[SCN16_HP_PRM] The following are the parameters for the recent HP 1.6u CMOS N-well runs. [M98V.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: M98V / VERBATIM VENDOR: HP TECHNOLOGY: SCN FEATURE SIZE: 1.6um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Hewlett Packard 1.6um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 2.4/1.6 .842 -.852 V Vth (Vds=.05V) 14.4/1.6 .824 -.742 V Idss (Vgds=5V) 14.4/1.6 3140.0 -1304.0 uA Vpt (Id=1.0uA) 14.4/1.6 N/A -13.33 V Vth (Vds=.05V) 14.4/14.4 .861 -.777 V Vbkd (Ij=1.0uA) 14.4/14.4 14.8 -14.0 V Kp 14.4/14.4 33.8 12.35 uA/V^2 (Uo*Cox/2) Gamma 14.4/14.4 .291 .632 V^0.5 (2.5v,5.0v) Delta Length .221 .325 um Delta Width .304 .558 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. PROCESS N P N P METAL METAL PARAMETERS: POLY POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 25.2 27.0 68.2 131.2 .049 .026 Ohm/sq Width Variation -.260 -.240 -.680 -.169 -.161 -.337 um (Measured - Drawn) Contact Resist. 11.88 22.70 39.55 49.34 ---- .053 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 261. ---- ---- ---- Angst. Area Cap .061 ---- .136 .434 ---- ---- fF/um^2 (Layer to subs) Fringe Cap ---- ---- .598 .191 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. IV. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Ring Oscillator Frequency 51.88 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. M98V SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=hp *RUN=m98v *WAFER=13 *Gate-oxide thickness= 265.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 2.4/1.6, 4.8/1.6, 14.4/1.6, 14.4/4.0, 14.4/20.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=10-10-89 * *NMOS PARAMETERS * -1.0535E+000,1.86718E-001,-8.1077E-002 8.04622E-001,0.00000E+000,0.00000E+000 1.43407E+000,-2.1540E-001,5.86583E-002 2.77292E-001,8.62347E-003,-1.2330E-001 -5.5048E-003,2.06126E-002,-6.0174E-003 5.14440E+002,4.96704E-001,2.32834E-001 5.57481E-002,6.65418E-002,-5.2881E-002 5.91268E-002,4.58575E-001,-1.3810E-001 4.93870E+000,-5.5565E+000,3.74097E+001 -2.2477E-003,-5.7812E-003,-4.5067E-004 8.09673E-004,-4.2196E-004,-7.2393E-003 4.85843E-005,-1.0964E-003,1.74257E-002 -1.9385E-002,2.51556E-002,1.40737E-002 6.55862E+002,2.73524E+002,-1.9149E+002 -8.3136E+000,2.11738E+001,6.27845E+001 1.04913E+001,5.12721E+001,-3.5164E+001 2.18350E-002,4.07844E-002,-2.8623E-002 2.65000E-002,2.70000E+001,5.00000E+000 4.85431E-010,4.85431E-010,6.91714E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 264 Angstroms * * *PMOS PARAMETERS * -3.1247E-001,-1.0954E-001,4.07607E-001 6.99599E-001,0.00000E+000,0.00000E+000 4.07923E-001,1.26039E-001,-9.8705E-002 -5.9055E-002,6.29754E-002,-3.6118E-002 -3.8935E-003,2.02175E-002,1.04821E-002 1.84046E+002,3.49412E-001,4.65508E-001 1.26586E-001,5.51747E-002,-8.6198E-002 -9.4649E-003,1.49429E-001,4.86701E-003 9.08246E+000,-2.3574E+000,2.96116E+000 6.60271E-004,-1.8327E-003,1.60545E-005 1.43413E-003,-2.2641E-003,-3.7824E-003 6.30208E-003,-6.0688E-004,2.78471E-003 -2.2631E-004,1.96607E-003,5.32353E-003 