[SCPE20_ORBIT_PRM] The following are the parameters for the recent Orbit 2.0u CMOS P-well double metal, poly runs. [M9AF.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: M9AF / FRANCINE VENDOR: ORBIT TECHNOLOGY: SCPE FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Orbit Semiconductor 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 1.060 -.794 V Vth (Vds=.05V) 18/2 .981 -.773 V Idss (Vgds=5V) 18/2 2348.0 -1182.0 uA Vpt (Id=1.0uA) 18/2 16.70 -15.22 V Vth (Vds=.05V) 50/50 .985 -.791 V Vbkd (Ij=1.0uA) 50/50 16.3 -16.1 V Kp 50/50 23.8 9.66 uA/V^2 (Uo*Cox/2) Gamma 50/50 1.088 .492 V^0.5 (2.5v,5.0v) Delta Length .476 .182 um Delta Width .016 .090 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 17.4 -27.0 V Vth (Vbs=0,I=1uA) Metal1 17.6 -25.1 V Vth (Vbs=0,I=1uA) Metal2 17.6 -12.7 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P METAL METAL POLY PARAMETERS: POLY POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 19.2 20.6 25.9 73.8 .052 .027 20.8 Ohm/sq Width Variation -.211 -.155 .035 .015 -.265 .305 .085 um (Measured - Drawn) Contact Resist. 8.77 10.20 19.05 32.38 ---- .030 10.52 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 399. ---- ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL POLY PARAMETERS: POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Area Cap .067 .398 .215 .030 .019 ---- fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .043 .022 .577 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .038 .043 fF/um^2 (Layer to Metal1) Fringe Cap ---- .466 .217 ---- ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.30 V Vinv, K = 1.5 2.51 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.01 V Vinv, K = 2.0 2.57 V Gain, K = 2.0 -9.72 Ring Oscillator Frequency 30.14 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. M9AF SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.236421U TOX=414.000000E-10 + NSUB=2.243000E+16 VTO=1.05931 KP=5.095000E-05 GAMMA=1.0345 + PHI=0.6 UO=610.8 UEXP=0.235296 UCRIT=95768.3 + DELTA=1.37638 VMAX=68869.9 XJ=0.250000U LAMBDA=3.122555E-02 + NFS=2.350046E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=26.040000 CGDO=2.957956E-10 CGSO=2.957956E-10 CGBO=6.768067E-10 + CJ=3.966000E-04 MJ=0.463300 CJSW=4.544600E-10 MJSW=0.352800 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.09 um .MODEL CMOSP PMOS LEVEL=2 LD=0.184257U TOX=414.000000E-10 + NSUB=4.939100E+15 VTO=-0.7032 KP=2.145000E-05 GAMMA=0.4855 + PHI=0.6 UO=257.2 UEXP=0.205504 UCRIT=12209.4 + DELTA=1.51184 VMAX=40909.7 XJ=0.250000U LAMBDA=5.672513E-02 + NFS=2.250868E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=75.080000 CGDO=2.305311E-10 CGSO=2.305311E-10 CGBO=6.728255E-10 + CJ=2.056000E-04 MJ=0.453700 CJSW=1.867500E-10 MJSW=0.171100 PB=0.700000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.07 um M9AF SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=orbit *RUN=m9af *WAFER=5 *Gate-oxide thickness= 414.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=12-07-89 * *NMOS PARAMETERS * -6.2277E-001,-1.5619E-001,7.71284E-002 7.54238E-001,0.00000E+000,0.00000E+000 9.46822E-001,2.55002E-001,1.89969E-001 -4.8373E-002,1.35947E-001,-4.9936E-002 -3.5786E-003,1.10134E-002,-3.6948E-004 5.47688E+002,7.30400E-001,3.60730E-002 5.35837E-002,3.99454E-002,-4.3066E-002 1.13784E-002,5.63985E-001,-1.2316E-001 1.41362E+001,-2.9049E+001,3.84130E+001 -5.6201E-004,-3.7162E-003,-4.8874E-003 5.62869E-005,-8.8337E-004,-3.2965E-003 2.56878E-003,-1.2970E-002,1.78794E-002 -1.4921E-004,-2.1351E-003,2.96152E-002 5.24531E+002,3.31525E+002,1.24202E+002 5.54730E+000,-3.0891E+001,8.30164E+001 -3.6313E+000,6.39713E+001,-9.9944E+000 1.62460E-003,6.51435E-002,-1.9596E-002 4.14000E-002,2.70000E+001,5.00000E+000 4.56916E-010,4.56916E-010,6.63939E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 414 Angstroms * * *PMOS PARAMETERS * -4.1688E-001,1.71755E-002,1.37309E-001 6.66343E-001,0.00000E+000,0.00000E+000 5.32698E-001,-1.5941E-002,-2.6403E-002 9.97852E-003,4.98025E-002,-5.0230E-002 -1.1685E-002,5.92941E-002,-1.0481E-003 2.20910E+002,4.85707E-001,8.61928E-002 1.19313E-001,5.02235E-002,-1.1305E-001 1.88159E-002,2.85393E-001,-1.7808E-002 9.02967E+000,-3.3503E+000,5.00281E+000 -1.7004E-003,-1.8780E-003,3.68254E-004 8.76498E-004,-3.3934E-003,1.48052E-003 5.50991E-003,-1.2358E-003,1.98478E-003 1.09070E-004,6.20416E-003,-1.3810E-003 2.39908E+002,1.34566E+002,2.61239E+000 8.33840E+000,3.74013E+000,6.37618E+000 -9.4536E-001,1.54218E+001,-3.4567E+000 -1.9946E-002,4.17665E-003,7.45077E-003 4.14000E-002,2.70000E+001,5.00000E+000 3.03844E-010,3.03844E-010,6.76033E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 26.04, 3.966000e-04, 4.544600e-10, 0, 0.8 0.8, 0.4633, 0.3528, 0, 0 * *P+ diffusion:: * 75.08, 2.056000e-04, 1.867500e-10, 0, 0.7 0.7, 0.4537, 0.1711, 0, 0 * *METAL LAYER -- 1 * 5.267000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.643000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [M9BI.