[SCNA20_ORBIT_PRM] The following are the parameters for the recent Orbit 2.0u CMOS N-well "low noise analog" (double metal, poly, PNPN, CCD) runs. [M96L_SCNA20.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: M96L / LOWELL VENDOR: ORBIT TECHNOLOGY: SCNA FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This is the parametric data from the SCNA split section of this run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .930 -.865 V Vth (Vds=.05V) 18/2 .852 -.847 V Idss (Vgds=5V) 18/2 2878.0 -1559.0 uA Vpt (Id=1.0uA) 18/2 13.93 -14.38 V Vth (Vds=.05V) 50/50 .872 -.849 V Vbkd (Ij=1.0uA) 50/50 15.7 -17.0 V Kp 50/50 25.3 9.79 uA/V^2 (Uo*Cox/2) Gamma 50/50 .175 .670 V^0.5 (2.5v,5.0v) Delta Length .560 .619 um Delta Width -.351 -.339 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 19.5 -24.0 V Vth (Vbs=0,I=1uA) Metal1 19.4 -23.8 V Vth (Vbs=0,I=1uA) Metal2 18.0 -12.8 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P N METAL METAL PARAMETERS: POLY POLY DIFF DIFF WELL 1 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 22.0 21.9 23.5 58.2 2632.0 .046 .026 Ohm/sq Width Variation -.331 -.331 1.205 .392 ---- -140 .527 um (Measured - Drawn) Contact Resist. 8.85 10.40 15.17 11.30 ---- ---- .028 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 402. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL PARAMETERS: POLY DIFF DIFF 1 2 UNITS ------------------------------------------------------------------------------ Area Cap .055 .096 .311 .026 .017 fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .038 .022 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .043 fF/um^2 (Layer to Metal1) Fringe Cap ---- .527 .376 ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.22 V Vinv, K = 1.5 2.42 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.00 V Vinv, K = 2.0 2.57 V Gain, K = 2.0 -8.55 Ring Oscillator Frequency 39.59 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency looks typical. M96L SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.250000U TOX=415.000000E-10 + NSUB=6.596000E+14 VTO=0.855004 KP=5.360000E-05 GAMMA=0.1778 + PHI=0.6 UO=644.14 UEXP=9.436265E-02 UCRIT=7477.06 + DELTA=1.46658 VMAX=71022.9 XJ=0.150000U LAMBDA=1.957573E-02 + NFS=1.581618E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=23.790000 CGDO=3.120311E-10 CGSO=3.120311E-10 CGBO=5.519913E-10 + CJ=7.930000E-05 MJ=0.708000 CJSW=5.190000E-10 MJSW=0.323700 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.43 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=415.000000E-10 + NSUB=9.803325E+15 VTO=-0.8112 KP=2.105000E-05 GAMMA=0.6856 + PHI=0.6 UO=253.6 UEXP=0.204535 UCRIT=32217 + DELTA=1.000000E-06 VMAX=100000 XJ=0.050000U LAMBDA=5.030391E-02 + NFS=3.208901E+12 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=60.420000 CGDO=3.120311E-10 CGSO=3.120311E-10 CGBO=5.011933E-10 + CJ=3.100000E-04 MJ=0.579400 CJSW=3.580000E-10 MJSW=0.333700 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.64 um M96L SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=orbit *RUN=m96l *WAFER=7 *Gate-oxide thickness= 415.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=09-24-89 * *NMOS PARAMETERS * -8.2650E-001,3.59693E-001,-2.6097E-001 7.47654E-001,0.00000E+000,0.00000E+000 1.35346E+000,-5.4031E-001,7.79812E-001 2.94210E-001,-8.8085E-002,3.55461E-002 -1.1007E-002,5.76706E-002,-4.7481E-003 6.03969E+002,6.85841E-001,-5.98690E-001 5.23349E-002,3.14083E-002,-6.8666E-002 3.68158E-001,5.30255E-001,-6.9873E-001 6.18580E+000,-3.5217E+000,1.07206E+002 -2.3002E-003,-5.8753E-003,-7.1101E-003 8.54491E-004,-2.3508E-003,-1.5502E-002 1.04072E-003,-3.1256E-004,3.94020E-002 -3.6182E-004,1.75079E-003,7.56599E-002 8.15936E+002,4.56424E+002,-7.7213E+002 -2.5577E+000,3.44554E+001,1.64346E+002 1.34052E+001,9.62555E+001,-1.4170E+002 1.38376E-002,1.04872E-001,-1.5130E-001 4.15000E-002,2.70000E+001,5.00000E+000 4.28007E-010,4.28007E-010,5.10502E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 414 Angstroms * * *PMOS PARAMETERS * -3.8153E-001,9.83059E-002,-2.8949E-002 6.80251E-001,0.00000E+000,0.00000E+000 6.53857E-001,-1.1526E-001,1.67902E-001 -1.4478E-003,4.36560E-002,2.22216E-002 -9.1694E-003,6.18397E-002,1.08473E-002 2.17676E+002,9.69167E-001,-4.27250E-001 1.12494E-001,4.40494E-002,-8.9096E-002 1.90144E-002,1.85513E-001,-6.7533E-002 1.02813E+001,-4.8468E+000,5.77958E+000 7.50320E-004,-5.4221E-003,-2.8159E-003 5.44941E-004,-2.9821E-003,-8.9050E-004 6.40607E-003,-3.5735E-003,4.01040E-003 -3.3006E-004,4.93411E-003,2.07059E-003 2.24154E+002,1.15469E+002,-1.8580E+001 8.56523E+000,1.46644E+000,9.60522E+000 -8.9277E-001,1.26805E+001,-2.4180E+000 -1.6252E-002,5.55236E-003,1.50874E-002 4.15000E-002,2.70000E+001,5.00000E+000 6.04820E-010,6.04820E-010,5.51835E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 23.79, 7.900000e-05, 5.190000e-10, 0, 0.8 0.8, 0.708, 0.324, 0, 0 * *P+ diffusion:: * 60.42, 3.100000e-04, 3.580000e-10, 0, 0.8 0.8, 0.5794, 0.3337, 0, 0 * *METAL LAYER -- 1 * 4.870000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.520000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N02S.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N02S / SIMON VENDOR: ORBIT TECHNOLOGY: SCNA FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This is the second Orbit 2.0 micron low noise analog (SCNA) run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .881 -.898 V Vth (Vds=.05V) 18/2 .793 -.870 V Idss (Vgds=5V) 18/2 2764.0 -1398.0 uA Vpt (Id=1.0uA) 18/2 15.28 -15.80 V Vth (Vds=.05V) 50/50 .822 -.863 V Vbkd (Ij=1.0uA) 50/50 16.1 -16.8 V Kp 50/50 24.9 11.06 uA/V^2 (Uo*Cox/2) Gamma 50/50 .164 .595 V^0.5 (2.5v,5.0v) Delta Length .405 .509 um Delta Width .073 .078 um (Effective=Drawn-Delta) COMMENTS: These parameters look normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 20.3 -13.2 V Vth (Vbs=0,I=1uA) Metal1 19.5 -23.1 V Vth (Vbs=0,I=1uA) Metal2 17.1 -23.7 V COMMENTS: These parameters look normal. IV. PROCESS N P N P METAL METAL POLY PARAMETERS: POLY POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 22.2 21.5 25.2 59.9 .050 .025 24.2 Ohm/sq Width Variation -.249 -.238 .554 .411 -.507 .052 -.233 um (Measured - Drawn) Contact Resist. 9.76 10.57 18.81 59.50 ---- .028 25.02 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- ---- 388. ---- ---- ---- Angst. COMMENTS: These parameters look normal. V. CAPACITANCE N P METAL METAL POLY PARAMETERS: POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Area Cap .055 .092 .313 .027 ,016 ---- fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .041 .021 .483 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .036 .041 fF/um^2 (Layer to Metal1) Fringe Cap ---- .491 .359 ---- ---- ---- fF/um (Layer to subs) COMMENTS: These parameters look normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.13 V Vinv, K = 1.5 2.33 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 4.99 V Vinv, K = 2.0 2.47 V Gain, K = 2.0 -10.27 Ring Oscillator Frequency 33.01 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N02S SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.250000U TOX=398.000000E-10 + NSUB=6.822000E+14 VTO=0.769196 KP=5.345000E-05 GAMMA=0.1734 + PHI=0.6 UO=616.139 UEXP=9.181057E-02 UCRIT=5571.12 + DELTA=2.82485 VMAX=54884.5 XJ=0.150000U LAMBDA=3.129420E-02 + NFS=1.626569E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=25.800000 CGDO=3.253590E-10 CGSO=3.253590E-10 CGBO=6.637285E-10 + CJ=7.635700E-05 MJ=0.702800 CJSW=4.836700E-10 MJSW=0.323300 