 60 120 60 120 90 210 90 210 50 150 50 150 0; LCPG; P140 70 140 110 270 110 270 70; LCAA; P160 -10 160 160 200 160 200 120 190 120 190 30 200 30 200 -10; C22 T180 10 ; C22 T180 140 ; LCCP; B20 20 250 90; C23 T80 30 ; C23 T120 30 ; C24 T70 103 ; C25 T75 103 ; C24 T81 103 ; C26 T86 103 ; C27 T91 103 ; C28 T96 103 ; C29 T101 103 ; C30 T106 103 ; C24 T111 103 ; C31 T100 143 ; C32 T107 143 ; C33 T113 143 ; C34 T120 143 ; C35 T124 143 ; C36 T131 143 ; C37 T220 133 ; C38 T226 133 ; C39 T231 133 ; C40 T236 133 ; LCOG; P230 130 230 100 230 130; P165 145 140 145 165 145; P90 100 90 50 90 100; P90 80 10 80 90 80; C41 T50 -26 ; C42 T54 -26 ; C43 T59 -26 ; C44 T63 -26 ; C45 T67 -26 ; C41 T71 -26 ; C44 T75 -26 ; C44 T83 -26 ; C42 T87 -26 ; C46 T95 -26 ; C47 T99 -26 ; C46 T103 -26 ; C41 T107 -26 ; C44 T111 -26 ; C48 T115 -26 ; C42 T119 -26 ; C49 T123 -26 ; C46 T127 -26 ; C50 T220 8 ; C51 T225 8 ; C52 T230 8 ; C53 T235 8 ; C54 T240 8 ; C50 T245 8 ; C53 T250 8 ; C53 T259 8 ; C51 T264 8 ; C54 T274 8 ; C50 T278 8 ; C53 T283 8 ; C55 T288 8 ; C56 T292 8 ; C57 T297 8 ; C58 T220 33 ; C59 T226 33 ; C60 T232 33 ; C61 T237 33 ; C62 T242 33 ; C58 T248 33 ; C61 T253 33 ; C61 T264 33 ; C59 T269 33 ; C63 T280 33 ; C59 T285 33 ; C64 T291 33 ; C65 T296 33 ; P80 30 80 -20 80 30; P120 30 120 -20 120 30; P215 10 180 10 215 10; P250 90 250 40 250 90; C66 ; C67 ; DF; DS23 100/10; LCCE; B20 20 0 0; DF; DS22 100/10; LCCA; B20 20 0 0; DF; DS67 100/10; C68 T-101 -3 ; C69 T-95 -3 ; C69 T-89 -3 ; C69 T-83 -3 ; C70 T-101 97 ; C71 T-94 97 ; C72 T-88 97 ; C71 T-83 97 ; DF; DS72 100/10; LCPG; P2 0 0 0 2 0; P-1 6 1 7 1 0 0 0 0 6 0 5; DF; DS71 100/10; LCPG; P5 7 0 -1 -1 0 4 7; P4 6 4 1 3 0 1 0 0 1 0 6 1 7 3 7 5 6 4 5 3 6 1 6 0 6 0 1 1 0 3 0 3 1 3 6; DF; DS70 100/10; LCPG; P2 5 2 0 1 0 1 5; P4 2 0 2 0 3 4 3; DF; DS69 100/10; LCPG; P4 6 0 -1 -1 0 3 7; P4 6 4 1 3 0 1 0 0 1 0 5 1 7 3 7 4 5 2 6 1 6 0 5 0 1 1 0 2 0 3 1 3 6; DF; DS68 100/10; LCPG; P2 5 2 0 1 0 1 5; P4 2 0 2 0 3 4 3; DF; DS66 100/10; C73 T10 -72 ; C73 T10 205 ; C74 T20 -72 ; C74 T20 205 ; C75 T30 -72 ; C75 T30 205 ; C76 T40 -72 ; C76 T40 205 ; C77 T50 -72 ; C77 T50 205 ; C78 T60 -72 ; C78 T60 205 ; C79 T70 -72 ; C79 T70 205 ; C80 T80 -72 ; C80 T80 205 ; C81 T90 -72 ; C81 T90 205 ; C82 T100 -72 ; C82 T100 205 ; C83 T110 -72 ; C83 T110 205 ; C84 T120 -72 ; C84 T120 205 ; C85 T130 -72 ; C85 T130 205 ; C86 T140 -72 ; C86 T140 205 ; C87 T150 -72 ; C87 T150 205 ; C88 T160 -72 ; C88 T160 205 ; C89 T170 -72 ; C89 T170 205 ; C90 T180 -72 ; C90 T180 205 ; C91 T190 -72 ; C91 T190 205 ; C92 T200 -72 ; C92 T200 205 ; C93 T210 -72 ; C93 T210 205 ; C94 T220 -72 ; C94 T220 205 ; C95 T230 -72 ; C95 T230 205 ; C96 T240 -72 ; C96 T240 205 ; C97 T250 -72 ; C97 T250 205 ; C98 T260 -72 ; C98 T260 205 ; C99 T270 -72 ; C99 T270 205 ; C100 T280 -72 ; C100 T280 205 ; C101 T290 -72 ; C101 T290 205 ; C102 T-45 -10 ; C102 T345 -10 ; C103 T-45 0 ; C103 T345 0 ; C104 T-45 10 ; C104 T345 10 ; C105 T-45 20 ; C105 T345 20 ; C106 T-45 30 ; C106 T345 30 ; C107 T-45 40 ; C107 T345 40 ; C108 T-45 50 ; C108 T345 50 ; C109 T-45 60 ; C109 T345 60 ; C110 T-45 70 ; C110 T345 70 ; C111 T-45 80 ; C111 T345 80 ; C112 T-45 90 ; C112 T345 90 ; C113 T-45 100 ; C113 T345 100 ; C114 T-45 110 ; C114 T345 110 ; C115 T-45 120 ; C115 T345 120 ; C116 T-45 130 ; C116 T345 130 ; C117 T-45 140 ; C117 T345 140 ; C118 T-45 150 ; C118 T345 150 ; DF; DS118 100/10; LCPG; P11 0 -11 0 11 0; DF; DS117 100/10; LCPG; P11 0 -11 0 11 0; DF; DS116 100/10; LCPG; P11 0 -11 0 11 0; DF; DS115 100/10; LCPG; P11 0 -11 0 11 0; DF; DS114 100/10; LCPG; P11 0 -11 0 11 0; DF; DS113 100/10; LCPG; P17 0 -17 0 17 0; DF; DS112 100/10; LCPG; P11 0 -11 0 11 0; DF; DS111 100/10; LCPG; P11 0 -11 0 11 0; DF; DS110 100/10; LCPG; P11 0 -11 0 11 0; DF; DS109 100/10; LCPG; P11 0 -11 0 11 0; DF; DS108 100/10; LCPG; P11 0 -11 0 11 0; DF; DS107 100/10; LCPG; P11 0 -11 0 11 0; DF; DS106 100/10; LCPG; P11 0 -11 0 11 0; DF; DS105 100/10; LCPG; P11 0 -11 0 11 0; DF; DS104 100/10; LCPG; P11 0 -11 0 11 0; DF; DS103 100/10; LCPG; P17 0 -17 0 17 0; DF; DS102 100/10; LCPG; P11 0 -11 0 11 0; DF; DS101 100/10; LCPG; P0 11 0 -11 0 11; DF; DS100 100/10; LCPG; P0 11 0 -11 0 11; DF; DS99 100/10; LCPG; P0 11 0 -11 0 11; DF; DS98 100/10; LCPG; P0 11 0 -11 0 11; DF; DS97 100/10; LCPG; P0 11 0 -11 0 11; DF; DS96 100/10; LCPG; P0 11 0 -11 0 11; DF; DS95 100/10; LCPG; P0 11 0 -11 0 11; DF; DS94 100/10; LCPG; P0 11 0 -11 0 11; DF; DS93 100/10; LCPG; P0 11 0 -11 0 11; DF; DS92 100/10; LCPG; P0 17 0 -17 0 17; DF; DS91 100/10; LCPG; P0 11 0 -11 0 11; DF; DS90 100/10; LCPG; P0 11 0 -11 0 11; DF; DS89 100/10; LCPG; P0 11 0 -11 0 11; DF; DS88 100/10; LCPG; P0 11 0 -11 0 11; DF; DS87 100/10; LCPG; P0 11 0 -11 0 11; DF; DS86 100/10; LCPG; P0 11 0 -11 0 11; DF; DS85 100/10; LCPG; P0 11 0 -11 0 11; DF; DS84 100/10; LCPG; P0 11 0 -11 0 11; DF; DS83 100/10; LCPG; P0 11 0 -11 0 11; DF; DS82 100/10; LCPG; P0 17 0 -17 0 17; DF; DS81 100/10; LCPG; P0 11 0 -11 0 11; DF; DS80 100/10; LCPG; P0 11 0 -11 0 11; DF; DS79 100/10; LCPG; P0 11 0 -11 0 11; DF; DS78 100/10; LCPG; P0 11 0 -11 0 11; DF; DS77 100/10; LCPG; P0 11 0 -11 0 11; DF; DS76 100/10; LCPG; P0 11 0 -11 0 11; DF; DS75 100/10; LCPG; P0 11 0 -11 0 11; DF; DS74 100/10; LCPG; P0 11 0 -11 0 11; DF; DS73 100/10; LCPG; P0 11 0 -11 0 11; DF; DS65 100/10; LCOG; P0 4 2 2 2 0 1 0 1 2 -1 4; P4 4 2 2 1 2 3 4; DF; DS64 100/10; LCOG; P0 4 0 0 4 0 0 0 0 4; DF; DS63 100/10; LCOG; P0 3 2 3 3 3 2 3 0 3 0 0 0 4 3 4 4 4 4 3 3 2 0 2; DF; DS62 100/10; LCOG; P3 0 3 3 2 3 1 3 0 3 0 0 0 4 1 4 3 4 4 4 4 0; P0 2 4 2 4 1 0 1; DF; DS61 100/10; LCOG; P2 4 2 0 1 0 1 4; P4 3 0 3 0 4 4 4; DF; DS60 100/10; LCOG; P4 4 4 0 3 -1 0 3 0 0 0 4 3 1 3 4; DF; DS59 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 3 1 3 0 3 0 0 0 4 1 4 3 4 4 4 4 0 3 0 1 0 -1 0; DF; DS58 100/10; LCOG; P4 0 3 0 1 0 0 0 0 4 1 4 3 4 4 3 3 3 2 3 1 3 0 3 0 1 1 0 2 0 3 1; DF; DS57 100/10; LCOG; P3 3 0 3 0 0 3 0 0 0 0 4 3 4; P3 2 0 2 3 2; DF; DS56 100/10; LCOG; P3 4 2 0 1 0 0 4 1 1 3 4; DF; DS55 100/10; LCOG; P2 0 0 0 2 0; P1 4 1 0 0 0 0 4; P2 3 0 3 0 4 2 4; DF; DS54 100/10; LCOG; P3 0 3 3 2 3 1 3 0 3 0 0 0 3 1 4 2 4 3 3 3 0; P0 2 3 2 3 1 0 1; DF; DS53 100/10; LCOG; P2 4 2 0 1 0 1 4; P3 3 0 3 0 4 3 4; DF; DS52 100/10; LCOG; P3 4 3 0 0 2 0 0 0 4 3 1 3 4; DF; DS51 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 3 1 3 0 3 0 0 0 3 1 4 2 4 3 3 3 0 2 0 1 0 -1 0; DF; DS50 100/10; LCOG; P3 0 2 0 1 0 0 0 0 3 1 4 2 4 3 3 3 2 2 3 1 3 0 3 0 1 1 0 2 0 3 1; DF; DS49 100/10; LCOG; P0 0 2 0 2 1 2 2 2 3 0 3 0 0 0 3 2 3 3 3 3 0 2 0 0 0; DF; DS48 100/10; LCOG; P0 2 2 2 2 3 0 3 0 0 0 3 2 3 3 3 3 2 2 1 0 1; P2 0 2 1 1 2 2 2 3 1 3 0; DF; DS47 100/10; LCOG; P0 3 0 0 3 0 0 0 0 3; DF; DS46 100/10; LCOG; P3 3 0 3 0 0 3 0 0 0 0 3 3 3; P2 1 0 1 0 2 2 2; DF; DS45 100/10; LCOG; P2 0 2 2 2 3 1 3 0 2 0 0 0 3 1 3 2 3 3 3 3 0; P0 2 3 2 3 1 0 1; DF; DS44 100/10; LCOG; P2 3 2 0 1 0 1 3; P3 3 0 3 3 3; DF; DS43 100/10; LCOG; P3 3 3 0 2 0 0 2 0 0 0 3 2 1 2 3; DF; DS42 100/10; LCOG; P0 1 1 0 2 0 2 1 2 2 2 3 1 3 0 2 0 0 0 3 1 3 2 3 3 3 3 0 2 0 1 0 0 0; DF; DS41 100/10; LCOG; P3 0 2 0 1 0 0 0 0 3 1 3 2 3 3 3 3 2 2 3 1 3 0 2 0 1 1 0 2 0 3 1; DF; DS40 100/10; LCOG; P0 4 2 2 2 0 1 0 1 2 -1 4; P4 4 2 2 1 2 3 4; DF; DS39 100/10; LCOG; P0 4 0 0 4 0 0 0 0 4; DF; DS38 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 3 1 3 0 3 0 0 0 3 1 4 3 4 4 3 4 0 3 0 1 0 -1 0; DF; DS37 100/10; LCOG; P0 3 2 3 3 3 2 3 0 3 0 0 0 4 3 4 4 3 4 2 3 2 0 2; DF; DS36 100/10; LCOG; P4 4 0 4 0 0 4 0 0 0 0 5 4 5; P3 2 0 2 0 3 3 3; DF; DS35 100/10; LCOG; P5 5 2 0 -1 5 0 5 2 1 4 5; DF; DS34 100/10; LCOG; P2 0 0 0 2 0; P1 5 1 0 0 0 0 5; P2 4 0 4 0 5 2 5; DF; DS33 100/10; LCOG; P2 5 2 0 1 0 1 5; P4 4 0 4 0 5 4 5; DF; DS32 100/10; LCOG; P5 1 3 0 1 0 0 0 0 4 1 5 3 5 5 4 4 3 3 4 1 4 0 4 0 1 1 0 3 0 4 1; DF; DS31 100/10; LCOG; P3 0 3 4 1 4 0 4 0 0 0 4 1 5 3 5 4 4 4 0; P0 2 4 2 4 1 0 1; DF; DS30 100/10; LCOG; P0 0 2 0 3 1 3 3 2 3 0 3 0 0 0 4 2 4 4 3 4 0 2 0 0 0; DF; DS29 100/10; LCOG; P0 1 1 0 2 0 3 1 3 3 2 3 1 3 0 3 0 0 0 3 1 4 2 4 4 3 4 0 2 0 1 0 -1 0; DF; DS28 100/10; LCOG; P0 2 2 2 3 3 2 3 0 3 0 0 0 4 2 4 4 3 4 2 2 2 0 2; P3 0 3 1 2 2 2 3 4 2 4 0; DF; DS27 100/10; LCOG; P2 4 2 0 1 0 1 4; P4 3 0 3 0 4 4 4; DF; DS26 100/10; LCOG; P4 0 2 0 1 0 0 0 0 3 1 4 2 4 4 3 3 3 2 3 1 3 0 3 0 1 1 0 2 0 3 1; DF; DS25 100/10; LCOG; P0 4 0 0 4 0 0 0 0 4; DF; DS24 100/10; LCOG; P4 3 0 3 0 0 4 0 0 0 0 4 4 4; P3 2 0 2 3 2; DF; C1 ; E ------- Message 20 -- ************************ 1-Nov-88 09:13:47-PST,1443;000000000001 Return-path: Date: Tue 1 Nov 88 09:12:52-PDT From: MOSIS AGENT Subject: NSF ANNOUNCEMENT To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: BCHERN@NOTE.NSF.GOV Message-ID: <594407573.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: Dear MOSIS USER: The NSF/DARPA Agreement to support wide university use of MOSIS is scheduled to end June 30, 1989. Serious questions have been raised by the Engineering and Education Directorates of NSF as to the need for the Foundation to continue further support for educational use of MOSIS. What the Foundation seeks to determine is the importance to MOSIS Users of continuing and expanding NSF support for MOSIS. Specifically: 1. How important has MOSIS been to you for educational purposes? 2. If NSF cuts off support for MOSIS, what impact would this have on your educational program? What would you do? Time for NSF and DARPA to negotiate a new agreement is running out, therefore, we need your immediate response. Please send your comments to Dr. Bernie Chern by E-Mail to: bchern@note.nsf.gov or chern@A.ISI.EDU or by letter to: Dr. Bernie Chern CISE DIRECTORATE National Science Foundation Room 414 Washington, D.C. 20550 cc: John Toole, DARPA ------- Message 19 -- ************************ 27-Oct-88 10:14:02-PDT,1535;000000000001 Return-path: Date: Thu 27 Oct 88 10:12:53-PDT From: MOSIS AGENT Subject: MOSIS ANNOUNCEMENTS To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <593975573.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: Change In New Project Request: Please Note That Effective Thursday, 10/27/88 all REQUEST:NEW-PROJECT messages must include both a Technology and a Lambda parameter. MOSIS TURNAROUND TIMES: During 1988, MOSIS achieved the following average turnaround times for regularly scheduled runs: 3.0u P-well 7.9 weeks 2.0u N-Well 7.8 weeks (excluding one 14.2 week run) 2.0u P-Well 12.6 weeks Over the next six months, we want to get these times down even lower. This means we have to be very firm about observing our scheduled run closing dates and times. - Geometry sent over the network must be received by MOSIS before 7:00 a.m. on the day a run closes. - Geometry sent on tape must be received by MOSIS two days before a run closes. It isn't uncommon for networks or computer systems to have problems and you should consider this when submitting your design geometry. To the extent that we can, we will prevent these problems on our end, however please be aware that we can not re-schedule a run because of system problems. Please allow yourself plenty of extra time when submitting a project for a specific run. ------- Message 18 -- ************************ 24-Oct-88 10:16:10-PDT,1533;000000000001 Return-path: Date: Mon 24 Oct 88 10:15:19-PDT From: MOSIS AGENT Subject: MOSIS ANNOUNCEMENTS To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <593716519.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: CHANGE IN NEW PROJECT REQUEST: Please note that effective Monday, 10/24/88 all REQUEST:NEW-PROJECT messages must include both a Technology and a Lambda parameter. MOSIS TURNAROUND TIMES: During 1988, MOSIS achieved the following average turnaround times for regularly scheduled runs: 3.0u P-well 7.9 weeks 2.0u N-Well 7.8 weeks (excluding one 14.2 week run) 2.0u P-Well 12.6 weeks Over the next six months, we want to get these times down even lower. This means we have to be very firm about observing our scheduled run closing dates and times. - Geometry sent over the network must be received by MOSIS before 7:00 a.m. on the day a run closes. - Geometry sent on tape must be received by MOSIS two days before a run closes. It isn't uncommon for networks or computer systems to have problems and you should consider this when submitting your design geometry. To the extent that we can, we will prevent these problems on our end, however please be aware that we can not re-schedule a run because of system problems. Please allow yourself plenty of extra time when submitting a project for a specific run. ------- Message 17 -- ************************ 22-Oct-88 00:11:12-PDT,3105;000000000001 Return-path: Date: Sat 22 Oct 88 00:10:12-PDT From: MOSIS AGENT Subject: MOSIS ANNOUNCEES DOUBLE POLY RUNS To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <593507412.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: Dear MOSIS Users, MOSIS is pleased to announce the addition of a new technology: 2 MICRON 2 METAL 2 POLY P-WELL CMOS. FABRICATOR: The fabricator for these runs will be Orbit Semiconductor. Based on the results of experimental runs with Orbit, yield is expected be as high as the best experienced with our 2 micron double metal single poly fabricators. SCHEDULE: The 2 micron P-well runs in the current MOSIS Fabrication Schedule will support both double and single poly designs, including TinyChips. Turnaround time is expected to be approximately seven weeks. PLEASE NOTE: The 2 micron P-well run scheduled to close October 20 has been rescheduled to close October 26. If you would like to sample Orbit's processing, your designs must arrive at MOSIS by that date. PROJECT SUBMITTAL: When you submit a new project request for a double poly run, the technology should be SCPE, SCGE OR SCEE. If your project is a TinyChip, the technology should be TINY-SCPE, TINY-SCGE or TINY-SCEE. PROCESS SPECIFICATIONS: We are purchasing wafers against Orbit's published process specification. This specification will be available within two weeks. MOSIS will send an announcement at that time. The poly to poly capacitance is expected to range from 4.3 to 5.3 x 10^-4 pf per sq micron. The second poly sheet resistance is expected to range from 15 to 30 ohms per square. Second poly running over active will make transistors. The characteristics of those transistors are currently being investigated and will be reported. DESIGN RULES: Temporary rules are as follows. Capacitors should be constructed over field oxide with poly1 or poly2 enclosing poly2 or poly1 by 2 or more lambda (lambda=1 micron). Poly1 and poly 2 space to active should be one or more lambda. If poly1 or poly2 does not enclose poly2 or poly1 then the edges of the two poly layers should never be coincident. They should be separated by 2 or more lambda. You can obtain a CIF file showing the electrode design rules by sending a message to MOSIS@MOSIS.EDU containing the following text: REQUEST: INFORMATION TOPIC: SCRULES6_20.CIF REQUEST: END You can obtain CIF files for the entire set of design rules by substituting SCRULES6 for SCRULES6_20.CIF in the above message. A