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: M9BI / IPHEGENIA VENDOR: ORBIT TECHNOLOGY: SCPE FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Orbit Semiconductor 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .957 -.773 V Vth (Vds=.05V) 18/2 .884 -.745 V Idss (Vgds=5V) 18/2 2898.0 -1413.0 uA Vpt (Id=1.0uA) 18/2 16.23 -14.62 V Vth (Vds=.05V) 50/50 .900 -.769 V Vbkd (Ij=1.0uA) 50/50 16.3 -15.7 V Kp 50/50 26.8 10.78 uA/V^2 (Uo*Cox/2) Gamma 50/50 .962 .438 V^0.5 (2.5v,5.0v) Delta Length .648 .338 um Delta Width .111 .081 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 17.4 -26.2 V Vth (Vbs=0,I=1uA) Metal1 17.6 -20.7 V Vth (Vbs=0,I=1uA) Metal2 17.6 -12.4 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P METAL METAL POLY PARAMETERS: POLY POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 19.2 19.6 22.5 76.4 .050 .026 20.9 Ohm/sq Width Variation -.353 -.341 .371 .295 -.420 .255 -.147 um (Measured - Drawn) Contact Resist. 8.60 9.18 20.39 38.11 ---- .033 11.41 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 358. ---- ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL POLY PARAMETERS: POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Area Cap .067 .392 .214 .031 .021 ---- fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .043 .022 .478 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .037 .044 fF/um^2 (Layer to Metal1) Fringe Cap ---- .505 .241 ---- ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.17 V Vinv, K = 1.5 2.38 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.01 V Vinv, K = 2.0 2.55 V Gain, K = 2.0 -8.90 Ring Oscillator Frequency 35.27 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. M9BI SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.250000U TOX=365.000000E-10 + NSUB=2.138180E+16 VTO=0.84898 KP=5.779000E-05 GAMMA=0.8905 + PHI=0.6 UO=610.8 UEXP=0.244555 UCRIT=128615 + DELTA=2.0298 VMAX=92227.9 XJ=0.250000U LAMBDA=1.946049E-02 + NFS=2.307838E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=22.730000 CGDO=3.547750E-10 CGSO=3.547750E-10 CGBO=6.354506E-10 + CJ=3.774000E-04 MJ=0.458900 CJSW=5.136000E-10 MJSW=0.366200 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.16 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=365.000000E-10 + NSUB=6.193910E+15 VTO=-0.826989 KP=2.287000E-05 GAMMA=0.4793 + PHI=0.6 UO=241.796 UEXP=0.214214 UCRIT=19100.4 + DELTA=0.859687 VMAX=47972.9 XJ=0.250000U LAMBDA=5.403347E-02 + NFS=2.351269E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=76.020000 CGDO=3.547750E-10 CGSO=3.547750E-10 CGBO=6.981174E-10 + CJ=2.252400E-04 MJ=0.466500 CJSW=2.382500E-10 MJSW=0.246600 PB=0.700000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.09 um M9BI SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=orbit *RUN=m9bi *WAFER=6 *Gate-oxide thickness= 365.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=01-02-90 * *NMOS PARAMETERS * -7.5862E-001,7.47832E-003,5.59469E-002 7.54280E-001,0.00000E+000,0.00000E+000 9.71787E-001,-9.1788E-003,4.38340E-001 4.59847E-003,5.54008E-002,5.39704E-002 -4.7274E-003,7.13508E-003,2.72622E-002 5.59946E+002,8.04021E-001,-4.34930E-001 5.19694E-002,4.43539E-002,-3.7299E-002 2.71167E-002,5.72503E-001,-2.5883E-001 1.27018E+001,-2.5151E+001,4.83936E+001 -9.6755E-005,-5.6883E-003,-2.6703E-003 4.34900E-004,-3.3786E-004,-8.9968E-003 2.10646E-003,-1.1152E-002,2.43187E-002 -3.7373E-003,7.09708E-003,1.83895E-002 5.65144E+002,3.32044E+002,5.49476E+001 4.83491E+000,-2.1422E+001,9.33910E+001 -1.3896E+000,5.71000E+001,-3.0342E+000 4.93859E-003,5.53525E-002,-2.3547E-002 3.65000E-002,2.70000E+001,5.00000E+000 5.70493E-010,5.70493E-010,5.66386E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 364 Angstroms * * *PMOS PARAMETERS * -3.1320E-001,1.13753E-001,1.24160E-001 6.66766E-001,0.00000E+000,0.00000E+000 5.61236E-001,-1.7038E-001,5.34328E-002 2.25010E-002,3.86912E-003,-2.4446E-002 -1.2020E-002,5.45080E-002,3.92124E-003 2.15601E+002,5.65022E-001,-4.86880E-001 1.28427E-001,5.47711E-002,-1.0120E-001 1.04033E-002,2.42118E-001,3.87988E-002 8.90424E+000,-3.6965E+000,4.64913E+000 -1.4031E-003,-1.0253E-003,-2.5618E-003 7.88399E-004,-2.1388E-003,-4.4916E-003 6.24794E-003,-2.3069E-003,6.88985E-004 -1.0724E-003,5.12090E-003,1.32191E-002 2.36386E+002,1.11994E+002,4.50760E+001 8.31455E+000,1.63411E+000,1.22381E+001 -1.0472E+000,1.26847E+001,8.07639E+000 -1.7457E-002,2.65785E-003,2.33159E-002 3.65000E-002,2.70000E+001,5.00000E+000 4.00911E-010,4.00911E-010,5.53317E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 22.73, 3.774000e-04, 5.136000e-10, 0, 0.8 0.8, 0.4589, 0.3662, 0, 0 * *P+ diffusion:: * 86.92, 2.252400e-04, 2.382500e-10, 0, 0.7 0.7, 0.4665, 0.2466, 0, 0 * *METAL LAYER -- 1 * 5.000000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.700000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [M9CK.