VENDOR_PRM

Measured parameters for each MOSIS run are made available online (e.g. file
M11X.PRM, where M11X is the run name) as the runs are distributed. Along with
electrical characteristics (thresholds, sheet resistances, capacitances, etc),
MOSIS generated SPICE model parameters are presented in this .PRM file. SPICE
LEVEL 2 parameters are developed for each 3.0 and 2.0um feature size run. SPICE
BSIM parameters are developed for each 2.0 or smaller feature size run. 

A hardcopy of this file is included with the packaged parts. In addition, the
following topic files contain the .PRM files for (up to) the 12 most recent
runs for a particular technology (e.g. SCN16) - vendor (e.g. HP) combination.
	
	Technology	 	Vendor 		Topic
	----------		------		-----
	CMOS 3.0um P-well	HP		SCP30_HP_PRM

	CMOS 2.0um N-well	VLSI		SCN20_VTI_PRM
				Technology

	CMOS 2.0um P-well	Orbit		SCPE20_ORBIT_PRM
	 double metal, poly

	
	CMOS 2.0um P-well	Orbit		SCNE20_ORBIT_PRM
	 double metal, poly


	CMOS 1.6u N-well	HP		SCN16_HP_PRM

	CMOS 1.2u N-well	HP		SCN12_HP_PRM

Information on how to use BSIM is available in the topic BSIM-GUIDE. The
topic BSIM-EXTRACT describes the BSIM extraction processes. To request any of
the above listed files, send a REQUEST message to MOSIS at MOSIS@MOSIS.EDU. 
An example message is shown below.

	REQUEST:	INFORMATION
	TOPIC:		SCN16_HP_PRM, BSIM-GUIDE
	REQUEST:	END

Note that when using BSIM parameters, the MOSIS convention for BSIM process
files is NM1 is for NMOS transistors, PM1 is for PMOS transistors, DU1 is for
N+ diffusion, and DU2 is for P+ diffusion. Therefore, when users of SPICE3 (or
derivatives) preprocess a process file into a model deck with 'Proc2Mod', they
should utilize NM1_DU1 for NMOS transistors, and PM1_DU2 for PMOS transistors.