new version of the magic scmos.tech file, which includes the electrode layer, will be available within two weeks. MOSIS will send an announcement at that time. SPICE DECKS: Spice level2 and BSIM spice decks are available on line. They may be obtained by sending MOSIS the following message. REQUEST:INFORMATION TOPIC:SCPE20_ORBIT_SPICE,SCPE20_ORBIT_BSIM REQUEST:END ------- Message 16 -- ************************ 6-Sep-88 07:02:09-PDT,2557;000000000001 Return-path: Received: from duke.cs.duke.edu by Cheeta.ISI.Edu with INTERNET ; Tue, 6 Sep 88 07:01:58 PDT Received: from kedem.cs.duke.edu by duke.cs.duke.edu (5.59/DUKE/08-19-88) id AA26966; Tue, 6 Sep 88 10:08:02 EDT Received: by kedem.cs.duke.edu (5.59/DUKE/08-19-88) id AA02939; Tue, 6 Sep 88 10:07:31 EDT Date: Tue, 6 Sep 88 10:07:31 EDT From: Gershon Kedem Message-Id: <8809061407.AA02939@kedem.cs.duke.edu> To: MOSIS-BBOARD@MOSIS.EDU Subject: VPNR: Standard Cells placement and routing software. VPNR (Vanilla Place aNd Route) is a computer-aided engineering tool developed jointly by Duke University and The Microelectronics Center of North Carolina. VPNR is useful for automatically placing and routing standard cell circuits. The package includes quadrisection based placement, a heuristic global router, a greedy channel router, and a dog-leg router with channel compaction. VPNR supports either HILO or RNL-NETLIST input. The output of VPNR is a MAGIC file. In addition to the placement and routing software, a VPNR distribution includes a set of standard cells designed with revision 6 of MOSIS scalable design rules. A unique feature of the VPNR system is its modularity. Through use of a unifying language to describe placement and routing of standard cells (the VPNR language), users can literally mix and match various placement and routing approaches to meet their specific needs. Other unique features of the system are automatic auditors of the place and route procedures, and the automatic wiring of scan based testability cells. VPNR runs a variety of UNIX platforms including microVAX, VAX, and Sun's (2, 3, and 4). The VPNR tools have been used for the layout of a number of chips at the Microelectronics Center of North Carolina and its Participating Institutions. VPNR is available on an "as is" basis, under a site wide license agreement from MCNC. The cost is: 175.00 Universities & Non-profit organizations 275.00 Foreign " " " " 800.00 Commercial 900.00 Foreign Commercial Licensing information could be obtained from: Jeri Williams Software Distribution Coordinator MCNC Post Office Box 12889 RTP, NC 27709 (919) 248-1938 arpa: jeri@mcnc.org uucp: decvax!mcnc!jeri Technical inquiries should be addressed to: Dr. Gershon Kedem Computer Science Department, Duke University, Durham, NC, 27706. Phone: (919) 684-3048 Net: kedem@cs.duke.edu Message 15 -- ************************ 22-Jul-88 00:10:15-PDT,10343;000000000001 Return-path: Date: Fri 22 Jul 88 00:08:50-PDT From: MOSIS AGENT Subject: NEW MOSIS PRICES To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: FRY@CHEETA.ISI.EDU Message-ID: <585558530.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: Dear MOSIS User: Here are the MOSIS prices for July 1, 1988 through June 30, 1989. PRICE SCHEDULE A: To be used if your organization is submitting a purchase order to MOSIS. PRICE SCHEDULE B: To be used if you account is sponsored by DARPA or NSF (no purchase order involved). If you have any questions about these prices please contact Kathie Fry at or (213) 822-1511. PRICE SCHEDULE A FOR ORGANIZATIONS SUBMITTING PURCHASE ORDERS TO MOSIS (prices valid through June 30, 1989.) ------------------------------------------------------------------------------ | TECHNOLOGY MAXIMUM PROJECT MINIMUM TOTAL ADDITIONAL | | SIZE (MM) QUANTITIES PRICE PARTS | ------------------------------------------------------------------------------ | PRICED PER-PROJECT: | | | | CMOS 2.3 x 3.4 4 $ 400* N/A | | 3.0um 4.6 x 6.8 12 $ 2,200 $ 960 (6 parts)| | 6.9 x 6.8 18 $ 5,000 $ 1,440 | | 7.9 x 9.2 24 $ 10,000 $ 2,160 | | | | CMOS 2.22 x 2.25 4 $ 400* N/A | | 2.0um 4.6 x 6.8 12 $ 2,500 $ 1,440 (8 parts)| | 6.9 x 6.8 24 $ 5,900 $ 1,760 | | 7.9 x 9.2 32 $ 11,800 $ 2,560 | | | | * These are TinyChips and certain restrictions apply. See Fabrication | | Schedule for details. | ------------------------------------------------------------------------------ ------------------------------------------------------------------------------ | PRICE PER MINIMUM PACKAGING PACKAGING | | TECHNOLOGY SQ MM LOT COST / LOT COST / PART| ------------------------------------------------------------------------------ | PRICED PER-SQUARE MILLIMETER: | | | | CMOS | | 1.6um $ 520 50 $2,000 $40 | | | | Please do your 1.6um project area calculaton in microns, converting the | | result into square millimeters which you have carried out to three decimal | | places. The price should be rounded to the nearest dollar. | | | | Sample cost calculation for purchasing 50 packaged parts: | | | | (4286um) * (2189um) = 9.382 sq mm; [(9.382 sq mm) * ($520/sq mm)] + | | $2,000 = $6,879. | ------------------------------------------------------------------------------ PLACING AN ORDER: The first time you place an order with MOSIS, please fill out two copies of our customer agreement (copies available from MOSIS). BOTH copies of the agreement should be signed by your authorized representative and returned to us. We will sign them and return one signed original to you. MOSIS must have a purchase order before proceeding with fabrication. Please send the purchase order to: KATHLEEN FRY, THE MOSIS SERVICE, USC/ INFORMATION SCIENCES INSTITUTE, 4676 ADMIRALTY WAY, MARINA DEL REY, CA 90292-6695. Tapes should also be sent to this address. Payment terms are net 30 days. Pricing includes shipping costs but not sales tax. Parts will be sent to the shipping address listed on the purchase order so please make sure this address is correct. A 20% price discount is available to educational institutions. This discount is also available if your project is part of work performed under a current government contract. To receive the government contract discount, please include the following information on your purchase order: 1) Contract Number, 2) Funding Agency, 3) Program Manager, 4) Contract Expiration Date. PLEASE NOTE: DISCOUNTS ARE NOT AVAILABLE FOR TINYCHIPs OR 1.6 MICRON TECHNOLOGIES. MOSIS accepts designs in CIF, GDS II and MEBES format. You may send your layout geometry by electronic mail (instructions are outlined in the MOSIS User Manual) or on a magnetic tape via regular mail. Magnetic tapes must be accompanied by a completed MOSIS Submission Form (available from MOSIS). TAPES AND ACCOMPANYING PAPERWORK MUST BE SENT TO KATHLEEN FRY. PRICE SCHEDULE B TO BE USED FOR NSF AND DARPA SPONSORED ACCOUNTS IF NO PURCHASE ORDER IS INVOLVED (prices valid through June 30, 1989) -----------------------------------------------------------------------------| | TECHNOLOGY MAXIMUM PROJECT MINIMUM TOTAL ADDITIONAL | | SIZE (MM) QUANTITIES PRICE PARTS | -----------------------------------------------------------------------------| | PRICED PER-PROJECT: | | | | CMOS 2.3 x 3.4 4 $ 400* N/A | | 3.0um 4.6 x 6.8 12 $ 1,400 $ 720 (6 parts)| | 6.9 x 6.8 18 $ 3,000 $ 1,020 | | 7.9 x 9.2 24 $ 6,000 $ 1,500 | | | | CMOS 2.22 x 2.25 4 $ 400* N/A | | 2.0um 4.6 x 6.8 12 $ 1,600 $ 1,120 (8 parts)| | 6.9 x 6.8 24 $ 3,800 $ 1,280 | | 7.9 x 9.2 32 $ 7,600 $ 1,920 | | | | * These are TinyChips and certain