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: M9CK / KAREEM VENDOR: ORBIT TECHNOLOGY: SCPE FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Orbit Semiconductor 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 1.072 -.784 V Vth (Vds=.05V) 18/2 1.000 -.754 V Idss (Vgds=5V) 18/2 2314.0 -1192.0 uA Vpt (Id=1.0uA) 18/2 16.58 -15.43 V Vth (Vds=.05V) 50/50 1.012 -.775 V Vbkd (Ij=1.0uA) 50/50 16.7 -16.4 V Kp 50/50 23.4 9.52 uA/V^2 (Uo*Cox/2) Gamma 50/50 1.095 .487 V^0.5 (2.5v,5.0v) Delta Length .551 .167 um Delta Width .040 .097 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Metal2 17.4 -27.4 V Vth (Vbs=0,I=1uA) Metal1 17.6 -21.6 V Vth (Vbs=0,I=1uA) Poly 17.7 -12.4 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P METAL METAL POLY PARAMETERS: POLY POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 21.0 21.9 22.5 74.2 .052 .026 19.7 Ohm/sq Width Variation -.186 -.152 .213 .131 -.134 .448 .092 um (Measured - Drawn) Contact Resist. 8.13 9.02 14.81 36.25 ---- .033 7.99 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 410. ---- ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL POLY PARAMETERS: POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Area Cap .069 .392 .216 .031 .031 ---- fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .044 .021 .534 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .036 .044 fF/um^2 (Layer to Metal1) Fringe Cap ---- .495 .233 ---- ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.25 V Vinv, K = 1.5 2.44 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.01 V Vinv, K = 2.0 2.59 V Gain, K = 2.0 -7.38 Ring Oscillator Frequency 29.66 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. M9CK SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.249955U TOX=414.000000E-10 + NSUB=1.882260E+16 VTO=1.06697 KP=5.053000E-05 GAMMA=0.9477 + PHI=0.6 UO=605.8 UEXP=0.223934 UCRIT=99869.2 + DELTA=0.336748 VMAX=76946.4 XJ=0.250000U LAMBDA=2.129216E-02 + NFS=2.094489E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=22.500000 CGDO=3.127285E-10 CGSO=3.127285E-10 CGBO=6.736458E-10 + CJ=3.845300E-04 MJ=0.458800 CJSW=4.869000E-10 MJSW=0.351000 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.08 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=414.000000E-10 + NSUB=4.400939E+15 VTO=-0.763103 KP=1.959000E-05 GAMMA=0.4582 + PHI=0.6 UO=234.92 UEXP=0.171969 UCRIT=9025.3 + DELTA=1.48722 VMAX=44396.2 XJ=0.250000U LAMBDA=5.272630E-02 + NFS=2.295529E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=73.700000 CGDO=3.127848E-10 CGSO=3.127848E-10 CGBO=6.597235E-10 + CJ=2.086200E-04 MJ=0.456200 CJSW=2.276100E-10 MJSW=0.215300 PB=0.700000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.02 um M9CK SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=orbit *RUN=m9ck *WAFER=5 *Gate-oxide thickness= 414.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=29-01-90 * *NMOS PARAMETERS * -6.8458E-001,-5.4808E-002,3.44038E-002 7.55960E-001,0.00000E+000,0.00000E+000 1.05532E+000,1.06430E-001,3.65096E-001 -2.2282E-002,9.47341E-002,1.83424E-002 -3.6274E-003,9.74317E-003,1.05075E-002 5.60004E+002,7.55869E-001,-1.96520E-001 5.02632E-002,4.03377E-002,-3.5494E-002 1.79852E-002,6.31585E-001,-2.9743E-001 1.38337E+001,-3.0192E+001,4.00182E+001 -1.5302E-004,-5.0823E-003,-7.9081E-003 3.12063E-004,-1.0569E-003,-5.4361E-003 2.47553E-003,-1.3587E-002,1.88402E-002 -1.8572E-003,1.32404E-003,4.35920E-002 5.49185E+002,3.80744E+002,-5.7983E+001 4.68816E+000,-3.1358E+001,1.04261E+002 -1.4266E+000,6.84544E+001,-3.6905E+001 5.28797E-003,6.97774E-002,-4.7082E-002 4.14000E-002,2.70000E+001,5.00000E+000 4.72849E-010,4.72849E-010,6.07817E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 414 Angstroms * * *PMOS PARAMETERS * -4.0165E-001,-3.5948E-002,1.46968E-001 6.79140E-001,0.00000E+000,0.00000E+000 5.87851E-001,-6.5649E-002,1.29797E-001 2.03705E-002,2.72628E-002,2.25646E-002 -9.9894E-003,5.15269E-002,2.14496E-002 2.21195E+002,5.11202E-001,-1.45340E-001 1.21282E-001,3.22123E-002,-7.7972E-002 1.96260E-002,3.01001E-001,-4.5722E-002 9.06378E+000,-3.5212E+000,4.22076E+000 -9.2536E-004,-4.0847E-003,1.98459E-003 7.08585E-004,-1.8540E-003,-3.2910E-003 5.44422E-003,-1.7718E-003,-1.6962E-004 -6.4477E-004,4.52967E-003,1.22192E-002 2.43732E+002,1.31127E+002,2.00297E+001 8.37349E+000,2.15832E+000,1.22685E+001 -9.0097E-001,1.52427E+001,1.66567E+000 -1.6969E-002,1.43195E-003,2.16847E-002 4.14000E-002,2.70000E+001,5.00000E+000 3.19792E-010,3.19792E-010,6.20167E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 22.5, 3.845300e-04, 4.869000e-10, 0, 0.8 0.8, 0.4588, 0.351, 0, 0 * *P+ diffusion:: * 73.7, 2.086200e-04, 2.276100e-10, 0, 0.7 0.7, 0.4562, 0.2153, 0, 0 * *METAL LAYER -- 1 * 5.400000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.600000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N01M.