SAMPLE MOSIS FORMS (EXCERPT FROM THE MOSIS USER MANUAL, CHAPTER 13, RELEASE 3.1.) 13. Reference Section This section contains samples of MOSIS administrative forms, schedules, request message templates, and messages, as well as more technical documents such as SPICE decks and electrical parameters. Many of these forms are periodically updated. SINCE IT IS IMPORTANT THAT YOU HAVE CURRENT COPIES OF THESE SAMPLE FORMS, MOSIS HAS THE MOST RECENT VERSIONS ONLINE. HARD COPIES CAN ALSO BE MAILED TO YOU UPON REQUEST. Copies of the MOSIS Customer Agreement Form and applications for DARPA and NSF sponsored use should be requested directly from the MOSIS stafF. 13.1. What is MOSIS? - General Information MOSIS SERVICE PRICE SCHEDULE (SAMPLE) (prices valid through June 30, 1989.) (REGULARLY-SCHEDULED RUNS)* ----------------------------------------------------------------------------- |TECHNOLOGY MAXIMUM PROJECT MINIMUM TOTAL ADDITIONAL | | SIZE (MM) QUANTITIES PRICE PARTS | ----------------------------------------------------------------------------- |PRICED PER PROJECT: | | | |CMOS 2.3 x 3.4** 4 $ 400 N/A | |3.0um 4.6 x 6.8 12 $ 2,200 $ 960 (6 parts)| | 6.9 x 6.8 18 $ 5,000 $ 1,440 | | 7.9 x 9.2 24 $ 10,000 $ 2,160 | | | |CMOS 2.22 x 2.25** 4 $ 400 N/A | |2.0um 4.6 x 6.8 12 $ 2,500 $ 1,440 (8 parts)| | 6.9 x 6.8 24 $ 5,900 $ 1,760 | | 7.9 x 9.2 32 $ 11,800 $ 2,560 | ----------------------------------------------------------------------------- | | | (ON-DEMAND RUNS)* | ----------------------------------------------------------------------------- | PRICE PER MINIMUM PACKAGING PACKAGING | |TECHNOLOGY SQ MM LOT COST / LOT COST / PART| ----------------------------------------------------------------------------- |PRICED PER SQUARE MILLIMETER: | | | | CMOS | | 1.6um $ 520 50 $2,000 $40 | | | | 1.2um $ 750 50 $2,000 $40 | | | |PLEASE DO YOUR 1.6UM AND 1.2UM PROJECT AREA CALCULATION IN MICRONS, | |converting the result into square millimeters which you have carried out | |to three decimal places. The price should be rounded to the nearest | |dollar.Sample cost calculation for purchasing 50 packaged 1.6 micron parts:| |(4286um) * (2189um) = 9.382 sq mm; [(9.382 sq mm) * ($520/sq mm)] + | |$2,000 = $6,879. | | | |A TINYCHIP PAD FRAME with preset pad locations is available for the 1.6 | |micron TinyChip die size; the 1.2 micron size is in development. The | |TinyChip die size for both 1.6 and 1.2 micron is 2.22 x 2.25 millimeters. | ----------------------------------------------------------------------------- See Fabrication Schedule *These are TinyChips and certain restrictions apply. See Fabrication Schedule for Details. PLACING AN ORDER: The first time you place an order with MOSIS, please fill out two copies of our customer agreement (copies available from MOSIS). BOTH copies of the agreement should be signed by your authorized representative and returned to us. We will sign them and return one signed original to you. MOSIS must have a purchase order before proceeding with fabrication. Please send the purchase order to: KATHLEEN FRY, THE MOSIS SERVICE, USC/ INFORMATION SCIENCES INSTITUTE, 4676 ADMIRALTY WAY, MARINA DEL REY, CA 90292-6695. Tapes should also be sent to this address. Payment terms are net 30 days. Pricing includes shipping costs but not sales tax. Parts will be sent to the shipping address listed on the purchase order so please make sure this address is correct. A 20% price discount is available to educational institutions. This discount is also available if your project is part of work performed under a current government contract. To receive the government contract discount, please include the following information on your purchase order: 1) Contract Number, 2) Funding Agency, 3) Program Manager, 4) Contract Expiration Date. PLEASE NOTE: DISCOUNTS ARE NOT AVAILABLE FOR TINYCHIPs, 1.6 OR 1.2 MICRON TECHNOLOGIES. MOSIS accepts designs in CIF, GDS II and MEBES format. You may send your layout geometry by electronic mail (instructions are outlined in the MOSIS User Manual) or on a magnetic tape via regular mail. Magnetic tapes must be accompanied by a completed MOSIS Project Submission Form (available from MOSIS). TAPES AND ACCOMPANYING PAPERWORK MUST BE SENT TO KATHLEEN FRY. PROJECT SIZE: MOSIS will add scribe lanes and other overhead to the submitted geometry for all technologies. The maximum project sizes listed for 2.0 and 3.0 micron CMOS TinyChip refer to actual design area. ASSEMBLY: Circuits will either be bonded per your instructions or MOSIS will provide a diagram showing how bonding was done. Lids will be taped unless you request hermetic sealing. 3.0 AND 2.0 MICRON TECHNOLOGIES: The total price for these projects includes packaging. You may request unpackaged parts or provide your own packages, however the price does not change for these options. 1.6 and 1.2 MICRON TECHNOLOGIES: The price per square millimeter for these projects does NOT include packaging. Packaging is available at $40 per packaged part. If you supply your own packages, there is a charge of $25 per packaged part and you must provide MOSIS with package lids and a bonding diagram. These must be received prior to fabrication. SPECIAL PACKAGING FOR 1.6 and 1.2 MICRON PROJECTS: If the pin count or performance of the packages stocked by MOSIS is inadequate for your application, please send a note to Wes Hansford in an ATTENTION message. This note should specify your special requirements. Our 1.6/1.2 micron fabricator stocks a large variety of characterized packages for their internal high performance and high pin-out applications. ADDITIONAL PARTS AND PRODUCTION ORDERS: If you wish to order more than the minimum quantity of 2.0 or 3.0 micron CMOS parts, please request the desired additional parts in your initial order. These extra parts must be ordered, and are priced, in increments of six (for CMOS 3.0um) and eight (for CMOS 2.0um). To place an order for an entire wafer lot of a single die type, send a note to Cesar Pina in an ATTENTION message. Be sure to include all specifications since these jobs will be quoted an individual basis. ADDITIONAL INFORMATION: For further information, contact the following MOSIS staff at (213) 822-1511 or by network mail. Order Information: Kathleen Fry FRY@MOSIS.EDU General Information: Sam Delatorre DELATORRE@MOSIS.EDU Documentation Requests: Christine Tomovich TOMOVICH@MOSIS.EDU THE MOSIS SERVICE FABRICATION SCHEDULE (SAMPLE) (February, 1988 - June, 1989) ======================================================================== DATE CLOSED CODE FEATURE SIZE TECHNOLOGY ======================================================================== ------------------------------------------------------------------------ THU: DEC 1 D 2.0u CMOS N-WELL THU: DEC 8 A 3.0u CMOS P-WELL THU: DEC 15 C 2.0u CMOS P-WELL DOUBLE POLY THU: DEC 22 THU: DEC 29 D 2.0u CMOS N-WELL ------------------------------------------------------------------------ THU: JAN 5 A 3.0u CMOS P-WELL THU: JAN 12 C 2.0u CMOS P-WELL DOUBLE POLY THU: JAN 19 THU: JAN 26 D 2.0u CMOS N-WELL ------------------------------------------------------------------------ THU: FEB 2 A 3.0u CMOS P-WELL THU: FEB 9 C 2.0u CMOS P-WELL DOUBLE POLY THU: FEB 16 THU: FEB 23 D 2.0u CMOS N-WELL ------------------------------------------------------------------------ THU: MAR 2 A 3.0u CMOS P-WELL THU: MAR 9 C 2.0u CMOS P-WELL DOUBLE POLY THU: MAR 16 THU: MAR 23 D 2.0u CMOS N-WELL THU: MAR 30 ------------------------------------------------------------------------ THU: APR 6 C 2.0u CMOS P-WELL DOUBLE POLY THU: APR 13 A 3.0u CMOS P-WELL THU: APR 20 D 2.0u CMOS N-WELL THU: APR 27 ------------------------------------------------------------------------ THU: MAY 4 C 2.0u CMOS P-WELL DOUBLE POLY THU: MAY 11 A 3.0u CMOS P-WELL THU: MAY 18 D 2.0u CMOS N-WELL THU: MAY 25 ------------------------------------------------------------------------ THU: JUN 1 C 2.0u CMOS P-WELL DOUBLE POLY THU: JUN 8 THU: JUN 15 D 2.0u CMOS N-WELL THU: JUN 22 A 3.0u CMOS P-WELL THU: JUN 29 C 2.0u CMOS P-WELL DOUBLE POLY ------------------------------------------------------------------------ TINYCHIPS may be submitted to all runs on this schedule. 2.0 MICRON DOUBLE POLY RUNS support both double and single poly designs. SCHEDULE CHANGES: MOSIS will make every attempt to keep this schedule, however, changes may be unavoidable. For schedule confirmation, send a message to MOSIS@MOSIS.EDU with the following text: REQUEST: INFORMATION TOPIC: SCHEDULE REQUEST: END TO PARTICIPATE IN ON-DEMAND 1.6 and 1.2 RETICLE-BASED RUNS: MOSIS 1.2 micron N-well (lambda=0.6 microns) and 1.6 micron N-well runs (lambda=0.8 microns) are initiated on-demand, which means that MOSIS will start a run only after enough projects have been received to fill the run. The following rules make it possible for MOSIS to combine designs of different sizes, from different organizations onto a 5X reticle set which defines a 14 x 14 mm die. 1. SPACE ON 1.2U AND 1.6U RUNS MUST BE RESERVED. This can be done by sending a note to Terri Lewis in an ATTENTION message. The message should indicate: A. your desire to get on either a 1.6 or 1.2 micron run; B. the width and height in millimeters of the space you would like to reserve; C. an estimate of the date you will submit your project. 2. MOSIS WILL SCHEDULE YOUR RUN when enough reservations have been received. We will contact you at that time to confirm your project size and give you the run closing date. 3. MOSIS WILL CHARGE YOU OR YOUR SPONSOR when the run is scheduled. There will be no refunds once the final negotiations are complete and your run has been scheduled. PRODUCTION ORDERS: To place an order for an entire wafer lot of a single die type, contact Cesar Pina at (213) 822-1511, or via an ATTENTION message. If you are sending a message, be sure to include all specifications since these jobs will be quoted on an individual basis. PROJECT SUBMISSION: Geometry sent via electronic mail must be received and accepted by MOSIS before 7:00 a.m. on the day the run closes. Geometry on magnetic tape must be received and accepted by MOSIS at least 48 hours before the run closes. Please allow plenty of time when you submit a project; MOSIS cannot delay a run to wait for late designs. ONLINE USERS: Please check the following 'TABLE OF TECHNOLOGY CODES' for the MOSIS technologies that are acceptable on a given run. For TinyChip submissions, you MUST use a "TINY" technology, e.g., "TINY-SCP". You must also put in a 'STD-FRAME' request for the MOSIS 28PC23x34 Standard Frame (for 3.0um TinyChip), or 40PC22X22 (for 2.0um TinyChip). Standard Frames, which have bonding pads at specific locations, are required if you desire TinyChip packaged parts. To request unpackaged parts, make sure to include the parameter 'PADS: 0' in your new project request. TABLE OF TECHNOLOGY CODES ======================================================== CODE MOSIS DESIGN TECHNOLOGIES LAMBDA ======================================================== A CBPM none SCP 1.5u SCG 1.5u SCE 1.5u --------------------------------------------------- B CBPE none (none scheduled) CBP none --------------------------------------------------- C SCP 1.0u SCG 1.0u SCE 1.0u SCPE 1.0u SCGE 1.0u SCEE 1.0u --------------------------------------------------- D SCN 1.0u SCG 1.0u SCE 1.0u -------------------------------------------------- E SCN 0.8u (on-demand) SCG 0.8u SCE 0.8u -------------------------------------------------- F SCN 0.6u (on-demand) SCG 0.6u SCE 0.6u ======================================================== TECHNOLOGY DESCRIPTIONS 3 Micron CMOS ------------------------------------------------------------------------- CBPM: CMOS/Bulk P-well (double metal) FEATURE SIZE: 3 microns only LAMBDA: none REFERENCES: MOSIS 3 Micron P-well CMOS Design Rules, November 1985 (Revision 2) CMOS3 Cell Library, May 1986, (Release 6.1); NOTE: The CMOS3 Cell Library is for CBPM only. Scalable CMOS -------------------------------------------------------------------------- SCP: Scalable CMOS, P-well SCN: Scalable CMOS, N-well SCG: Scalable CMOS, Generic Well SCE: Scalable CMOS, Either Well SCPE: Scalable CMOS, P-well double poly SCNE: Scalable CMOS, N-well double poly SCGE: Scalable CMOS, Generic Well, double poly SCEE: Scalable CMOS, Either Well, double poly FEATURE SIZE: 1.2 to 3.0 microns LAMBDA: .6 to 1.5 microns REFERENCE: MOSIS Scalable and Generic CMOS Design Rules, February, 1988 (Revision 6) CMOSN Cell Library Scalable 2.0 and 1.2 Micron CMOS/Bulk Cell Library (Release 1.0) FS112988 MOSIS TOPICS (SAMPLE) CATEGORY TOPIC-NAME TOPIC ------------------------------------------------------------------------ I. INTRODUCTION - WHAT IS MOSIS? GENERAL Brief description of the MOSIS Service PRICE_SCHED Price List SCHEDULE Fabrication schedule/run-closing deadlines SUBCONTRACTORS MOSIS subcontractors TEMPLATES Various MOSIS REQUEST templates II. GETTING STARTED GETTING_STARTED Describes how to become an authorized MOSIS User. III. COMMUNICATING WITH MOSIS A. PROJECT SUBMISSION PROJ_SUB For offline and network users. For online users, includes mail size limits, address syntax, discussion of networks. B. MOSIS MAIL SYSTEM MOSIS_MAIL Describes the MOSIS online request message system; includes project submission sequence and list of MOSIS requests. C. GDSII and CIF CONVENTIONS GDSII_CIF File transmission conventions - also CIF-FTP and CIF-CHECKSUM information and diffences between CIF2.0 and MOSIS' variant, CIF 2.7.1. IV. DESIGNING YOUR CHIP A. CHIP SIZES AND QUANTITIES CHIP_SZES_QUANTS Describes MOSIS chip sizes and quantities. B. DESIGN RULES MOSIS_BSIM BSIM parameters taken from different MOSIS 2.0 and 1.6 micron runs. From mosisout@vlsif.isi.edu Tue Jul 10 12:46:00 1990 Return-Path: Received: from kuhub.cc.ukans.edu by erlang.tisl.ukans.edu (4.0/1.0a) id AA04896; Tue, 10 Jul 90 12:45:58 CDT Received: from vlsif.isi.edu by kuhub.cc.ukans.edu; Tue, 10 Jul 90 12:41 CDT Received: by vlsif.isi.edu (5.61/5.61) id AA08260; Tue, 10 Jul 90 10:37:28 -0700 Date: 10 July 1990 10:27:28 From: The MOSIS System Subject: Part 2:Topic: SAMPLE_FORMS To: evans@erlang.tisl.ukans.edu Message-Id: <9007101737.AA08260@vlsif.isi.edu> Posted-Date: 10 July 1990 10:27:28 X-Envelope-To: evans@erlang.tisl.ukans.edu Status: R PWC3RULES2 MOSIS Nonscalable CMOS design rules (Rev2). PWC3RULES2_LIST Listing of separate nonscalable design rule pages. SCRULES6 MOSIS Scalable CMOS design rules (Rev6). SCRULES_HISTORY History of design rule changes; listing of separate design rule pages. VENDOR_SPECS MOSIS 3.0, 2.0 and 1.6 micron electrical specifications for all CMOS double metal vendors. VENDOR_SPICE Corner SPICE from MOSIS fabricators. C. TECHNOLOGY CMOSBK Scalable and Nonscalable CMOS: includes discussion of electrical and SPICE parameters, geometry layers/grids. FOUNDRY List of foundries (for designers who want to design for a specific foundry). MAGIC Discussion of Magic Technology files for SCMOS and CBPM3u. SCMOS_MANUAL Magic Technology Manual (Scalable CMOS) TINYCHIP Describes MOSIS' smallest chip size and tells you how to submit your projects. D. LIBRARIES LIB_GEN General discussion of MOSIS Libraries, both Supported and Unsupported. LIBDIRECTORY Files currently available through the LIBRARY request (updated daily). LIBRARY Introduction to MOSIS cell libraries. E. VLSI CAD TOOLS VLSICAD_TOOLS Very general overview of available CAD tools for use with MOSIS. MAGIC Notes on Magic technology files; description of filenames, e.g., scmos.tech. V. FABRICATING YOUR CHIP 84PIN_LAYOUT Layout of the MOSIS-supplied 84 pin grid array package. 108PIN_LAYOUT Layout of the 108-pin-grid-array package supplied by MOSIS. 132PIN_LAYOUT Layout of the 132-pin-grid-array package supplied by MOSIS. PACK_BOND General information on packaging and bonding; includes Standard and Nonstandard Frames. SPECIAL_REQ Lists various special requests, e.g., no bonding, refabrication of your chip. ALL-RUNS Status of all runs, including those already completely distributed to designers. run.STS Status of the run named "run" (the name of the run (wafer lot) for a particular fabricated device is the first four characters of its "Fab-ID", e.g., "M11X"). STATUS Status of current runs, i.e., those runs not completely distributed to designers. VI. OTHER SERVICES FUNCTIONAL_SCREEN Wafer screening for quantity production. FUSION Short description of this automatic placement and routing service. FUSION_MANUAL Complete FUSION document. VII. TESTING RUN.PRM The electrical parameters for the run named "run" (e.g., M11X). (The name of the run (wafer lot) for a particular fabricated device is the first four characters of its "Fab-ID", e.g., "M11X"). PROCESS_MONITOR Description of MOSIS' process monitor. VIII. OTHER TOPICS ANNOUNCEMENTS Copies of current MOSIS announcements. MOSIS_BBOARD Instructions on how to send mail to and receive copies of the MOSIS BBoard. MOSIS_GLOSSARY Contains a list of terms and their descriptions as used by the MOSIS Service. DIRECTORY Information files currently available through the INFORMATION request (updated daily). PCB Information on PCB fab. TOPICS This information. USER_MANUAL Information on all aspects of the MOSIS Service. To request any of the above information, send an Internet message to MOSIS@MOSIS.EDU including the following lines in the body: REQUEST: INFORMATION TOPIC: Topic-name, Topic-name, Topic-name, etc. REQUEST: END where "Topic-name" is one of the names given above. MOSIS will then mail the topic(s) information to the sender of the request. ct51088 MOSIS SUBCONTRACTORS (SAMPLE) Dupont Photomask Halycon Microelectronics, Inc. Hewlett Packard International Microelectronics Products (IMP) Master Images, Inc. Micro Mask, Inc. National Semiconductor Corp. Norsk Engineering, Inc. Orbit Semiconductor, Inc. Pantronix Corporation Photo Sciences, Inc. Rockwell International United Technologies Microelectronics Center (UTMC) VLSI Technology, Inc. 13.2. Getting Started University of Southern California/Information Sciences Institute MOSIS CUSTOMER AGREEMENT (SAMPLE) This Agreement is made and entered into by and between the University of Southern California, a California corporation, acting through its Information Sciences Institute, located at 4676 Admiralty Way, Marina del Rey, California, 90292-6695 (hereinafter referred to as "USC/ISI"), and: Customer/Organization Department Street Address City, State and Zip Code Area Code and Phone Number (HEREINAFTER referred to as "Customer".) RECITALS WHEREAS, USC/ISI has developed a computerized system to provide integrated circuit fabrication services through third party vendors to commercial users (hereinafter referred to as "MOSIS") and, WHEREAS, Customer desires to enter into this Agreement with USC/ISI for the provision of such services, NOW, THEREFORE, in consideration of the covenants and conditions hereinafter contained, the parties agree as follows: 1. TERM a. Customer shall submit to USC/ISI a purchase order(s) for MOSIS services which shall be subject to written acceptance by USC/ISI and be effective upon such acceptance; such purchase order(s) shall specify the dollar amount of services desired by Customer. 2. SERVICE a. USC/ISI shall utilize the MOSIS service to: (1) check that syntax is correct (but not including design validation) and deliver wafers or a set of bonded and packaged integrated circuits (chips) containing the design as submitted by Customer and (2) provide fabrication of prototype quantities of integrated circuits. b. Circuits shall either be bonded per Customer instructions or Customer shall be provided with a diagram showing how bonding was done. Individual parts shall be inspected but shall not be tested. Spice parameters, which have been extracted from USC/ISI devices on the same run, will be provided to Customer. c. Each fabrication run shall have passed the vendors' quality assurance and shall have been tested to ensure that it has conformed to MOSIS fabrication requirements. Details are technology specific and are available on request. 3. RATES a. Rates shall be as set forth in Attachment A ("Price Schedule"). 4. NO WARRANTIES a. Customer expressly recognizes that the ability of the MOSIS services to provide working parts in a consistent manner is speculative. USC/ISI expressly disclaims any warranty that use of the MOSIS services will provide working or usable parts, and Customer is not relying on any warranty or on any understanding or belief that use of the MOSIS services will provide working or usable parts, and understands and accepts that each fabrication using the MOSIS services provided by USC/ISI shall be on "as is" basis. USC/ISI EXPRESSLY DISCLAIMS ALL IMPLIED WARRANTIES AND THERE ARE NO WARRANTIES THAT EXTEND BEYOND THE DESCRIPTION ON THE FACE HEREOF. USC/ISI SHALL NOT BE RESPONSIBLE FOR ANY DIRECT, INDIRECT INCIDENTAL OR CONSEQUENTIAL DAMAGES CUSTOMER MAY SUFFER RELATING TO THE USE OF ANY MOSIS FABRICATION. USC/ISI MAKES NO WARRANTIES, EITHER EXPRESS OR IMPLIED, AS TO ANY MATTER WHATSOEVER, INCLUDING WITHOUT LIMITATION, THE CONDITION OF THE FABRICATION, ITS MERCHANTABILITY OR ITS FITNESS FOR ANY PARTICULAR PURPOSE. USC/ISI shall not be liable for, and Customer hereby assumes the risk of, and will release and forever discharge USC/ISI, its agents, officers, and employees, either in their individual capacities or by reason of their relationship to USC/ISI, in respect to any expense, claim, liability, loss or damage (including any incidental or consequential damage) either direct or indirect whether incurred, made or suffered by Customer or by third parties, in connection with or in any way arising out of the furnishing or use of the MOSIS fabrication. In any event, USC/ISI's liability to Customer on any ground shall not exceed a sum equal to the fee paid to USC/ISI by Customer hereunder. 