restrictions apply. See Fabrication | | Schedule for details. | ------------------------------------------------------------------------------ ------------------------------------------------------------------------------ | PRICE PER MINIMUM PACKAGING PACKAGING | | TECHNOLOGY SQ MM LOT COST / LOT COST / PART| ------------------------------------------------------------------------------ | PRICED PER-SQUARE MILLIMETER: | | | | CMOS | | 1.6um $ 450 50 $2,000 $40 | | | | Please do your 1.6um project area calculaton in microns, converting the | | result into square millimeters which you have carried out to three decimal | | places. The price should be rounded to the nearest dollar. | | | | Sample cost calculation for purchasing 50 packaged parts: | | | | (4286um) * (2189um) = 9.382 sq mm; [(9.382 sq mm) * ($520/sq mm)] + | | $2,000 = $6,879. | ------------------------------------------------------------------------------ PLACING AN ORDER: If your MOSIS account is sponsored by DARPA or NSF your designs must be sent to MOSIS over electronic mail. If you wish to send tapes this must be authorized in advance by DARPA or NSF. Tapes must be accompanied by a completed MOSIS Submission Form (available from MOSIS). TAPES AND ACCOMPANYING PAPERWORK ARE TO BE SENT TO KATHLEEN FRY. THIS INFORMATION APPLIES TO BOTH PRICE SCHEDULES PROJECT SIZE: MOSIS will add scribe lanes and other overhead to the submitted geometry for all technologies. The maximum project sizes listed for 2.0 and 3.0 micron CMOS refer to actual design area. ASSEMBLY: Circuits are either bonded per your instructions or MOSIS provides a diagram showing how bonding was done. Lids will be taped unless you request hermetic sealing. 3.0 AND 2.0 MICRON TECHNOLOGIES: The total price for these projects includes packaging. You may request unpackaged parts or provide your own packages, however the price does not change for these options. 1.6 MICRON TECHNOLOGY: The price per square millimeter for these projects does NOT include packaging. Packaging is available at $40 per packaged part. If you supply your own packages, there is a charge of $25 per packaged part and you must provide MOSIS with package lids and a bonding diagram. These must be received prior to fabrication. ADDITIONAL PARTS AND PRODUCTION ORDERS: If you wish to order more than the minimum quantity of 2.0 or 3.0 micron CMOS parts, please request the desired additional parts in your initial order. These extra parts must be ordered, and are priced, in increments of six (for CMOS 3.0um) and eight (for CMOS 2.0um). Orders for an entire wafer lot of a single die type will be accepted only after a project has been successfully fabricated through MOSIS and tested by the designer. Quotes will be given for each individual job. ADDITIONAL INFORMATION: For further information, contact the following MOSIS staff at (213) 822-1511 or by network mail. Order Information: Kathleen Fry FRY@MOSIS.EDU General Information: Sam Delatorre DELATORRE@MOSIS.EDU Documentation Requests: Christine Tomovich TOMOVICH@MOSIS.EDU ------- Message 14 -- ************************ 20-Jul-88 00:09:43-PDT,3668;000000000000 Return-path: Date: Wed 20 Jul 88 00:08:43-PDT From: MOSIS AGENT Subject: MOSIS DOUBLE POLY RUNS To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: FRY@CHEETA.ISI.EDU Message-ID: <585385723.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: Dear MOSIS Users: This message is for all designers needing TWO levels of poly for their CMOS designs. In order to establish a schedule for TWO MICRON DOUBLE-POLY DOUBLE-METAL CMOS runs, MOSIS needs to know: 1. The number and size of designs that would be submitted for this technology over the next year. 2. Preference for P-well or N-well technology. We will only be able to provide runs in ONE of these technologies. We have developed interfaces to two vendors and we need to verify the demand before committing to runs. IF YOU ARE INTERESTED IN THIS TECHNOLOGY, PLEASE RESPOND TO THIS MESSAGE AS QUICKLY AS POSSIBLE. IF THE RESPONSE IS TOO LOW, WE WILL BE FORCED TO CONCLUDE THAT THE DEMAND IS NOT HIGH ENOUGH TO JUSTIFY ADDING A NEW TECHNOLOGY TO OUR PRODUCTION SCHEDULE. Please use the attached form for your response, and send it to . Thanks for your help! EXPECTED 2 MICRON 2 POLY 2 METAL DESIGN SUBMISSIONS SEP 88 - AUG 89 ----------------------------------------------------------------------------- NAME: ORGANIZATION: ------------------------------------------------------------------------------ SPONSOR (put an "X" by one of the following) DARPA NSF COMMERCIAL (PO direct from customer) ------------------------------------------------------------------------------ TECHNOLOGY PREFERENCE (put an "X" by one of the following) P WELL N WELL ------------------------------------------------------------------------------ NUMBER OF EXPECTED SUBMISSIONS ( fill in the squares with numbers ) SEP OCT NOV DEC JAN FEB MAR APR MAY JUN JUL AUG *************************************************************************** Tiny Chip | | | | | | | | | | | | | 2200x2250 u | | | | | | | | | | | | | | | | | | | | | | | | | | *************************************************************************** Small Die | | | | | | | | | | | | | up to | | | | | | | | | | | | | 4600x6800 u | | | | | | | | | | | | | *************************************************************************** Medium Die | | | | | | | | | | | | | up to | | | | | | | | | | | | | 6800x6900 u | | | | | | | | | | | | | *************************************************************************** Large Die | | | | | | | | | | | | | up to | | | | | | | | | | | | | 7900x9200 u | | | | | | | | | | | | | *************************************************************************** Oversize Die | | | | | | | | | | | | | greater than | | | | | | | | | | | | | 7900x9200 u | | | | | | | | | | | | | *************************************************************************** ------- Message 13 -- ************************ 9-Jul-88 00:09:46-PDT,3887;000000000000 Return-path: Date: Sat 9 Jul 88 00:08:54-PDT From: MOSIS AGENT Subject: MOSIS 2 MICRON CMOS NWELL RUNS To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <584435334.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: MOSIS is pleased to announce that our 2 micron Nwell runs with VTI have been a great success! We urge you to start transitioning from 3 microns to 2 microns. Please consider the following: 1. TURNAROUND TIME We have reduced the total turn around time from run closing to shipment of parts from 12 to 8 weeks. M84N turnaround was 8.2 weeks, and M85T will be less than 8 weeks. We fully expect to be able to maintain this new average. Turnaround for 2 micron runs is very competitive with 3 micron runs. 2. YIELD Each of our 2 micron runs carries a 35 sq mm yield monitor, and the yield in 1988 has been excellent. We are unable to release actual yield numbers because our fabricators have asked us not to release reports allowing comparison of vendor quality. 