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N01M / MEI-LING VENDOR: ORBIT TECHNOLOGY: SCPE FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Orbit Semiconductor 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 1.109 -.812 V Vth (Vds=.05V) 18/2 1.020 -.782 V Idss (Vgds=5V) 18/2 2195.0 -1144.0 uA Vpt (Id=1.0uA) 18/2 16.03 -15.47 V Vth (Vds=.05V) 50/50 1.017 -.799 V Vbkd (Ij=1.0uA) 50/50 16.1 -16.4 V Kp 50/50 24.3 10.05 uA/V^2 (Uo*Cox/2) Gamma 50/50 1.112 .470 V^0.5 (2.5v,5.0v) Delta Length .433 .154 um Delta Width .141 .226 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 17.1 -11.7 V Vth (Vbs=0,I=1uA) Metal1 17.2 -21.4 V Vth (Vbs=0,I=1uA) Metal2 17.3 -27.1 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P METAL METAL POLY PARAMETERS: POLY POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 19.9 20.3 22.7 72.4 .051 .027 19.5 Ohm/sq Width Variation -.137 -.124 .159 .194 -.310 .096 .047 um (Measured - Drawn) Contact Resist. 7.94 8.37 15.17 31.6 ---- .030 8.18 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 410. ---- ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL POLY PARAMETERS: POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Area Cap .072 .399 .216 .033 .037 ---- fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .043 .022 .480 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .036 .044 fF/um^2 (Layer to Metal1) Fringe Cap ---- .494 .230 ---- ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.27 V Vinv, K = 1.5 2.47 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.00 V Vinv, K = 2.0 2.61 V Gain, K = 2.0 -13.70 Ring Oscillator Frequency 26.34 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N01M SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.238981U TOX=418.000000E-10 + NSUB=2.244788E+16 VTO=1.05345 KP=5.262000E-05 GAMMA=1.0449 + PHI=0.6 UO=637.7 UEXP=0.224043 UCRIT=90946.4 + DELTA=1.51133 VMAX=72808 XJ=0.250000U LAMBDA=2.507519E-02 + NFS=2.080485E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=22.600000 CGDO=2.961372E-10 CGSO=2.961372E-10 CGBO=6.991190E-10 + CJ=3.957000E-04 MJ=0.465200 CJSW=4.793000E-10 MJSW=0.353500 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.19 um .MODEL CMOSP PMOS LEVEL=2 LD=0.228588U TOX=418.000000E-10 + NSUB=4.746009E+15 VTO=-0.77181 KP=1.907000E-05 GAMMA=0.4805 + PHI=0.6 UO=230.985 UEXP=0.131553 UCRIT=5018.69 + DELTA=1.46584 VMAX=38861.8 XJ=0.250000U LAMBDA=5.051835E-02 + NFS=1.000000E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=70.500000 CGDO=2.832586E-10 CGSO=2.832586E-10 CGBO=7.181187E-10 + CJ=1.958000E-04 MJ=0.404800 CJSW=2.853000E-10 MJSW=0.388700 PB=0.700000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.27 um N01M SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=orbit *RUN=n01m *WAFER=3 *Gate-oxide thickness= 418.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=03-05-90 * *NMOS PARAMETERS * -6.7687E-001,-1.3790E-001,2.01410E-001 7.55282E-001,0.00000E+000,0.00000E+000 1.01255E+000,2.42403E-001,1.62535E-001 -3.1868E-002,1.33021E-001,-4.3520E-002 -4.0923E-003,1.16382E-002,9.65405E-003 5.73987E+002,7.33415E-001,1.53265E-001 5.29926E-002,4.30651E-002,-3.8481E-002 1.41373E-002,5.84992E-001,-2.5389E-001 1.48703E+001,-3.0711E+001,5.03302E+001 -7.3966E-004,-5.3776E-003,1.28763E-003 4.22477E-004,-1.0669E-003,-6.3353E-003 2.48414E-003,-1.3346E-002,2.75597E-002 5.88374E-004,3.77060E-003,-5.9939E-003 5.44664E+002,3.61252E+002,3.52674E+001 6.67984E+000,-2.6052E+001,7.30085E+001 -4.9777E+000,6.58060E+001,-2.2112E+000 -4.9106E-003,6.95875E-002,-1.2338E-002 4.18000E-002,2.70000E+001,5.00000E+000 4.54412E-010,4.54412E-010,6.90525E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 417 Angstroms * * *PMOS PARAMETERS * -3.0843E-001,-5.6426E-003,-3.0438E-002 6.68940E-001,0.00000E+000,0.00000E+000 5.20495E-001,-3.1712E-002,1.66891E-001 8.26132E-003,2.98829E-002,1.02502E-002 -7.1723E-003,4.92378E-002,8.69217E-003 2.35621E+002,4.18094E-001,7.27676E-002 1.10898E-001,5.53202E-002,-9.2488E-002 1.61344E-001,5.79826E-002,2.14531E-002 1.00027E+001,-5.3430E+000,7.28990E+000 9.78576E-004,-7.0696E-003,-6.9454E-004 8.69141E-004,-2.5032E-003,-5.1664E-003 6.34749E-003,-5.2325E-003,6.93993E-003 2.86193E-003,3.66657E-003,3.64253E-003 2.32612E+002,1.84845E+002,-2.7113E+001 8.58219E+000,3.62413E+000,1.11044E+001 -1.6707E+000,1.64699E+001,1.90176E+000 -1.0488E-001,1.63721E-001,-3.4231E-002 4.18000E-002,2.70000E+001,5.00000E+000 2.59044E-010,2.59044E-010,6.71165E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 22.6, 3.957000e-04, 4.793000e-10, 1.000000e-08, 0.8 0.8, 0.4652, 0.3535, 0, 0 * *P+ diffusion:: * 70.5, 1.958000e-04, 2.853000e-10, 0, 0.7 0.7, 0.4048, 0.3887, 0, 0 * *METAL LAYER -- 1 * 5.000000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.600000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N02R.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N02R / RODNEY VENDOR: ORBIT TECHNOLOGY: SCPE FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Orbit Semiconductor 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 1.021 -.786 V Vth (Vds=.05V) 18/2 .952 -.764 V Idss (Vgds=5V) 18/2 2110. 