1.80506E+002,7.60878E+001,-1.4292E+001 6.87138E+000,2.48870E+000,5.42419E+000 -6.8595E-001,5.07337E+000,-8.0992E-002 -1.5028E-002,4.85448E-003,-1.0867E-004 2.65000E-002,2.70000E+001,5.00000E+000 3.41482E-010,3.41482E-010,7.60397E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 25.2, 1.450000e-04, 5.730000e-10, 0, 0.8 0.8, 0.546, 0.256, 0, 0 * *P+ diffusion:: * 27.21, 4.313000e-04, 1.850000e-10, 0, 0.85 0.85, 0.479, 0.3017, 0, 0 * *METAL LAYER -- 1 * 4.900000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.600000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [M98U.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: M98U / ULRIKA VENDOR: HP TECHNOLOGY: SCN FEATURE SIZE: 1.6um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Hewlett Packard 1.6um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 2.4/1.6 .788 -.829 V Vth (Vds=.05V) 14.4/1.6 .774 -.728 V Idss (Vgds=5V) 14.4/1.6 3701.0 -1549.0 uA Vpt (Id=1.0uA) 14.4/1.6 N/A -12.72 V Vth (Vds=.05V) 14.4/14.4 .805 -.758 V Vbkd (Ij=1.0uA) 14.4/14.4 15.7 -13.7 V Kp 14.4/14.4 36.9 13.61 uA/V^2 (Uo*Cox/2) Gamma 14.4/14.4 .286 .567 V^0.5 (2.5v,5.0v) Delta Length .442 .159 um Delta Width .299 .543 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 18.1 N/A V Vth (Vbs=0,I=1uA) Metal1 18.1 N/A V Vth (Vbs=0,I=1uA) Metal2 17.6 N/A V COMMENTS: These parameters seem normal. IV. PROCESS N P N P METAL METAL PARAMETERS: POLY POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 24.5 24.7 73.9 133.8 .053 .026 Ohm/sq Width Variation -.397 -.376 -.411 -.440 .097 -.295 um (Measured - Drawn) Contact Resist. 11.04 17.35 42.47 50.75 ---- .058 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 248. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .057 .166 ---- .037 ---- fF/um**2 (Layer to subs) Fringe Cap ---- .573 ---- ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 1.92 V Vinv, K = 1.5 2.18 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.01 V Vinv, K = 2.0 2.37 V Gain, K = 2.0 -12.89 Ring Oscillator Frequency 59.11 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. M98U SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=hp *RUN=m98u *WAFER=14 *Gate-oxide thickness= 261.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 2.4/1.6, 4.8/1.6, 14.4/1.6, 14.4/4.0, 14.4/20.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=11-10-89 * *NMOS PARAMETERS * -1.0201E+000,1.63663E-001,6.19890E-002 7.88032E-001,0.00000E+000,0.00000E+000 1.31370E+000,-1.8261E-001,-1.2209E-001 2.45245E-001,1.47686E-002,-1.3972E-001 -9.1580E-003,2.18873E-002,2.43441E-003 5.33387E+002,6.16906E-001,2.48091E-001 6.05701E-002,5.88901E-002,-5.7239E-002 7.01602E-002,3.89641E-001,-1.3923E-001 2.89222E+000,-4.3296E+000,3.68633E+001 -3.0054E-003,-4.0516E-003,-3.3448E-004 6.88347E-004,-1.5262E-003,-4.4141E-003 -1.1753E-003,-7.3480E-004,1.65173E-002 -1.6385E-002,2.19971E-002,1.24124E-002 6.94783E+002,2.29454E+002,-2.0453E+002 -1.0156E+001,2.05050E+001,6.21920E+001 1.25275E+001,4.91020E+001,-4.6021E+001 