5. CONFIDENTIALITY AND PROPRIETARY RIGHTS a. Both parties recognize that the information exchanged hereunder is of a confidential and proprietary nature. USC/ISI shall maintain all such confidential and proprietary information provided by Customer hereunder in confidence. As this Agreement envisions transfer of such information to third party vendors, USC/ISI agrees that it shall require each such vendor to execute a Nondisclosure Agreement which shall extend to the information provided by Customer and which shall provide for an obligation of confidentiality commensurate with the obligation called for in this Agreement. USC/ISI further agrees that it shall treat Customer's confidential and proprietary information with the same care with which it treats its own confidential and proprietary information. The obligation of confidentiality shall extend for a period of five (5) years from the date of disclosure and, to that extent, shall survive termination of this Agreement. b. Customer recognizes, however, that because of circumstances beyond the direct control of USC/ISI, there may be disclosure of the material to third parties. USC/ISI, however, will not be liable for any negligent disclosure of Customer's material by any USC/ISI employee or agent, or by any third party vendor, except for as otherwise provided for herein. c. Notwithstanding the provisions of paragraph 5 (a), USC/ISI shall not be obligated with respect to any information which: (i) at the time of disclosure has been published or otherwise is in the public domain, (ii) after disclosure is published or otherwise becomes a part of the public domain through no fault of USC/ISI, or (iii) is or has been rightfully disclosed to USC/ISI, by a party that has no obligation to Customer directly or indirectly with respect thereto to the extent that such third party disclosure is received by USC/ISI without an obligation of confidentiality. d. Customer specifically agrees that it shall not disclose any material which may be considered proprietary or confidential material of USC/ISI or of vendors to any third parties. Proprietary material shall include but not be limited to, proprietary vendor information such as yield and parametric data, whether it was provided to Customers or extracted by them. e. Customer shall be furnished with a list of vendors; if Customer wishes, Customer shall have the opportunity to prohibit certain vendors from working on its fabrication. Vendors shall have been provided with a list of Customers and shall also have the opportunity to refuse to work on the fabrications of certain Customers. f. Nothing in this Agreement shall serve to convey to USC/ISI any proprietary rights in any design submitted by Customer pursuant to this Agreement or in any semi-conductor chip fabricated therefrom. All rights, titles and interests in and to designs for integrated circuits submitted by Customer pursuant to this Agreement as well as all mask works fixed or embodied in any semi-conductor chip fabricated pursuant to this Agreement shall belong entirely to Customer to the extent that Customer has such rights, titles and interests prior to submission to USC/ISI. USC/ISI shall not be responsible for securing any form of statutory protection, whether by patent, copyright, registration under the Semi-Conductor Chip Protection Act or otherwise. g. Customer Customer agrees that it would be difficult and impractical, if not impossible to calculate the dollar amount of damages which might result from the disclosure by USC/ISI, or any employee or agent thereof, or by any third party of Customer's thereof, of Customer's confidential and/or proprietary information. CUSTOMER THEREFORE AGREES THAT USC/ISI'S TOTAL LIABILITY FOR SUCH DISCLOSURE SHALL BE LIMITED TO THE AMOUNT PAID BY CUSTOMER TO USC/ISI UNDER THE TERMS OF THIS AGREEMENT AND THAT THIS AMOUNT IS REASONABLE COMPENSATION FOR SUCH DAMAGES. 6. LEGAL EXPENSES a. In the event that legal action is taken by either party to enforce this Agreement, all costs and expenses, including reasonable attorney's fees, incurred by the prevailing party in exercising any of its rights or remedies hereunder or in enforcing any of the terms, conditions or provisions hereof, shall be paid by the other party. 7. SEVERABILITY a. If any part, term or provision of this Agreement shall be held illegal, unenforceable or in conflict with any law of a federal, state or local government having jurisdiction over this Agreement, the validity of the remaining portions or provisions shall not be affected thereby. 8. GOVERNING LAW a. This Agreement shall be construed and enforced according to the laws of the State of California. 9. MISCELLANEOUS a. Customer warrants that the services provided under this Agreement are for the use of Customer, and not for any parent, subsidiary or third party entity. Customer further warrants that it is not acting as an agent for another party in entering into this Agreement. b. Customer hereby discloses all parent or subsidiary organizations with which Customer is associated: c. The parties agree to abide by all applicable federal, state and local laws and regulations which regulate the activities envisioned by this Agreement. d. This Agreement contains all the agreements, representations, and understanding of the parties hereto and supersedes any previous understandings, commitments, or agreements, oral or written. Any modification to this Ageement must be in writing and signed by both parties. IN WITNESS WHEREOF, the parties hereto have set their hand. UNIVERSITY OF SOUTHERN CALIFORNIA INFORMATION SCIENCES INSTITUTE (Customer/Organization) By By LYN HUTTON Senior Vice President, Administration (Please type or print name) (Date) (Date) SP 12/17/87 From mosisout@vlsif.isi.edu Tue Jul 10 12:52:25 1990 Return-Path: Received: from kuhub.cc.ukans.edu by erlang.tisl.ukans.edu (4.0/1.0a) id AA04922; Tue, 10 Jul 90 12:52:23 CDT Received: from vlsif.isi.edu by kuhub.cc.ukans.edu; Tue, 10 Jul 90 12:48 CDT Received: by vlsif.isi.edu (5.61/5.61) id AA08461; Tue, 10 Jul 90 10:46:43 -0700 Date: 10 July 1990 10:27:28 From: The MOSIS System Subject: Part 5 (last):Topic: SAMPLE_FORMS To: evans@erlang.tisl.ukans.edu Message-Id: <9007101746.AA08461@vlsif.isi.edu> Posted-Date: 10 July 1990 10:27:28 X-Envelope-To: evans@erlang.tisl.ukans.edu Status: R ----------------------------------------------------------------------------- Area Cap .037 ---- ---- .023 .019 fF/um**2 (Layer