1016. uA Vpt (Id=1.0uA) 18/2 16.2 -15.1 V Vth (Vds=.05V) 50/50 .950 -.780 V Vbkd (Ij=1.0uA) 50/50 16.2 -16.0 V Kp 50/50 24.8 10.23 uA/V^2 (Uo*Cox/2) Gamma 50/50 1.094 .460 V^0.5 (2.5v,5.0v) Delta Length .486 .268 um Delta Width .061 .053 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 17.3 -12.9 V Vth (Vbs=0,I=1uA) Metal1 17.5 -22.5 V Vth (Vbs=0,I=1uA) Metal2 17.6 -27.8 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P METAL METAL POLY PARAMETERS: POLY POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 19.0 19.1 23.8 80.2 .051 .025 18.8 Ohm/sq Width Variation -.168 -.198 .028 .024 -.329 .302 .025 um (Measured - Drawn) Contact Resist. 8.56 9.20 18.3 106.0 ---- .030 9.43 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 397. ---- ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL POLY PARAMETERS: POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Area Cap .061 .434 .231 .031 .019 ---- fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .043 .021 .460 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .035 .043 fF/um^2 (Layer to Metal1) Fringe Cap ---- .387 .198 ---- ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.23 V Vinv, K = 1.5 2.43 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 5.00 V Vinv, K = 2.0 2.57 V Gain, K = 2.0 -12.84 Ring Oscillator Frequency 28.66 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N02R SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.152059U TOX=411.000000E-10 + NSUB=2.288963E+16 VTO=0.947274 KP=4.915000E-05 GAMMA=1.0375 + PHI=0.6 UO=585.674 UEXP=0.192202 UCRIT=118569 + DELTA=1.93722 VMAX=76605.8 XJ=0.250000U LAMBDA=1.735839E-02 + NFS=2.136636E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=44.300000 CGDO=1.916356E-10 CGSO=1.916356E-10 CGBO=6.588428E-10 + CJ=3.847400E-04 MJ=0.460500 CJSW=4.573000E-10 MJSW=0.400100 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.01 um .MODEL CMOSP PMOS LEVEL=2 LD=0.191544U TOX=411.000000E-10 + NSUB=4.594401E+15 VTO=-0.770204 KP=2.033000E-05 GAMMA=0.4648 + PHI=0.6 UO=241.943 UEXP=0.139022 UCRIT=5000.12 + DELTA=1.27774 VMAX=32895.3 XJ=0.250000U LAMBDA=5.199281E-02 + NFS=1.000000E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=50.200000 CGDO=2.413974E-10 CGSO=2.413974E-10 CGBO=6.588428E-10 + CJ=1.921000E-04 MJ=0.496000 CJSW=1.857600E-10 MJSW=0.185000 PB=0.700000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.01 um N02R SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=orbit *RUN=n02r *WAFER=2 *Gate-oxide thickness= 411.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=03-30-90 * *NMOS PARAMETERS * -8.31325E-01, 6.05553E-02, 5.82723E-01 7.39661E-01, 0.00000E+00, 0.00000E+00 1.18192E+00,-1.09892E-02,-3.66942E-01 2.16756E-02, 5.43579E-02,-2.07537E-01 -6.35105E-03, 9.32620E-03, 1.35876E-02 5.60154E+02,5.25793E-001,-1.40601E-001 4.96027E-02, 3.03638E-02, 9.36075E-03 -4.68268E-04, 7.48476E-01,-3.64799E-01 1.47313E+01,-3.16333E+01, 4.34447E+01 -1.05130E-03,-1.92737E-03,-9.12720E-03 4.60719E-04, 2.91411E-04,-7.90039E-03 2.74709E-03,-1.36706E-02, 2.12828E-02 -5.41819E-03,-1.16894E-03, 5.32458E-02 5.59624E+02, 3.91608E+02,-1.10503E+02 8.20982E+00,-4.34249E+01, 1.05299E+02 -1.37764E+00, 7.72601E+01,-4.65063E+01 4.19506E-04, 9.02577E-02,-6.59195E-02 4.11000E-002, 2.70000E+01, 5.00000E+00 3.31321E-010,3.31321E-010,6.22415E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 410 Angstroms * * *PMOS PARAMETERS * -4.43236E-01, 2.20333E-01,-1.23198E-01 6.78644E-01, 0.00000E+00, 8.98098E-24 6.48896E-01,-3.20143E-01, 3.27500E-01 4.07850E-02,-3.35787E-02, 5.40627E-02 -1.07009E-02, 6.12254E-02, 1.09624E-02 2.40994E+02,2.76447E-001,-1.86332E-001 1.21192E-01, 5.00156E-02,-9.19463E-02 1.18781E-02, 3.31779E-01, 3.00374E-02 9.72678E+00,-4.01081E+00, 5.14925E+00 -2.02994E-03,-4.62004E-04,-2.45502E-03 6.21673E-04,-3.63708E-03,-3.57571E-03 5.69926E-03,-2.31499E-03, 2.79152E-03 1.14474E-03, 2.00219E-03, 1.02144E-02 2.47245E+02, 1.55336E+02, 5.93132E+00 9.34353E+00, 6.60431E-01, 1.37964E+01 -1.18538E+00, 1.40663E+01, 4.76293E+00 -1.59215E-02,-7.55412E-03, 2.13621E-02 4.11000E-002, 2.70000E+01, 5.00000E+00 1.74199E-010,1.74199E-010,6.11353E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 44.3, 3.847400e-04, 4.573000e-10, 0, 0.8 0.8, 0.4605, 0.4001, 0, 0 * *P+ diffusion:: * 50.2, 1.921000e-04, 1.857600e-10, 0, 0.7 0.7, 0.496, 0.185, 0, 0 * *METAL LAYER -- 1 * 5.200000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.400000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N03U.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N03U / UNIFICATION VENDOR: ORBIT TECHNOLOGY: SCPE FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Orbit Semiconductor 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 1.021 -.812 V Vth (Vds=.05V) 18/2 .938 -.788 V Idss (Vgds=5V) 18/2 2529.0 -1278.0 uA Vpt (Id=1.0uA) 18/2 16.23 -15.03 V Vth (Vds=.05V) 50/50 .920 -.800 V Vbkd (Ij=1.0uA) 50/50 16.3 -16.1 V Kp 50/50 23.5 11.13 uA/V^2 (Uo*Cox/2) Gamma 50/50 1.043 .456 V^0.5 (2.5v,5.0v) Delta Length .612 .345 um Delta Width .127 .214 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 17.5 -12.5 V Vth (Vbs=0,I=1uA) Metal1 17.5 -25.7 V Vth (Vbs=0,I=1uA) Metal2 17.4 -27.1 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P METAL METAL POLY PARAMETERS: POLY POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 20.4 20.7 22.6 77.4 .053 .026 20.1 Ohm/sq Width Variation -.333 -.324 .052 .024 -.434 .089 .036 um (Measured - Drawn) Contact Resist. 8.45 8.91 15.57 36.21 ---- .033 9.26 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 392. ---- ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL POLY PARAMETERS: POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Area Cap .068 .394 .209 .031 .020 ---- fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .040 .021 .462 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .034 .040 fF/um^2 (Layer to Metal1) Fringe Cap ---- .442 .217 ---- ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.18 V Vinv, K = 1.5 2.38 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 4.99 V Vinv, K = 2.0 2.54 V Gain, K = 2.0 -11.04 Ring Oscillator Frequency 30.49 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N03U SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.250000U TOX=405.000000E-10 + NSUB=2.057225E+16 VTO=0.92407 KP=4.971000E-05 GAMMA=0.9692 + PHI=0.6 UO=582.7 UEXP=0.221281 UCRIT=137749 + DELTA=2.73272 VMAX=83539.8 XJ=0.250000U LAMBDA=2.357637E-02 + NFS=2.400030E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=23.100000 CGDO=3.197355E-10 CGSO=3.197355E-10 CGBO=6.891152E-10 + CJ=3.871000E-04 MJ=0.462600 CJSW=4.267000E-10 MJSW=0.348000 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.12 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=405.000000E-10 + NSUB=4.864740E+15 VTO=-0.799152 KP=2.336000E-05 GAMMA=0.4713 + PHI=0.6 UO=273.8 UEXP=0.177959 UCRIT=7687.01 + DELTA=1.11147 VMAX=44954.5 XJ=0.250000U LAMBDA=5.204457E-02 + NFS=4.247374E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=77.200000 CGDO=3.197355E-10 CGSO=3.197355E-10 CGBO=7.204245E-10 + CJ=2.102400E-04 MJ=0.443400 CJSW=1.874500E-10 MJSW=0.205400 PB=0.700000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.25 um N03U SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=orbit *RUN=n03u *WAFER=2 *Gate-oxide thickness= 405.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=04-25-90 * *NMOS PARAMETERS * -7.99628E-01, 3.58389E-02,-7.70939E-02 7.60829E-01, 0.00000E+00, 0.00000E+00 1.09084E+00, 1.95692E-02, 5.03221E-01 3.14699E-03, 7.12321E-02, 6.27686E-02 -4.83964E-03, 1.11977E-02, 1.24884E-02 5.68326E+02,8.77101E-001,1.24542E-001 5.47895E-02, 4.55111E-02,-4.43980E-02 2.02084E-02, 5.38695E-01,-2.24314E-01 1.49246E+01,-2.58935E+01, 4.04786E+01 5.11543E-04,-7.81860E-03,-3.98345E-03 5.71135E-04,-1.75635E-03,-3.86746E-03 2.69152E-03,-1.19917E-02, 2.08939E-02 -2.20636E-03, 1.13252E-02, 1.38775E-02 5.72011E+02, 3.39156E+02,-2.31256E+00 5.29578E+00,-1.53472E+01, 8.57263E+01 -6.09940E-01, 6.45514E+01,-3.22786E+01 5.15024E-03, 5.74119E-02,-3.47952E-02 4.05000E-002, 2.70000E+01, 5.00000E+00 5.60881E-010,5.60881E-010,6.89101E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 405 Angstroms * * *PMOS PARAMETERS * -2.05514E-01,-1.12387E-01, 3.19501E-01 6.51256E-01, 0.00000E+00, 0.00000E+00 4.29960E-01, 6.07030E-02,-1.05273E-01 -1.22414E-02, 5.95048E-02,-5.18187E-02 -7.75855E-03, 6.00061E-02, 2.89938E-02 2.43186E+02,5.55117E-001,-2.68719E-002 1.31183E-01, 2.56252E-02,-6.55868E-02 1.94880E-02, 2.91910E-01,-1.02129E-01 9.97779E+00,-4.71751E+00, 7.63253E+00 6.46816E-04,-4.78671E-03, 8.28692E-04 7.29091E-04,-5.08643E-03, 7.79742E-05 6.03891E-03,-3.82796E-03, 7.33918E-03 -3.80988E-04, 3.58808E-03, 1.26380E-03 2.43886E+02, 1.58170E+02,-6.67849E+01 8.21881E+00, 1.75711E+00, 9.82284E+00 -1.45603E+00, 1.84551E+01,-1.09435E+01 -1.68526E-02, 3.95624E-03, 2.43354E-03 4.05000E-002, 2.70000E+01, 5.00000E+00 3.54981E-010,3.54981E-010,6.52295E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 23.1, 3.871000e-04, 4.267000e-10, 0, 0.8 0.8, 0.4626, 0.348, 0, 0 * *P+ diffusion:: * 77.2, 2.102400e-04, 1.874500e-10, 0, 0.7 0.7, 0.4434, 0.2054, 0, 0 * *METAL LAYER -- 1 * 5.400000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.700000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N04Y.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N04Y / YAZ VENDOR: ORBIT TECHNOLOGY: SCPE FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Orbit Semiconductor 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 .981 -.762 V Vth (Vds=.05V) 18/2 .902 -.741 V Idss (Vgds=5V) 18/2 2772.0 -1415.0 uA Vpt (Id=1.0uA) 18/2 16.36 -14.17 V Vth (Vds=.05V) 50/50 .893 -.754 V Vbkd (Ij=1.0uA) 50/50 16.5 -16.1 V Kp 50/50 24.7 12.14 uA/V^2 (Uo*Cox/2) Gamma 50/50 1.018 .432 V^0.5 (2.5v,5.0v) Delta Length .650 .413 um Delta Width .258 .227 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 17.4 -12.8 V Vth (Vbs=0,I=1uA) Metal1 17.5 -23.7 V Vth (Vbs=0,I=1uA) Metal2 17.6 -27.1 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P METAL METAL POLY PARAMETERS: POLY POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 20.9 21.2 22.0 69.0 .050 .026 19.2 Ohm/sq Width Variation -.348 -.342 .211 .146 -.555 -.330 -.422 um (Measured - Drawn) Contact Resist. 