2.08261E-002,3.63600E-002,-4.0294E-002 2.61000E-002,2.70000E+001,5.00000E+000 6.12145E-010,6.12145E-010,6.98720E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 261 Angstroms * * *PMOS PARAMETERS * -4.2297E-001,1.79715E-002,4.34289E-002 7.32559E-001,0.00000E+000,0.00000E+000 4.93218E-001,-6.3134E-002,3.09532E-001 -2.3484E-002,6.57988E-003,8.61925E-002 -7.1262E-003,2.33634E-002,1.17427E-002 1.94389E+002,4.13759E-001,4.15865E-001 1.29648E-001,6.51435E-002,-8.4048E-002 1.32397E-003,1.27142E-001,1.57641E-002 9.21433E+000,-1.6723E+000,2.46350E+000 1.12942E-004,-1.5519E-003,-6.9824E-004 9.36950E-004,-2.0473E-003,-1.0492E-003 7.01452E-003,-5.5748E-004,5.68603E-004 4.95105E-003,-4.7192E-003,7.72334E-003 1.86412E+002,8.86957E+001,1.39146E+001 7.70350E+000,2.17351E+000,8.71539E+000 -1.6679E+000,6.72368E+000,5.91897E-001 -4.2787E-002,3.99626E-002,1.17455E-003 2.61000E-002,2.70000E+001,5.00000E+000 4.10566E-010,4.10566E-010,7.48472E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 73.79, 1.154000e-04, 5.376000e-10, 0, 0.8 0.8, 0.551, 0.275, 0, 0 * *P+ diffusion:: * 137.8, 4.213000e-04, 1.925000e-10, 0, 0.85 0.85, 0.4706, 0.3224, 0, 0 * *METAL LAYER -- 1 * 5.400000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.800000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [M9AD.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: M9AD / DAMIEN VENDOR: HP TECHNOLOGY: SCN FEATURE SIZE: 1.6um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Hewlett Packard 1.6um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 2.4/1.6 .805 -.881 V Vth (Vds=.05V) 14.4/1.6 .787 -.776 V Idss (Vgds=5V) 14.4/1.6 3362.0 -1345.0 uA Vpt (Id=1.0uA) 14.4/1.6 13.58 -13.11 V Vth (Vds=.05V) 14.4/14.4 .814 -.800 V Vbkd (Ij=1.0uA) 14.4/14.4 14.5 -13.9 V Kp 14.4/14.4 35.4 12.61 uA/V^2 (Uo*Cox/2) Gamma 14.4/14.4 .305 .602 V^0.5 (2.5v,5.0v) Delta Length .435 .296 um Delta Width .168 .547 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. PROCESS N P N P METAL METAL PARAMETERS: POLY POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 23.6 24.9 68.6 133.9 .050 .028 Ohm/sq Width Variation -.362 -.341 -.137 -.264 .024 -.214 um (Measured - Drawn) Contact Resist. 10.47 17.04 37.78 50.15 ---- .059 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 251. ---- ---- ---- Angst. Area Cap .058 ---- .147 .428 ---- ---- fF/um^2 (Layer to subs) Fringe Cap ---- ---- .596 .192 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. IV. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Ring Oscillator Frequency 55.51 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. M9AD SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=hp *RUN=m9ad *WAFER=5 *Gate-oxide thickness= 258.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 2.4/1.6, 4.8/1.6, 14.4/1.6, 14.4/4.0, 14.4/20.