to subs) Area Cap ---- ---- ---- .030 .020 fF/um**2 (Layer to Poly) Area Cap ---- ---- ---- ---- .042 fF/um**2 (Layer to Metal1) COMMENTS: These parameters look normal. VI. CIRCUIT PARAMETERS: ----------------------------------------------------------------------------- Vinv, K = 1 1.96 V Vinv, K = 1.5 2.19 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.01 V Vinv, K = 2.0 2.36 V Gain, K = 2.0 -12.00 Ring Oscillator Frequency 30.49 MHz (31 stages 5.0V) COMMENTS: The ring oscillator frequency is typical. M8CH SPICE PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.292923U TOX=403.000026E-10 + NSUB=1.252361E+16 VTO=0.738 KP=5.544000E-05 GAMMA=0.7551 + PHI=0.6 UO=646.871 UEXP=0.195772 UCRIT=23846.8 + DELTA=1.56163 VMAX=53213 XJ=0.250000U LAMBDA=4.249627E-02 + NFS=1.083036E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=37.220003 CGDO=2.509834E-10 CGSO=2.509834E-10 CGBO=-5.703876E-10 + CJ=1.666000E-04 MJ=0.583800 CJSW=5.513000E-10 MJSW=0.247000 PB=0.350000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.67 um .MODEL CMOSP PMOS LEVEL=2 LD=0.206151U TOX=403.000026E-10 + NSUB=8.924787E+15 VTO=-0.885081 KP=2.408000E-05 GAMMA=0.6375 + PHI=0.6 UO=281 UEXP=0.260883 UCRIT=18961.6 + DELTA=0.299559 VMAX=47630.2 XJ=0.250000U LAMBDA=5.789001E-02 + NFS=5.583092E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=115.800006 CGDO=1.766351E-10 CGSO=1.766351E-10 CGBO=1.406048E-10 + CJ=2.846000E-04 MJ=0.512600 CJSW=2.639000E-10 MJSW=0.227200 PB=0.530000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.16 um M8CH BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=VTI *RUN=m8ch *WAFER=5 *Gate-oxide thickness= 403.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 6.0/16.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE= * *NMOS PARAMETERS * -8.0414E-001,-2.4896E-001,2.32322E-001 7.51816E-001,0.00000E+000,0.00000E+000 1.07071E+000,-2.9794E-002,3.78009E-001 1.23487E-001,1.53831E-001,-6.7804E-002 -4.7538E-003,3.86962E-002,-7.8346E-003 5.69029E+002,2.51073E-001,-8.14080E-001 3.86690E-002,4.79726E-002,-3.7994E-002 -3.8072E-003,1.22724E+000,-4.9543E-001 7.47361E+000,-1.0386E+001,5.59280E+001 -3.3008E-004,-1.6979E-002,3.39123E-003 -2.1618E-005,-4.6946E-003,-3.2476E-003 1.64666E-003,-3.0019E-003,2.18170E-002 -2.0830E-002,4.33833E-002,6.44895E-002 5.89982E+002,8.16976E+002,-4.3541E+002 -1.0390E+001,4.39484E+001,1.13076E+002 -5.3774E-001,1.18454E+002,-6.3724E+001 1.19570E-003,1.25580E-001,-6.0857E-002 4.03000E-002,2.70000E+001,5.00000E+000 1.07563E-010,1.07563E-010,-6.97523E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 403 Angstroms * * *PMOS PARAMETERS * -2.4212E-001,-1.4567E-002,3.33824E-001 6.59278E-001,0.00000E+000,0.00000E+000 5.95438E-001,-4.3545E-002,-3.7067E-001 1.25327E-002,6.55230E-002,-1.6880E-001 -5.0896E-003,4.93218E-002,-1.1635E-002 2.29792E+002,3.76850E-001,-2.71430E-001 1.26809E-001,4.70339E-002,-1.0090E-001 4.14901E-003,3.17906E-001,-3.5473E-002 9.90559E+000,-4.6505E+000,3.87995E+000 -3.5035E-004,-3.1942E-003,-4.7378E-003 -9.8068E-004,1.15458E-003,-4.6737E-003 5.87181E-003,-2.2628E-003,5.32583E-004 -4.9022E-004,5.08530E-003,8.65839E-003 2.33995E+002,1.70218E+002,-4.4688E+001 8.44038E+000,2.65093E+000,6.12955E+000 1.87700E-002,1.13848E+001,2.67881E+000 -1.4441E-002,-5.5355E-003,1.81036E-002 4.03000E-002,2.70000E+001,5.00000E+000 1.61447E-010,1.61447E-010,-2.32568E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 37.22, 1.666000e-04, 5.075000e-10, 1.000000e-08, 0.35 0.8, 0.5838, 0.2987, 0, 0 * *P+ diffusion:: * 115.8, 2.846000e-04, 2.950000e-10, 1.000000e-08, 0.53 0.18, 0.5126, 0.1915, 0, 0 * *METAL LAYER -- 1 * 4.592000e-02, 2.600000e-05, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 3.100000e-02, 1.300000e-05, 0, 0, 0 0, 0, 0, 0, 0 From mosisout@vlsif.isi.edu Tue Jul 10 12:53:01 1990 Return-Path: Received: from kuhub.cc.ukans.edu by erlang.tisl.ukans.edu (4.0/1.0a) id AA04937; Tue, 10 Jul 90 12:52:58 CDT Received: from vlsif.isi.edu by kuhub.cc.ukans.edu; Tue, 10 Jul 90 12:49 CDT Received: by vlsif.isi.edu (5.61/5.61) id AA08385; Tue, 10 Jul 90 10:44:28 -0700 Date: 10 July 1990 10:27:28 From: The MOSIS System Subject: Part 3:Topic: SAMPLE_FORMS To: evans@erlang.tisl.ukans.edu Message-Id: <9007101744.AA08385@vlsif.isi.edu> Posted-Date: 10 July 1990 10:27:28 X-Envelope-To: evans@erlang.tisl.ukans.edu Status: R 13.3. Communicating with MOSIS This section contains MOSIS request templates, MOSIS messages, and replies, as well as a list of MOSIS Command Language parameters and their definitions. A complete list of MOSIS requests can be found in Chapter 4 (Section 4.5). 13.3.1. Templates The following templates contain MOSIS requests. Notice that some of the parameters are mandatory, while others are optional (preceded by "!"). To use a template, fill in the mandatory parameters and the desired optional parameters - being sure to remove the "!" in front of the optional parameters. Send the completed template to MOSIS in a net message. Each message to MOSIS may contain several REQUESTs, each of which may contain several parameters used as arguments for the REQUESTs. All REQUEST messages containing CIF must terminate with REQUEST: END. In certain requests, specific parameters must be listed last; these are shown at the end of each template. For those parameters that must appear last, any parameter that appears after them will be included as part of that last parameter (i.e., not as you may have intended). 13.3.1.1. Attention Template ------------------------ | | | REQUEST: ATTENTION | | !ID: | | !P-PASSWORD: | | (Put message here) | | REQUEST: END | | | ------------------------ Enter text of the message to be sent to a member of the MOSIS staff. The ID and P-PASSWORD must be included only in project-specific ATTENTION requests, but not in general ATTENTION requests. All text between "REQUEST: ATTENTION" and the next REQUEST: is sent to an electronic mailbox that is monitored by a MOSIS staff member and redistributed to an appropriate staff member for a response. PLEASE NOTE: The MOSIS software will NOT PARSE any text that appears after a REQUEST: END, since it reads this as the end of a message. Therefore, DO NOT append request messages together without removing any REQUEST: ENDs or MOSIS will read only the first request. See the One-Step Submission template on page 104 for an example of a message with multiple requests. 