EECS 312 Course Outline

 

 

 

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Click on the title of a section to find the relevant material for that section!  This material includes:

 

                 Reading:       The specific pages from each section that you are required to read.

 

              Examples:       A list of examples in your book (for each section) that I feel are particularly important and relevant.  Make sure you read and understand each of them!

 

              Exercises:       These are not homework problems !  These are instead a list of the exercises provided throughout each section of your book that I feel are particularly important and relevant.  The solutions for these exercises are on reserve in the library.  You may treat these examples as additional problems to be solved, or simply treat them as additional examples and review the solutions.  Working these exercises is not required, so you can ignore all or part of them (not recommended!).

 

Additional Problems:   These are problems in the supplemental material “KC’s Problems and Solutions”  that I feel are particularly important and relevant.  As with “Exercises” described above, these problems are optional, and can be treated either as additional practice problems or as additional examples.

 

              Handouts:       Fascinating supplemental material written by your enlightened professor.  Click on the image to see and print the pdf  file.  Reading this material is a requirement of this class!!

 

 

Chapter 3 – Diodes

 

Introduction – Analysis of Electronic Circuits

 

Section 3.1 – The Ideal Diode

 

Section 3.2 – Terminal Characteristics of Junction Diodes

 

Section 3.3 -  Modeling the Diode Forward Characteristics

 

Section 3.4 – Operation in the Reverse Breakdown Region – Zener Diodes

 

Section 3.5 – Rectifier Circuits

 

Section 3.6 – Limiting and Clamping Circuits

 

Section 3.7 – Physical Operation of Diodes

 

Section 3.8 – Special Diode Types

 

 

Chapter 4 – MOS Field-Effect Transistors (MOSFETs)

 

Section 4.1 – Device Structure and Physical Operation

 

Section 4.2 – Current-Voltage Characteristics

 

Section 4.3 - MOSFET Circuits at DC

 

Section 4.4 – The MOSFET as an Amplifier and as a Switch

 

Section 4.6 – Small-Signal Operation and Models

 

Section 1.7 – Digital Logic Inverters

 

Section 4.10 – The CMOS Digital Logic Inverter

 

Section 4.11 – The Depletion Type MOSFET

 

 

Chapter 10 – Digital CMOS Logic Circuits

 

Section 10.3 – CMOS Logic-Gate Circuits

 

Section 10.4 – Pseudo NMOS Logic-Gate Circuits

 

 

Chapter 11 – Memory and Advanced Digital Circuits

 

Section 11.1 – Latches and Flip-Flops

 

Section 11.3 – Semiconductor Memories: Types and Architectures

 

Section 11.4 – Random-Access Memory Cells

 

Section 11.5 – Sense Amplifier and Address Decoders

 

Section 11.6 – Read-Only Memory

 

 

 Chapter 5 – Bipolar Junction Transistors (BJTs)

 

Section 5.1 – Device Structure and Physical Operation

 

Section 5.2 – Current-Voltage Characteristics

 

Section 5.3The BJT as an Amplifier and as a Switch

 

Section 5.4 - BJT Circuits at DC

 

 

          Section 10.1 – Digital Circuit Design: An Overview