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=12-04-89 * *NMOS PARAMETERS * -1.0197E+000,1.17897E-001,-5.2267E-002 8.01150E-001,0.00000E+000,0.00000E+000 1.33036E+000,-1.2928E-001,4.38856E-003 2.42955E-001,2.75218E-002,-1.1988E-001 -7.6962E-003,1.86661E-002,6.21801E-003 4.88917E+002,6.19165E-001,1.38463E-001 5.22134E-002,6.04123E-002,-3.8281E-002 6.93417E-002,3.87027E-001,-1.3337E-001 3.86202E+000,-4.8382E+000,3.39433E+001 -1.9216E-003,-5.6131E-003,5.26240E-005 6.65474E-004,-6.1721E-004,-6.0584E-003 -5.0511E-004,-8.9489E-004,1.65248E-002 -2.0257E-002,2.09616E-002,1.83499E-002 6.35726E+002,2.18514E+002,-2.1678E+002 -1.1552E+001,1.72553E+001,6.41407E+001 1.33862E+001,4.41423E+001,-4.8463E+001 2.17975E-002,3.62554E-002,-3.9048E-002 2.58000E-002,2.70000E+001,5.00000E+000 6.21531E-010,6.21531E-010,6.24684E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 258 Angstroms * * *PMOS PARAMETERS * -7.6714E-001,4.88618E-001,1.47692E-001 7.17930E-001,0.00000E+000,0.00000E+000 9.75435E-001,-6.2356E-001,9.64237E-002 1.15738E-001,-1.5151E-001,-7.0000E-003 -7.9973E-003,3.12518E-002,-2.6078E-003 1.83473E+002,3.13847E-001,3.51753E-001 1.35304E-001,4.48643E-002,-7.4014E-002 -1.5099E-002,1.78169E-001,1.76640E-002 9.84709E+000,-2.9141E+000,1.80908E+000 -5.4328E-005,7.82354E-004,-7.5643E-003 1.28824E-003,-2.4925E-003,-3.3147E-003 9.80831E-003,-4.2715E-003,-6.3242E-004 -2.1590E-003,2.53462E-003,1.72207E-002 2.06692E+002,6.13760E+001,-3.0480E+000 1.06850E+001,-2.1424E+000,9.64564E+000 -5.0050E-001,6.19947E+000,5.72912E-001 -1.4678E-002,3.24888E-003,4.90921E-003 2.58000E-002,2.70000E+001,5.00000E+000 3.15046E-010,3.15046E-010,6.84379E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 68.5, 1.150000e-04, 5.380000e-10, 0, 0.8 0.8, 0.55, 0.275, 0, 0 * *P+ diffusion:: * 134.3, 4.250000e-04, 1.850000e-10, 0, 0.85 0.85, 0.4694, 0.2889, 0, 0 * *METAL LAYER -- 1 * 5.000000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.800000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N01O.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N01O / ODETTE VENDOR: HP TECHNOLOGY: SCN FEATURE SIZE: 1.6um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Hewlett Packard 1.6um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 2.4/1.6 .792 -.859 V Vth (Vds=.05V) 14.4/1.6 .785 -.756 V Idss (Vgds=5V) 14.4/1.6 3370.0 -1378.0 uA Vpt (Id=1.0uA) 14.4/1.6 N/A -12.84 V Vth (Vds=.05V) 14.4/14.4 .814 -.769 V Vbkd (Ij=1.0uA) 14.4/14.4 14.6 -13.7 V Kp 14.4/14.4 36.3 12.89 uA/V^2 (Uo*Cox/2) Gamma 14.4/14.4 .286 .607 V^0.5 (2.5v,5.0v) Delta Length .384 .017 um Delta Width .227 .571 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 16.6 -17.3 V Vth (Vbs=0,I=1uA) Metal1 16.6 -17.3 V Vth (Vbs=0,I=1uA) Metal2 16.7 -17.5 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P METAL METAL PARAMETERS: POLY POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 24.1 25.7 79.8 123.8 .050 .027 Ohm/sq Width Variation -.327 -.312 ---- -.347 -.139 -.184 um (Measured - Drawn) Contact Resist. 11.49 18.30 47.25 48.09 ---- .052 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 249. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .053 .135 .433 .034 ---- fF/um^2 (Layer to subs) Fringe Cap ---- .602 .173 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 1.94 V Vinv, K = 1.5 2.18 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.00 V Vinv, K = 2.0 2.37 V Gain, K = 2.0 -14.74 Ring Oscillator Frequency 51.79 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N01O SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=hp *RUN=n01o *WAFER=12 *Gate-oxide thickness= 259.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 2.4/1.6, 4.8/1.6, 14.4/1.6, 14.4/4.0, 14.4/20.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=03-09-90 * *NMOS PARAMETERS * -1.0613E+000,1.06196E-001,1.22416E-001 7.98671E-001,0.00000E+000,0.00000E+000 1.41961E+000,-1.3896E-001,-2.4500E-001 2.62113E-001,3.53627E-002,-1.8245E-001 -7.5679E-003,2.03700E-002,6.55017E-003 5.08383E+002,5.72778E-001,3.29475E-002 5.32378E-002,5.88878E-002,-3.0395E-002 6.89140E-002,4.53498E-001,-1.7776E-001 2.51704E+000,-4.7113E+000,4.75313E+001 -1.5220E-003,-6.0849E-003,-1.3502E-003 1.56372E-003,-2.0828E-004,-1.1343E-002 -1.4395E-003,-7.0831E-004,2.41315E-002 -2.0960E-002,2.41349E-002,1.63299E-002 6.58046E+002,2.80166E+002,-3.1790E+002 -1.4217E+001,2.16273E+001,8.17833E+001 1.43875E+001,5.00773E+001,-5.3201E+001 2.36431E-002,4.24050E-002,-4.6336E-002 2.59000E-002,2.70000E+001,5.00000E+000 5.72747E-010,5.72747E-010,6.36039E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 259 Angstroms * * *PMOS PARAMETERS * -4.1160E-001,-1.3336E-001,2.33610E-001 7.22019E-001,0.00000E+000,0.00000E+000 4.54219E-001,1.33617E-001,-9.3075E-004 -3.2315E-002,6.09980E-002,-1.3177E-002 -7.9051E-003,2.57547E-002,1.43495E-002 1.84562E+002,4.93985E-001,4.38023E-001 1.27099E-001,6.72574E-002,-9.3135E-002 -2.7225E-003,1.15437E-001,-2.2121E-003 1.01029E+001,-2.9805E+000,2.08620E+000 9.36750E-004,-1.7092E-003,-2.3201E-003 1.29396E-003,-2.1177E-003,-4.1008E-003 8.41743E-003,-1.4851E-003,4.35303E-004 -9.5201E-004,1.04529E-003,5.25582E-003 1.87532E+002,6.17204E+001,-1.3288E+001 8.13238E+000,1.21278E+000,5.03525E+000 -8.2712E-001,5.14285E+000,3.88124E-001 -1.4699E-002,5.82279E-003,1.09244E-003 2.59000E-002,2.70000E+001,5.00000E+000 4.93958E-010,4.93958E-010,7.56439E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 68.61, 1.298800e-04, 5.904500e-10, 0, 0.8 0.8, 0.6131, 0.3114, 0, 0 * *P+ diffusion:: * 124.9, 4.284200e-04, 1.775600e-10, 0, 0.85 0.85, 0.4679, 0.2957, 0, 0 * *METAL LAYER -- 1 * 5.070000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.790000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N05D.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N05D / DANIELE VENDOR: HP TECHNOLOGY: SCN FEATURE SIZE: 1.6um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Hewlett Packard 1.6um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 2.4/1.6 .795 -.843 V Vth (Vds=.05V) 14.4/1.6 .791 -.752 V Idss (Vgds=5V) 14.4/1.6 3205.0 -1338.0 uA Vpt (Id=1.0uA) 14.4/1.6 N/A -13.32 V Vth (Vds=.05V) 14.4/14.4 .824 -.777 V Vbkd (Ij=1.0uA) 14.4/14.4 14.6 -14.0 V Kp 14.4/14.4 33.6 14.78 uA/V^2 (Uo*Cox/2) Gamma 14.4/14.4 .279 .588 V^0.5 (2.5v,5.0v) Delta Length .349 .165 um Delta Width .197 .627 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. PROCESS N P N P METAL METAL PARAMETERS: POLY POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 24.3 25.8 63.7 128.8 .056 .030 Ohm/sq Width Variation -.321 -.306 -.172 -.310 .017 -.290 um (Measured - Drawn) Contact Resist. 