3. COST This year, the price for 2 micron and 3 micron TinyChips will be $400, and the price for larger 2 micron chips will be only about 20% higher than the price for 3 micron chips (our new price schedule will be released later this week). ------------------------------------------------------------------------------ MOSIS would also like to make users aware that the following 2 micron information and tools are available: 1. MODELING INFORMATION The process specs against which we buy wafers from VTI are available by sending MOSIS the following request message. REQUEST: INFORMATION TOPIC: SCN20_VTI_SPECS REQUEST: END You can also request VTI corner SPICE and MOSIS models of the VTI process. MOSIS extracts model parameters after each and every run. REQUEST: INFORMATION TOPIC: SCN20_VTI_SPICE, SCN20_VTI_BSIM REQUEST: END 2. TINY CHIP STANDARD PADFRAME A 2 micron TinyChip standard pad frame has been defined which has 40 pads rather than the 3 micron's 28. This frame fixes the die size and bonding pad locations for projects. You must use this standard frame if you want your Tiny Chip parts bonded. The 2 micron's pad frame is called 40PC22X22 and you can obtain information on it by sending MOSIS the following request message. REQUEST: LIBRARY LIBRARY: STD_FRAMES FILES: STD_FRAMES.DOC, 40PC22X22.LIST REQUEST: END 3. CALTECH PADS Chuck Seitz' group at Caltech has designed a full set of 2 micron Nwell pads that can be used in the Tiny Chip Frame or in bigger frames. Chuck is making them available through MOSIS as MAGIC .MAG files. These pads can be obtained by sending MOSIS the following request message. REQUEST: LIBRARY LIBRARY: CIT_TINY_SCN2U_PADS FILES: CIT_TINY_SCN2U_PADS.DOC, GNDPAD.MAG, INPAD.MAG, NULPAD.MAG, OUTPAD.MAG, SCHMITTPAD.MAG, TRIPAD.MAG, VDDPAD.MAG REQUEST: END 4. MS. MOSIS' TINY CHIP STUFFED FRAME. Also available is a 2 micron Tiny Chip stuffed frame in the style of the 3 micron frame. PLEASE NOTE THAT THIS STUFFED FRAME HAS NOT YET BEEN VERIFIED THROUGH FABRICATION. This frame can be obtained by sending MOSIS the following request message. REQUEST: LIBRARY LIBRARY: TINY_SCN2U_PADS FILES: TINY_SCN2U_PADS.DOC, 40PC22X22_STUFFED.CIF REQUEST: END ------------------------------------------------------------------------------ WE WOULD LOVE TO HEAR FROM YOU! Reports on experience with the above pads or any other parts of MOSIS' library would be greatly appreciated. Simply send an attention message to ATTENTION: CELL_LIBRARIAN at MOSIS. ------- Message 12 -- ************************ 23-Jun-88 15:07:15-PDT,1960;000000000000 Return-path: Received: from glacier.stanford.edu by Cheeta.ISI.Edu with INTERNET ; Thu, 23 Jun 88 15:07:08 PDT Received: by glacier.stanford.edu; Thu, 23 Jun 88 15:08:54 PDT Date: Thu, 23 Jun 88 15:08:54 PDT From: Paul Losleben Subject: VLSI Education Conference & Exposition To: mosis-bboard@mosis.edu Cc: losleben@glacier.stanford.edu Folks... The pre-registration deadline for the VLSI Education Conference & Exposition, August 24-26, 1988 in Santa Clara, CA is rapidly approaching. Please send in your registration or contact me if you need additional information. I would also like to know if you have not heard about this meeting. We have advertised it pretty heavily, but the word doesn't always break threshold in the busy schedule most of us seem to always have. Whether you are just starting a VLSI program or would like to find out the latest information about updating your program, this is a meeting you don't want to miss: Hear about the latest in curricula, sources of funds, support services,\ and federal programs. The government is serious about training more VLSI designers and you can be part of the action! Also, get hands-on experience with the latest in equipment, software, etc. Twenty-five companies have agreed to bring their products and best university programs to this meeting. See what SUN, DEC, Apollo, IBM, and HP have to offer in workstations! Try out CAD/CAE tools by Analog Design Tools, CADIC, CASE Technology, DAISY, EDA Systems, EE Software, EPIC Design Technology, Future Net, IBC, Mentor, Meta Software, Silicon Compiler Systems, STAC, United Silicon Structures, and View Logic. Testers by IMS and ISYS will be there. Logic analyzers and other laboratory instruments by Tektronix and HP. Text-books by Addison Wesley and IC Editors. And More... Don't Miss It!!!! Cheers, ...Paul Message 11 -- ************************ 16-Jun-88 00:10:35-PDT,4994;000000000000 Return-path: Date: Thu 16 Jun 88 00:09:42-PDT From: MOSIS AGENT Subject: MOSIS for Advanced Classes To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <582448182.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: Dear MOSIS User, We've recently conducted a survey to determine your fabrication needs for courses beyond the introductory level. As a result of that survey NSF has developed the following plan for allocating funds to advanced courses. SURVEY RESULTS Twenty-three responses were received and they unanimously indicated the need for fabrication support for advanced courses. About half the respondents expressed concern over the feasibility of awarding grants on the basis of peer review because of lead times needed and difficulties in setting peer review criteria. NSF has therefore put in place an allocation plan which uses a formula to determine funding levels. This plan was discussed with several users and was favorably received. It will be implemented on an experimental basis as of July 1, 1988. If the new plan creates problems please contact Al Susskind at NSF. ALLOCATION FORMULA ----------------------------------------------------------------------- I + GN + Q + MC = ALLOCATION ----------------------------------------------------------------------- I = Institutional grant from NSF = $5,000 G = Grant per registered student = $100 per student N = Number of registered students Q = Contribution toward fabrication made by the institution (optional) M = Matching funds provided by NSF (M = Q, but only up to $5,000) C = A constant (C = 1 in the first experiment) ----------------------------------------------------------------------- EXAMPLE CALCULATION Total annual allocation for an institution with three classes a year with 14, 23 and 10 students, where the institution has agreed to provide $5,000 in order to receive $5,000 in matching funds from NSF: --------------------------------------------------------------------- ($5,000 annual institutional allocation) + (($100 * 14 students) + ($100 * 23 students) + ($100*10 students)) + ($5,000 PO from institution) + ($5,000 matching funds from NSF * 1) = $19,700 --------------------------------------------------------------------- HOW TO APPLY Confirmed Enrollment Forms must be submitted for all advanced classes. These forms will be distributed by MOSIS in June 1988 via U.S. mail. The $5,000 annual and $100 per-student grants will be awarded when the the first Confirmed Enrollment Form is received each year. NSF will match additional funds provided by an institution, up to $5,000. The matching fund award will be made when a purchase order is received from an institution, but not until a Confirmed Enrollment Form has been received. IMPORTANT NOTES 1. AWARDS ARE INSTITUTIONAL: The $5,000 institutional allocation is made anually to each participating institution and is independent of the number of advanced courses. A representative from each institution will be responsible for allocating the award among the various instructors and classes. It will be up to the institution to determine who this representative will be. 2. NO FUNDING FOR RESEARCH OR THESES: Budget limitations for class use of MOSIS preclude the very substantial funds requested by some for making chips that arise from research activities, be they covered by thesis or project registrations. Research use of MOSIS is covered under existing NSF research grants. 