13.3.1.2. Information Template -------------------------- | | | REQUEST: INFORMATION | | TOPIC: | | !BYTE-LIMIT: | | !LINE-LIMIT: | | REQUEST: END | | | -------------------------- TOPIC: TOPICS will supply a list of available MOSIS documents. If your host machine enforces limits on the size of incoming messages, you may specify BYTE-LIMIT and/or LINE-LIMIT. MOSIS interprets these two parameters as limits in the body of the message(s) that MOSIS sends in response to your messages. Any response that is larger than one or the other limit will be sent to you in as many messages as required. These are REQUEST parameters (NOT message header parameters) and must follow REQUEST. MOSIS uses these limits for its own text without taking into account the "message header" lines required for network mail. If your host machine limit includes message header lines, you should specify limits at least 500 bytes and 10 lines smaller than your host-enforced limits. There can be multiple arguments to the TOPIC: parameter, separated by commas, e.g., TOPIC: SCHEDULE, PRICE_SCHED but the line may not wrap. 13.3.1.3. Library Templates -------------------- | | | REQUEST: INFO | | TOPIC: LIBRARY | | !BYTE-LIMIT: | | !LINE-LIMIT: | | REQUEST: END | | | -------------------- See the comment in the Information Template, above, for a description of BYTE-LIMIT and LINE-LIMIT parameters. Use this template to determine the library name and filename you are interested in: is one of the MOSIS libraries and is the name of a file residing in the indicated cell library. ----------------------------- | | | REQUEST: LIBRARY | | LIBRARY: | | FILE:> | | !BYTE-LIMIT: | | !LINE-LIMIT: | | REQUEST: END | | | ----------------------------- Use this template to request specific library files. Note that the parameters FILE: and LIBRARY: are one line parameters (similar to TOPIC:). 13.3.1.4. New-Project Template ------------------------------------------------------ | | | REQUEST: NEW-PROJECT | | D-NAME: | | D-PASSWORD: | | P-NAME: | | P-PASSWORD: | | PHONE: | | MAILING-ADDRESS: | | ACCOUNT: | | DESCRIPTION: | | TECHNOLOGY: | | LAMBDA: | | !NET-ADDRESS: | | !SIZE: | | !SPECIAL-HANDLING: | | !QUANTITY: | | !FOUNDRY: | | !OPTIONS: (SHARE/NOSHARE, SUBSTRATE/NOSUBSTRATE) | | !BOND-SAME-AS: | | !STD-FRAME: | | !PADS: | | !PO: | | !COMMENT: | | !ATTENTION: | | REQUEST: END | | | ------------------------------------------------------ The following parameters MUST be included in the NEW-PROJECT template and need NOT be included in subsequent templates: P-NAME, DESCRIPTION, NET-ADDRESS, PHONE, TECHNOLOGY, LAMBDA, SPECIAL-HANDLING, OPTIONAL, BOND-SAME-AS, STD-FRAME, SIZE, PADS. If your project is NOT a Standard Frame, you must include the SIZE or PADS parameters. The PO parameter is mandatory if your project is a commercial project. MOSIS' new accounting format does not require an affiliation parameter; all new account names begin with digits, e.g., 123. ATTENTION may be either a REQUEST or a parameter of other requests. When you use it as a request, only the text between REQUEST: ATTENTION and the next REQUEST: will be forwarded to the MOSIS staff. When you use ATTENTION as a parameter within a REQUEST message, e.g., with a NEW-PROJECT request, the entire message, including NEW-PROJECT parameters and ending at the next REQUEST will be forwarded to MOSIS personnel. Any inclusion of a command word with a colon, e.g., REQUEST:, will be parsed as a keyword command. If you have a question on message syntax and wish to have a template fragment reviewed by the MOSIS staff, it is important to change the colons to semicolons in the text. If you do not make this change, the MOSIS software reads these as real requests and your message, in its entirety, will not reach the MOSIS staff. See the One-Step Submission template on page 104 for an example of a message with multiple requests. 13.3.1.5. Submit Template --------------------- | | | REQUEST: SUBMIT | | ID: | | P-PASSWORD: | | !CIF-FTP-PATH: | | !CIF-CHECKSUM: | | !COMMENT: | | !ATTENTION: | | !CIF: | | !CIF-FRAGMENT: | | REQUEST: END | | | --------------------- Note that some form of CIF must be present, either CIF or CIF-FRAGMENT. CIF-FTP-PATH and CIF-FRAGMENT may be used together. If either CIF or CIF-FRAGMENT appears, it must be the last parameter in the request. This request submits a CIF file, asking MOSIS to compute the size of the project and count the pads (CHECK_PROJ). It can be issued only after your project has been accepted by MOSIS and you have a valid Project-ID. You will receive an initial acknowledgment from MOSIS and a final Pass or Fail notification. Any CIF file that fails CHECK_PROJ is deleted from the MOSIS database. You should therefore resubmit any revised CIF file in complete form. You may use this request many times for correction and revision of CIF before your project is queued for fabrication. Use the CIF-FTP-PATH option to submit extremely large files or to submit file fragments separately. 13.3.1.6. Fabricate Template ------------------------ | | | REQUEST: FABRICATE | | ID: | | P-PASSWORD: | | !CIF-FTP-PATH: | | !CIF-CHECKSUM: | | !COMMENT: | | !ATTENTION: | | !CIF: | | !CIF-FRAGMENT: | | REQUEST: END | | | ------------------------ If either CIF or CIF-FRAGMENT appears, it must be the last parameter in the request. 13.3.1.7. One-Step (New-Project/Fabricate) Submission Template -------------------------------------------------------- | | | REQUEST: NEW-PROJECT | | D-NAME: | | D-PASSWORD: | | P-NAME: | | P-PASSWORD: | | PHONE: | | MAILING-ADDRESS: | | ACCOUNT: | | DESCRIPTION: | | TECHNOLOGY: | | LAMBDA: | | !NET-ADDRESS: | | !SIZE: | | !SPECIAL-HANDLING: | | !QUANTITY: | | !FOUNDRY: | | !OPTIONS: (SHARE/NOSHARE, SUBSTRATE/NOSUBSTRATE) | | !BOND-SAME-AS: | | !STD-FRAME: | | !PADS: | | !PO: | | !COMMENT: | | !ATTENTION: | | REQUEST: FABRICATE | | ID:* | | P-PASSWORD: | | CIF: | | REQUEST: END | | | | | -------------------------------------------------------- The One-Step Submission, for those who need to expedite project submission, consists of a single message containing the NEW-PROJECT request followed by the FABRICATE request. Notice that a "*" is used for the Project-ID. The "*" is used as the ID for your project ONLY in this One-Step Submission (because MOSIS has not yet assigned a Project-ID). All further requests regarding this project must include the real ID as assigned by MOSIS. 13.3.1.8. N-Step Submission To send your CIF file to MOSIS in fragments, use the NEW-PROJECT, SUBMIT or FABRICATE requests as described below: 1. Send MOSIS a NEW-PROJECT request to receive your Project-ID. 2. Divide your CIF file into N fragments so that each fragment is small enough to be handled in a single message. 3. Send N message fragments to MOSIS using the SUBMIT or the FABRICATE request and the CIF-FRAGMENT parameter described below. Each SUBMIT request should include the same parameters as in the standard procedure except that, instead of the parameter CIF, the parameter CIF-FRAGMENT should be used. The line with this parameter should look like this: "CIF-FRAGMENT: K/N", where N is the total number of fragments in the CIF project file and K is the number of the fragment. The CIF fragment should start on the line following the CIF-FRAGMENT parameter. MOSIS acknowledges the receipt of each fragment. When the full set has been received, MOSIS will append the fragments together and initiate CHECK_PROJ. You may use the DELETE-CIF request at any time to terminate the submission of CIF fragments. This is useful when sudden revisions to a project are necessary. Note that DELETE-CIF will delete ALL CIF for that project. An Important Note on Submitting CIF: Any submission of CIF is terminated either explicitly, by the next request (usually, "REQUEST: END"), or implicitly, when the end of the message is reached. The latter termination typically results in the message trailer (e.g., "------" of SNDMSG, a mailer) being appended to the end of the CIF file. This addition is not harmful after the CIF "E" command, which terminates the CIF file; however, such a trailer may be harmful at the end of CIF-FRAGMENTs, which may be in arbitrary positions in the middle of a CIF file. Therefore, all CIF submissions (especially when using CIF-FRAGMENT) should be explicitly terminated "REQUEST: END". 