[SCN20_VTI_PRM] The following are the parameters for the recent VTI 2.0u CMOS N-well runs. [M9AC.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: M9AC / CALVIN VENDOR: VTI TECHNOLOGY: SCN FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical VLSI Technology 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .817 -.782 V Vth (Vds=.05V) 18/2 .744 -.763 V Idss (Vgds=5V) 18/2 2559.0 -1162.0 uA Vpt (Id=1.0uA) 18/2 N/A -16.72 V Vth (Vds=.05V) 50/50 .810 -.787 V Vbkd (Ij=1.0uA) 50/50 18.3 -19.2 V Kp 50/50 25.9 10.17 uA/V^2 (Uo*Cox/2) Gamma 50/50 .498 .528 V^0.5 (2.5v,5.0v) Delta Length .242 .232 um Delta Width -.323 -.391 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 20.5 -22.6 V Vth (Vbs=0,I=1uA) Metal1 20.6 -19.9 V Vth (Vbs=0,I=1uA) Metal2 20.9 -15.0 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P N METAL METAL PARAMETERS: POLY POLY DIFF DIFF WELL 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 23.1 23.8 24.7 105.9 2564.0 .103 .045 Ohm/sq Width Variation .097 .068 .918 .234 ---- -.402 .680 um (Measured - Drawn) Contact Resist. 8.16 8.42 13.80 41.27 ---- ---- .153 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 401. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .039 .145 .251 .027 .022 fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .046 .027 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .049 fF/um^2 (Layer to Metal1) Fringe Cap ---- .565 .350 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.13 V Vinv, K = 1.5 2.31 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.00 V Vinv, K = 2.0 2.46 V Gain, K = 2.0 -11.03 Ring Oscillator Frequency 27.72 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. M9AC SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.199653U TOX=412.000000E-10 + NSUB=6.127500E+15 VTO=0.785304 KP=5.155000E-05 GAMMA=0.5029 + PHI=0.6 UO=574.39 UEXP=0.14276 UCRIT=71339.6 + DELTA=0.271895 VMAX=66094.8 XJ=0.250000U LAMBDA=2.872274E-02 + NFS=4.630490E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=22.900000 CGDO=2.510063E-10 CGSO=2.510063E-10 CGBO=5.344594E-10 + CJ=1.291000E-04 MJ=0.724300 CJSW=7.226000E-10 MJSW=0.382600 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.50 um .MODEL CMOSP PMOS LEVEL=2 LD=0.220676U TOX=412.000000E-10 + NSUB=6.534000E+15 VTO=-0.758127 KP=1.932000E-05 GAMMA=0.5557 + PHI=0.6 UO=230.5 UEXP=0.270375 UCRIT=40012.8 + DELTA=1.000063E-06 VMAX=66313.1 XJ=0.050000U LAMBDA=5.295172E-02 + NFS=8.859808E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=107.600000 CGDO=2.774366E-10 CGSO=2.774366E-10 CGBO=5.873159E-10 + CJ=2.871000E-04 MJ=0.634500 CJSW=3.369000E-10 MJSW=0.345900 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.28 um M9AC SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=vti *RUN=m9ac *WAFER=4 *Gate-oxide thickness= 412.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=11-22-89 * *NMOS PARAMETERS * -7.5290E-001,-1.4067E-001,9.27740E-002 7.46750E-001,0.00000E+000,0.00000E+000 9.88823E-001,1.62800E-001,2.03936E-001 1.08476E-001,1.73563E-001,-1.2216E-001 -8.6779E-003,2.05081E-002,1.39611E-002 5.87442E+002,4.21610E-001,-5.66770E-001 5.10082E-002,5.54135E-002,-2.9857E-002 6.19386E-002,8.71826E-001,-5.5545E-001 7.71556E+000,-1.1821E+001,5.40946E+001 -5.6805E-004,-1.2993E-002,-2.4351E-003 8.50187E-004,-1.4466E-003,-1.0628E-002 1.01386E-003,-3.0728E-003,1.92974E-002 -2.0091E-002,3.57457E-002,7.32890E-002 6.63283E+002,5.11339E+002,-5.6514E+001 -1.2627E+001,3.43381E+001,1.33296E+002 3.82740E+000,8.82534E+001,-4.5705E+001 1.08573E-002,8.63640E-002,-7.0326E-002 4.13000E-002,2.70000E+001,5.00000E+000 2.64385E-010,2.64385E-010,5.18763E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 412 Angstroms * * *PMOS PARAMETERS * -4.7458E-001,3.23537E-002,1.03314E-001 6.83300E-001,0.00000E+000,0.00000E+000 6.38503E-001,-4.6370E-002,-5.1993E-002 1.89273E-002,5.25611E-002,-5.0009E-002 -1.1975E-002,4.17880E-002,-4.4076E-003 2.22335E+002,4.78341E-001,-2.96230E-001 1.14924E-001,6.28610E-002,-1.0126E-001 1.98580E-002,2.47421E-001,-5.0555E-003 9.22734E+000,-4.8288E+000,6.66500E+000 -1.5255E-003,-2.4394E-003,-1.5679E-003 7.50836E-004,-2.5847E-003,3.64504E-003 4.87183E-003,-1.5847E-003,2.02175E-005 2.00802E-003,3.83148E-003,9.92587E-003 2.40287E+002,1.00620E+002,1.13386E+002 8.05444E+000,1.92705E+000,1.50036E+001 -5.4106E-001,1.18733E+001,-3.6684E+000 -1.6820E-002,3.31330E-004,9.48023E-003 4.13000E-002,2.70000E+001,5.00000E+000 2.99960E-010,2.99960E-010,5.84095E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 25.46, 1.291000e-04, 7.226000e-10, 0, 0.8 0.8, 0.7243, 0.3826, 0, 0 * *P+ diffusion:: * 107.6, 2.870000e-04, 3.370000e-10, 1.000000e-08, 0.8 0.8, 0.6345, 0.3459, 0, 0 * *METAL LAYER -- 1 * 0.1091, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 4.600000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [M9BH.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: M9BH / HALLOWEENIE VENDOR: VTI TECHNOLOGY: SCN FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical VLSI Technology 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .817 -.779 V Vth (Vds=.05V) 18/2 .776 -.755 V Idss (Vgds=5V) 18/2 2455.0 -1112.0 uA Vpt (Id=1.0uA) 18/2 N/A -16.62 V Vth (Vds=.05V) 50/50 .832 -.786 V Vbkd (Ij=1.0uA) 50/50 19.1 -17.7 V Kp 50/50 24.8 9.80 uA/V^2 (Uo*Cox/2) Gamma 50/50 .505 .522 V^0.5 (2.5v,5.0v) Delta Length .249 .197 um Delta Width .443 .191 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 22.1 -25.9 V Vth (Vbs=0,I=1uA) Metal1 21.8 -21.8 V Vth (Vbs=0,I=1uA) Metal2 22.1 -15.2 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P N METAL METAL PARAMETERS: POLY POLY DIFF DIFF WELL 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 22.1 22.5 22.8 106.5 2611.0 .108 .045 Ohm/sq Width Variation -.191 -.181 .786 .338 ---- .120 .421 um (Measured - Drawn) Contact Resist. 