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.01 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=398.000000E-10 + NSUB=9.280432E+15 VTO=-0.852844 KP=2.074000E-05 GAMMA=0.6397 + PHI=0.6 UO=239.5 UEXP=0.274169 UCRIT=42938.1 + DELTA=1.000000E-06 VMAX=100000 XJ=0.050000U LAMBDA=4.783004E-02 + NFS=2.122830E+12 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=63.000000 CGDO=3.253590E-10 CGSO=3.253590E-10 CGBO=7.036079E-10 + CJ=3.057900E-04 MJ=0.567800 CJSW=3.588200E-10 MJSW=0.339200 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.17 um N02S SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=orbit *RUN=n02s *WAFER=38 *Gate-oxide thickness= 398.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=14-04-90 * *NMOS PARAMETERS * -8.89014E-01, 4.38486E-01,-3.56536E-01 7.54237E-01,-2.36852E-24, 1.87315E-23 1.28618E+00,-6.79966E-01, 9.89810E-01 2.85687E-01,-1.36727E-01, 8.98685E-02 -1.07264E-02, 4.54685E-02, 9.39589E-03 6.14385E+02,3.43085E-001,-2.95839E-001 5.29481E-02, 3.86784E-02,-5.45854E-02 3.59248E-01, 5.77156E-01,-5.61254E-01 7.52609E+00,-4.79478E+00, 7.93030E+01 -1.90805E-03,-7.58913E-03,-2.71566E-03 6.81712E-04,-1.67957E-03,-1.02093E-02 1.54350E-03,-8.78271E-04, 2.95754E-02 1.33831E-02,-2.94996E-02, 6.45618E-02 8.12347E+02, 5.15321E+02,-4.56176E+02 3.15623E+00, 2.50869E+01, 1.37719E+02 5.63259E+00, 1.14268E+02,-8.12920E+01 -2.56220E-02, 1.87622E-01,-1.10500E-01 3.98000E-002, 2.70000E+01, 5.00000E+00 2.23252E-010,2.23252E-010,5.89339E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 397 Angstroms * * *PMOS PARAMETERS * -1.96808E-01,-5.11421E-02, 4.45054E-01 6.50651E-01, 0.00000E+00, 0.00000E+00 5.04091E-01, 7.98097E-02,-3.58367E-01 -2.72532E-02, 8.42137E-02,-1.60952E-01 -3.41518E-03, 3.69672E-02, 1.44552E-02 2.27864E+02,7.19885E-001,9.22591E-003 1.18481E-01, 3.89458E-02,-5.50868E-02 5.32082E-03, 2.32613E-01,-9.56487E-02 1.07943E+01,-5.63424E+00, 3.58591E+00 1.42588E-03,-6.27374E-03,-4.07997E-03 2.24484E-04,-2.11839E-03,-5.83748E-03 6.76966E-03,-3.58886E-03,-1.37514E-03 -1.95424E-03, 7.51303E-03, 1.07839E-02 2.21473E+02, 1.20646E+02,-1.22811E+01 7.91877E+00, 3.16948E+00, 5.74794E+00 -1.41135E+00, 1.19109E+01,-9.72204E-01 -1.93522E-02, 5.54940E-03, 1.50604E-02 3.98000E-002, 2.70000E+01, 5.00000E+00 4.68442E-010,4.68442E-010,6.63930E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 25.8, 7.635700e-05, 4.836700e-10, 0, 0.8 0.8, 0.7028, 0.3233, 0, 0 * *P+ diffusion:: * 63, 3.057900e-04, 3.588200e-10, 0, 0.8 0.8, 0.5678, 0.3392, 0, 0 * *METAL LAYER -- 1 * 5.100000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.600000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N04Z.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N04Z / ZEUS VENDOR: ORBIT TECHNOLOGY: SCNA FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Orbit Semiconductor 2um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .899 -.881 V Vth (Vds=.05V) 18/2 .812 -.867 V Idss (Vgds=5V) 18/2 2892.0 -1526.0 uA Vpt (Id=1.0uA) 18/2 14.14 -15.36 V Vth (Vds=.05V) 50/50 .843 -.854 V Vbkd (Ij=1.0uA) 50/50 16.0 -16.8 V Kp 50/50 24.4 10.93 uA/V^2 (Uo*Cox/2) Gamma 50/50 .181 .649 V^0.5 (2.5v,5.0v) Delta Length .466 .646 um Delta Width .232 .070 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 17.3 -13.6 V Vth (Vbs=0,I=1uA) Metal1 19.8 -23.0 V Vth (Vbs=0,I=1uA) Metal2 20.0 -23.1 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P METAL METAL POLY PARAMETERS: POLY POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 23.3 22.5 25.1 59.9 .050 .027 21.4 Ohm/sq Width Variation -.284 -.270 .326 .248 -.492 -.515 -.444 um (Measured - Drawn) Contact Resist. 9.45 10.53 16.78 27.04 ---- .029 10.72 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 383. 387. ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL POLY PARAMETERS: POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Area Cap .054 .081 .316 .030 .017 ---- fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .046 .022 .524 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .034 .047 fF/um^2 (Layer to Metal1) Fringe Cap ---- .466 .357 ---- ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.17 V Vinv, K = 1.5 2.37 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 4.99 V Vinv, K = 2.0 2.52 V Gain, K = 2.0 -9.54 Ring Oscillator Frequency 35.71 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N04Z SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.250000U TOX=398.000000E-10 + NSUB=8.638220E+14 VTO=0.811142 KP=5.345000E-05 GAMMA=0.1902 + PHI=0.6 UO=616.14 UEXP=9.836754E-02 UCRIT=11302.8 + DELTA=2.38549 VMAX=62132.8 XJ=0.150000U LAMBDA=2.514999E-02 + NFS=1.652464E+12 NEFF=1 NSS=1.000000E+10 TPG=1.000000 + RSH=24.940000 CGDO=3.253590E-10 CGSO=3.253590E-10 CGBO=6.155848E-10 + CJ=6.612000E-05 MJ=0.644900 CJSW=4.428000E-10 MJSW=0.290700 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.19 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=398.000000E-10 + NSUB=1.019995E+16 VTO=-0.848698 KP=2.256000E-05 GAMMA=0.6707 + PHI=0.6 UO=260.481 UEXP=0.287329 UCRIT=45133.2 + DELTA=1.000000E-06 VMAX=100000 XJ=0.050000U LAMBDA=4.671012E-02 + NFS=2.088785E+12 NEFF=1.001 NSS=1.000000E+10 TPG=-1.000000 + RSH=59.470000 CGDO=3.253590E-10 CGSO=3.253590E-10 CGBO=6.872992E-10 + CJ=3.194000E-04 MJ=0.570600 CJSW=3.125000E-10 MJSW=0.318900 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.10 um N04Z SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=orbit *RUN=n04z *WAFER=1 *Gate-oxide thickness= 398.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=05-30-90 * *NMOS PARAMETERS * -8.22996E-01, 3.73863E-01,-6.06847E-01 7.59728E-01, 1.04038E-24, 0.00000E+00 1.26054E+00,-5.86273E-01, 1.25206E+00 2.69573E-01,-1.01129E-01, 1.63057E-01 -1.11051E-02, 5.08532E-02,-7.34237E-03 6.03820E+02,5.31879E-001,-3.72114E-001 5.46291E-02, 3.39036E-02,-5.18927E-02 3.67419E-01, 4.92977E-01,-3.13017E-01 6.14896E+00,-3.93958E+00, 8.50298E+01 -2.31025E-03,-6.43055E-03,-6.49051E-03 8.90513E-04,-1.34496E-03,-1.48547E-02 7.58579E-04,-4.65871E-04, 3.39005E-02 1.95407E-02,-3.31673E-02, 8.59744E-02 7.94102E+02, 4.81612E+02,-3.46360E+02 -2.69380E+00, 3.14530E+01, 1.62714E+02 7.65666E+00, 1.03058E+02,-5.76146E+01 1.80673E-03, 1.22674E-01,-7.23169E-02 3.98000E-002, 2.70000E+01, 5.00000E+00 3.46103E-010,3.46103E-010,5.70690E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 397 Angstroms * * *PMOS PARAMETERS * -3.21562E-01, 5.45958E-02, 8.20929E-03 6.88630E-01,-1.85312E-25, 2.10010E-24 5.41050E-01, 2.11110E-02, 1.74096E-01 -4.23283E-02, 8.78560E-02, 1.79765E-02 -1.23115E-02, 5.35991E-02, 4.94755E-03 2.23147E+02,9.32184E-001,6.06734E-002 1.12133E-01, 6.43346E-02,-8.50080E-02 7.58146E-03, 1.49718E-01, 3.27884E-02 1.02002E+01,-4.91454E+00, 6.36147E+00 -1.71273E-03,-2.30796E-03,-2.26277E-03 8.73688E-05,-2.23275E-03,-3.45554E-03 5.61395E-03,-1.84495E-03, 2.70270E-03 -1.64176E-03, 4.00669E-03, 8.76113E-03 2.12891E+02, 8.98999E+01, 1.12589E+02 7.17503E+00, 1.64553E+00, 1.54371E+01 -1.68947E+00, 9.56292E+00, 7.91492E+00 -1.88026E-02, 6.30115E-03, 1.41659E-02 3.98000E-002, 2.70000E+01, 5.00000E+00 6.06589E-010,6.06589E-010,6.76510E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 24.94, 6.612000e-05, 4.428000e-10, 0, 0.8 0.8, 0.6449, 0.2907, 0, 0 * *P+ diffusion:: * 59.47, 3.194000e-04, 3.125000e-10, 0, 0.8 0.8, 0.5706, 0.3189, 0, 0 * *METAL LAYER -- 1 * 5.050000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.660000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0