3. TESTING AND REPORTING REQUIREMENT: As in the case of grants for introductory courses, there must be assurance that a sound plan for chip testing is in place, and reports must be submitted to MOSIS for each fabricated project. 4. CONFIRMED ENROLLMENT FORMS: These forms must indicate ACTUAL enrollment rather than estimated or preliminary figures. 5. NSF RESERVES RIGHT TO MODIFY ALLOCATION SCHEME: Financial forecasting is difficult, therefore NSF reserves the right to modify allocation schemes, tighten budgets or increase budgets as additional cost sharing funds are made available by NSF. 6. BUDGET ISSUES: Budgets may be modified during the year as additional students are registered. The MOSIS budget year will be July to June. 7. DEFINITION OF ADVANCED COURSE: Advanced courses are those having a previous or concurrent VLSI design course as a prerequisite. ------------------------------------------------------------------------------ Al Susskind at NSF is very interested in getting input from you. Please don't hesitate to contact him with comments, problems or any unusual situations that arise. He can be reached at or (202) 357-7853. ------- Message 10 -- ************************ 28-May-88 00:11:11-PDT,1531;000000000000 Return-path: Date: Sat 28 May 88 00:10:26-PDT From: MOSIS AGENT Subject: 2 Micron TinyChips To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <580806626.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: 2 Micron TinyChips In order to allow Users a head start in designing for the 2 micron TinyChip run scheduled for June 16th, we are at this time releasing the 2 micron TinyChip frame specifications. The 2 Micron TinyChip project size including the frame is 2220x2250 microns. You must use the MOSIS 2 micron TinyChip standard frame if you require packaged parts. This frame contains 40 pads. Users can get a CIF plot and text description of this standard frame by sending a message to MOSIS@MOSIS.EDU containing the following text. REQUEST: INFORMATION TOPIC: 40PC22x22.CIF, 40PC22x22.LIST REQUEST: END Though the exact cost has not been determined it will be less than $600.00. 2 micron pads and a stuffed version of the 2 micron TinyChip standard frame will be made available in the near future. 2 Micron TinyChip projects will only be fabricated on 2 Micron SCN runs scheduled approximately once a month. New-Project submissions must contain the following parameters in order to be fabricated as TinyChips. TECHNOLOGY: TINY-SCE (or TINY-SCN) LAMBDA: 1.0 STD-FRAME: 40PC22X22 (if packaged parts are desired) The MOSIS Service ------- ------- Message 9 -- ************************ 21-May-88 00:10:41-PDT,2047;000000000000 Return-path: Date: Sat 21 May 88 00:09:59-PDT From: MOSIS AGENT Subject: MOSIS CLASS ACCOUNTS To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <580201799.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: Dear MOSIS Users, This is to remind you that all 87/88 MOSIS accounts for Class use will expire on 6/30/88. The budget issued under that account can only be used for projects received by MOSIS before 7/1/88. This month MOSIS will distribute application forms for VLSI design classes starting in the Summer of 1988. On this form, please indicate the number of students actually enrolled in introductory classes. NSF will allocate a budget of $200 per registered student. Please note: 1. Forms should not be submitted until actual registration data is known. Please do not send forms with estimated or pre-registration data. 2. Forms must be signed by the department chairperson. 3. Please use the form only for introductory courses. An introductory course is one that does not have a VLSI design prerequisite. NSF does expect to give some support to intermediate and advanced courses, but funds will be allocated in a manner different from that used in supporting introductory courses. An announcement will be made shortly. 4. Please remember that you are required to submit a report to MOSIS for each fabricated project. This must be complied with if you are to receive continued funding. 5. The summer allocation is the first increment of your 88/89 budget. Additional increments will be added each time an eligible course is started. This budget will expire on June 30, 1989. Faculty with unusual problems should contact Al Susskind at or (202) 357-7853. NSF also invites comments and suggestions that will help further the effectiveness of this program. Regards, The MOSIS Service ------- Message 8 -- ************************ 5-May-88 00:10:42-PDT,673;000000000000 Return-path: Date: Thu 5 May 88 00:10:04-PDT From: MOSIS AGENT Subject: NEW MOSIS SCHEDULE To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <578819404.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: In response to requests by MOSIS users, we will be continuing to offer monthly 2um P-well runs. You can obtain a current MOSIS schedule by typing the following: REQUEST: INFO TOPIC: SCHEDULE REQUEST: END The TinyChip option will be only on 2um N-well runs which will also be scheduled once a month. The MOSIS Service ------- Message 7 -- ************************ 26-Apr-88 00:11:30-PDT,2547;000000000000 Return-path: Date: Tue 26 Apr 88 00:10:55-PDT From: MOSIS AGENT Subject: NEW MOSIS PARAMETER - QUANTITY:n To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <578041855.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: MOSIS has implemented a new option which will allow designers to order special quantities of parts. This parameter is QUANTITY: n, where "n" is the total number of parts required (packaged and unpackaged). Please note: 1. If you don't include the QUANTITY parameter in your request to MOSIS you will receive the standard quantity of parts. Standard quantities are indicated in the table below. 2. Quantity requests will no longer be processed through the Special Handling parameter or the ATTENTION mailbox. If you require a non-standard quantity of parts, you must include the QUANTITY parameter in your MOSIS request. 3. If you request a special quantity of parts and don't want them all packaged, please use the SPECIAL-HANDLING parameter to give MOSIS the number of packaged and unpackaged parts. 4. The charge estimate currently provided by MOSIS when your project is accepted into the Fabrication Queue only reflects the default quantity and its associated price. When the run is initiated, the actual charges will be calculated. Please be careful not to exceed your budget by requesting too many additional parts. If this happens you will receive only the default number of parts. =================================================== MAXIMUM PROJECT TECHNOLOGY SIZE (MM) =================================================== MINIMUM QUANTITIES 3u CMOS 2.3 x 3.4 4 4.6 x 6.8 12 6.9 x 6.8 18 7.9 x 9.2 24 --------------------------------------------------- STANDARD QUANTITIES CMOS 2.0u - 30 1.6u - 50 =================================================== For 3 micron submissions, the ordered quantity must be a multiple of 6, except for TinyChips which must be ordered in multiples of 4. 