* Transmission Gate
* Node 0 corresponds to vss
* Node 1 corresponds to vdd
* Node 2 corresponds to in
* Node 3 corresponds to out
* Node 4 corresponds to s
* Node 5 corresponds to sb

C1 3 0 .00001pf
M1 2 5 3 1 p l=2.0u w=6.0u
M2 2 4 3 0 n l=2.0u w=4.0u

* 
* SPICE LEVEL 2 PARAMETERS for MOSIS 2um (VTI process)
*
.MODEL n NMOS LEVEL=2 LD=0.199653U TOX=412.000000E-10
+ NSUB=6.127500E+15 VTO=0.785304 KP=5.155000E-05 GAMMA=0.5029
+ PHI=0.6 UO=574.39 UEXP=0.14276 UCRIT=71339.6
+ DELTA=0.271895 VMAX=66094.8 XJ=0.250000U LAMBDA=2.872274E-02
+ NFS=4.630490E+12 NEFF=1 NSS=1.000000E+12 TPG=1.000000
+ RSH=22.900000 CGDO=2.510063E-10 CGSO=2.510063E-10 CGBO=5.344594E-10
+ CJ=1.291000E-04 MJ=0.724300 CJSW=7.226000E-10 MJSW=0.382600 PB=0.800000
* Weff = Wdrawn - Delta_W
* The suggested Delta_W is -0.50 um
.MODEL p PMOS LEVEL=2 LD=0.220676U TOX=412.000000E-10
+ NSUB=6.534000E+15 VTO=-0.758127 KP=1.932000E-05 GAMMA=0.5557
+ PHI=0.6 UO=230.5 UEXP=0.270375 UCRIT=40012.8
+ DELTA=1.000063E-06 VMAX=66313.1 XJ=0.050000U LAMBDA=5.295172E-02
+ NFS=8.859808E+11 NEFF=1.001 NSS=1.000000E+12 TPG=-1.000000
+ RSH=107.600000 CGDO=2.774366E-10 CGSO=2.774366E-10 CGBO=5.873159E-10
+ CJ=2.871000E-04 MJ=0.634500 CJSW=3.369000E-10 MJSW=0.345900 PB=0.800000
* Weff = Wdrawn - Delta_W
* The suggested Delta_W is -0.28 um
*

* Initial conditions:
.ic v(3)=0.000000
.ic v(4)=5.000000
.ic v(5)=0.000000

vdd 1 0 5.0
vin 2 0 pulse(0 5 1ns 0ns 0ns 5ns 10ns)
vs 4 0 pulse(5 0 1ns 0ns 0ns 10ns 20ns)
vsb 5 0 pulse(0 5 1ns 0ns 0ns 10ns 20ns)
.tran 0.01ns 40ns
.plot tran V(3) (0,5)
.end