11.46 19.32 40.65 46.38 ---- .058 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 249. ---- ---- ---- Angst. Area Cap .059 ---- .130 .440 ---- ---- fF/um^2 (Layer to subs) Fringe Cap ---- ---- .592 .182 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. IV. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Ring Oscillator Frequency 51.89 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N05D SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=hp *RUN=n05d *WAFER=7 *Gate-oxide thickness= 263.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 2.4/1.6, 4.8/1.6, 14.4/1.6, 14.4/4.0, 14.4/20.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=06-19-90 * *NMOS PARAMETERS * -1.09559E+00, 1.95019E-01,-1.55867E-02 8.05166E-01, 3.47913E-25,-2.49560E-24 1.45709E+00,-2.06260E-01,-3.69497E-02 2.81794E-01, 9.30552E-03,-1.14510E-01 -1.04899E-02, 2.35924E-02, 5.39782E-03 5.19616E+02,5.13190E-001,1.98740E-001 4.86399E-02, 7.79393E-02,-5.38345E-02 2.16677E-01, 2.91089E-01,-1.41866E-01 4.19788E+00,-5.64293E+00, 3.76155E+01 -6.98390E-04,-7.51894E-03, 2.30769E-05 2.04303E-03,-1.32296E-03,-7.25189E-03 -1.92162E-06,-1.83375E-03, 1.80859E-02 -9.84652E-03, 1.40492E-02, 1.63321E-02 6.63559E+02, 3.09201E+02,-2.43000E+02 -1.35301E+01, 2.40915E+01, 7.05898E+01 1.31721E+01, 5.86966E+01,-5.11501E+01 2.57524E-02, 4.34329E-02,-4.06637E-02 2.63000E-002, 2.70000E+01, 5.00000E+00 5.05357E-010,5.05357E-010,6.82863E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 263 Angstroms * * *PMOS PARAMETERS * -1.06797E+00, 8.62455E-01, 1.07077E-01 7.28405E-01, 0.00000E+00, 0.00000E+00 1.26173E+00,-1.03990E+00, 2.21621E-01 1.60633E-01,-2.27703E-01, 4.70433E-02 -1.67676E-02, 4.25314E-02, 9.17987E-03 2.14630E+02,2.91809E-001,5.51683E-001 1.47336E-01, 4.53459E-02,-8.21367E-02 -1.70831E-02, 1.72214E-01, 7.97867E-03 1.07461E+01,-2.32875E+00, 2.47174E+00 -8.36854E-03, 1.07015E-02,-3.13792E-03 -4.53351E-04,-1.21343E-03,-2.93796E-03 8.26012E-03,-1.42982E-03, 3.78574E-04 -7.76237E-05,-2.11881E-04, 1.17753E-02 2.43339E+02, 3.54880E+01, 7.49901E+00 1.32255E+01,-4.51642E+00, 9.87210E+00 -3.51020E-01, 4.76567E+00, 3.60190E-01 -9.75176E-03,-3.05066E-03, 1.34615E-03 2.63000E-002, 2.70000E+01, 5.00000E+00 2.87355E-010,2.87355E-010,7.87286E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 64.04, 1.024600e-04, 5.531000e-10, 1.000000e-08, 0.8 0.8, 0.6143, 0.3322, 0, 0 * *P+ diffusion:: * 128.9, 4.297000e-04, 1.961000e-10, 0, 0.85 0.85, 0.4652, 0.3182, 0, 0 * *METAL LAYER -- 1 * 5.600000e-02, 2.600000e-05, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.980000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0