2 and 1.6 micron parts may be ordered in any quantity. ------- Message 6 -- ************************ 22-Apr-88 15:11:37-PDT,1506;000000000001 Return-path: Received: from ucscc by Cheeta.ISI.Edu with INTERNET ; Fri, 22 Apr 88 15:11:29 PDT Received: from azuki.UCSC.edu by ucscc (5.58/1.1) id AA29331; Fri, 22 Apr 88 15:14:06 PDT Received: by azuki.ucsc.edu (3.2/25-eef) id AA02594; Fri, 22 Apr 88 15:06:48 PDT Date: Fri, 22 Apr 88 15:06:48 PDT From: Kevin Karplus Message-Id: <8804222206.AA02594@azuki.ucsc.edu> To: mosis-bboard@mosis.edu Subject: Query about transistor density on TINY-CHIP designs I'd like to gather some statistics about the density of student designs. Almost all classes are using the 3 micron TINY-CHIPs, and many are using the 28PC23x34-stuffed standard frame, so we can simply count transistors to compare layout densities. The transistor count may be affected somewhat by how parallel transistors are counted, so the count for the frame should also be reported. For example, the three chips being fabricated from the winter 88 course here are: #nodes #ntrans #ptrans chip1 1887 2082 1662 chip2 2047 2122 2044 chip3 2392 2120 2137 average 2109 2108 1948 28...stuffed 318 364 416 Since the central part of the frame is 1137 lambda by 1870 lambda, the students have 2,126,190 square lambda. Their transistor densities were 820 ntrans/ mega lambda^2 and 721 ptrans/ mega lambda^2. Are these densities typical of first projects? Kevin Karplus (karplus@azuki.ucsc.edu) Message 5 -- ************************ 30-Mar-88 00:11:22-PST,1249;000000000000 Return-path: Date: Wed 30 Mar 88 00:10:38-PDT From: The MOSIS Service Subject: Information Update To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <575712638.0.UMOSIS@Cheeta.ISI.EDU> Mail-System-Version: Mosis Scalable Design Rules (Rev 6) As a result of feedback from the Design Community regarding Release 6 of the MOSIS Scalable Design Rules, MOSIS is postponing their required use for 1.6 and 2.0 micron submission until August 1, 1988. We apologize for the inconveniences caused by the Design Rule revisions but the changes are necessary in order to economically access a broader range of fabricators and processes. 2 Micron TinyChips The first 2 micron TinyChip run, scheduled for April 7th, is being postponed until June 2nd, 1988. The TinyChip technology for the June 2nd run is TINY-SCN but MOSIS recommends designing in TINY-SCE to allow for a change in Vendors which can result in a change of technologies. Information on the price, size and instructions on how to submit 2 micron TinyChips will be released by the end of next week. Regards, The MOSIS Service ------- Message 4 -- ************************ 25-Mar-88 00:26:52-PST,2215;000000000000 Return-path: Date: Fri 25 Mar 88 00:25:50-PDT From: MOSIS AGENT Subject: Standard Cell Library and Scalable Design Rules To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <575281550.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: MOSIS STANDARD CELL LIBRARY The MOSIS Standard Cell Library (CMOS3REL6) is available to online users by submitting the following message to MOSIS@MOSIS.EDU. REQUEST: LIBRARY LIBRARY: CMOS3REL6 FILE: CMOS3REL6.DOC FILE: CMOS3REL6.CIF Submit the following to receive a table of contents to the MOSIS Library Service. REQUEST: INFORMATION TOPICS: LIBRARY The .DOC files are only introductory files to the Libraries. MOSIS no longer distributes the Cell Documentation. Addison-Wesley has recently published a book entitled 'CMOS3 Cell Library' which contains the complete Cell documentation. You can order the book directly from Addison-Wesley by calling (617) 944-3700 and requesting ISBN 0201-11257-4. MOSIS still distributes the Cell libraries by tape for a distribution fee of $150.00. To request the Library database tape, please contact Christine Tomovich at (213) 822-1511x214 or TOMOVICH@MOSIS.EDU. MOSIS SCALABLE DESIGN RULES (Rev 6) This is an amendment to the Liaison message sent regarding the release of Revision 6 of the Scalable Design Rules (not to be confused with release 6 of the CMOSREL6 Cell Library). The following summarizes when SCMOS designs need to be updated from Rev5 to Rev6: If your design is to go on a 1.2 micron run, you have to abide by Rev6. If your design is to go on a 1.6 micron run, you have to abide by Rev6 rules by April 28. If your design is to go on a 2.0 micron run, you have to abide by Rev6 rules by April 21. If your design is to go on a 3.0 micron run, AND you do NOT want to shrink your design later, you CAN remain with the Rev5 rules. Of course, if you want to shrink a 3.0 micron design, you will need to abide by Rev6. Regards, The MOSIS Service ------- Message 3 -- ************************ 12-Mar-88 00:10:31-PST,2596;000000000000 Return-path: Date: Sat 12 Mar 88 00:09:45-PDT From: MOSIS AGENT Subject: MOSIS SUPPORT FOR ADVANCED EDUCATION To: MOSIS_LIAISONS_AND_USERS: ; Reply-To: vlsi.attn@a.isi.edu Message-ID: <574157385.0.XMOSIS@Cheeta.ISI.Edu> Mail-System-Version: Dear MOSIS Users: To help in determining the required MOSIS support for academic activities, the National Science Foundation and DARPA ask you to reply to the set of questions listed below. Before you send in your answers, please consult with your colleagues, so that we obtain a complete picture of the needs arising from academic activities. SUPPORT FOR INTRODUCTORY COURSES: Presently, fabrication support is given to all universities in connection with introductory courses, both graduate and undergraduate. Funds are allocated on the basis of actual class registration; the current support rate is $200 per student, so that a Tiny Chip can be fabricated for every pair of students. It is required that adequate plans exist for testing completed chips. SUPPORT FOR INTERMEDIATE AND ADVANCED COURSES: The above procedure fails to cover design activities in advanced courses and projects. In order to make appropriate plans, we need to estimate the nature and magnitude of the the needs that are not covered by the present allocations. We ask you to tell us: 1. Is there a need for intermediate and advanced level VLSI design instruction at your institution? If so, A. How may courses per calendar year? B. How many students in each? C. How many designs are to be submitted in each? D. What will be the chip size and the feature size? 2. If cost sharing is necessary, what percentage could you obtain from sources such as department, dean, university, etc.? 3. If budget allocations were based on some form of peer review, A. Would you be willing to serve as a reviewer? B. Would you be able to submit a letter proposal (3 pages or so) at least three months before you need a decision? 4. If neither cost sharing nor peer review seem feasible to you, what procedure do you recommend for distributing limited funds? Please send your response as quickly as possible (at least within 10 days) to and . NSF and DARPA will communicate with you as soon as the community reaction is known and plans can be made. Thank you for your help. ------- Message 2 -- ************************ 10-Mar-88 10:08:23-PST,5447;000000000000 Return-path: Received: from vlsi-cad.isi.edu by Cheeta.ISI.Edu with INTERNET ; Thu, 10 Mar 88 10:08:15 PST Posted-Date: Thu, 10 Mar 88 10:06:54 PST Message-Id: <8803101806.AA10172@vlsi-cad.isi.edu> Received: from LOCALHOST by vlsi-cad.isi.edu (5.54/5.51) id AA10172; Thu, 10 Mar 88 10:06:59 PST To: mosis-bboard@cheeta.isi.edu Cc: delatorre@vlsi-cad.isi.edu Subject: Recent attention messages Date: Thu, 10 Mar 88 10:06:54 PST From: delatorr@vlsi-cad.isi.edu Message #1 Dear MOSIS Users: This is to announce MOSIS' first experimental run with lambda=0.6 microns. The run will be fabricated by HPNID using their CMOS34 Nwell process. Design rules are the newly announced Rev6 of the MOSIS scalable design rules. The run will close on or about Tuesday, April 19. The payload is 1.4 by 1.4 cm and only a finite number of projects can be supported. If you want to get something on this run you will have to book space in advance