NM1 PM1 DU1 DU2 ML1 ML2
*
*PROCESS=vti
*RUN=m9ac
*WAFER=4
*Gate-oxide thickness= 412.0 angstroms 
*Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: 
* 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 
*Bias range to perform the extraction (Vdd)=5 volts 
*DATE=11-22-89
*
* NMOS PARAMETERS
*
-7.5290E-001,-1.4067E-001,9.27740E-002
7.46750E-001,0.00000E+000,0.00000E+000
9.88823E-001,1.62800E-001,2.03936E-001
1.08476E-001,1.73563E-001,-1.2216E-001
-8.6779E-003,2.05081E-002,1.39611E-002
5.87442E+002,4.21610E-001,-5.66770E-001
5.10082E-002,5.54135E-002,-2.9857E-002
6.19386E-002,8.71826E-001,-5.5545E-001
7.71556E+000,-1.1821E+001,5.40946E+001
-5.6805E-004,-1.2993E-002,-2.4351E-003
8.50187E-004,-1.4466E-003,-1.0628E-002
1.01386E-003,-3.0728E-003,1.92974E-002
-2.0091E-002,3.57457E-002,7.32890E-002
6.63283E+002,5.11339E+002,-5.6514E+001
-1.2627E+001,3.43381E+001,1.33296E+002
3.82740E+000,8.82534E+001,-4.5705E+001
1.08573E-002,8.63640E-002,-7.0326E-002
4.13000E-002,2.70000E+001,5.00000E+000
2.64385E-010,2.64385E-010,5.18763E-010
1.00000E+000,0.00000E+000,0.00000E+000
1.00000E+000,0.00000E+000,0.00000E+000
0.00000E+000,0.00000E+000,0.00000E+000
0.00000E+000,0.00000E+000,0.00000E+000
*
* Gate Oxide Thickness is 412 Angstroms
*
*
* PMOS PARAMETERS
*
-4.7458E-001,3.23537E-002,1.03314E-001
6.83300E-001,0.00000E+000,0.00000E+000
6.38503E-001,-4.6370E-002,-5.1993E-002
1.89273E-002,5.25611E-002,-5.0009E-002
-1.1975E-002,4.17880E-002,-4.4076E-003
2.22335E+002,4.78341E-001,-2.96230E-001
1.14924E-001,6.28610E-002,-1.0126E-001
1.98580E-002,2.47421E-001,-5.0555E-003
9.22734E+000,-4.8288E+000,6.66500E+000
-1.5255E-003,-2.4394E-003,-1.5679E-003
7.50836E-004,-2.5847E-003,3.64504E-003
4.87183E-003,-1.5847E-003,2.02175E-005
2.00802E-003,3.83148E-003,9.92587E-003
2.40287E+002,1.00620E+002,1.13386E+002
8.05444E+000,1.92705E+000,1.50036E+001
-5.4106E-001,1.18733E+001,-3.6684E+000
-1.6820E-002,3.31330E-004,9.48023E-003
4.13000E-002,2.70000E+001,5.00000E+000
2.99960E-010,2.99960E-010,5.84095E-010
1.00000E+000,0.00000E+000,0.00000E+000
1.00000E+000,0.00000E+000,0.00000E+000
0.00000E+000,0.00000E+000,0.00000E+000
0.00000E+000,0.00000E+000,0.00000E+000
*
* N+ diffusion:: 
*
25.46,    1.291000e-04,    7.226000e-10,    0,    0.8
0.8,    0.7243,    0.3826,    0,    0
*
* P+ diffusion:: 
*
107.6,    2.870000e-04,    3.370000e-10,    1.000000e-08,    0.8
0.8,    0.6345,    0.3459,    0,    0
*
* METAL LAYER -- 1
*
0.1091,    0,    0,    0,    0
0,    0,    0,    0,    0
*
* METAL LAYER -- 2
*
4.600000e-02,    0,    0,    0,    0
0,    0,    0,    0,    0