7.86 8.17 16.68 32.01 ---- .029 8.35 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 372. ---- ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL POLY PARAMETERS: POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Area Cap .067 .400 .203 .031 .029 ---- fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .041 .021 .450 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .036 .042 fF/um^2 (Layer to Metal1) Fringe Cap ---- .496 .255 ---- ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.16 V Vinv, K = 1.5 2.41 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 4.99 V Vinv, K = 2.0 2.57 V Gain, K = 2.0 -10.44 Ring Oscillator Frequency 32.57 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N04Y SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.250000U TOX=385.000000E-10 + NSUB=2.258745E+16 VTO=0.897565 KP=5.316000E-05 GAMMA=0.9654 + PHI=0.6 UO=592.7 UEXP=0.230197 UCRIT=130257 + DELTA=2.47473 VMAX=90040.1 XJ=0.250000U LAMBDA=1.879851E-02 + NFS=3.057290E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000 + RSH=21.800000 CGDO=3.363452E-10 CGSO=3.363452E-10 CGBO=7.416832E-10 + CJ=3.930000E-04 MJ=0.464500 CJSW=5.220400E-10 MJSW=0.355900 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.30 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=385.000000E-10 + NSUB=4.990865E+15 VTO=-0.701895 KP=2.599000E-05 GAMMA=0.4538 + PHI=0.6 UO=289.8 UEXP=0.264487 UCRIT=19552.7 + DELTA=0.599089 VMAX=40238.2 XJ=0.250000U LAMBDA=5.907164E-02 + NFS=6.263562E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000 + RSH=68.800000 CGDO=3.363452E-10 CGSO=3.363452E-10 CGBO=7.202245E-10 + CJ=1.959600E-04 MJ=0.446400 CJSW=2.043700E-10 MJSW=0.210400 PB=0.700000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is 0.21 um N04Y SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=orbit *RUN=n04y *WAFER=11 *Gate-oxide thickness= 385.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=05-23-90 * *NMOS PARAMETERS * -8.32234E-01, 2.62474E-02, 1.37962E-01 7.57294E-01, 0.00000E+00, 4.07953E-24 1.11832E+00, 1.47492E-02, 1.47980E-01 2.00957E-02, 6.61709E-02,-4.75901E-02 -3.78728E-03, 8.56975E-03, 5.50556E-03 5.55350E+02,8.21915E-001,1.23417E-001 5.67256E-02, 4.69086E-02,-7.09103E-02 1.66114E-02, 5.45882E-01,-2.24757E-01 1.37977E+01,-2.67973E+01, 4.06518E+01 1.18322E-04,-7.17775E-03, 2.07979E-03 4.57499E-04,-7.27854E-04,-3.18112E-03 2.22871E-03,-1.28334E-02, 2.24568E-02 -9.61740E-05, 8.41591E-03, 1.56231E-03 5.65782E+02, 3.35867E+02,-3.34589E+01 6.73192E+00,-2.09995E+01, 6.61344E+01 -1.07644E+00, 6.12571E+01,-1.86055E+01 5.67686E-03, 5.61626E-02,-3.02499E-02 3.85000E-002, 2.70000E+01, 5.00000E+00 5.52894E-010,5.52894E-010,6.97608E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 384 Angstroms * * *PMOS PARAMETERS * -4.04516E-01, 1.94000E-02, 5.43717E-01 6.24373E-01, 0.00000E+00,-8.26108E-24 5.51998E-01,-8.78320E-02,-4.39482E-01 3.79927E-02, 1.28532E-02,-1.55731E-01 -1.16822E-02, 6.93392E-02, 9.18622E-03 2.45675E+02,5.37616E-001,6.37422E-002 1.29296E-01, 3.64855E-02,-6.72852E-02 3.15141E-02, 2.75885E-01,-1.46026E-01 1.05125E+01,-5.26802E+00, 7.17295E+00 -8.22498E-04,-3.15958E-03, 3.69158E-03 1.02912E-03,-3.79060E-03,-1.52917E-03 7.12127E-03,-3.48383E-03, 3.86213E-03 1.47947E-03,-3.53595E-03, 3.88685E-03 2.58996E+02, 1.30483E+02,-5.85756E+01 1.08182E+01,-3.52393E+00, 6.64454E+00 -4.73399E-01, 1.34421E+01,-7.08386E+00 -1.79088E-02,-1.56510E-03, 9.98518E-03 3.85000E-002, 2.70000E+01, 5.00000E+00 3.61649E-010,3.61649E-010,6.82855E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 21.8, 3.930000e-04, 5.220400e-10, 0, 0.8 0.8, 0.4645, 0.3559, 0, 0 * *P+ diffusion:: * 68.8, 1.959600e-04, 2.043700e-10, 0, 0.7 0.7, 0.4464, 0.2104, 0, 0 * *METAL LAYER -- 1 * 4.900000e-02, 2.600000e-05, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.600000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 [N05E.PRM] MOSIS PARAMETRIC TEST RESULTS ----------------------------- RUN: N05E / ESTHER VENDOR: ORBIT TECHNOLOGY: SCPE FEATURE SIZE: 2.0um I. INTRODUCTION. This report contains the lot average results obtained by MOSIS from measurements of the MOSIS test structures on the selected wafers of this fabrication lot. The SPICE LEVEL 2 and BSIM parameters obtained from similiar measurements on these wafers are also attached. COMMENTS: This looks like a typical Orbit Semiconductor 2.0um run. II. TRANSISTOR PARAMETERS: W/L N-CHANNEL P-CHANNEL UNITS ------------------------------------------------------------------------------ Vth (Vds=.05V) 3/2 1.079 -.843 V Vth (Vds=.05V) 18/2 .989 -.821 V Idss (Vgds=5V) 18/2 2502.0 -1285.0 uA Vpt (Id=1.0uA) 18/2 16.12 -15.25 V Vth (Vds=.05V) 50/50 .970 -.838 V Vbkd (Ij=1.0uA) 50/50 16.2 -16.2 V Kp 50/50 23.1 11.07 uA/V^2 (Uo*Cox/2) Gamma 50/50 1.110 .457 V^0.5 (2.5v,5.0v) Delta Length .621 .344 um Delta Width .227 .093 um (Effective=Drawn-Delta) COMMENTS: These parameters seem normal. III. FIELD OXIDE TRANSISTOR SOURCE/DRAIN SOURCE/DRAIN PARAMETERS: GATE N + ACTIVE P + ACTIVE UNITS ----------------------------------------------------------------------------- Vth (Vbs=0,I=1uA) Poly 17.2 -13.1 V Vth (Vbs=0,I=1uA) Metal1 17.3 -23.3 V Vth (Vbs=0,I=1uA) Metal2 17.2 -25.7 V COMMENTS: These parameters seem normal. IV. PROCESS N P N P METAL METAL POLY PARAMETERS: POLY POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Sheet Resistance 21.7 22.6 22.1 74.5 .050 .025 19.3 Ohm/sq Width Variation -.278 -.257 .400 .296 -.191 .338 -.273 um (Measured - Drawn) Contact Resist. 