13.3.1.9. Update Template --------------------- | | | REQUEST: UPDATE | | ID: | | P-PASSWORD: | | !P-NAME: | | !DESCRIPTION: | | !NET-ADDRESS: | | !PHONE: | | !COMMENT: | | !ATTENTION: | | REQUEST: END | | | --------------------- 13.3.1.10. Delete-CIF Template ------------------------- | | | REQUEST: DELETE-CIF | | ID: | | P-PASSWORD: | | !COMMENT: | | !ATTENTION: | | REQUEST: END | | | ------------------------- 13.3.1.11. Cancel-Fabricate Template ------------------------------- | | | REQUEST: CANCEL-FABRICATE | | ID: | | P-PASSWORD: | | !ATTENTION: | | !COMMENT: | | REQUEST: END | | | ------------------------------- 13.3.1.12. Cancel-Project Template ----------------------------- | | | REQUEST: CANCEL-PROJECT | | ID: | | P-PASSWORD: | | !COMMENT: | | !ATTENTION: | | REQUEST: END | | | ----------------------------- 13.3.1.13. Status Template --------------------- | | | REQUEST: STATUS | | ID: | | P-PASSWORD: | | !COMMENT: | | !ATTENTION: | | REQUEST: END | | | --------------------- This will give you status on your run before it reaches the fabrication step. To receive information on your project during fabrication, send an INFORMATION request to MOSIS. See the STATUS topic on page LIST-OF-TOPICS. 13.3.1.14. Report Template --------------------- | | | REQUEST: REPORT | | ID: | | P-PASSWORD: | | FAB-ID: | | !COMMENT: | | !ATTENTION: | | !P-NAME: | | REPORT: | | REQUEST: END | | | --------------------- It is particularly important that all performance and yield data be reported separately for each fabrication of a project. Each report should clearly identify both the Project-ID and the Fab-ID of the project. Reports should specify the chip site location(s) of each project -- this information helps MOSIS to classify fabrication defects. The site location of each chip can be found in the top right-hand corner of the die when it is viewed under a microscrope. Note that the REPORT parameter, which is mandatory, must be last. 13.3.1.15. Functional-Screen Template -------------------------------- | | | REQUEST: FUNCTIONAL-SCREEN | | ID: | | P-PASSWORD: | | !COMMENT: | | !ATTENTION: | | | -------------------------------- See Chapter 11 for more information. 13.3.2. Sample MOSIS Messages This section contains samples of messages to and from MOSIS. 13.3.2.1. New Project Request ------------------------------------------------------------------------ | | | | | To: MOSIS@MOSIS.EDU | | From: Olive@Navy | | Subject: Intent to submit new project | | | | REQUEST: NEW-PROJECT | | D-NAME: Olive | | ACCOUNT: 78Q-675 | | D-PASSWORD: Popeye | MAILING-ADDRESS: Ms. O. Oyl | OP-9876 | | NAS Poseidon | | Massachusetts 02177 | | P-NAME: VFFT | | P-PASSWORD: | | DESCRIPTION: This is a device to compute a Very Fast | | Fourier Transform of sonar data, which is the | | key to the security of underwater rafts. | | It works according to the principles described in... | | TECHNOLOGY: SCP | From mosisout@vlsif.isi.edu Tue Jul 10 12:53:18 1990 Return-Path: Received: from kuhub.cc.ukans.edu by erlang.tisl.ukans.edu (4.0/1.0a) id AA04945; Tue, 10 Jul 90 12:53:16 CDT Received: from vlsif.isi.edu by kuhub.cc.ukans.edu; Tue, 10 Jul 90 12:49 CDT Received: by vlsif.isi.edu (5.61/5.61) id AA08429; Tue, 10 Jul 90 10:46:07 -0700 Date: 10 July 1990 10:27:28 From: The MOSIS System Subject: Part 4:Topic: SAMPLE_FORMS To: evans@erlang.tisl.ukans.edu Message-Id: <9007101746.AA08429@vlsif.isi.edu> Posted-Date: 10 July 1990 10:27:28 X-Envelope-To: evans@erlang.tisl.ukans.edu Status: R | LAMBDA: 1.0 | | PADS: 24 | | REQUEST: END | | ---- | | | ------------------------------------------------------------------------ 13.3.3. One-Step Submission Request ------------------------------------------------------------------------ | REQUEST: NEW-PROJECT | D-NAME: POOH | | D-PASSWORD: | | PHONE: (123) 333-4444 | | MAILING-Addr: | | ACCOUNT: VLSI | | DESCRIPTION: | | multiplier for 1's compliment | | arithmetics, using 2-bit at a time... | | TECHNOLOGY: | | LAMBDA: 1.0 | | PADS: 39 | | NET-Address: | | US Navy | | Annapolis, MD. 23456 | | P-NAME: MULTIPLY 16x20 | | P-PASSWORD: | | REQUEST: FABRICATE | | ID: * | | P-Password: | | SIZE: 1850 x 3200 | | CIF: | | (LAP281B --- VFFT.CIF); | | l VFFT); | | DS 1 250 10; | | L ND; | | W 20 960,-50 960,100; | | B 60 500 1030,80; | | ...... | | ...... | | E | | REQUEST: END | | --- | ------------------------------------------------------------------------ 13.3.4. New Project Acknowledgment ----------------------------------------- | | | To: Olive@Navy | | From: MOSIS@MOSIS.EDU | | Subject: OK New-Project, 12345 VFFT | | ID: 12345 | | P-Name: VFFT | | Status: New project; no valid CIF. | | --- | | | ----------------------------------------- 13.3.5. Fabrication Announcement ----------------------------------------------------------------------------- | | | To: Olive@Navy | | From: MOSIS@MOSIS.EDU | | Subject: Being fabricated: 12345 VFFT | | | | Status: Being fabricated. | | Fab-ID: M78BAD1 | | | | The Fab-ID indicates on which die of run M78B (Brutus) the project | | is fabricated. | | | | From now on please obtain status and scheduling information | | concerning this run by using the following MOSIS request: | | | | REQUEST: INFORMATION | | TOPIC: M78B.STS | | REQUEST: END | | | | The MOSIS Service | | --- | | | ----------------------------------------------------------------------------- 13.3.6. Project Report to MOSIS --------------------------------------------------------------------- | | | To: MOSIS@MOSIS.EDU | | From: Olive@Navy | | Subject: REPORT on 12345 M79HED1 VFFT | | | | REQUEST: REPORT | | ID: 12345 | | P-Name: VFFT | | Fab-ID: M79HED1 | | P-P: Kaziboo | | REPORT: | | We received 25 bonded devices for this | | project. 23 of them were found to be | | fully operational at 25MHz. | | | | Both defective chips have the same problem, | | and both came from site No. 43. | | REQUEST: END | | --- | | | --------------------------------------------------------------------- 13.3.7. MOSIS Command Language Parameters Following is an alphabetical list of parameters to be used with MOSIS requests. (See Chapter 4 for a list of MOSIS requests.) Request and parameter names may be abbreviated, as long as no ambiguities result. 