by contacting Carl Service at or (213) 822-1511. If you send the following messages to you will receive (1) the process parameters against which wafers will be bought, (2) general parametric information needed by designers, and (3) PRELIMINARY BSIM parameters. REQUEST: INFORMATION TOPIC: SCN12_HP_SPECS, SCN12_HP_BSIM REQUEST: END REQUEST: INFORMATION TOPIC: SCN12_HP_SPECS, SCN12_HP_BSIM REQUEST: END Forwarded message #2: Dear MOSIS Users: We are now releasing Revision 6 of the Scalable Design Rules. The changes will allow MOSIS to access a larger fabricator base for the feature sizes that we now support (lambda equal to 1.5, 1.0, and 0.8 microns) and new fabricators for yet smaller feature sizes (lambda equal to 0.6 microns). The changes also allow for the new 2 micron double poly and double metal process which will be available by late June. Note the the last CBPE run is scheduled for March 17th. Additional information regarding the SC*E (*:{P,N,G or E}) technology will be released within the next month. The differences between Rev 5 and Rev 6 of the design rules are as follows: 1. Minimum active width is now 3 as opposed to 2 lambda. 2. Minimum active overlap of poly is now 3 as opposed to 2 lambda. 3. Minimum well width is now 10 as opposed to 9 lambda. 4. Feature edges on lambda equal to or smaller than 1.0 micron runs must be on half lambda grids. Feature edges on lambda equal to 1.5 micron runs must be on a lambda grid except for metals which can be on a half lambda grid. 5. A new page has been added with the PRELIMINAY rules for the electrode (second poly) layer. CIF files showing Revision 6 design rules may be obtained by sending this message to : REQUEST: INFORMATION TOPIC: SCRULES6 REQUEST: END A Magic technology file incorporating the Revision 6 design rules may be obtained by sending this message to MOSIS (a Magic technology file for the double poly process is not available at this time): REQUEST: INFORMATION TOPIC: SCMOS.TECH REQUEST: END Forwarded message #3: Dear MOSIS User: A MOSIS Bulletin Board has been set up for the convenience of MOSIS users. You are encouraged to request this file from MOSIS and to submit any announcements or information that might be of interest to other users. These might include announcements that have appeared on a local BBoard or user interchanges that offer enlightenment on subjects of general interest as well as suggestions, explanations, queries or quandries from your experience that might be of general interest to MOSIS users. To get a copy of this new BBoard (still in its inception), type the following: REQUEST: INFO TOPIC: MOSIS-BBOARD REQUEST: END MOSIS is putting copies of announcements on various topics that are sent to MOSIS Liaisons, in the hope that the, usually very important (!) information will receive a wide audience. NEW MOSIS OPTIONS The following new options should be used when first submitting your project, (i.e., in your NEW-PROJECT or ONE-STEP SUBMISSION templates to MOSIS). For more information on the use of these options, request the following file: REQUEST: INFORMATION TOPIC: TEMPLATES REQUEST: END 1) MOSIS is now offering a new REQUEST parameter, called FOUNDRY, which lets you request a specific foundry for fabrication of your project. To see a list of MOSIS foundries, type the following: REQUEST: INFORMATION TOPIC: FOUNDRY REQUEST: END 2) The second new REQUEST parameter is called OPTIONS and takes two arguments - SHARE and SUBSTRATE. (The SHARE parameter has been discussed in detail in the last Liaison Announcement which is posted on BBoard.) SHARE - User is willing to share the die (and the standard quantity and cost) with another project from the same organization. This may be requested but if there are no others from the same organization, your project will be packed in its own chip and you will be charged for the full complement of parts. (The default is NOSHARE). SUBSTRATE - User wants package bonding to include a substrate connection on the standard pin for that package. (The default is NOSUBSTRATE.) The MOSIS Service Message 1 -- ************************ 11-Feb-88 16:39:13-PST,3545;000000000001 Return-path: <@A.ISI.EDU:DELATORRE@Cheeta.ISI.Edu> Received: from A.ISI.EDU by Cheeta.ISI.Edu with INTERNET ; Thu, 11 Feb 88 16:39:07 PST Received: from Cheeta.ISI.Edu by a.isi.edu with TCP; Thu 11 Feb 88 19:38:02-EST Date: Thu 11 Feb 88 16:38:35-PDT From: DELATORRE@Cheeta.ISI.Edu Subject: Recent Announcement messages To: MOSIS-BBOARD@C.ISI.EDU Message-ID: <571624715.0.DELATORRE@CHEETA.ISI.EDU> Mail-System-Version: New Standard Packages Offered In addition to the 84 lead PGA (pin grid array) packages, MOSIS now offers as standard packages a 108 and 132 lead PGA package. The 108 has a 0.450" cavity (topside) and is 1.200" square with the pins arranged on a 12 x 12 pin grid at 0.1" centers. The 132 is available in two cavity sizes. The first has a 0.350" cavity and the second a 0.450" cavity (topside). Both are 1.400" square packages and have the same bonding finger to pin mapping. The pins of these packages are arranged on a 14 x 14 pin grid at 0.1" centers. The 108 and 132 packages have three full rows of pins around the outside. A description of these new packages can be obtained by sending the following message to MOSIS@MOSIS.EDU: REQUEST: INFORMATION TOPIC: 108PIN-LAYOUT, 132PIN-LAYOUT REQUEST: END Packing of User Projects In preparing a bonding diagram, MOSIS finds all pads that are at least 70 x 70 microns and are within 400 microns of the project edge. If you have pads in the interior of your project (probably due to multiple pad frames), then you must request unpackaged parts (by using the PADS:0 parameter). MOSIS will then send you unbonded parts. If you do not include PADS:0, your multi-project chip will be bonded as if it were a single project; pads on the outside will be bonded and those on the interior will be ignored. MOSIS can pack up to four user projects from the same organization into one chip. Projects packed in this way will be bonded separately. If you choose this MOSIS option, called "SHARE", you will receive the standard quantity of parts divided by the number of projects in a chip, e.g., if you are packed in a small chip (standard quantity of 12) with two other projects, you would receive four packaged parts. This feature can be requested by including an OPTIONS parameter called 'SHARE' in your NEW-PROJECT request as follows: OPTIONS: SHARE Projects packed in this way will be bonded separately. For further information, contact the MOSIS User Liaison, Sam Delatorre. TINY CHIP PAD FRAME A MOSIS message, dated 12.31.87, stated that users should expect to get design rule errors in the stuffed TinyChip frame (and pad drivers). These Magic DRC violations errors were innocuous but were confusing to users. They have now been eliminated. To obtain a new CIF file, send a REQUEST message to MOSIS@MOSIS.EDU in the following format: REQUEST: LIBRARY LIBRARY: TINY_SCP3U_PADS FILE: 28PC23X34_STUFFED.CIF REQUEST: END ------- MOSIS has discovered an error in the CMOS3 Cell Library, Release 5. Release 4 did not have this error. Cell 9320 should have had metal2 and via along with glass and metal1. This omission affects all the cells that reference 9320, e.g. all VDD and Ground pads. If you have requested the CMOS3 Cell Library via the net, please request it again to obtain the corrected version. We regret any inconvenience this may have caused you. The MOSIS Service ------- [END OF MOSIS-BBOARD]