7.89 7.49 12.24 39.44 ---- ---- .181 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 405. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .038 .120 .255 .027 .021 fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .046 .025 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .047 fF/um^2 (Layer to Metal1) Fringe Cap ---- .533 .329 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.11 V Vinv, K = 1.5 2.30 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.01 V Vinv, K = 2.0 2.44 V Gain, K = 2.0 -10.52 Ring Oscillator Frequency 30.14 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. M9BH SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.181362U TOX=402.000000E-10 + NSUB=6.567000E+15 VTO=0.805287 KP=4.757000E-05 GAMMA=0.5435 + PHI=0.6 UO=553.83 UEXP=0.151038 UCRIT=48309.6 + DELTA=0.823727 VMAX=50459.8 XJ=0.250000U LAMBDA=3.437039E-02 + NFS=4.094390E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=19.340000 CGDO=2.336825E-10 CGSO=2.336825E-10 CGBO=7.582249E-10 + CJ=1.011600E-04 MJ=0.633000 CJSW=5.320000E-10 MJSW=0.266000 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.40 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=402.000000E-10 + NSUB=6.786000E+15 VTO=-0.758994 KP=1.843000E-05 GAMMA=0.5525 + PHI=0.6 UO=214.5 UEXP=0.253978 UCRIT=40136.1 + DELTA=0.135535 VMAX=78961.6 XJ=0.050000U LAMBDA=4.876526E-02 + NFS=4.352678E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=107.700000 CGDO=3.221216E-10 CGSO=3.221216E-10 CGBO=6.309201E-10 + CJ=2.474000E-04 MJ=0.548900 CJSW=3.155000E-10 MJSW=0.327000 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.12 um M9BH SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=vti *RUN=m9bh *WAFER=10 *Gate-oxide thickness= 402.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=12-17-89 * *NMOS PARAMETERS * -8.4552E-001,1.17838E-001,-4.3617E-001 7.66105E-001,0.00000E+000,0.00000E+000 1.11070E+000,-1.3637E-001,1.04360E+000 1.41610E-001,9.82319E-002,1.18024E-001 -9.5057E-003,3.27318E-002,3.87438E-003 5.50470E+002,5.62881E-001,-4.68110E-001 5.09281E-002,5.57554E-002,-5.0021E-002 6.60898E-002,7.69222E-001,-4.5799E-001 6.34014E+000,-7.3467E+000,5.79602E+001 -5.2465E-004,-1.2471E-002,-7.5158E-003 9.73806E-004,-2.9187E-003,-9.5390E-003 7.42810E-004,-1.1164E-003,2.18112E-002 -2.0943E-002,3.29313E-002,9.56698E-002 6.47035E+002,4.00466E+002,5.98687E+001 -1.3334E+001,3.50117E+001,1.62283E+002 5.49196E+000,7.30924E+001,-3.9118E+001 1.42938E-002,6.90761E-002,-5.2402E-002 4.02000E-002,2.70000E+001,5.00000E+000 3.62632E-010,3.62632E-010,5.45967E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 401 Angstroms * * *PMOS PARAMETERS * -5.1082E-001,1.91361E-001,-2.6114E-001 6.90798E-001,0.00000E+000,0.00000E+000 6.71299E-001,-2.0830E-001,3.39061E-001 2.68906E-002,4.72160E-003,4.86370E-002 -1.3023E-002,5.03105E-002,-1.3027E-002 2.05482E+002,5.84198E-001,-1.79380E-001 1.09459E-001,6.22414E-002,-1.0530E-001 1.31888E-002,2.28996E-001,2.10325E-002 8.72387E+000,-4.7526E+000,6.52618E+000 -1.1021E-003,-2.0432E-003,-5.3109E-003 1.04859E-003,-2.9505E-003,1.90332E-003 4.98262E-003,-2.3527E-003,1.27665E-003 -1.2923E-004,5.19245E-003,1.57702E-002 2.24581E+002,7.41682E+001,1.30467E+002 7.47214E+000,3.34250E-001,1.87019E+001 -5.2156E-001,9.90940E+000,9.06654E-001 -1.6420E-002,1.79381E-004,1.53539E-002 4.02000E-002,2.70000E+001,5.00000E+000 3.76366E-010,3.76366E-010,6.16328E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 19.34, 1.011600e-04, 5.320000e-10, 0, 0.8 0.8, 0.633, 0.266, 0, 0 * *P+ diffusion:: * 107.7, 2.474000e-04, 3.155000e-10, 0, 0.8 0.8, 0.5489, 0.327, 0, 0 * *METAL LAYER -- 1 * 0.1061, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 4.450000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [M9BJ.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: M9BJ / JERICHO89 VENDOR: VTI TECHNOLOGY: SCN FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical VLSI Technology 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .812 -.791 V Vth (Vds=.05V) 18/2 .740 -.769 V Idss (Vgds=5V) 18/2 2809.0 -1302.0 uA Vpt (Id=1.0uA) 18/2 N/A -16.52 V Vth (Vds=.05V) 50/50 .806 -.811 V Vbkd (Ij=1.0uA) 50/50 19.0 -17.7 V Kp 50/50 25.6 10.13 uA/V^2 (Uo*Cox/2) Gamma 50/50 .496 .515 V^0.5 (2.5v,5.0v) Delta Length .478 .358 um Delta Width .243 .059 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 21.7 -24.1 V Vth (Vbs=0,I=1uA) Metal1 21.7 -20.8 V Vth (Vbs=0,I=1uA) Metal2 21.6 -15.1 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P N METAL METAL PARAMETERS: POLY POLY DIFF DIFF WELL 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 21.8 22.3 21.9 102.7 2635.0 .105 .044 Ohm/sq Width Variation -.369 -.329 .293 .222 ---- .015 .965 um (Measured - Drawn) Contact Resist. 7.64 7.77 13.08 39.53 ---- ---- .142 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 394. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .039 .126 .258 .027 .021 fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .045 .027 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .051 fF/um^2 (Layer to Metal1) Fringe Cap ---- .562 .334 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.07 V Vinv, K = 1.5 2.30 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.01 V Vinv, K = 2.0 2.45 V Gain, K = 2.0 -10.16 Ring Oscillator Frequency 31.81 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. M9BJ SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.208764U TOX=401.000000E-10 + NSUB=6.422000E+15 VTO=0.754546 KP=4.821000E-05 GAMMA=0.5362 + PHI=0.6 UO=559.83 UEXP=0.146612 UCRIT=71923.1 + DELTA=0.506803 VMAX=66354.9 XJ=0.250000U LAMBDA=3.191846E-02 + NFS=3.809939E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=24.580000 CGDO=2.696604E-10 CGSO=2.696604E-10 CGBO=7.785437E-10 + CJ=1.085700E-04 MJ=0.682400 CJSW=5.505200E-10 MJSW=0.279800 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.87 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=401.000000E-10 + NSUB=6.836200E+15 VTO=-0.763626 KP=1.960000E-05 GAMMA=0.5532 + PHI=0.6 UO=227.571 UEXP=0.290331 UCRIT=47609.9 + DELTA=1.000000E-06 VMAX=100000 XJ=0.050000U LAMBDA=5.341623E-02 + NFS=2.775963E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=103.700000 CGDO=3.229249E-10 CGSO=3.229249E-10 CGBO=6.058196E-10 + CJ=2.515600E-04 MJ=0.552500 CJSW=3.333800E-10 MJSW=0.337600 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.08 um M9BJ SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=vti *RUN=m9bj *WAFER=4 *Gate-oxide thickness= 401.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 6.0/4.0, 12.0/4.0, 36.0/4.0, 36.0/10.0, 36.0/50.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=01-21-90 * *NMOS PARAMETERS * -8.1073E-001,1.15629E-002,-1.2886E-001 7.53297E-001,0.00000E+000,0.00000E+000 1.04527E+000,4.72297E-002,3.34609E-001 1.31508E-001,1.50705E-001,-1.1033E-001 -7.3209E-003,3.87634E-002,-3.4448E-002 5.72999E+002,5.73747E-001,-4.76810E-001 5.07384E-002,4.96214E-002,-3.1748E-002 5.84390E-002,7.67082E-001,-3.7286E-001 7.67965E+000,-9.6861E+000,5.27389E+001 -3.3310E-004,-1.1886E-002,-5.6308E-003 1.02512E-003,5.26557E-004,-1.8685E-002 1.43080E-003,-2.1285E-003,1.80621E-002 -2.3304E-002,3.64328E-002,8.14384E-002 6.70280E+002,3.76794E+002,1.94118E+002 -1.2088E+001,3.56961E+001,1.35886E+002 3.59166E+000,6.79850E+001,-1.0309E+000 1.10933E-002,6.88700E-002,-3.4397E-002 4.01000E-002,2.70000E+001,5.00000E+000 3.70554E-010,3.70554E-010,1.07050E-009 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 401 Angstroms * * *PMOS PARAMETERS * -4.2107E-001,5.75264E-002,-1.1415E-001 6.88341E-001,0.00000E+000,0.00000E+000 5.86694E-001,-5.1671E-002,1.97792E-001 1.13489E-002,4.26962E-002,1.89640E-002 -1.2665E-002,4.65571E-002,-1.3545E-002 2.12966E+002,7.70706E-001,1.66679E-001 1.11186E-001,6.40075E-002,-1.1228E-001 2.32535E-002,1.76938E-001,-1.2020E-002 9.30754E+000,-4.9170E+000,5.30790E+000 -4.8187E-004,-3.3407E-003,-2.6922E-003 1.06060E-003,-2.3494E-003,1.14357E-003 5.73247E-003,-2.4045E-003,-2.5848E-003 -2.6377E-004,4.14856E-003,1.28568E-002 2.33926E+002,6.59599E+001,1.45600E+002 7.80746E+000,6.48197E-001,1.52279E+001 -3.7589E-001,9.32038E+000,2.81218E+000 -1.5800E-002,3.95226E-003,1.00509E-002 4.01000E-002,2.70000E+001,5.00000E+000 4.97760E-010,4.97760E-010,1.21196E-009 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 24.58, 1.085700e-04, 5.505200e-10, 1.000000e-08, 0.8 0.8, 0.6824, 0.2798, 0, 0 * *P+ diffusion:: * 103.7, 2.515600e-04, 3.333800e-10, 0, 0.8 0.8, 0.5525, 0.3376, 0, 0 * *METAL LAYER -- 1 * 0.1061, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 4.470000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [M9CL.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: M9CL / LANETTE VENDOR: VTI TECHNOLOGY: SCN FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical VLSI Technology 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .812 -.772 V Vth (Vds=.05V) 18/2 .752 -.761 V Idss (Vgds=5V) 18/2 2846.0 -1308.0 uA Vpt (Id=1.0uA) 18/2 N/A -16.50 V Vth (Vds=.05V) 50/50 .812 -.803 V Vbkd (Ij=1.0uA) 50/50 18.7 -17.7 V Kp 50/50 22.8 11.14 uA/V^2 (Uo*Cox/2) Gamma 50/50 .533 .490 V^0.5 (2.5v,5.0v) Delta Length .498 .414 um Delta Width .340 .253 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 22.3 -14.7 V Vth (Vbs=0,I=1uA) Metal1 22.1 -20.0 V Vth (Vbs=0,I=1uA) Metal2 22.3 -23.0 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P N METAL METAL PARAMETERS: POLY POLY DIFF DIFF WELL 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 21.9 22.4 28.1 107.5 2602.0 .111 .044 Ohm/sq Width Variation -.354 -.338 .775 .371 ---- .415 .856 um (Measured - Drawn) Contact Resist. 6.71 6.85 12.29 38.58 ---- ---- .181 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 394. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .039 .138 .285 .026 .020 fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .044 .024 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .047 fF/um^2 (Layer to Metal1) Fringe Cap ---- .566 .340 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.11 V Vinv, K = 1.5 2.31 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.00 V Vinv, K = 2.0 2.46 V Gain, K = 2.0 N/A Ring Oscillator Frequency 35.26 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. M9CL SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.250000U TOX=404.000000E-10 + NSUB=7.358422E+15 VTO=0.765553 KP=4.774000E-05 GAMMA=0.5782 + PHI=0.6 UO=558.5 UEXP=0.188446 UCRIT=119046 + DELTA=0.865345 VMAX=71371 XJ=0.250000U LAMBDA=2.857750E-02 + NFS=3.772152E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=29.680000 CGDO=3.205270E-10 CGSO=3.205270E-10 CGBO=5.794083E-10 + CJ=1.261100E-04 MJ=0.702500 CJSW=5.577000E-10 MJSW=0.286400 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.33 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=404.000000E-10 + NSUB=5.788620E+15 VTO=-0.769587 KP=2.107000E-05 GAMMA=0.5129 + PHI=0.6 UO=246.5 UEXP=0.300515 UCRIT=44353.4 + DELTA=1.000000E-06 VMAX=100000 XJ=0.050000U LAMBDA=4.677269E-02 + NFS=1.000000E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=109.700000 CGDO=3.205270E-10 CGSO=3.205270E-10 CGBO=5.984090E-10 + CJ=2.469000E-04 MJ=0.552800 CJSW=3.244000E-10 MJSW=0.330100 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.25 um M9CL SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=vti *RUN=m9cl *WAFER=11 *Gate-oxide thickness= 404.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=26-02-90 * *NMOS PARAMETERS * -7.5038E-001,-4.2936E-002,-3.6657E-001 7.57568E-001,0.00000E+000,0.00000E+000 9.71750E-001,6.55413E-002,7.52168E-001 9.58589E-002,1.58433E-001,2.09040E-002 -7.5678E-003,2.97701E-002,-1.3867E-002 6.14589E+002,5.64602E-001,-5.82470E-001 5.11830E-002,5.72243E-002,-3.8203E-002 6.17272E-002,8.24194E-001,-5.1184E-001 7.31549E+000,-1.1081E+001,4.73281E+001 -4.0505E-004,-1.2682E-002,-7.0821E-003 5.63958E-004,-8.8428E-004,-9.0266E-003 1.00140E-003,-3.1945E-003,1.50622E-002 -1.9185E-002,3.61326E-002,7.31183E-002 6.58574E+002,5.32459E+002,1.96506E+001 -1.5044E+001,3.79290E+001,1.33541E+002 3.22768E+000,8.07124E+001,-2.4507E+001 9.51704E-003,7.22258E-002,-4.3946E-002 4.04000E-002,2.70000E+001,5.00000E+000 3.61940E-010,3.61940E-010,5.17523E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 403 Angstroms * * *PMOS PARAMETERS * -3.2256E-001,-3.5817E-002,2.41822E-001 6.49187E-001,0.00000E+000,0.00000E+000 5.30716E-001,-1.8489E-003,-2.6009E-001 -3.3957E-003,6.85100E-002,-1.3027E-001 -8.5969E-003,4.84094E-002,-5.4720E-003 2.29508E+002,5.82773E-001,-3.54810E-001 1.21519E-001,5.17068E-002,-8.1097E-002 1.61242E-002,2.25745E-001,-2.4974E-002 9.76594E+000,-4.7173E+000,5.94763E+000 -3.9966E-004,-2.9233E-003,-3.2968E-003 8.32372E-004,-2.5465E-003,-1.9178E-003 5.70779E-003,-1.7333E-003,-9.3240E-004 -8.8826E-004,1.66162E-003,1.63085E-002 2.35618E+002,1.00626E+002,8.12322E+001 7.87229E+000,2.03118E-001,1.35507E+001 -8.0333E-001,1.04278E+001,3.77637E+000 -1.4884E-002,-2.5706E-003,1.80929E-002 4.04000E-002,2.70000E+001,5.00000E+000 3.73589E-010,3.73589E-010,5.72910E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 29.68, 1.261100e-04, 5.577000e-10, 0, 0.8 0.8, 0.7025, 0.2864, 0, 0 * *P+ diffusion:: * 109.7, 2.469000e-04, 3.244000e-10, 0, 0.8 0.8, 0.5528, 0.3301, 0, 0 * *METAL LAYER -- 1 * 0.1116, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 4.480000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N01P.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N01P / PINA VENDOR: VTI TECHNOLOGY: SCN FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical VLSI Technology 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .812 -.782 V Vth (Vds=.05V) 18/2 .760 -.764 V Idss (Vgds=5V) 18/2 2746.0 -1264.0 uA Vpt (Id=1.0uA) 18/2 N/A -16.41 V Vth (Vds=.05V) 50/50 .835 -.806 V Vbkd (Ij=1.0uA) 50/50 18.8 -17.6 V Kp 50/50 26.5 10.23 uA/V^2 (Uo*Cox/2) Gamma 50/50 .535 .514 V^0.5 (2.5v,5.0v) Delta Length .465 .366 um Delta Width .521 .515 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 21.6 -14.1 V Vth (Vbs=0,I=1uA) Metal1 20.2 -17.5 V Vth (Vbs=0,I=1uA) Metal2 21.6 -20.6 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P N METAL METAL PARAMETERS: POLY POLY DIFF DIFF WELL 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 22.8 23.2 31.1 102.6 2660.0 .122 .047 Ohm/sq Width Variation -.380 -.371 .902 .579 ---- .096 .615 um (Measured - Drawn) Contact Resist. 7.23 7.38 12.55 35.31 ---- ---- .171 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 403. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .039 .141 .258 .027 .021 fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .044 .024 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .047 fF/um^2 (Layer to Metal1) Fringe Cap ---- .566 .362 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.09 V Vinv, K = 1.5 2.29 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.00 V Vinv, K = 2.0 2.44 V Gain, K = 2.0 -11.63 Ring Oscillator Frequency 31.76 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N01P SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.250000U TOX=410.000000E-10 + NSUB=8.358422E+15 VTO=0.816866 KP=5.883000E-05 GAMMA=0.6254 + PHI=0.6 UO=698.5 UEXP=0.169549 UCRIT=27275.7 + DELTA=2.33983 VMAX=68149.4 XJ=0.250000U LAMBDA=2.951013E-02 + NFS=3.912943E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=19.400000 CGDO=3.158363E-10 CGSO=3.158363E-10 CGBO=5.459241E-10 + CJ=1.400700E-04 MJ=0.782300 CJSW=7.096400E-10 MJSW=0.382500 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.46 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=410.000000E-10 + NSUB=5.613789E+15 VTO=-0.782334 KP=2.000000E-05 GAMMA=0.5126 + PHI=0.6 UO=237.5 UEXP=0.261971 UCRIT=37097 + DELTA=2.580969E-06 VMAX=100000 XJ=0.050000U LAMBDA=3.989719E-02 + NFS=1.000000E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=101.300000 CGDO=3.158363E-10 CGSO=3.158363E-10 CGBO=5.393152E-10 + CJ=2.502200E-04 MJ=0.545500 CJSW=3.278600E-10 MJSW=0.325800 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.49 um N01P SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=vti *RUN=n01p *WAFER=3 *Gate-oxide thickness= 410.