13.3.7.1. Available PARAMETERs ACCOUNT <1 line> Identification of the account to be charged for a project. ATTENTION Requests to bring to the attention of the MOSIS staff some special message or project requirement. May be abbreviated as ATTN. Note: ATTENTION may be either a REQUEST or a parameter of other requests. BOND-SAME-AS <1 line> Specifies the need for bonding to duplicate that of an earlier project or Standard Frame. User may supply either the Project-ID or the Fab-ID of the project to be duplicated, or the name of a MOSIS Standard Frame. BYTE-LIMIT Limits the number of bytes in the body of message(s) that MOSIS sends back to users who request information or library file(s). CIF The project design file. Note: The keyword "CIF:" has no arguments but is followed on the next and subsequent lines by the project design itself. Note also that the CIF design must be the last item in the request. Lines that follow the CIF, but which do not begin with "REQUEST:", will be considered part of the CIF (e.g., within the SUBMIT request, if "ATTENTION: " is placed following the CIF text, it will be considered part of the CIF, so that the request will not be manually processed). It is strongly recommended that the CIF be explicitly terminated with another request (e.g., REQUEST: END) rather than implicitly, by the end of the message. CIF-CHECKSUM Pair of numbers computed for a CIF file or fragment to help determine the integrity of the received file or fragment. CIF-FRAGMENT Fragment of a CIF file for a project. CIF-FTP-PATH List of parameters needed to FTP a CIF file to MOSIS. Alternative to the CIF parameter. COMMENT Text totally ignored by MOSIS, to be used by the designer for any purpose. DESCRIPTION Specific description of the project. D-NAME <1 line> Name of the MOSIS user submitting the project. D-PASSWORD <1 line> Password given to this user (D-NAME) to authenticate new project requests sent to MOSIS. FILE <1 line> Used in REQUEST:LIBRARY template to get MOSIS library files. FOUNDRY <1 line> Name of foundry(ies) acceptable to designer for fabrication. It is not necessary to use this parameter when specifying a foundry-specific technology since a foundry is already implied, however, you may use this with all other generic design technologies. ID Unique identification of the project -- assigned by MOSIS. LAMBDA Value of lambda (in microns) that applies to this project. Lambda is one-half the minimum feature size and MUST be provided for all scalable technologies, even if your design system does not use lambda internally. LIBRARY <1 line> REQUEST: LIBRARY is followed on the next two lines by LIBRARY: and FILE: to obtain library files. LINE-LIMIT Limits the number of lines in the body of message(s) that MOSIS sends back to users who request information or library file(s). MAILING ADDRESS Address for MOSIS to send packaged parts and correspondence. The address should be in exact form for a shipping label and MUST include the actual designer's name and street address of the organization (including mail-stop, etc.). Do not use PO box numbers -- couriers will not accept them. Warning: Do not include ATTN: or ATTENTION: at the beginning of a line in the MAILING-ADDRESS, or MOSIS will interpret it as an ATTENTION parameter. NET-ADDRESS @ {,@} <1 line> Note: MOSIS will send all replies to requests only to above net address(es). It is very important that net address(es) be kept current throughout the lifetime of the project. OPTIONS <1 line> Yes/No inputs to the OPTIONS parameter can be either SHARE and/or SUBSTRATE. SHARE requests that you share the standard quantity and cost of a chip with others from your organization (up to three others, if available). This option is for the small chip only. The default, NOSHARE, means that you are the sole owner of the chip and will receive the standard quantity of parts. SUBSTRATE requests that your package bonding include a substrate connection on the standard pin for that package. PADS Number of pads to be bonded for the project. If this parameter is left unspecified, all boxes on the glass layer will be bonded. A pads value of 0 will produce an unbonded, unpackaged chip. Note: This parameter should not be supplied for a Standard Frame project. PHONE <1 line> Telephone number(s) where user(s) can be reached. P-NAME <1 line> Short name for the project, e.g., ADDER or SHIFTER. P-PASSWORD <1 line> Arbitrary password assigned to the project by the user in the NEW-PROJECT request. QUANTITY <1 line> To order more than the standard quantity of parts (see the MOSIS Price List). REPORT User report to MOSIS on the performance of a fabricated project. SHARE <1 line> Yes/No parameter for the OPTIONS request. These should be on one line with the SUBSTRATE/NOSUBSTRATE parameter (if applicable), separated by commas. This requests that you share the standard quantity and the cost of a chip with others from your organization (up to three others, if available). This parameter is for the small chip size only. The default, NOSHARE, means that you are the sole owner of the chip and will receive the standard quantity of parts. SUBSTRATE <1 line> Yes/No parameter for OPTIONS request, to be combined on one line with the SHARE/NOSHARE parameter (if applicable). This parameter requests that your package bonding include a substrate connection on the standard pin for that package. SIZE x Size of the project in microns. This parameter is required before CHECK_PROJ for Nonstandard Frame projects only. SPECIAL-HANDLING Specifies special size, bonding, and shipping requests. STD-FRAME <1 line> Name of a standard pad frame, i.e., one of several bonding pad placements for which MOSIS is able to offer automatic wire-bonding. TECHNOLOGY <1 line> Project technology (one of the known MOSIS fabrication technologies). TOPIC <1 line> Name of the information topic desired. Note: Requesting TOPIC: TOPICS will retrieve a list of all available information topics. 13.4. Designing Your Chip MOSIS PARAMETRIC TEST RESULTS (SAMPLE) RUN: M8CH / HARPER VENDOR: VTI TECHNOLOGY: SCN FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE and/or BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical VLSI Technology 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ----------------------------------------------------------------------------- Vth (Vds=.05V) 3/2 .673 -.859 V Vth (Vds=.05V) 18/2 .507 -.849 V Idss (Vgds=5V) 18/2 2627.0 -1082.0 uA Vpt (Id=1.0uA) 18/2 N/A -16.70 V Vth (Vds=.05V) 50/50 .824 -.842 V Vbkd (Ij=1.0uA) 50/50 18.9 -16.7 V Kp 50/50 24.2 9.82 uA/V**2 (Uo*Cox/2) Gamma 50/50 .524 .533 V**0.5 (2.5v,5.0v) Delta Length .400 .125 um Delta Width -.689 .095 um (Effective=Drawn-Delta) COMMENTS: These parameters look normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 22.0 -27.0 V Vth (Vbs=0,I=1uA) Metal1 21.8 -21.3 V Vth (Vbs=0,I=1uA) Metal2 21.5 -15.7 V COMMENTS: These parameters look normal. IV. PROCESS N P N P N METAL METAL PARAMETERS: POLY POLY DIFF DIFF WELL 1 2 UNITS ----------------------------------------------------------------------------- Sheet Resistance 22.7 23.4 38.3 117.8 2499.0 .046 .031 Ohm/sq Width Variation -.215 -.195 .497 .108 ---- .012 .687 um (Measured - Drawn) Contact Resist. 9.33 9.89 31.51 55.72 ---- ---- .042 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 403. ---- ---- ---- Angst. COMMENTS: These parameters look normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS