SPICE Model Parameters for 
		  the MOSIS Junction Isolated NPN BJT

			   Updated 11/17/92


The following DC SPICE model parameters have been extracted from test
transistors fabricated on a recent MOSIS SCNA run (N25Y). These
parameters lack the AC information that is needed for fully defining
circuit behavior because we do not yet have the necessary test
equipment at MOSIS for measuring the AC parameters. It will be several
months before we are able to acquire equipment for full AC parameter
extraction. Capacitance measurements are based upon a preliminary set
of test structures that will be updated in the near future. The
accuracy of the capacitance measurements is not at a level that we
would normally like to have.  The SPICE parameters for the BJT's will
be updated at intervals, but we expect that it will be a few more
months before we are able to provide BJT parameters for every SCNA
fabrication run.

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      The following parameters are for an NPN transistor constructed
      from a basic building block unit designed to reduce RE, RB, and RC.
      The basic unit approximately consists of two minimum emitter regions
      flanked on both sides by base contact strings and then ringed by
      collector contacts, leaving a small access for the metal to the base
      and emitter. This diagram shows the general topology of the basic
      unit:

                                 E   B   C
				 ^   ^   ^
                                 |   |   |
			[C] [C]  |   |  [C] 
			[C]      |   |  [C] 
  Emitter Size: 2X1	[C] [B]	[E] [B] [C]
			[C] [B]	[E] [B] [C]
			[C]  |_______|  [C] 
			[C] [C] [C] [C] [C] 


Emitter size refers to the concatenation of this basic unit in the
X-direction to produce alternate emitter/base contacts and closing the
collector ring around the unit array.

                                         E   B   C
				         ^   ^   ^
                                         |   |   |
			[C] [C] [C] [C]  |   |  [C]
			[C]       _______|   |  [C] 
			[C]      |       |   |  [C] 
			[C] [B]	[E] [B] [E] [B] [C]
   Emitter Size: 2X2	[C] [B]	[E] [B] [E] [B] [C]
			[C]  |_______|_______|  [C] 
			[C] [C] [C] [C] [C] [C] [C] 





Typical parameters for different emitter-size npn transistors
============================================================= 

Note: The 1X1 transistor represents a minimum design rule device. It
      is included for reference, but it is not likely that it is suitable
      for more than the most rudimentary designs.


.MODEL BN1X1 NPN
+ BF=82 IS=7.943E-17 NF=9.9063E-01 NE=1.3893 VAF=71.4
+ IKF=1.025E-02 ISE=8.268E-17 RE=17.4 RC=752.42 RB=1.213E+03
+ RBM=13.08 ISC=1.643E-15 NC=1.0266
+ CJE=0.0976E-12 MJE=0.5050 VJE=0.85 CJC=0.0981E-12 MJC=0.4990 VJC=0.80
+ CJS=0.1800E-12 MJS=0.2033 VJS=0.70
* AREA OF TRANSISTOR
* AE=64 um^2  PE=32 um  AB=336 um^2 PB=80 um AC=1536 um^2 PC=160 um

.MODEL BN2X1 NPN
+ BF=82 IS=1.588E-16 NF=9.9563E-01 NE=1.3356 VAF=57.1
+ IKF=2.3067E-02 ISE=1.267E-16 RE=12.7 RC=420.00 RB=1.213E+03
+ RBM=7.53 ISC=3.363E-15 NC=1.0202
+ CJE=0.1952E-12 MJE=0.5050 VJE=0.85 CJC=0.18815E-12 MJC=0.4990 VJC=0.80
+ CJS=0.2326E-12 MJS=0.2033 VJS=0.70
* AREA OF TRANSISTOR
* AE=128 um^2  PE=64 um  AB=644 um^2 PB=102 um AC=2064 um^2 PC=182 um

.MODEL BN2X2 NPN
+ BF=82 IS=2.362E-16 NF=9.9942E-01 NE=1.3288 VAF=58.0
+ IKF=4.6580E-02 ISE=2.362E-16 RE=8.426 RC=209.00 RB=539.00
+ RBM=3.69 ISC=6.225E-15 NC=1.0237
+ CJE=0.3094E-12 MJE=0.5050 VJE=0.85 CJC=0.3360E-12 MJC=0.4990 VJC=0.80
+ CJS=0.3240E-12 MJS=0.2033 VJS=0.70
* AREA OF TRANSISTOR
* AE=256 um^2  PE=128 um  AB=1150 um^2 PB=146 um AC=3010 um^2 PC=226 um

.MODEL BN2X4 NPN
+ BF=82 IS=6.777E-15 NF=1.0030 NE=1.3199 VAF=59.4
+ IKF=6.690E-02 ISE=4.654E-16 RE=4.856 RC=150.00 RB=539.00
+ RBM=4.96 ISC=1.395E-14 NC=1.0382
+ CJE=0.7808E-12 MJE=0.5050 VJE=0.85 CJC=0.6317E-12 MJC=0.4990 VJC=0.80
+ CJS=0.5068E-12 MJS=0.2033 VJS=0.70
* AREA OF TRANSISTOR
* AE=512 um^2  PE=256 um  AB=2162 um^2 PB=234 um AC=4902 um^2 PC=314 um

.MODEL BN2X8 NPN
+ BF=82 IS=1.413E-15 NF=1.0048 NE=1.3086 VAF=61.9
+ IKF=7.799E-02 ISE=9.707E-16 RE=3.707 RC=121.00 RB=539.00
+ RBM=4.96 ISC=2.587E-14 NC=1.0410
+ CJE=1.5616E-12 MJE=0.5050 VJE=0.85 CJC=1.2230E-12 MJC=0.4990 VJC=0.80
+ CJS=0.8723E-12 MJS=0.2033 VJS=0.70
* AREA OF TRANSISTOR
* AE=1024 um^2  PE=512 um  AB=4186 um^2 PB=410 um AC=8686 um^2 PC=490 um


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If you have any questions please call Vance Tyree at (310) 822-1511.