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=03-08-90 * *NMOS PARAMETERS * -7.2613E-001,-2.7409E-001,3.36996E-001 7.51831E-001,0.00000E+000,0.00000E+000 9.74535E-001,3.65493E-001,-2.5677E-001 8.67209E-002,2.32651E-001,-2.8028E-001 -5.7310E-003,2.39457E-002,-2.7618E-002 5.92419E+002,6.48403E-001,-5.60730E-001 4.97465E-002,6.11851E-002,-6.6228E-002 5.09882E-002,7.15722E-001,-3.6434E-001 8.75685E+000,-1.1632E+001,2.51763E+001 6.18452E-004,-1.4420E-002,-5.8372E-003 8.34502E-004,-1.8480E-003,-4.0338E-003 1.61691E-003,-3.5352E-003,4.12086E-003 -1.7799E-002,3.15709E-002,7.35248E-002 6.24311E+002,4.92928E+002,5.51666E+001 -1.3187E+001,3.45055E+001,9.43867E+001 3.85820E+000,8.00783E+001,-4.7484E+001 1.02074E-002,7.09099E-002,-6.6009E-002 4.10000E-002,2.70000E+001,5.00000E+000 4.09578E-010,4.09578E-010,5.21079E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 410 Angstroms * * *PMOS PARAMETERS * -5.2696E-001,1.45263E-001,-3.6665E-001 7.08484E-001,0.00000E+000,0.00000E+000 6.89350E-001,-2.5648E-001,8.42606E-001 4.00720E-002,-2.6911E-002,2.53857E-001 -1.0569E-002,4.05666E-002,2.07427E-002 2.23528E+002,6.72868E-001,-2.89220E-001 1.12440E-001,5.23827E-002,-7.9090E-002 2.19241E-002,2.13571E-001,-6.4806E-002 1.00660E+001,-6.1535E+000,8.56333E+000 -3.3887E-004,-5.4447E-003,5.76587E-003 1.38099E-003,-2.7570E-003,-1.3813E-003 6.31603E-003,-4.5093E-003,3.26352E-003 -1.5501E-003,6.72553E-003,4.74905E-003 2.37919E+002,7.25831E+001,1.81246E+002 8.74530E+000,-1.2818E+000,2.02445E+001 -1.2452E+000,1.00856E+001,1.02505E+001 -1.7018E-002,1.07035E-003,3.04459E-002 4.10000E-002,2.70000E+001,5.00000E+000 4.25032E-010,4.25032E-010,5.86807E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 19.4, 1.400700e-04, 7.096400e-10, 0, 0.8 0.8, 0.7823, 0.3825, 0, 0 * *P+ diffusion:: * 101.3, 2.502200e-04, 3.278600e-10, 0, 0.8 0.8, 0.5455, 0.3258, 0, 0 * *METAL LAYER -- 1 * 0.1202, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 4.620000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N02T.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N02T / TRISTAN VENDOR: VTI TECHNOLOGY: SCN FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical VLSI Technology 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .817 -.773 V Vth (Vds=.05V) 18/2 .740 -.764 V Idss (Vgds=5V) 18/2 2706.0 -1171.0 uA Vpt (Id=1.0uA) 18/2 N/A -16.08 V Vth (Vds=.05V) 50/50 .813 -.785 V Vbkd (Ij=1.0uA) 50/50 18.9 -17.2 V Kp 50/50 24.4 11.66 uA/V^2 (Uo*Cox/2) Gamma 50/50 .503 .521 V^0.5 (2.5v,5.0v) Delta Length .323 .187 um Delta Width .386 .215 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 21.6 -14.0 V Vth (Vbs=0,I=1uA) Metal1 21.4 -19.8 V Vth (Vbs=0,I=1uA) Metal2 21.6 -24.0 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P N METAL METAL PARAMETERS: POLY POLY DIFF DIFF WELL 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 22.3 23.0 25.7 87.9 2643.0 .110 .045 Ohm/sq Width Variation -.232 -.208 .791 .374 ---- .119 .414 um (Measured - Drawn) Contact Resist. 7.23 7.42 10.53 30.39 ---- ---- .153 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 396. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .039 .120 .283 .027 .020 fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .044 .025 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .049 fF/um^2 (Layer to Metal1) Fringe Cap ---- .562 .330 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.04 V Vinv, K = 1.5 2.24 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 4.99 V Vinv, K = 2.0 2.40 V Gain, K = 2.0 -10.96 Ring Oscillator Frequency 31.25 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N02T SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.250000U TOX=407.000000E-10 + NSUB=6.289058E+15 VTO=0.779117 KP=5.167000E-05 GAMMA=0.5385 + PHI=0.6 UO=608.8 UEXP=0.132101 UCRIT=32110.5 + DELTA=2.78717 VMAX=60367.3 XJ=0.250000U LAMBDA=3.503483E-02 + NFS=4.387229E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=27.400000 CGDO=3.181644E-10 CGSO=3.181644E-10 CGBO=5.524552E-10 + CJ=1.008000E-04 MJ=0.644800 CJSW=6.369000E-10 MJSW=0.345400 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.43 um .MODEL CMOSP PMOS LEVEL=2 LD=0.216440U TOX=407.000000E-10 + NSUB=7.113789E+15 VTO=-0.77632 KP=2.210000E-05 GAMMA=0.5728 + PHI=0.6 UO=260.5 UEXP=0.296141 UCRIT=33335.2 + DELTA=4.383185E-05 VMAX=34955.1 XJ=0.050000U LAMBDA=5.714336E-02 + NFS=1.000000E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=88.400000 CGDO=2.754540E-10 CGSO=2.754540E-10 CGBO=6.116211E-10 + CJ=2.451000E-04 MJ=0.547300 CJSW=2.971000E-10 MJSW=0.313100 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.19 um N02T SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=vti *RUN=n02t *WAFER=2 *Gate-oxide thickness= 407.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=04-06-90 * *NMOS PARAMETERS * -8.13207E-01, 3.45269E-02,-7.66213E-02 7.52090E-01, 0.00000E+00, 2.41995E-24 1.06492E+00,-6.62618E-02, 5.40153E-01 1.34501E-01, 1.15125E-01,-2.11700E-02 -1.13887E-02, 2.98232E-02, 4.95563E-03 5.81393E+02,6.13085E-001,-3.57793E-001 4.93279E-02, 5.42589E-02,-3.00643E-02 8.47887E-02, 7.47299E-01,-6.66080E-01 6.41066E+00,-6.58781E+00, 5.60645E+01 -9.34548E-04,-1.20190E-02,-4.63236E-04 1.12894E-03,-1.24725E-03,-1.00244E-02 4.48267E-04,-4.78771E-04, 2.08782E-02 -1.69760E-02, 3.51609E-02, 4.60193E-02 6.93568E+02, 4.04608E+02, 2.36240E+00 -1.25134E+01, 4.19141E+01, 1.23419E+02 5.28074E+00, 7.60366E+01,-3.77304E+01 1.35677E-02, 6.97044E-02,-6.76309E-02 4.07000E-002, 2.70000E+01, 5.00000E+00 3.90124E-010,3.90124E-010,5.71192E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 406 Angstroms * * *PMOS PARAMETERS * -4.55377E-01, 5.45353E-02, 4.23563E-02 6.82836E-01, 6.18682E-25,-2.58088E-24 6.34208E-01,-1.31242E-01, 1.21266E-01 2.50765E-02, 2.13030E-02, 9.69093E-03 -7.50731E-03, 4.25560E-02, 7.72286E-04 2.45684E+02,2.69599E-001,-5.94182E-001 1.22466E-01, 4.02102E-02,-7.50516E-02 5.32746E-03, 3.61191E-01,-9.78839E-02 1.05728E+01,-6.77748E+00, 7.62357E+00 -1.01906E-03,-3.73717E-03, 1.77547E-04 5.55142E-04,-2.69633E-03,-1.06549E-03 6.46370E-03,-6.04421E-03, 2.74063E-03 -2.18228E-03, 1.03685E-02, 1.35564E-02 2.42901E+02, 1.67717E+02, 1.10048E+01 8.73680E+00, 1.41359E+00, 1.52824E+01 -9.40967E-01, 1.28045E+01, 8.16805E-01 -1.75573E-02,-7.04114E-03, 3.07075E-02 4.07000E-002, 2.70000E+01, 5.00000E+00 1.71554E-010,1.71554E-010,5.13824E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 27.4, 1.008000e-04, 6.369000e-10, 0, 0.8 0.8, 0.6448, 0.3454, 0, 0 * *P+ diffusion:: * 88.4, 2.451000e-04, 2.971000e-10, 0, 0.8 0.8, 0.5473, 0.3131, 0, 0 * *METAL LAYER -- 1 * 0.11, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 4.500000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N03W.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N03W / WUU_TZYH-YUNG VENDOR: VTI TECHNOLOGY: SCN FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical VLSI Technology 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .786 -.805 V Vth (Vds=.05V) 18/2 .717 -.787 V Idss (Vgds=5V) 18/2 2847.0 -1241.0 uA Vpt (Id=1.0uA) 18/2 N/A -16.17 V Vth (Vds=.05V) 50/50 .787 -.819 V Vbkd (Ij=1.0uA) 50/50 19.2 -17.4 V Kp 50/50 25.6 11.92 uA/V^2 (Uo*Cox/2) Gamma 50/50 .489 .494 V^0.5 (2.5v,5.0v) Delta Length .360 .334 um Delta Width .480 .276 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 22.2 -15.1 V Vth (Vbs=0,I=1uA) Metal1 21.3 -20.3 V Vth (Vbs=0,I=1uA) Metal2 22.1 -23.9 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P N METAL METAL PARAMETERS: POLY POLY DIFF DIFF WELL 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 22.9 23.8 28.1 99.8 2606.0 .114 .045 Ohm/sq Width Variation -.203 -.177 .753 .447 ---- .022 .553 um (Measured - Drawn) Contact Resist. 6.95 7.15 11.18 33.27 ---- ---- .152 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 378. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .037 .125 .261 .026 .018 fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .044 .024 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .048 fF/um^2 (Layer to Metal1) Fringe Cap ---- .574 .347 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.02 V Vinv, K = 1.5 2.23 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 4.99 V Vinv, K = 2.0 2.39 V Gain, K = 2.0 -10.67 Ring Oscillator Frequency 32.68 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N03W SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.250000U TOX=381.000000E-10 + NSUB=6.255911E+15 VTO=0.744791 KP=5.440000E-05 GAMMA=0.5028 + PHI=0.6 UO=600.27 UEXP=0.14153 UCRIT=41963.3 + DELTA=2.71818 VMAX=57832.4 XJ=0.250000U LAMBDA=3.638107E-02 + NFS=4.055178E+12 NEFF=1 NSS=1.000000E+10 TPG=1.000000 + RSH=27.650000 CGDO=3.398764E-10 CGSO=3.398764E-10 CGBO=5.650828E-10 + CJ=1.077200E-04 MJ=0.681700 CJSW=5.676500E-10 MJSW=0.298800 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.42 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=381.000000E-10 + NSUB=6.711379E+15 VTO=-0.797183 KP=2.243000E-05 GAMMA=0.5208 + PHI=0.6 UO=247.53 UEXP=0.28446 UCRIT=35127.2 + DELTA=1.011081E-06 VMAX=39132.8 XJ=0.050000U LAMBDA=5.556814E-02 + NFS=1.000000E+11 NEFF=1.001 NSS=1.000000E+10 TPG=-1.000000 + RSH=100.800000 CGDO=3.398764E-10 CGSO=3.398764E-10 CGBO=6.007804E-10 + CJ=2.526200E-04 MJ=0.549700 CJSW=3.175900E-10 MJSW=0.333900 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.27 um N03W SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=vti *RUN=n03w *WAFER=29 *Gate-oxide thickness= 381.