BiCMOS Inverter
*
* input is node 1
* output is node 4
*
vdd 3 0 5
vin 1 0 pulse (0 5 0ns 2ns 2ns 20ns 40ns)
m1 0 1 2 0 CMOSN l=2u w=2u ad=4p as=4p
m2 2 1 3 3 CMOSP l=2u w=4u ad=8p as=8p
m3 0 2 5 0 CMOSN l=2u w=2u ad=4p as=4p
m4 5 1 4 0 CMOSN l=2u w=2u ad=4p as=4p
q1 4 2 3 0 BN2X2 ae=256p pe=128u ab=1150p pb=146u ac=3010p pc=226u
q2 0 5 4 0 BN2X2 ae=256p pe=128u ab=1150p pb=146u ac=3010p pc=226u
c1 4 0 10p
* 
* SPICE LEVEL 2 PARAMETERS for MOSIS 2um
*
.MODEL CMOSN NMOS LEVEL=2 LD=0.199653U TOX=412.000000E-10
+ NSUB=6.127500E+15 VTO=0.785304 KP=5.155000E-05 GAMMA=0.5029
+ PHI=0.6 UO=574.39 UEXP=0.14276 UCRIT=71339.6
+ DELTA=0.271895 VMAX=66094.8 XJ=0.250000U LAMBDA=2.872274E-02
+ NFS=4.630490E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000
+ RSH=22.900000 CGDO=2.510063E-10 CGSO=2.510063E-10 CGBO=5.344594E-10
+ CJ=1.291000E-04 MJ=0.724300 CJSW=7.226000E-10 MJSW=0.382600 PB=0.800000
* Weff = Wdrawn - Delta_W
* The suggested Delta_W is -0.50 um
.MODEL CMOSP PMOS LEVEL=2 LD=0.220676U TOX=412.000000E-10
+ NSUB=6.534000E+15 VTO=-0.758127 KP=1.932000E-05 GAMMA=0.5557
+ PHI=0.6 UO=230.5 UEXP=0.270375 UCRIT=40012.8
+ DELTA=1.000063E-06 VMAX=66313.1 XJ=0.050000U LAMBDA=5.295172E-02
+ NFS=8.859808E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000
+ RSH=107.600000 CGDO=2.774366E-10 CGSO=2.774366E-10 CGBO=5.873159E-10
+ CJ=2.871000E-04 MJ=0.634500 CJSW=3.369000E-10 MJSW=0.345900 PB=0.800000
* Weff = Wdrawn - Delta_W
* The suggested Delta_W is -0.28 um
*
.MODEL BN2X2 NPN
+ BF=82 IS=2.362E-16 NF=9.9942E-01 NE=1.3288 VAF=58.0
+ IKF=4.6580E-02 ISE=2.362E-16 RE=8.426 RC=209.00 RB=539.00
+ RBM=3.69 ISC=6.225E-15 NC=1.0237
+ CJE=0.3094E-12 MJE=0.5050 VJE=0.85 CJC=0.3360E-12 MJC=0.4990 VJC=0.80
+ CJS=0.3240E-12 MJS=0.2033 VJS=0.70
* AREA OF TRANSISTOR
* AE=256 um^2  PE=128 um  AB=1150 um^2 PB=146 um AC=3010 um^2 PC=226 um
*
* .ac dec 10 1 1k
* .dc vin 0.0 5.0 0.05
* .ic v(1)=0.0 v(2)=5.0
.tran 2ns 40ns
.end