9.02 10.46 17.42 33.85 ---- .030 8.68 Ohms (Metal1 to Layer) Gate Oxide Thickness: ---- ---- 399. ---- ---- ---- ---- Angst. COMMENTS: These parameters seem normal. V. CAPACITANCE N P METAL METAL POLY PARAMETERS: POLY DIFF DIFF 1 2 2 UNITS ------------------------------------------------------------------------------ Area Cap .068 .422 .209 .032 .021 ---- fF/um^2 (Layer to subs) Area Cap ---- ---- ---- .045 .022 .463 fF/um^2 (Layer to Poly) Area Cap ---- ---- ---- ---- .038 .045 fF/um^2 (Layer to Metal1) Fringe Cap ---- .520 .279 ---- ---- ---- fF/um (Layer to subs) COMMENTS: These parameters seem normal. VI. CIRCUIT PARAMETERS: ------------------------------------------------------------------------------ Vinv, K = 1 2.19 V Vinv, K = 1.5 2.39 V Vlow, K = 2.0 0.00 V Vhigh, K = 2.0 4.99 V Vinv, K = 2.0 2.53 V Gain, K = 2.0 -10.78 Ring Oscillator Frequency 31.51 MHz (31 stages @ 5.0V) COMMENTS: The ring oscillator frequency is typical. N05E SPICE LEVEL 2 PARAMETERS .MODEL CMOSN NMOS LEVEL=2 LD=0.218757U TOX=412.000000E-10 + NSUB=2.240587E+16 VTO=0.988057 KP=4.984000E-05 GAMMA=1.029 + PHI=0.6 UO=594.7 UEXP=0.243024 UCRIT=142404 + DELTA=3.23333 VMAX=81664.1 XJ=0.250000U LAMBDA=2.779413E-02 + NFS=2.635596E+12 NEFF=1 NSS=1.000000E+10 TPG=1.000000 + RSH=22.200000 CGDO=2.750240E-10 CGSO=2.750240E-10 CGBO=5.921737E-10 + CJ=4.125000E-04 MJ=0.473800 CJSW=5.311000E-10 MJSW=0.377600 PB=0.800000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.26 um .MODEL CMOSP PMOS LEVEL=2 LD=0.250000U TOX=412.000000E-10 + NSUB=5.042106E+15 VTO=-0.883034 KP=2.053000E-05 GAMMA=0.4881 + PHI=0.6 UO=244.945 UEXP=0.162903 UCRIT=7707.01 + DELTA=1.36921 VMAX=37257.1 XJ=0.250000U LAMBDA=5.622673E-02 + NFS=7.164748E+11 NEFF=1.001 NSS=1.000000E+10 TPG=-1.000000 + RSH=74.500000 CGDO=3.143031E-10 CGSO=3.143031E-10 CGBO=6.262755E-10 + CJ=2.205000E-04 MJ=0.442200 CJSW=2.594000E-10 MJSW=0.268500 PB=0.700000 * Weff = Wdrawn - Delta_W * The suggested Delta_W is -0.12 um N05E SPICE BSIM PARAMETERS NM1 PM1 DU1 DU2 ML1 ML2 * *PROCESS=orbit *RUN=n05e *WAFER=11 *Gate-oxide thickness= 412.0 angstroms *Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: * 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 *Bias range to perform the extraction (Vdd)=5 volts *DATE=06-22-90 * *NMOS PARAMETERS * -8.10747E-01, 1.43723E-02, 3.86842E-02 7.60841E-01, 0.00000E+00,-1.88687E-23 1.10838E+00, 8.29834E-02, 4.43931E-01 -6.01460E-03, 8.73214E-02, 4.01414E-02 -5.30635E-03, 1.03794E-02, 1.32459E-02 5.66398E+02,8.02317E-001,-2.62722E-001 5.12103E-02, 4.39206E-02,-2.39412E-02 -1.80067E-03, 5.86226E-01,-1.25492E-01 1.43066E+01,-2.96373E+01, 5.77484E+01 -3.08282E-04,-5.07086E-03,-7.30013E-03 2.57615E-04,-1.28067E-03,-2.80901E-03 1.90184E-03,-1.34887E-02, 3.38737E-02 -3.12657E-03, 7.19306E-03, 2.77314E-02 5.52136E+02, 3.52142E+02, 1.61677E+02 4.21291E+00,-2.65411E+01, 1.26348E+02 -1.82458E+00, 6.96110E+01,-2.18820E+01 2.83784E-03, 6.67848E-02,-2.25437E-02 4.12000E-002, 2.70000E+01, 5.00000E+00 5.04342E-010,5.04342E-010,5.92531E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * * Gate Oxide Thickness is 412 Angstroms * * *PMOS PARAMETERS * -4.67062E-02,-2.42658E-01, 2.18770E-01 6.53221E-01, 0.00000E+00,-4.68211E-24 3.28495E-01, 2.55371E-01,-1.43256E-01 -4.55177E-02, 1.11710E-01,-7.07840E-02 -3.86229E-03, 4.62126E-02, 1.30494E-02 2.27845E+02,5.88225E-001,-2.66152E-001 1.23220E-01, 3.06948E-02,-8.04019E-02 7.23161E-03, 2.65037E-01, 5.37089E-02 9.78627E+00,-5.27661E+00, 6.39495E+00 1.29008E-03,-6.41329E-03,-3.53751E-04 3.00274E-04,-3.27344E-03,-1.60923E-03 6.48694E-03,-3.84013E-03, 2.77905E-03 -2.12138E-03, 7.29997E-03, 1.59959E-02 2.17716E+02, 1.32708E+02, 6.82681E+01 6.36827E+00, 4.45088E+00, 1.47555E+01 -1.80963E+00, 1.36984E+01, 3.32685E+00 -1.87957E-02, 3.63753E-03, 1.19021E-02 4.12000E-002, 2.70000E+01, 5.00000E+00 3.69762E-010,3.69762E-010,5.91702E-010 1.00000E+000,0.00000E+000,0.00000E+000 1.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 0.00000E+000,0.00000E+000,0.00000E+000 * *N+ diffusion:: * 22.2, 4.125000e-04, 5.311000e-10, 0, 0.8 0.8, 0.4738, 0.3776, 0, 0 * *P+ diffusion:: * 74.5, 2.205000e-04, 2.594000e-10, 0, 0.7 0.7, 0.4422, 0.2685, 0, 0 * *METAL LAYER -- 1 * 5.050000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0 * *METAL LAYER -- 2 * 2.570000e-02, 0, 0, 0, 0 0, 0, 0, 0, 0