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=05-23-90 * *NMOS PARAMETERS * -7.42553E-01,-9.84204E-02,-2.60296E-01 7.58400E-01, 0.00000E+00, 0.00000E+00 9.14945E-01, 1.40049E-01, 5.66375E-01 9.06681E-02, 1.66030E-01,-2.60058E-02 -9.35698E-03, 2.47932E-02,-1.17810E-02 5.85201E+02,6.38462E-001,-1.86943E-001 5.11531E-02, 5.98265E-02,-5.63744E-02 8.12277E-02, 6.90890E-01,-4.10730E-01 8.35199E+00,-8.18199E+00, 2.85792E+01 5.97103E-05,-1.27525E-02,-4.69663E-03 1.17629E-03,-3.59177E-04,-1.00729E-02 1.51298E-03,-1.15777E-03, 4.93450E-03 -1.90630E-02, 3.01359E-02, 7.04279E-02 6.61954E+02, 4.14026E+02, 1.82683E+02 -1.33542E+01, 3.67177E+01, 1.02096E+02 4.47327E+00, 7.03260E+01,-1.13216E+00 1.13873E-02, 6.52273E-02,-3.75455E-02 3.81000E-002, 2.70000E+01, 5.00000E+00 4.33996E-010,4.33996E-010,6.22426E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 381 Angstroms * * *PMOS PARAMETERS * -1.73136E-01,-2.75371E-01, 3.54817E-01 6.64827E-01, 0.00000E+00,-9.35615E-24 3.59627E-01, 2.71102E-01,-3.16889E-01 -4.24063E-02, 1.26833E-01,-1.15670E-01 -4.40355E-03, 3.36207E-02, 1.64790E-02 2.28152E+02,5.79099E-001,-2.64790E-001 1.23259E-01, 4.01472E-02,-4.94207E-02 1.61432E-02, 2.38126E-01,-1.11094E-01 9.85036E+00,-6.22361E+00, 7.67540E+00 6.92381E-04,-6.20673E-03, 4.22005E-03 6.85794E-04,-1.78899E-03,-4.82480E-03 6.05173E-03,-4.18078E-03, 2.91701E-03 -1.51076E-03, 8.47083E-03,-3.05856E-03 2.24323E+02, 1.04696E+02, 6.07147E+01 6.82673E+00, 3.14378E+00, 5.53779E+00 -1.36871E+00, 9.82919E+00, 3.72017E+00 -1.84738E-02, 4.22672E-04, 2.31381E-02 3.81000E-002, 2.70000E+01, 5.00000E+00 3.93644E-010,3.93644E-010,6.03115E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 23.08, 1.077200e-04, 5.676500e-10, 0, 0.8 0.8, 0.6817, 0.2988, 0, 0 * *P+ diffusion:: * 100.8, 2.526200e-04, 3.175900e-10, 0, 0.8 0.8, 0.5497, 0.3339, 0, 0 * *METAL LAYER -- 1 * 0.114, 2.600000e-05, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 4.500000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N04C.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N04C / CLAUDETTE VENDOR: VTI TECHNOLOGY: SCN FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical VLSI Technology 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .800 -.788 V Vth (Vds=.05V) 18/2 .728 -.771 V Idss (Vgds=5V) 18/2 2754.0 -1207.0 uA Vpt (Id=1.0uA) 18/2 N/A -15.93 V Vth (Vds=.05V) 50/50 .803 -.804 V Vbkd (Ij=1.0uA) 50/50 18.7 -17.3 V Kp 50/50 24.4 11.53 uA/V^2 (Uo*Cox/2) Gamma 50/50 .523 .509 V^0.5 (2.5v,5.0v) Delta Length .327 .301 um Delta Width .378 .267 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 19.9 -14.7 V Vth (Vbs=0,I=1uA) Metal1 21.1 -21.2 V Vth (Vbs=0,I=1uA) Metal2 21.5 -25.5 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P N METAL METAL PARAMETERS: POLY POLY DIFF DIFF WELL 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 23.4 24.0 27.3 99.3 2665.0 .124 .046 Ohm/sq Width Variation -.281 -.245 .671 .310 ---- .327 .622 um (Measured - Drawn) Contact Resist. 7.50 7.71 10.94 36.00 ---- ---- .164 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 388. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .038 .133 .261 .026 .019 fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .045 .024 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .049 fF/um^2 (Layer to Metal1) Fringe Cap ---- .538 .332 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.04 V Vinv, K = 1.5 2.25 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 4.99 V Vinv, K = 2.0 2.40 V Gain, K = 2.0 -11.04 Ring Oscillator Frequency 30.74 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N04C SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.250000U TOX=405.000000E-10 + NSUB=7.027401E+15 VTO=0.766845 KP=5.229000E-05 GAMMA=0.5665 + PHI=0.6 UO=613.27 UEXP=0.150156 UCRIT=52806.8 + DELTA=1.000000E-06 VMAX=66163.1 XJ=0.250000U LAMBDA=3.317271E-02 + NFS=4.055178E+12 NEFF=1 NSS=1.000000E+10 TPG=1.000000 + RSH=27.150000 CGDO=3.197355E-10 CGSO=3.197355E-10 CGBO=5.672811E-10 + CJ=1.014500E-04 MJ=0.678800 CJSW=2.227000E-10 MJSW=0.299700 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.38 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=405.000000E-10 + NSUB=6.607114E+15 VTO=-0.808517 KP=2.481000E-05 GAMMA=0.5493 + PHI=0.6 UO=291.01 UEXP=0.303657 UCRIT=23505.5 + DELTA=1.065086E-06 VMAX=38649.1 XJ=0.050000U LAMBDA=5.691426E-02 + NFS=1.000000E+11 NEFF=1.001 NSS=1.000000E+10 TPG=-1.000000 + RSH=101.500000 CGDO=3.197355E-10 CGSO=3.197355E-10 CGBO=5.958192E-10 + CJ=2.527000E-04 MJ=0.543500 CJSW=3.231000E-10 MJSW=0.322800 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.26 um N04C SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=vti *RUN=n04c *WAFER=3 *Gate-oxide thickness= 405.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=06-04-90 * *NMOS PARAMETERS * -7.13689E-01, 1.59624E-02, 9.99058E-02 7.28130E-01, 2.06975E-24,-2.00721E-23 9.76695E-01,-3.67595E-02,-8.39551E-02 1.06834E-01, 1.20295E-01,-5.22092E-02 -1.06130E-02, 2.39923E-02, 3.71228E-03 5.85153E+02,5.38178E-001,-4.73263E-001 5.03822E-02, 5.15514E-02,-8.64075E-02 6.22037E-02, 8.28548E-01,-1.18286E-01 6.33016E+00,-1.25213E+01, 1.16907E+01 -5.37759E-04,-1.02818E-02, 9.07295E-04 8.47251E-04,-3.59672E-04, 1.44493E-03 4.64664E-04,-3.22188E-03,-2.84692E-03 -2.13282E-02, 2.18211E-02, 6.18821E-02 6.59038E+02, 4.67247E+02, 3.53043E+02 -1.46751E+01, 1.85788E+01, 4.90615E+01 2.08727E+00, 9.36273E+01, 6.82209E+00 1.04234E-02, 8.54452E-02,-4.21337E-02 4.05000E-002, 2.70000E+01, 5.00000E+00 3.44149E-010,3.44149E-010,5.43784E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 405 Angstroms * * *PMOS PARAMETERS * -4.00658E-01,-2.87009E-02, 8.30610E-02 6.79812E-01, 2.38931E-24, 9.60020E-24 5.78560E-01, 2.93781E-02,-6.27855E-02 9.09648E-03, 7.44503E-02,-7.02804E-02 -8.85432E-03, 4.77522E-02,-7.92027E-03 2.43007E+02,3.28636E-001,-3.68710E-001 1.18412E-01, 4.72675E-02,-7.73915E-02 9.80745E-03, 3.09726E-01,-2.13758E-02 1.01067E+01,-5.61238E+00, 5.62072E+00 -5.72820E-04,-2.57148E-03,-4.07281E-03 1.24914E-03,-2.61389E-03,-6.70650E-03 5.84250E-03,-3.80265E-03,-2.80453E-04 -1.12236E-03, 5.44923E-03, 1.72468E-02 2.36698E+02, 1.47510E+02, 6.16180E+01 8.06140E+00, 1.72491E+00, 1.38490E+01 -1.29838E+00, 1.15331E+01, 8.24210E+00 -1.99555E-02,-3.12709E-03, 3.62568E-02 4.05000E-002, 2.70000E+01, 5.00000E+00 2.10153E-010,2.10153E-010,5.69199E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 27.15, 1.014500e-04, 2.227000e-10, 0, 0.8 0.8, 0.6788, 0.2997, 0, 0 * *P+ diffusion:: * 101.5, 2.527000e-04, 3.231000e-10, 0, 0.8 0.8, 0.5435, 0.3228, 0, 0 * *METAL LAYER -- 1 * 0.1233, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 4.640000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N05F.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N05F / FORREST VENDOR: VTI TECHNOLOGY: SCN FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical VLSI Technology 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .799 -.777 V Vth (Vds=.05V) 18/2 .732 -.758 V Idss (Vgds=5V) 18/2 2678.0 -1196.0 uA Vpt (Id=1.0uA) 18/2 N/A -16.22 V Vth (Vds=.05V) 50/50 .806 -.789 V Vbkd (Ij=1.0uA) 50/50 20.6 -17.4 V Kp 50/50 24.7 11.58 uA/V^2 (Uo*Cox/2) Gamma 50/50 .492 .496 V^0.5 (2.5v,5.0v) Delta Length .329 .284 um Delta Width .121 .042 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 22.6 -15.4 V Vth (Vbs=0,I=1uA) Metal1 22.5 -24.1 V Vth (Vbs=0,I=1uA) Metal2 22.6 -28.3 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P N METAL METAL PARAMETERS: POLY POLY DIFF DIFF WELL 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 23.0 23.4 28.2 106.2 2585.0 .124 .046 Ohm/sq Width Variation -.274 -.255 .532 .096 ---- .253 .470 um (Measured - Drawn) Contact Resist. 6.92 7.06 10.08 33.60 ---- ---- .170 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 393. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .037 .120 .254 .026 .018 fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .046 .024 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .049 fF/um^2 (Layer to Metal1) Fringe Cap ---- .505 .305 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.05 V Vinv, K = 1.5 2.26 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 4.99 V Vinv, K = 2.0 2.42 V Gain, K = 2.0 -10.82 Ring Oscillator Frequency 30.44 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N05F SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.211646U TOX=401.000000E-10 + NSUB=5.755401E+15 VTO=0.767845 KP=5.402000E-05 GAMMA=0.5076 + PHI=0.6 UO=627.27 UEXP=0.137532 UCRIT=26225.5 + DELTA=1.4853 VMAX=58628.5 XJ=0.250000U LAMBDA=3.215458E-02 + NFS=4.211106E+12 NEFF=1 NSS=1.000000E+10 TPG=1.000000 + RSH=28.410000 CGDO=2.733831E-10 CGSO=2.733831E-10 CGBO=6.176933E-10 + CJ=1.052000E-04 MJ=0.654300 CJSW=5.138000E-10 MJSW=0.278100 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.18 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=401.000000E-10 + NSUB=6.238514E+15 VTO=-0.790602 KP=2.563000E-05 GAMMA=0.5285 + PHI=0.6 UO=297.59 UEXP=0.275857 UCRIT=16298 + DELTA=0.236558 VMAX=34449.7 XJ=0.050000U LAMBDA=5.681071E-02 + NFS=2.262698E+11 NEFF=1.001 NSS=1.000000E+10 TPG=-1.000000 + RSH=106.700000 CGDO=3.229249E-10 CGSO=3.229249E-10 CGBO=6.349611E-10 + CJ=2.473000E-04 MJ=0.551400 CJSW=2.950000E-10 MJSW=0.320700 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.10 um N05F SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=vti *RUN=n05f *WAFER=2 *Gate-oxide thickness= 401.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=06-25-90 * *NMOS PARAMETERS * -8.18852E-01,-1.12936E-02, 1.64593E-02 7.48893E-01, 2.18969E-24,-9.20962E-24 1.05999E+00,-3.25201E-02, 3.15505E-01 1.31895E-01, 1.23669E-01,-7.77112E-02 -1.11330E-02, 2.07079E-02, 1.62834E-02 5.79917E+02,4.61255E-001,-2.34341E-001 5.18345E-02, 4.86614E-02,-3.18106E-02 8.38836E-02, 9.09195E-01,-7.02734E-01 7.03355E+00,-9.99904E+00, 4.01678E+01 -9.10928E-04,-1.34656E-02, 1.59919E-03 1.20121E-03, 2.29007E-05,-1.03441E-02 7.39930E-04,-2.27802E-03, 1.21257E-02 -1.60314E-02, 3.64624E-02, 5.38765E-02 6.81187E+02, 5.43175E+02,-2.06838E+02 -1.17069E+01, 3.90242E+01, 9.71068E+01 4.65909E+00, 9.03084E+01,-5.14357E+01 1.09630E-02, 8.78004E-02,-7.51021E-02 4.01000E-002, 2.70000E+01, 5.00000E+00 2.97901E-010,2.97901E-010,6.03293E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 401 Angstroms * * *PMOS PARAMETERS * -4.53762E-01, 4.29792E-02, 1.37996E-02 6.89448E-01,-2.22104E-24, 8.82974E-24 5.94010E-01,-8.07911E-02, 1.86772E-01 1.71946E-02, 3.01412E-02, 3.18445E-02 -9.53955E-03, 4.31287E-02, 2.79285E-03 2.36969E+02,4.41515E-001,-1.21008E-001 1.15882E-01, 5.45214E-02,-8.54966E-02 9.38166E-03, 2.79782E-01,-3.34235E-02 9.63520E+00,-5.54885E+00, 7.31712E+00 -5.85173E-04,-4.23907E-03, 1.66063E-03 1.46631E-03,-3.37133E-03,-2.88686E-03 5.45408E-03,-3.93116E-03, 2.27915E-03 -1.19050E-03, 9.37160E-03, 6.57327E-03 2.36848E+02, 1.19720E+02, 7.23709E+01 7.97466E+00, 1.96564E+00, 1.26888E+01 -1.14715E+00, 1.07375E+01, 4.71833E+00 -1.88511E-02,-6.66357E-04, 2.38826E-02 4.01000E-002, 2.70000E+01, 5.00000E+00 2.85152E-010,2.85152E-010,6.30935E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 28.41, 1.052000e-04, 5.138000e-10, 1.000000e-08, 0.8 0.8, 0.6543, 0.2781, 0, 0 * *P+ diffusion:: * 106.7, 2.473000e-04, 2.950000e-10, 0, 0.8 0.8, 0.5514, 0.3207, 0, 0 * *METAL LAYER -- 1 * 0.1206, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 4.700000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0